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NXP Semiconductors PSMN004-55W,127
- Part No.:
- PSMN004-55W,127
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
PSMN004-55W,127.pdf
- Description:
- MOSFET N-CH 55V 100A TO247-3
- Quantity:
- Payment:
- Shipping:
Inventory:3,198
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Product details
Overview
PSMN004-55W from Philips Semiconductors is an N-channel logic-level TrenchMOS transistor in TO-247 (SOT429) package, rated for 55 V VDSS, 100 A continuous drain current at Tmb = 25 °C, and RDS(ON) ≤ 4.2 mΩ at VGS = 10 V. It serves as a high-current power switch in d.c.-to-d.c. converters and switched-mode power supplies.
For engineers reviewing the PSMN004-55W datasheet, PSMN004-55W pinout, PSMN004-55W application, or PSMN004-55W equivalent, key selection criteria include its low RDS(ON) at logic-level gate drive (≤4.5 mΩ @ 5 V), 300 W power dissipation capability, and thermal resistance of 0.5 K/W junction-to-mounting-base - critical for high-efficiency, thermally constrained power stages.
Technical Context
This device uses Philips' proprietary TrenchMOS technology to minimize on-state resistance while maintaining fast switching performance. Its gate threshold voltage (VGS(TO)) ranges from 1.0 V to 2.0 V at 25 °C, enabling reliable turn-on with standard 5 V logic drivers.
The PSMN004-55W integrates a robust body diode with 100 A continuous source current rating and 150 ns reverse recovery time. Its internal drain and source inductances (3.5–4.5 nH and 7.5 nH respectively) are specified to support accurate high-frequency switching loss modeling in hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 55 V - maximum blocking voltage before avalanche; defines usable input voltage range in buck/boost converters |
| ID (continuous) | 100 A @ Tmb = 25 °C - supports high-output-current power stages without parallel devices |
| RDS(ON) | ≤4.2 mΩ @ VGS = 10 V - enables <1 W conduction loss at 50 A, critical for >95% efficiency designs |
| Rth j-mb | 0.5 K/W - allows direct heatsink mounting with minimal thermal interface resistance for stable 175 °C operation |
| Qg(tot) | 226 nC - determines gate driver strength requirement; compatible with common 2–4 A peak gate drivers |
| EAS | 357 mJ - specifies single-pulse unclamped inductive avalanche energy handling capability |
| VSD | 0.78–1.2 V @ IF = 25 A - forward voltage of integrated body diode affects synchronous rectification losses |
Pinout & Package
PSMN004-55W is housed in the SOT429 (TO-247) plastic through-hole package with isolated mounting base. Pin 2 (drain) is electrically connected to the metal tab for direct heatsink attachment and low-inductance power path routing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Control terminal; requires low-impedance drive due to 226 nC total gate charge |
| 2 | Drain | Main power output terminal; internally bonded to mounting tab for thermal and electrical connection to heatsink |
| 3 | Source | Power return reference; forms low-inductance loop with gate and drain for reduced switching ringing |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive compatibility | Guaranteed turn-on with 5 V microcontroller outputs; eliminates need for level-shifting circuitry |
| TrenchMOS technology | Delivers industry-leading RDS(ON)/area ratio, reducing die size and thermal mass for faster transient response |
| Low thermal resistance (Rth j-mb) | 0.5 K/W enables sustained 100 A operation with modest heatsinking - no forced air required |
| Fast switching with controlled Qgd/Qgs | Miller charge (106 nC) is 47% of total gate charge, supporting clean hard-switching with minimal shoot-through risk |
| Robust body diode | 100 A continuous / 300 A pulsed source current rating supports freewheeling in non-synchronous topologies |
Applications
| DC-DC Converters | Switched-Mode Power Supplies |
|---|---|
Use Scenario: High-current step-down (buck) converter in server VRMs delivering up to 100 A to CPU cores. IC Role / Device Role / Timing Role: Primary high-side power switch operating at 200–500 kHz with synchronous rectification. Use Value: 4.2 mΩ RDS(ON) limits conduction loss to <1.05 W at 50 A, directly improving full-load efficiency by ~0.8% over 6 mΩ alternatives. | Use Scenario: Primary switch in 1 kW telecom rectifier front-end with universal AC input. IC Role / Device Role / Timing Role: Main power switch in LLC resonant half-bridge configuration with zero-voltage switching. Use Value: Low Qgd/Qgs ratio ensures predictable turn-off timing under variable load, maintaining ZVS across line and load range. |
| Motor Drive Inverters | Industrial UPS Systems |
Use Scenario: Phase-leg switch in 3-phase 15 kW servo drive controlling permanent magnet motors. IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid inverter stage, commutating up to 100 A RMS. Use Value: 357 mJ avalanche energy rating allows safe operation during short-circuit fault conditions without external snubbers. | Use Scenario: Battery-side switch in online double-conversion UPS handling 5 kVA backup loads. IC Role / Device Role / Timing Role: Bidirectional power switch managing battery charge/discharge paths with reverse diode conduction. Use Value: Body diode VSD ≤ 1.2 V at 75 A minimizes conduction loss during battery discharge mode, extending runtime by ~3% vs. higher-VF devices. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP100NF55 | RDS(ON) = 5.5 mΩ @ 10 V; higher Qg = 260 nC; same TO-247 package | Slightly lower avalanche energy (280 mJ); marginally higher conduction loss at 50 A | Acceptable where gate drive strength exceeds 4 A and efficiency targets allow +0.3 W loss |
| IRFP4110PBF | RDS(ON) = 4.5 mΩ @ 10 V; lower Qgd/Qgs ratio; Rth j-mb = 0.6 K/W | Higher VGS(th) (2–4 V) reduces noise immunity; less suitable for 3.3 V logic control | Preferred when driving from 10 V gate supply and thermal margin permits 0.1 K/W higher resistance |
Compared with STP100NF55 and IRFP4110PBF, the PSMN004-55W offers the lowest RDS(ON) at 5 V gate drive and best thermal resistance, making it optimal for space-constrained, high-efficiency 5 V-controlled power stages where avalanche robustness and body diode performance are critical.
Availability
PSMN004-55W is available at Aetrix Electronics and suitable for d.c.-to-d.c. converters, switched-mode power supplies, and motor drive inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for PSMN004-55W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Philips Semiconductors (now NXP Semiconductors) is a Dutch semiconductor pioneer known for innovations in power management, RF, and automotive ICs.
The TrenchMOS product line was engineered specifically for high-current, high-efficiency power conversion systems demanding ultra-low RDS(ON), fast switching, and rugged avalanche performance in industrial and telecom infrastructure.
FAQ
What is the maximum continuous drain current rating for PSMN004-55W?
The PSMN004-55W is rated for 100 A continuous drain current at mounting base temperature (Tmb) of 25 °C with VGS ≥ 5 V. This rating is package-limited and remains constant up to Tmb = 100 °C per the derating curve in the datasheet. At higher temperatures, current must be reduced per the normalized ID% vs. Tmb plot.
Does PSMN004-55W support logic-level gate drive?
Yes, PSMN004-55W is explicitly designed as a logic-level MOSFET. Its gate threshold voltage (VGS(TO)) is 1.0–2.0 V at 25 °C, and it achieves RDS(ON) ≤ 4.5 mΩ at VGS = 5 V - ensuring full enhancement with standard 5 V microcontroller or gate driver outputs without level shifting.
What is the thermal resistance junction-to-mounting-base for PSMN004-55W?
The PSMN004-55W has a maximum thermal resistance of Rth j-mb = 0.5 K/W, measured from silicon junction to the metal mounting base (pin 2/tab). This value assumes proper mechanical mounting with thermal interface material and is critical for calculating junction temperature rise under 100 A operation.
Can PSMN004-55W be used in avalanche-prone circuits?
Yes, PSMN004-55W is characterized for unclamped inductive switching with a specified non-repetitive avalanche energy (EAS) of 357 mJ at Tj = 25 °C. This makes it suitable for circuits where inductive energy must be safely absorbed during switching transitions or fault conditions without external clamping.
What is the body diode forward voltage of PSMN004-55W?
The body diode forward voltage (VSD) of PSMN004-55W is 0.78–1.2 V at IF = 25 A and VGS = 0 V, rising to 0.92 V typical at IF = 75 A. This low VSD supports efficient freewheeling in non-synchronous converters and reduces conduction loss in bidirectional power paths.
PSMN004-55W,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.2mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 226 nC @ 5 V
- Vgs (Max):
- ±15V
- Input Capacitance (Ciss) (Max) @ Vds:
- 13000 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 300W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247
PSMN004-55W,127 FAQ
1.How can I place an order for PSMN004-55W,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for PSMN004-55W,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PSMN004-55W,127 reliable?
The price and inventory of PSMN004-55W,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN004-55W,127 is usually 5 days.
3.What payment methods are accepted for PSMN004-55W,127?
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4.How is shipping managed for PSMN004-55W,127?
PSMN004-55W,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PSMN004-55W,127 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PSMN004-55W,127?
For technical support, including PSMN004-55W,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN004-55W,127 requirements.
6.How does Aetrix verify that PSMN004-55W,127 is sourced from the original manufacturer or authorized distributors?
All PSMN004-55W,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN004-55W,127 meets industry standards.
7.What is the process for return or replacement of PSMN004-55W,127?
All PSMN004-55W,127 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN004-55W,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PSMN004-55W,127 part is unused and in its original packaging.
Return procedure for PSMN004-55W,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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