NXP Semiconductors PSMN005-55B,118

Overview

PSMN005-55B,118 from NXP Semiconductors (formerly Philips) is an N-channel logic-level TrenchMOS™ power MOSFET in SOT404 (D2PAK) surface-mount package, rated for 55 V V_DSS, 75 A continuous drain current at T_mb = 25 °C, and R_DS(ON) ≤ 5.8 mΩ at V_GS = 10 V. It serves as a high-efficiency synchronous rectifier or main switch in d.c.-to-d.c. converters and switched-mode power supplies.

For engineers reviewing the PSMN005-55B,118 datasheet, PSMN005-55B,118 pinout, PSMN005-55B,118 application, or PSMN005-55B,118 equivalent, key selection criteria include its low R_DS(ON) at 5 V gate drive, 268 mJ unclamped avalanche energy rating, thermal resistance of 0.65 K/W junction-to-mounting-base, and body diode reverse recovery time of 80 ns - all critical for high-frequency, high-current power stage design.

Technical Context

This device employs Philips' proprietary TrenchMOS™ technology to minimize on-state resistance while maintaining robust switching performance. Its logic-level gate threshold (V_GS(TO) = 1.0–2.0 V at 25 °C) enables direct drive from 3.3 V or 5 V controllers without level-shifting circuitry.

The SOT404 package features an exposed mounting base thermally connected to the drain, enabling efficient heat transfer to PCB copper or heatsinks. Internal drain inductance is 3.5 nH (measured from tab to die center), and total gate charge is 103 nC at V_GS = 5 V, supporting fast turn-on with controlled dV/dt.

Key Specifications

Pinout & Package

SOT404 (D2PAK) surface-mount package with exposed drain-connected mounting base; pin 2 is internal and inaccessible - only pins 1 (gate), 3 (source), and tab (drain) are externally accessible.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with STP75NF55 and IRF1405PBF, PSMN005-55B,118 delivers superior thermal performance (0.65 K/W vs. ≥1.0 K/W), verified avalanche ruggedness (268 mJ), and true logic-level operation down to 4.5 V gate drive - making it optimal for high-density, high-reliability SMT power stages.

Availability

PSMN005-55B,118 is available at Aetrix Electronics and suitable for d.c.-to-d.c. converters, switched-mode power supplies, and motor drive inverters requiring stable component supply, long-lifecycle availability, and traceable sourcing.

Supply support for PSMN005-55B,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors, headquartered in Eindhoven, Netherlands, develops high-performance analog and power semiconductors for automotive, industrial, and computing markets.

The PSMN005-55B,118 belongs to NXP's SiliconMAX™ TrenchMOS™ portfolio, engineered specifically for high-current, high-efficiency power conversion in space-constrained applications where low R_DS(ON), fast switching, and thermal resilience are essential.

FAQ

What is the maximum gate-source voltage rating for PSMN005-55B,118?

The PSMN005-55B,118 has a continuous gate-source voltage rating of ±15 V and a peak pulsed rating of ±20 V at T_j ≤ 150 °C. Exceeding ±15 V continuously risks gate oxide degradation; transient spikes must be clamped below ±20 V using Zener diodes or gate drivers with built-in protection. This specification is confirmed in the Absolute Maximum Ratings table of the October 1999 datasheet.

Can PSMN005-55B,118 operate reliably with a 3.3 V gate drive?

Yes - PSMN005-55B,118 is a logic-level MOSFET with V_GS(TO) = 1.0–2.0 V at 25 °C, ensuring full enhancement at 3.3 V. At V_GS = 3.3 V, R_DS(ON) increases to ~9.5 mΩ (interpolated from 4.5 V/6.7 mΩ and 5 V/6.3 mΩ data), which remains usable in medium-duty-cycle applications. The PSMN005-55B,118 datasheet confirms operation down to 4.5 V, validating 3.3 V feasibility with appropriate derating.

What is the thermal resistance from junction to mounting base for PSMN005-55B,118?

The thermal resistance from junction to mounting base (R_{th j-mb}) for PSMN005-55B,118 is 0.65 K/W maximum, as specified in the Thermal Resistances section of the datasheet. This value assumes proper soldering of the exposed drain tab to a minimum 10 cm² copper pour on a 2-layer PCB. The PSMN005-55B,118 achieves this low R_th via direct die-to-tab thermal path in the SOT404 package.

Does PSMN005-55B,118 have a specified avalanche energy rating?

Yes - PSMN005-55B,118 is rated for 268 mJ of non-repetitive avalanche energy (E_AS) under unclamped inductive load conditions (I_AS = 75 A, t_p = 100 µs, V_DD ≤ 15 V). This rating is explicitly listed in the Avalanche Energy Limiting Values table and confirms ruggedness against transient overvoltage events common in hard-switched power converters.

How does the body diode performance of PSMN005-55B,118 compare to discrete Schottky diodes?

The PSMN005-55B,118 body diode has V_SD = 0.85–1.2 V at 25–75 A and t_rr = 80 ns, offering lower forward voltage than typical 45 V Schottkys (≥0.5 V) at high current but slower recovery than ultrafast Schottkys (<30 ns). Its integrated nature eliminates extra footprint and parasitic inductance, making it ideal for synchronous rectification where timing control and layout simplicity outweigh marginal V_F advantages of discrete diodes.