NXP Semiconductors PSMN005-55P,127

Overview

PSMN005-55P from NXP Semiconductors (formerly Philips) is an N-channel logic-level TrenchMOS™ power transistor in SOT78 (TO-220AB) package, rated for 55 V V_DSS, 75 A continuous drain current at T_mb = 25 °C, and R_DS(ON) ≤ 5.8 mΩ at V_GS = 10 V. It serves as a high-efficiency synchronous rectifier or primary-side switch in d.c.-to-d.c. converters and switched-mode power supplies.

For engineers reviewing the PSMN005-55P datasheet, PSMN005-55P pinout, PSMN005-55P application, or PSMN005-55P equivalent, key selection criteria include its low R_DS(ON) at 5 V gate drive, avalanche energy rating of 268 mJ, thermal resistance R_{th j-mb} = 0.65 K/W, and TO-220AB-compatible mounting base interface.

Technical Context

This device employs Philips' proprietary TrenchMOS™ technology to minimize on-state resistance while maintaining fast switching performance (t_d(on) = 45 ns, t_f = 235 ns) and robust avalanche capability (E_AS = 268 mJ). Its logic-level gate threshold (V_GS(TO) = 1.0–2.0 V) enables direct drive from 3.3 V or 5 V controllers without level-shifting.

The integrated body diode supports freewheeling operation with V_SD = 0.85–1.2 V at I_F = 25 A and reverse recovery time t_rr = 80 ns. Thermal design is simplified by the low junction-to-mounting-base resistance (0.65 K/W), enabling high-power operation with standard heatsinks.

Key Specifications

Pinout & Package

The PSMN005-55P is housed in the SOT78 (TO-220AB) plastic single-ended package with heatsink mounting. Pin 2 (drain) is internally connected to the metal tab, which serves as the primary thermal and electrical drain connection. The package has three leads: Gate (pin 1), Drain (pin 2/tab), Source (pin 3).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with STP75NF55 and IRFZ44NPBF, the PSMN005-55P delivers superior efficiency via lower R_DS(ON) and better thermal management, while its guaranteed avalanche rating provides design margin absent in the alternatives-critical for industrial and telecom power stages.

Availability

PSMN005-55P is available at Aetrix Electronics and suitable for server VRM power stages, industrial DC-DC converters, and telecom rectifier modules requiring stable component supply and long-term manufacturability.

Supply support for PSMN005-55P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and IoT applications. Formerly Philips Semiconductors, it maintains legacy product lines with full technical and supply chain support.

The PSMN005-55P belongs to the SiliconMAX™ family of logic-level TrenchMOS™ transistors, engineered specifically for high-current, high-efficiency power conversion in space-constrained and thermally demanding environments.

FAQ

What is the maximum continuous drain current rating for the PSMN005-55P at 100 °C mounting base temperature?

The PSMN005-55P supports 75 A continuous drain current at T_mb = 100 °C when V_GS ≥ 5 V, as confirmed in the Limiting Values table. This reflects derating based on thermal resistance and package capability-not ambient temperature. The device maintains full 75 A rating up to 100 °C mounting base, making it suitable for convection-cooled industrial power supplies.

Does the PSMN005-55P have a specified avalanche energy rating, and how is it tested?

Yes, the PSMN005-55P has a non-repetitive avalanche energy rating of 268 mJ, measured under unclamped inductive load conditions: I_AS = 75 A, t_p = 100 µs, T_j = 25 °C, V_DD ≤ 15 V, R_GS = 50 Ω, and V_GS = 5 V. This rating is defined per IEC 134 and ensures robustness against transient overvoltage events in real-world switching applications.

Can the PSMN005-55P be driven directly from a 3.3 V microcontroller GPIO without a gate driver?

Yes-the PSMN005-55P has a gate threshold voltage V_GS(TO) of 1.0–2.0 V and achieves R_DS(ON) ≤ 6.3 mΩ at V_GS = 5 V and ≤ 6.7 mΩ at V_GS = 4.5 V. While full enhancement occurs at 5 V, it remains functional at 3.3 V with higher R_DS(ON); however, for reliable 75 A operation, a 5 V gate drive is recommended. A buffer may be needed for fast switching.

What is the thermal resistance from junction to mounting base (R_{th j-mb}) for the PSMN005-55P, and how does it impact heatsink selection?

The PSMN005-55P has a maximum R_{th j-mb} of 0.65 K/W, with typical values near this limit. This low value means that for 100 W dissipation, the junction-to-mounting-base temperature rise is only ~65 K. When paired with a heatsink having R_{th mb-a} ≤ 1.0 K/W, total R_{th j-a} stays below 1.65 K/W-enabling safe operation below 150 °C junction temperature even in sealed enclosures.

Is the PSMN005-55P pin-compatible with the PSMN005-55B variant, and what are the key mechanical differences?

No-the PSMN005-55P (SOT78/TO-220AB) and PSMN005-55B (SOT404/D2PAK) are functionally identical but mechanically incompatible. The PSMN005-55P uses through-hole leads and a metal tab for heatsink mounting, while the PSMN005-55B is surface-mount with a center-tab exposed pad. Their pinouts differ: PSMN005-55P pins are Gate–Drain–Source with Drain connected to tab; PSMN005-55B has Gate–Source–Drain with Drain connected to the center pad.