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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN005-75B,118

Name: PSMN005-75B,118
Brand: Nexperia USA Inc.
SKU: PSMN005-75B,118
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN005-75B,118

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: PSMN005-75B,118.pdf

Description:: MOSFET N-CH 75V 75A D2PAK

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Product details

Overview

PSMN005-75B from Nexperia is a standard-level N-channel TrenchMOS power MOSFET in D2PAK (SOT404) package, designed for high-current DC-DC conversion and OR-ing functions. It delivers 75 V drain-source voltage rating, 75 A continuous drain current at T_mb = 25 °C, and ultra-low 4.3 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C-enabling efficient power delivery in computing motherboard VRMs.

For engineers reviewing the PSMN005-75B datasheet, PSMN005-75B pinout, PSMN005-75B application, or PSMN005-75B equivalent, this device is selected for high-frequency switching topologies requiring low conduction loss, fast turn-on/turn-off (t_d(on) = 37 ns, t_f = 74 ns), and robust avalanche energy handling (500 mJ).

Technical Context

This MOSFET employs TrenchMOS silicon technology to achieve optimized trade-offs between R_DS(on), gate charge (Q_G(tot) = 165 nC), and output capacitance (C_oss = 920 pF). Its gate threshold voltage (V_GS(th)) ranges from 2–4 V at 25 °C, ensuring reliable enhancement-mode operation with standard 10 V gate drive.

The device features an integrated body diode with V_SD = 0.8–1.2 V at I_S = 25 A and exhibits unclamped avalanche ruggedness up to 500 mJ-critical for hard-switched synchronous buck stages and hot-swap OR-ing circuits where transient overvoltage events occur.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	75 V maximum - supports 48 V input bus architectures with 50 % derating margin
R_DS(on)	4.3 mΩ typical at V_GS = 10 V, I_D = 25 A, T_j = 25 °C - minimizes I²R conduction loss in high-current phases
I_D	75 A continuous at T_mb = 25 °C - enables single-device use in 50–60 A per-phase VRM designs
Q_GD	50 nC typical - limits Miller-induced switching delay and improves controllability in high-dV/dt environments
R_th(j-mb)	0.65 K/W - enables direct mounting to copper heatsink pads for thermal management without forced airflow
E_AS	500 mJ non-repetitive avalanche energy - sustains short-circuit events in unclamped inductive switching
C_iss	8250 pF typical - impacts gate driver sizing and influences EMI profile in MHz-range switching

Pinout & Package

PSMN005-75B uses the SOT404 (D2PAK) plastic surface-mount package with three leads: Gate (pin 1), Drain (pin 2, internally connected to mounting base), and Source (pin 3). Pin 2 is not externally accessible-drain connection is made via the exposed metal pad on the underside of the package.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate terminal	Controls channel conduction; requires ≤20 V gate drive; Q_G(tot) = 165 nC defines driver current demand
2 (D)	Drain terminal (internal)	Electrically tied to mounting base; provides primary heat path and high-current return; no external lead
3 (S)	Source terminal	Reference node for gate drive and current sensing; connects to low-side shunt or controller feedback

Key Features

Feature	Design Value
Ultra-low R_DS(on)	4.3 mΩ @ 10 V drives - reduces conduction loss by >30 % vs. comparable 5–6 mΩ MOSFETs in 50 A phase legs
TrenchMOS architecture	Enables <100 ns total switching time (t_d(on) + t_r + t_d(off) + t_f = 328 ns) - supports >1 MHz VRM operation
Robust avalanche rating	500 mJ E_AS - eliminates need for external clamping in synchronous rectifier failure scenarios
Thermal performance	0.65 K/W R_th(j-mb) - allows 150 W dissipation at ΔT = 100 K with minimal heatsink area
Body diode V_SD	0.8–1.2 V @ 25 A - lowers reverse recovery loss during dead-time conduction in synchronous buck converters

Applications

Server VRM Phase Legs

OR-ing Diode Replacement

Use Scenario: High-density 48 V-to-1 V server CPU VRM with multi-phase interleaving and >50 A per phase.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 500 kHz–1 MHz with precise gate timing control.

Use Value: 4.3 mΩ R_DS(on) cuts conduction loss by ~1.2 W per phase versus 6 mΩ alternatives, improving full-load efficiency by 0.4–0.6 %.

Use Scenario: Dual 12 V power supply redundancy in telecom line cards, requiring automatic failover without reverse current.

IC Role / Device Role / Timing Role: Active OR-ing switch controlled by dedicated ideal diode controller (e.g., LTC4359).

Use Value: 75 A rating and 500 mJ avalanche capability enable safe hot-swap insertion and tolerate bus transients up to 75 V without latch-up.

High-Frequency DC-DC Converters

Industrial Motor Drive Half-Bridge

Use Scenario: Compact 24 V input, 5 V/20 A isolated DC-DC module for FPGA power sequencing.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in active clamp forward topology with 1 MHz switching.

Use Value: Fast 74 ns fall time and low C_oss reduce switching loss by 22 % compared to TO-220 equivalents, enabling smaller magnetics.

Use Scenario: 24–48 V BLDC motor drive half-bridge stage in factory automation controllers.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter leg, driven by isolated gate driver with 6 Ω external resistance.

Use Value: 400 A peak drain current rating supports 3× motor stall current surges; 175 °C max junction temperature ensures reliability under ambient 85 °C conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1405PBF	R_DS(on) = 5.3 mΩ @ 10 V; TO-220 package; higher R_th(j-a) = 62 K/W	Limited to lower-frequency (<300 kHz) and lower-current (<50 A) designs due to thermal and conduction constraints	Choose when board space permits through-hole mounting and cost sensitivity outweighs efficiency gains
IXFH75N10P	R_DS(on) = 10.5 mΩ @ 10 V; TO-247 package; higher Q_G = 220 nC	Requires stronger gate driver; unsuitable for >500 kHz operation due to slower switching and higher losses	Prefer only if legacy PCB layout mandates TO-247 footprint and 100 V rating is mandatory

Compared with IRF1405PBF and IXFH75N10P, PSMN005-75B offers superior thermal coupling (0.65 K/W vs. >1.0 K/W), 15–20 % lower R_DS(on), and faster switching-making it optimal for compact, high-efficiency, high-frequency power stages where D2PAK mounting is acceptable.

Availability

PSMN005-75B is available at Aetrix Electronics and suitable for server VRM design, telecom OR-ing systems, and industrial DC-DC converter development requiring stable component supply and long-term production continuity.

Supply support for PSMN005-75B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-volume, high-reliability discrete and logic devices, with roots in Philips Semiconductors and headquartered in Nijmegen, Netherlands.

This device belongs to the SiliconMAX standard-level TrenchMOS family-engineered for mainstream power conversion in computing, communications, and industrial equipment where efficiency, thermal performance, and ruggedness are prioritized over ultra-low-voltage operation.

FAQ

What is the maximum allowable gate-source voltage for PSMN005-75B?

The absolute maximum V_GS is ±20 V under steady-state conditions, with a pulsed peak rating of ±30 V (tp ≤ 50 µs, duty cycle ≤ 25 %). Exceeding ±20 V continuously risks gate oxide degradation; Nexperia recommends limiting drive to 12–15 V for long-term reliability and noise immunity in high-dV/dt environments.

Can PSMN005-75B be used in linear mode (as a pass transistor)?

No-it is not characterized or qualified for linear (saturation) operation. The Safe Operating Area (SOA) curve in Figure 3 shows limited DC capability beyond 10 V V_DS, and thermal runaway risk increases rapidly above T_j = 125 °C in linear mode. This device is intended strictly for switched-mode applications with defined duty cycles and adequate heatsinking.

Is the drain electrically connected to the mounting base?

Yes-pin 2 (drain) is internally bonded to the exposed metal pad on the underside of the D2PAK package, which serves as both the primary electrical connection and thermal path. This pad must be soldered to a large copper area or heatsink; isolation from chassis ground is required unless system topology explicitly references drain to ground.

What is the typical body diode reverse recovery charge (Q_rr)?

The datasheet does not specify Q_rr or t_rr; only V_SD = 0.8–1.2 V at I_S = 25 A is provided. For synchronous rectification, designers should rely on measured waveforms or application notes (e.g., Nexperia AN11158) and assume soft recovery behavior typical of TrenchMOS body diodes-avoiding hard commutation into the diode without snubbing.

PSMN005-75B,118 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 165 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8250 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 230W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

PSMN005-75B,118 FAQ

1.How can I place an order for PSMN005-75B,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN005-75B,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN005-75B,118 reliable?

The price and inventory of PSMN005-75B,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN005-75B,118 is usually 5 days.

3.What payment methods are accepted for PSMN005-75B,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN005-75B,118 transactions.

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4.How is shipping managed for PSMN005-75B,118?

PSMN005-75B,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN005-75B,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN005-75B,118?

For technical support, including PSMN005-75B,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN005-75B,118 requirements.

6.How does Aetrix verify that PSMN005-75B,118 is sourced from the original manufacturer or authorized distributors?

All PSMN005-75B,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN005-75B,118 meets industry standards.

7.What is the process for return or replacement of PSMN005-75B,118?

All PSMN005-75B,118 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN005-75B,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN005-75B,118 part is unused and in its original packaging.

Return procedure for PSMN005-75B,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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