NXP Semiconductors PSMN005-25D,118

Overview

PSMN005-25D from Philips Semiconductors is an N-channel logic-level TrenchMOS transistor in SOT428 (DPAK) package, rated for 25 V V_DSS, 75 A continuous drain current at T_mb = 25 °C, and R_DS(ON) ≤ 7.5 mΩ at V_GS = 5 V. It delivers fast switching, low conduction loss, and robust avalanche capability (E_AS = 120 mJ), making it suitable for high-efficiency DC-DC converters and switched-mode power supplies.

For engineers reviewing the PSMN005-25D datasheet, PSMN005-25D pinout, PSMN005-25D application, or PSMN005-25D equivalent, key selection factors include its logic-level gate drive compatibility (V_GS(th) = 1–2 V), thermal resistance to mounting base (R_{th j-mb} = 1.2 K/W), and body diode recovery characteristics (t_rr = 140 ns, Q_rr = 0.27 µC).

Technical Context

The PSMN005-25D employs Philips' proprietary TrenchMOS technology to minimize on-state resistance while maintaining stable threshold voltage across temperature (V_GS(TO) = 0.5–2.3 V). Its gate charge profile (Q_g(tot) = 60 nC, Q_gd = 32 nC) supports efficient high-frequency switching in synchronous rectification and PWM control stages.

Designed for surface-mount operation with the tab connected to drain, the device features internal drain and source inductances (L_d = 3.5 nH, L_s = 7.5 nH) that influence switching waveform integrity. The body diode exhibits low forward voltage (V_SD = 0.95–1.2 V at 25 A) and controlled reverse recovery, enabling use in freewheeling paths without external Schottky supplementation.

Key Specifications

Pinout & Package

SOT428 (DPAK) surface-mount package with isolated leadframe; metal tab is electrically connected to drain and serves as primary thermal interface. Pin 2 (drain1) is internally connected to the tab and not externally accessible.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with IRLZ44NPBF and DMN2004LK-7, the PSMN005-25D uniquely combines 25 V rating, 75 A current, 7.5 mΩ R_DS(ON) at 5 V, and DPAK thermal performance-making it optimal for medium-power, logic-driven switching where thermal management and conduction loss are critical.

Availability

PSMN005-25D is available at Aetrix Electronics and suitable for DC-DC converters, switched-mode power supplies, and motor drive half-bridges requiring stable component supply and long-term industrial availability.

Supply support for PSMN005-25D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Philips Semiconductors (now NXP Semiconductors) is a global semiconductor innovator with leadership in power MOSFETs, analog ICs, and automotive electronics.

The PSMN005-25D belongs to Philips' SiliconMAX TrenchMOS family, engineered specifically for high-efficiency, low-voltage power conversion in industrial and telecom infrastructure where logic-level drive and thermal robustness are essential.

FAQ

What is the maximum continuous drain current rating for the PSMN005-25D at 100 °C mounting base temperature?

The PSMN005-25D supports 70 A continuous drain current at T_mb = 100 °C and V_GS = 5 V, as specified in the Limiting Values table. This derating reflects thermal constraints of the SOT428 package and ensures safe junction temperature operation up to 175 °C. Designers must verify PCB copper area and heatsinking to maintain T_mb ≤ 100 °C under full load.

Does the PSMN005-25D have a specified gate threshold voltage range, and how does it vary with temperature?

Yes, the PSMN005-25D has a gate threshold voltage V_GS(TO) of 1.0–2.0 V at T_j = 25 °C, tightening to 0.5–2.3 V across the full junction temperature range (−55 °C to +175 °C). This wide specification ensures reliable turn-on at elevated temperatures and prevents unintended conduction at cold start, critical for automotive and industrial environments.

Can the PSMN005-25D be used in avalanche mode, and what are the validated conditions?

Yes, the PSMN005-25D is rated for non-repetitive avalanche with E_AS = 120 mJ under defined conditions: unclamped inductive load, I_AS = 75 A, t_p = 100 µs, V_DD ≤ 15 V, R_GS = 50 Ω, and V_GS = 5 V. This rating is validated per IEC 134 and supports robustness in hard-switched topologies without external clamping.

What is the thermal resistance from junction to mounting base (R_{th j-mb}) for the PSMN005-25D, and why is it important?

The PSMN005-25D has a maximum R_{th j-mb} of 1.2 K/W, measured from silicon junction to the metal tab. This low value enables efficient heat transfer to an external heatsink or PCB copper pour, allowing sustained 75 A operation when properly mounted. It is significantly lower than R_{th j-a} (50 K/W), confirming that thermal design must prioritize tab-to-heatsink interface over ambient convection.

How does the body diode performance of the PSMN005-25D compare to discrete Schottky diodes in synchronous rectification?

The PSMN005-25D body diode has V_SD = 0.95–1.2 V at 25 A and t_rr = 140 ns, offering lower forward drop than many 30 V Schottky diodes (typically 0.4–0.6 V at low current but rising sharply above 10 A) while providing integrated functionality. Its Q_rr = 0.27 µC is well-controlled, reducing switching loss and EMI compared to slower bipolar diodes-making it viable for synchronous rectification without external diode substitution.