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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN005-30K,518

Name: PSMN005-30K,518
Brand: Nexperia USA Inc.
SKU: PSMN005-30K,518
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN005-30K,518

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: PSMN005-30K,518.pdf

Description:: MOSFET N-CH 30V 20A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PSMN005-30K,518 from Nexperia is a logic-level N-channel TrenchMOS FET in SO8 (SOT96-1) package, designed for high-efficiency switching in DC-DC converters and motherboard power stages. It delivers 4.4 mΩ R_DS(on) at V_GS = 10 V and I_D = 15 A, supports 30 V V_DS, 20 A continuous drain current, and exhibits fast switching with 14 nC Q_GD - enabling compact, high-frequency power designs.

For engineers reviewing the PSMN005-30K,518 datasheet, PSMN005-30K,518 pinout, PSMN005-30K,518 application, or PSMN005-30K,518 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1–3 V), low conduction loss under 15 A load, thermal resistance to solder point (R_th(j-sp) = 20 K/W), and SO8 footprint suitability for dense PCB layouts.

Technical Context

This device uses TrenchMOS silicon technology to achieve low R_DS(on) and fast dynamic performance. Its gate threshold voltage (V_GS(th)) ranges from 0.5 V at T_j = 150 °C to 3.4 V at T_j = −55 °C, ensuring robust turn-on across industrial temperature extremes. The integrated body diode has V_SD = 0.81–1.3 V at I_S = 15 A and t_rr = 35 ns, supporting synchronous rectification and freewheeling in buck topologies.

Dynamic parameters are optimized for hard-switched SMPS: Q_G(tot) = 34 nC at V_GS = 4.5 V, C_iss = 3100 pF, and switching times (t_d(on) = 18 ns, t_f = 45 ns) enable operation beyond 500 kHz without excessive gate drive loss.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in industrial/computing supplies.
R_DS(on)	4.4 mΩ (typ) at V_GS = 10 V, I_D = 15 A, T_j = 25 °C - Enables <1 W conduction loss at 20 A, reducing heatsink requirements.
I_D (cont)	20 A at T_sp = 80 °C - Supports high-current CPU/GPU VRMs when mounted on metal-clad PCBs.
Q_GD	14 nC - Low gate-drain charge minimizes Miller-induced switching delay and improves controllability in high-dV/dt environments.
R_th(j-sp)	20 K/W - Thermal resistance from junction to solder point enables direct thermal coupling to copper pour, critical for sustained 3.5 W dissipation.
t_rr	35 ns - Fast reverse recovery of internal body diode reduces switching loss and EMI in synchronous buck converters.

Pinout & Package

PSMN005-30K,518 is housed in an SO8 plastic small outline package (SOT96-1), 3.9 mm body width, with exposed drain pads on pins 5–8 for enhanced thermal and current handling.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce bond wire inductance and improve current sharing in high-di/dt applications.
4	Gate (G)	Single gate input with 100 nA max IGSS at ±20 V - ensures low static power consumption and stable CMOS-level drive.
5–8	Drain (D)	Four paralleled drain terminals provide low-inductance, high-current path to PCB ground plane and support >60 A pulsed current (I_DM).

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) = 1–3 V at 25 °C enables direct interface with 3.3 V/5 V microcontrollers and PWM controllers without level-shifting.
Low R_DS(on) × Q_G figure-of-merit	4.4 mΩ × 34 nC = 149.6 mΩ·nC - balances conduction and switching loss for high-efficiency 300–1000 kHz operation.
TrenchMOS silicon process	Enables uniform cell layout and reduced specific on-resistance vs planar MOSFETs, improving power density in space-constrained VRMs.
Enhanced body diode ruggedness	Q_r = 20 nC and t_rr = 35 ns support reliable synchronous rectification without external Schottky replacement.

Applications

Server CPU Voltage Regulator

Industrial DC-DC Converter

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.2 V @ up to 120 A to modern x86 processors.

IC Role / Device Role / Timing Role: Synchronous high-side switch operating at 500–800 kHz with 3.3 V gate drive from digital PWM controller.

Use Value: 4.4 mΩ R_DS(on) limits conduction loss to ≤0.63 W per phase at 20 A, while SO8 thermal design sustains junction temperature below 125 °C.

Use Scenario: 24 V input to 5 V/12 V isolated or non-isolated DC-DC module for PLC I/O modules and sensor interfaces.

IC Role / Device Role / Timing Role: Primary-side switching FET in hard-switched flyback or forward converter, driven by UC384x-class controller.

Use Value: 30 V V_DS rating provides 2× margin over 24 V rail transients; fast t_f = 45 ns reduces switching loss at 250 kHz operation.

Laptop Motherboard Power Stage

Telecom Point-of-Load Regulator

Use Scenario: Compact 3-phase VRM for GPU or SoC core supply on thin-profile notebook motherboards with limited board area.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck stage, controlled by integrated driver IC with 3.3 V logic output.

Use Value: Logic-level V_GS(th) ensures full enhancement at 3.3 V gate drive; paralleled source pins minimize source inductance and improve current sharing accuracy.

Use Scenario: 48 V telecom input to 3.3 V/1.8 V PoL regulator powering FPGA, ASIC, or SerDes PHY in base station equipment.

IC Role / Device Role / Timing Role: Secondary-side synchronous FET in interleaved buck converter, switching at 1 MHz with adaptive gate drive.

Use Value: C_iss = 3100 pF and Q_G = 34 nC allow efficient 1 MHz operation with <2 W total gate drive power using discrete gate drivers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 5.2 mΩ @ 10 V, SO8 package, but higher Q_G = 42 nC and C_iss = 3700 pF.	Higher gate charge increases drive loss above 300 kHz; less suitable for 1 MHz PoL designs.	Preferable where lower cost outweighs efficiency loss in <300 kHz telecom supplies.
DMN3022LSD-13	R_DS(on) = 4.8 mΩ @ 10 V, same SO8 footprint, but V_GS(th) = 1.2–2.4 V and no specified t_rr or Q_r.	Lacks published body diode recovery data - unsuitable for synchronous rectification without external validation.	Acceptable for high-side switching only; avoid in low-side synchronous configurations requiring fast diode recovery.

Compared with IRLHS6342TRPBF and DMN3022LSD-13, PSMN005-30K,518 offers the lowest R_DS(on) × Q_GD product (61.6 mΩ·nC), verified t_rr/Q_r for synchronous use, and tighter V_GS(th) distribution - making it optimal for high-frequency, high-reliability computing and telecom power stages.

Availability

PSMN005-30K,518 is available at Aetrix Electronics and suitable for server CPU voltage regulators, industrial DC-DC converters, and laptop motherboard power stages requiring stable component supply, long-lifecycle support, and traceable sourcing for volume production.

Supply support for PSMN005-30K,518 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs, ESD protection, and logic ICs.

The SiliconMAX logic-level MOSFET product line targets high-efficiency, high-density power conversion in computing and communications infrastructure - emphasizing low R_DS(on), fast switching, and robust thermal performance in standard surface-mount packages.

FAQ

Is PSMN005-30K,518 suitable for automotive applications?

No. This part is explicitly qualified only for computing, communications, consumer, and industrial applications per its product profile. It lacks AEC-Q101 qualification, automotive-specific reliability testing, and extended temperature grade support beyond −55 °C to +150 °C junction range. Automotive designs require Nexperia's dedicated automotive-grade variants such as PSMN2R0-30YLC.

What is the maximum recommended gate drive voltage for reliable operation?

The absolute maximum V_GS is ±20 V per limiting values, but the device is characterized and optimized for 4.5 V and 10 V gate drive. For logic-level compatibility and long-term reliability, Nexperia recommends limiting V_GS to ≤12 V in continuous operation to avoid gate oxide stress and ensure >1000-hour lifetime under rated conditions.

How does the SO8 (SOT96-1) package support thermal management in high-power operation?

The SOT96-1 package features four paralleled drain leads (pins 5–8) that serve as primary thermal paths to the PCB copper pour. With R_th(j-sp) = 20 K/W to solder point, mounting on ≥10 cm² 2-oz copper with thermal vias achieves ≤45 °C temperature rise at 3.5 W dissipation - enabling operation without external heatsinks in most VRM and DC-DC applications.

Can PSMN005-30K,518 be used as a low-side switch with 3.3 V microcontroller GPIO?

Yes. Its V_GS(th) range (0.5–3.4 V) and guaranteed R_DS(on) ≤8 mΩ at V_GS = 4.5 V ensure full enhancement with 3.3 V logic. At I_D = 10 A, R_DS(on) remains ≤6.6 mΩ (typ) at V_GS = 4.5 V, delivering <0.66 W conduction loss - validated in Figure 9 of the datasheet for 3.8–4.5 V drive.

PSMN005-30K,518 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 34 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3100 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

PSMN005-30K,518 FAQ

1.How can I place an order for PSMN005-30K,518 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN005-30K,518 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN005-30K,518 reliable?

The price and inventory of PSMN005-30K,518 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN005-30K,518 is usually 5 days.

3.What payment methods are accepted for PSMN005-30K,518?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN005-30K,518 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN005-30K,518?

PSMN005-30K,518 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN005-30K,518 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN005-30K,518?

For technical support, including PSMN005-30K,518 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN005-30K,518 requirements.

6.How does Aetrix verify that PSMN005-30K,518 is sourced from the original manufacturer or authorized distributors?

All PSMN005-30K,518 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN005-30K,518 meets industry standards.

7.What is the process for return or replacement of PSMN005-30K,518?

All PSMN005-30K,518 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN005-30K,518, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN005-30K,518 part is unused and in its original packaging.

Return procedure for PSMN005-30K,518:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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