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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN003-30P,127

Name: PSMN003-30P,127
Brand: Nexperia USA Inc.
SKU: PSMN003-30P,127
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN003-30P,127

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: PSMN003-30P,127.pdf

Description:: MOSFET N-CH 30V 75A TO220AB

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Product details

Overview

PSMN003-30P from NXP Semiconductors is a 30 V, 75 A N-channel TrenchMOS intermediate-level power MOSFET in TO-220AB (SOT78) package, optimized for high-frequency DC-to-DC conversion and OR-ing circuits. It delivers 2.4 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, supports 400 A pulsed drain current, and features 0.65 K/W junction-to-mounting-base thermal resistance for efficient heatsink-coupled operation in computing and industrial power stages.

For engineers reviewing the PSMN003-30P datasheet, PSMN003-30P pinout, PSMN003-30P application, or PSMN003-30P equivalent, key selection criteria include its low R_DS(on) at 5 V gate drive, fast switching with 45 nC Q_GD, avalanche ruggedness (500 mJ), and mounting-base thermal interface - critical for high-density motherboard VRMs and redundant power path designs.

Technical Context

This N-channel enhancement-mode FET uses NXP's TrenchMOS technology to achieve low conduction losses and fast switching. Its gate threshold voltage (V_GS(th)) ranges from 0.4 V at 175 °C to 3.4 V at −55 °C, enabling stable turn-on across wide temperature ranges while maintaining <1 µA I_DSS leakage at 25 °C.

The device integrates a robust intrinsic body diode with 0.85 V forward voltage at 25 A and exhibits unclamped avalanche capability up to 75 A/500 mJ. Its dynamic parameters - including 170 nC total gate charge, 9200 pF C_iss, and 115 ns fall time - are characterized at V_DS = 15 V, I_D = 75 A, and T_j = 25 °C for real-world synchronous rectifier and hot-swap design validation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V maximum drain-source voltage - defines safe blocking capability in 24 V input DC-DC stages.
R_DS(on) @ 10 V	2.4–2.8 mΩ at 25 °C - enables <1 W conduction loss at 50 A, reducing thermal load in high-current VRMs.
I_D continuous	75 A at T_mb = 25 °C - supports high-current CPU/GPU power delivery when mounted on heatsink.
Q_GD	45 nC - determines Miller plateau duration and switching loss sensitivity in hard-switched topologies.
R_th(j-mb)	0.65 K/W - quantifies thermal path efficiency from die to heatsink, enabling accurate junction temperature estimation.
E_AS	500 mJ non-repetitive avalanche energy - provides margin against inductive switching transients in OR-ing and hot-swap applications.
V_GS(th)	1–3 V typical at 25 °C - ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers.

Pinout & Package

TO-220AB (SOT78) plastic single-ended package with heatsink-mounted base; 3-lead configuration; mounting base electrically connected to drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control electrode; requires ≤20 V gate-source voltage; 100 nA max leakage at 25 °C.
2 (D) / Mounting Base	Drain	Main high-side current path; electrically tied to heatsink - mandates isolation if heatsink is grounded.
3 (S)	Source	Power return node; referenced for gate drive; forms source-drain diode anode for reverse current blocking.

Key Features

Feature	Design Value
Low R_DS(on) at 5 V drive	3.3–4 mΩ enables direct interfacing with 5 V microcontrollers or PWM controllers without level-shifting.
TrenchMOS architecture	Reduces gate charge and output capacitance versus planar MOSFETs - improves efficiency in >300 kHz switching converters.
Avalanche-rated	500 mJ E_AS allows safe operation under unclamped inductive turn-off, eliminating need for external snubbers in many OR-ing designs.
High peak current capability	400 A pulsed drain current supports surge handling during cold-start or fault conditions in server power supplies.
Thermally optimized package	0.65 K/W R_th(j-mb) enables >150 W continuous dissipation with modest heatsinking - critical for space-constrained motherboard layouts.

Applications

Server VRM Phase Legs

OR-ing Diode Replacement

Use Scenario: High-current, multi-phase buck converter supplying CPU/GPU core voltage on enterprise server motherboards.

IC Role / Device Role / Timing Role: Synchronous rectifier switch in low-side position, operating at 300–600 kHz with 10 V gate drive.

Use Value: 2.4 mΩ R_DS(on) cuts conduction loss by >40% vs. comparable 3.5 mΩ MOSFETs, directly improving VRM efficiency and reducing heatsink size.

Use Scenario: Redundant 12 V power supply backplane where two supplies feed a common bus with automatic failover.

IC Role / Device Role / Timing Role: Active OR-ing switch controlling forward conduction and reverse blocking between supplies and load.

Use Value: 0.85 V V_SD body diode forward drop and fast 115 ns fall time minimize voltage drop and reverse recovery loss versus Schottky diodes.

Industrial DC-DC Converters

Hot-Swap Controller Interface

Use Scenario: 24 V input to 5/3.3 V isolated/non-isolated converters in programmable logic controllers and motor drives.

IC Role / Device Role / Timing Role: Primary switching element in high-side or low-side configuration, driven by dedicated gate driver ICs.

Use Value: 30 V V_DS rating and 175 °C max junction temperature support operation in harsh ambient environments with minimal derating.

Use Scenario: Inrush current limiting and fault isolation in modular telecom shelf power systems with IEEE 802.3af/at compliance requirements.

IC Role / Device Role / Timing Role: Load switch controlled by hot-swap controller (e.g., LTC4215) to manage board insertion into live backplane.

Use Value: 75 A continuous current and 400 A pulsed rating handle startup surges; avalanche ruggedness prevents failure during short-circuit events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PBF	40 V V_DS, 200 A I_D, 4 mΩ R_DS(on) @ 10 V, TO-220 package - higher voltage rating but larger die and higher Q_G.	Preferred in 36 V industrial systems; less optimal for 24 V high-frequency VRMs due to slower 200 ns t_f and 120 nC Q_G.	Select when higher V_DS margin or higher pulse current is required; avoid if minimizing switching loss at >300 kHz is critical.
STP75NF75	75 V V_DS, 75 A I_D, 12.5 mΩ R_DS(on) @ 10 V, TO-220 - significantly higher on-resistance and lower frequency suitability.	Suitable for lower-speed 48 V telecom rectifiers; not recommended for high-efficiency 24 V VRMs due to 3× higher conduction loss.	Choose only for cost-sensitive, low-frequency applications where thermal headroom exists; not a functional substitute in high-density designs.

Compared with IRF1404PBF and STP75NF75, PSMN003-30P offers the lowest R_DS(on) and Q_GD in the 30 V class, delivering superior efficiency in high-frequency, thermally constrained computing power stages - making it the preferred choice where 30 V blocking suffices and switching speed matters.

Availability

PSMN003-30P is available at Aetrix Electronics and suitable for server motherboard VRMs, industrial DC-DC converters, and telecom OR-ing circuits requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for PSMN003-30P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer markets.

PSMN003-30P belongs to NXP's TrenchMOS intermediate-level power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing and communications infrastructure where low R_DS(on), fast switching, and thermal reliability are essential.

FAQ

Is PSMN003-30P suitable for logic-level gate drive?

Yes - its gate threshold voltage (V_GS(th)) is 1–3 V at 25 °C, and it achieves 3.3 mΩ R_DS(on) at V_GS = 5 V, enabling direct drive from 5 V microcontrollers or PWM controllers without external level shifters. However, full 2.4 mΩ performance requires 10 V gate drive.

What is the maximum allowable mounting base temperature for continuous 75 A operation?

Per Figure 1 in the datasheet, the normalized continuous drain current drops to 100% only up to T_mb = 25 °C. At T_mb = 100 °C, derated current is ~45 A. For sustained 75 A, the mounting base must be maintained near 25 °C via active heatsinking or forced airflow - consistent with its 230 W P_tot rating at T_mb = 25 °C.

Does the mounting base require electrical isolation from the heatsink?

Yes - Pin 2 (Drain) and the mounting base are internally connected. If the heatsink is grounded or at a different potential than the drain node, electrically insulating hardware (e.g., mica washer + nylon screw) must be used to prevent short circuits. This is mandatory in low-side switch configurations where source is grounded.

Can PSMN003-30P replace a Schottky diode in OR-ing applications?

Yes - its 0.85 V source-drain forward voltage at 25 A and fast 115 ns fall time provide lower conduction loss and negligible reverse recovery compared to 0.45 V Schottky diodes rated for similar current. The MOSFET requires gate control (e.g., ideal diode controller), but eliminates thermal runaway risk and enables bidirectional current sensing.

PSMN003-30P,127 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 2.8mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 170 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 230W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

PSMN003-30P,127 FAQ

1.How can I place an order for PSMN003-30P,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN003-30P,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN003-30P,127 reliable?

The price and inventory of PSMN003-30P,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN003-30P,127 is usually 5 days.

3.What payment methods are accepted for PSMN003-30P,127?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN003-30P,127 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN003-30P,127?

PSMN003-30P,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN003-30P,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN003-30P,127?

For technical support, including PSMN003-30P,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN003-30P,127 requirements.

6.How does Aetrix verify that PSMN003-30P,127 is sourced from the original manufacturer or authorized distributors?

All PSMN003-30P,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN003-30P,127 meets industry standards.

7.What is the process for return or replacement of PSMN003-30P,127?

All PSMN003-30P,127 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN003-30P,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN003-30P,127 part is unused and in its original packaging.

Return procedure for PSMN003-30P,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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