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NXP Semiconductors PSMN004-36B,118
- Part No.:
- PSMN004-36B,118
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
PSMN004-36B,118.pdf
- Description:
- MOSFET N-CH 36V 75A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,871
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Product details
Overview
PSMN004-36B,118 from NXP Semiconductors (formerly Philips) is an N-channel logic-level TrenchMOS™ power MOSFET in SOT404 (D2-PAK) package, rated for 36 V VDS, 75 A ID (DC), and 4 mΩ RDS(on) at VGS = 5 V and Tj = 25 °C. It serves as a high-current, low-loss switching element in primary-side power conversion stages of DC-DC converters and switch-mode power supplies.
For engineers reviewing the PSMN004-36B,118 datasheet, PSMN004-36B,118 pinout, PSMN004-36B,118 application, or PSMN004-36B,118 equivalent, key selection criteria include its logic-level gate drive compatibility (VGS(th) = 1.5 V typ), avalanche ruggedness (EAS = 120 mJ), thermal resistance (Rth(j-mb) = 0.65 K/W), and fast switching performance (Qg(tot) = 97 nC).
Technical Context
This device employs TrenchMOS™ technology to achieve ultra-low on-state resistance and high current density in a surface-mount D2-PAK package. Its gate threshold voltage (1.0–2.0 V) enables direct interfacing with 3.3 V and 5 V logic controllers without level-shifting circuitry.
The PSMN004-36B,118 features integrated source-drain diode with VSD = 0.85 V at IS = 25 A and trr = 400 ns, supporting synchronous rectification and freewheeling in hard-switched topologies. Its unclamped inductive avalanche rating (IAS = 75 A, EAS = 120 mJ) ensures robustness under transient overcurrent conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 36 V - Maximum blocking voltage compatible with 24 V nominal bus systems and 36 V automotive/industrial rails. |
| ID (DC) | 75 A at Tmb = 25 °C - Supports high-power output stages without forced air cooling when mounted on adequate heatsink. |
| RDS(on) | 4 mΩ max at VGS = 5 V, ID = 25 A, Tj = 25 °C - Enables <1 W conduction loss at 50 A, critical for efficiency in high-current SMPS. |
| Qg(tot) | 97 nC - Total gate charge determines driver strength requirement; enables efficient 100–500 kHz switching with standard gate drivers. |
| Rth(j-mb) | 0.65 K/W - Low junction-to-mounting-base thermal resistance allows >200 W power dissipation with modest heatsinking. |
| EAS | 120 mJ - Non-repetitive avalanche energy rating supports reliable operation during inductive turn-off transients without snubbers. |
| VGS(th) | 1.5 V typ - Logic-level threshold enables direct drive from microcontrollers and PWM ICs operating at 3.3 V or 5 V. |
Pinout & Package
SOT404 (D2-PAK) plastic surface-mount package with isolated mounting base; pin 2 (drain) is internally connected to the exposed drain pad and not accessible via external lead.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control terminal requiring ~97 nC total charge; sensitive to ESD; must be driven with low-impedance path to minimize switching losses. |
| 2 | Drain (D) | Internally bonded to large copper drain pad; electrically and thermally connected to mounting base; no external lead connection possible. |
| 3 | Source (S) | Power return path and reference for gate drive; carries full load current; layout must minimize inductance to suppress ringing. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchMOS™ technology | Enables 4 mΩ RDS(on) in D2-PAK, reducing conduction loss by >30% vs. planar MOSFETs of same footprint. |
| Logic-level gate drive | VGS(th) = 1.5 V typ allows direct interface with 3.3 V/5 V controllers, eliminating level-shifters and associated BOM cost. |
| Avalanche-rated | 120 mJ EAS permits safe operation under unclamped inductive switching, reducing need for external clamping components. |
| Low Qgd/Qgs ratio | 39 nC / 20 nC = 1.95 - Reduces Miller effect, improving dv/dt immunity and enabling stable high-frequency switching. |
| Integrated body diode | VSD = 0.85 V @ 25 A supports freewheeling in buck/boost converters; trr = 400 ns limits reverse recovery loss. |
Applications
| High-Efficiency DC-DC Converters | Industrial Switch-Mode Power Supplies |
|---|---|
|
Use Scenario: Primary-side synchronous rectifier in 12 V–24 V input, 3.3 V/5 V/12 V output isolated DC-DC modules for telecom and server applications. IC Role / Device Role / Timing Role: High-side or low-side power switch handling up to 75 A continuous current with minimal conduction loss. Use Value: 4 mΩ RDS(on) reduces I²R loss to <1.5 W at 60 A, directly improving full-load efficiency by 1.2–1.8% versus comparable 6 mΩ devices. |
Use Scenario: Main switching transistor in 500 W–1 kW industrial AC-DC front-end or DC-DC stage operating at 100–250 kHz. IC Role / Device Role / Timing Role: Fast-switching, avalanche-rugged power FET controlling energy transfer in hard-switched flyback or forward converters. Use Value: 97 nC Qg(tot) and 0.65 K/W Rth(j-mb) enable thermally sustainable operation at 200 kHz with <100 °C junction rise under full load. |
| Automotive 24 V Power Distribution | Motor Drive Half-Bridge Stages |
|
Use Scenario: Load switch or protection FET in 24 V battery-powered systems (e.g., ADAS ECUs, infotainment power rails) requiring hot-swap capability. IC Role / Device Role / Timing Role: Logic-level controlled high-current switch with integrated avalanche tolerance for load dump and inductive kickback suppression. Use Value: ±15 V VGS rating and 120 mJ EAS withstand ISO 7637-2 pulse 5a (load dump) without external TVS, simplifying protection design. |
Use Scenario: Low-side switch in 24 V BLDC motor control half-bridge driving fans, pumps, or actuators up to 500 W. IC Role / Device Role / Timing Role: Fast-turning, low-RDS(on) power switch handling peak currents >200 A in PWM-driven commutation cycles. Use Value: 240 A IDM peak rating and 400 ns trr support clean commutation at 20 kHz PWM, minimizing shoot-through risk and diode recovery loss. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP75NF36 | TO-220 package (SOT78), higher RDS(on) = 5.5 mΩ @ 5 V, 75 A rating, same VDS = 36 V. | Requires through-hole PCB assembly and larger heatsink due to higher thermal resistance (Rth(j-mb) ≈ 1.0 K/W). | Select when legacy TO-220 layout reuse is required and surface-mount constraints do not apply. |
| IRF1404ZPBF | D2-PAK package, 40 V VDS, RDS(on) = 4.8 mΩ @ 10 V (not logic-level), VGS(th) = 2.0–4.0 V. | Requires 10 V gate drive for optimal RDS(on); less suitable for 3.3 V controller interfaces without gate driver boost. | Select when higher VDS margin is needed and system uses 10 V gate drive infrastructure. |
Compared with STP75NF36 and IRF1404ZPBF, the PSMN004-36B,118 delivers superior logic-level drivability, lower thermal resistance, and tighter VGS(th) distribution-making it optimal for space-constrained, high-efficiency, low-voltage-control designs where board area and thermal management are critical.
Availability
PSMN004-36B,118 is available at Aetrix Electronics and suitable for DC-DC converters, industrial switch-mode power supplies, and automotive 24 V power distribution systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for PSMN004-36B,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and IoT applications, with roots in Philips' semiconductor division.
The PSMN004-36B,118 belongs to NXP's TrenchMOS™ logic-level power MOSFET product line, engineered for high-current, high-efficiency switching in space-constrained power conversion systems where low gate drive voltage and thermal performance are essential.
FAQ
What is the maximum continuous drain current for PSMN004-36B,118 at 100 °C mounting base temperature?
The PSMN004-36B,118 supports 75 A continuous drain current (ID) at Tmb = 100 °C with VGS = 5 V, as specified in Table 3 of the datasheet. This rating reflects derating from the 25 °C value and confirms stable operation in thermally demanding environments such as enclosed industrial power supplies.
Does PSMN004-36B,118 have avalanche capability, and how is it quantified?
Yes, the PSMN004-36B,118 is fully rated for non-repetitive avalanche operation with EAS = 120 mJ and IAS = 75 A under defined test conditions (unclamped inductive load, VDD = 15 V, starting Tj = 25 °C). This specification is verified per JEDEC standards and enables robustness in real-world inductive switching events without external clamping.
What is the gate-source threshold voltage range for PSMN004-36B,118, and why does it matter for logic-level operation?
The PSMN004-36B,118 has a VGS(th) range of 1.0–2.0 V (min–max) at Tj = 25 °C, with typical value 1.5 V. This low, tightly distributed threshold ensures reliable turn-on with 3.3 V or 5 V logic outputs-eliminating the need for gate driver boost stages and reducing system complexity and cost in microcontroller-based power designs.
How does the SOT404 (D2-PAK) package of PSMN004-36B,118 differ from the SOT78 (TO-220AB) variant PSMN004-36P?
The PSMN004-36B,118 uses SOT404 (D2-PAK), a surface-mount package with isolated mounting base and no external pin 2 connection, while PSMN004-36P uses through-hole SOT78 (TO-220AB) with three accessible leads. The SOT404 offers lower Rth(j-mb) (0.65 K/W vs. ~1.0 K/W) and better suitability for automated assembly, but requires careful thermal pad soldering and PCB copper area design.
Can PSMN004-36B,118 be used in synchronous rectification applications, and what diode parameters support this?
Yes, the PSMN004-36B,118 integrates a source-drain diode with VSD = 0.85 V at IS = 25 A and trr = 400 ns, making it suitable for synchronous rectification in buck, boost, and LLC converters. Its low forward voltage and controlled reverse recovery minimize conduction and switching losses compared to discrete Schottky solutions in medium-frequency (<300 kHz) topologies.
PSMN004-36B,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 36 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 97 nC @ 5 V
- Vgs (Max):
- ±15V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6000 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 230W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
PSMN004-36B,118 FAQ
1.How can I place an order for PSMN004-36B,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for PSMN004-36B,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PSMN004-36B,118 reliable?
The price and inventory of PSMN004-36B,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN004-36B,118 is usually 5 days.
3.What payment methods are accepted for PSMN004-36B,118?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN004-36B,118 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PSMN004-36B,118?
PSMN004-36B,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PSMN004-36B,118 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PSMN004-36B,118?
For technical support, including PSMN004-36B,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN004-36B,118 requirements.
6.How does Aetrix verify that PSMN004-36B,118 is sourced from the original manufacturer or authorized distributors?
All PSMN004-36B,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN004-36B,118 meets industry standards.
7.What is the process for return or replacement of PSMN004-36B,118?
All PSMN004-36B,118 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN004-36B,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PSMN004-36B,118 part is unused and in its original packaging.
Return procedure for PSMN004-36B,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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