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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN005-75P,127

Name: PSMN005-75P,127
Brand: Nexperia USA Inc.
SKU: PSMN005-75P,127
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN005-75P,127

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: PSMN005-75P,127.pdf

Description:: MOSFET N-CH 75V 75A TO220AB

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Product details

Overview

PSMN005-75P from Nexperia is a standard-level N-channel TrenchMOS power MOSFET in TO-220AB (SOT78) package, designed for high-current, high-frequency switching in DC-DC converters and OR-ing circuits. It delivers 75 V V_DS, 75 A I_D (T_mb = 25 °C), and 4.3 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, enabling low conduction loss in computing and industrial power rails.

For engineers reviewing the PSMN005-75P datasheet, PSMN005-75P pinout, PSMN005-75P application, or PSMN005-75P equivalent, key selection criteria include its 0.65 K/W R_th(j-mb), 50 nC Q_GD, 165 nC Q_G(tot), avalanche energy rating of 500 mJ, and thermal stability up to 175 °C junction temperature.

Technical Context

This device uses TrenchMOS silicon technology to achieve low R_DS(on) and fast switching with 37 ns t_d(on), 73 ns t_r, 144 ns t_d(off), and 74 ns t_f. Its gate threshold voltage ranges from 1 V (T_j = 175 °C) to 4.4 V (T_j = −55 °C), supporting robust turn-on control across wide temperature extremes.

The integrated body diode exhibits V_SD = 1.0 V at I_S = 25 A and T_j = 25 °C, and supports 75 A continuous source current. Avalanche ruggedness is specified at 500 mJ (unclamped, 0.1 ms pulse), enabling reliable operation under inductive load transients.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	75 V - Maximum drain-source blocking voltage; defines safe operating range in 48 V and 54 V bus systems.
R_DS(on)	4.3 mΩ (typ, V_GS = 10 V, I_D = 25 A, T_j = 25 °C) - Enables <1.5 W conduction loss at 60 A, critical for high-efficiency VRMs.
I_D	75 A (continuous, T_mb = 25 °C) - Supports high-current phases in multi-phase CPU/GPU VRMs without parallel devices.
Q_GD	50 nC - Low gate-drain charge minimizes Miller-induced switching delay and improves hard-switching efficiency.
R_th(j-mb)	0.65 K/W - Junction-to-mounting-base thermal resistance enables direct heatsink mounting for >200 W dissipation capability.
E_AS	500 mJ - Non-repetitive avalanche energy rating ensures survivability during unclamped inductive turn-off events.

Pinout & Package

PSMN005-75P is housed in a plastic TO-220AB (SOT78) package with isolated mounting base, optimized for heatsink attachment via single mounting hole. The package provides mechanical robustness and thermal performance suitable for industrial-grade power conversion.

Pin/Terminal	Circuit Role	Design Meaning
1 - G	Gate	Control terminal; requires ≤20 V gate drive; 100 nA I_GSS leakage ensures low standby power.
2 - D	Drain	Main high-side current path; electrically connected to mounting base; must be isolated from heatsink unless referenced to same potential.
3 - S	Source	Power return and reference node; ties gate drive return; forms common node for current sensing and feedback.

Key Features

Feature	Design Value
Low R_DS(on)	4.3 mΩ typ at 10 V drive enables <1.5 W conduction loss at 60 A, reducing thermal burden in dense VRM layouts.
Fast switching	37 ns t_d(on) + 73 ns t_r + 144 ns t_d(off) + 74 ns t_f supports >500 kHz switching in synchronous buck topologies.
TrenchMOS silicon	Enables superior cell density and lower gate charge vs planar MOSFETs, improving figure-of-merit (R_DS(on) × Q_G).
Avalanche-rated	500 mJ E_AS allows safe operation under unclamped inductive switching without external snubbers in OR-ing and hot-swap designs.

Applications

Server VRM Phase FET

OR-ing Diode Replacement

Use Scenario: High-current, multi-phase voltage regulator module supplying CPU/GPU cores in 1U/2U rack servers.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in buck converter phase leg, switching at 300–600 kHz with precise gate timing.

Use Value: 4.3 mΩ R_DS(on) reduces conduction loss by >40% vs legacy 8 mΩ parts, directly lowering board temperature rise and cooling cost.

Use Scenario: Redundant 12 V/48 V power supply backplane where two supplies feed a common rail with automatic fault isolation.

IC Role / Device Role / Timing Role: Active OR-ing switch replacing Schottky diodes; controlled via external gate driver to minimize forward drop.

Use Value: 1.0 V V_SD at 25 A cuts forward voltage drop by ~500 mV vs 1500 mV Schottky, reducing power loss by >12 W per rail at 25 A.

Industrial DC-DC Converter

Hot-Swap Controller Interface

Use Scenario: 48 V input to 12 V output isolated DC-DC converter in programmable logic controller (PLC) power subsystems.

IC Role / Device Role / Timing Role: Primary-side high-side switch in active clamp forward or LLC resonant topology, operating at 200–400 kHz.

Use Value: 0.65 K/W R_th(j-mb) allows direct heatsink mounting without thermal interface material, simplifying mechanical design and improving long-term reliability.

Use Scenario: Inrush current limiting and fault isolation in hot-pluggable I/O modules compliant with IEEE 1621 or IPC-9592.

IC Role / Device Role / Timing Role: Load switch controlled by hot-swap controller (e.g., LTC4215) to manage turn-on slew rate and overcurrent shutdown.

Use Value: 400 A peak drain current (t_p ≤ 10 µs) withstands high dI/dt surges during capacitive load insertion without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFB4115PBF	R_DS(on) = 5.0 mΩ (V_GS = 10 V); Q_G = 190 nC; R_th(j-mb) = 0.75 K/W; TO-220AB package.	Higher gate charge increases switching loss in >300 kHz designs; slightly higher thermal resistance limits power density.	Preferred where gate drive strength exceeds 2 A and thermal margin >0.1 K/W is available.
STP75NF75	R_DS(on) = 7.5 mΩ (V_GS = 10 V); Q_G = 120 nC; R_th(j-mb) = 0.60 K/W; TO-220FP (full-pack) variant.	Higher on-resistance increases conduction loss by ~75% at 60 A; lower Q_G benefits gate drive simplicity but not overall efficiency.	Selected when cost sensitivity outweighs efficiency targets and heatsink mounting is constrained by full-pack insulation.

Compared with IRFB4115PBF and STP75NF75, PSMN005-75P offers the lowest R_DS(on) and best R_DS(on) × Q_G figure-of-merit among TO-220AB N-channel 75 V MOSFETs, making it optimal for high-efficiency, high-power-density server and industrial DC-DC designs.

Availability

PSMN005-75P is available at Aetrix Electronics and suitable for server VRMs, redundant OR-ing power systems, and industrial DC-DC converters requiring stable component supply and long-lifecycle support.

Supply support for PSMN005-75P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection.

This part belongs to the SiliconMAX standard-level TrenchMOS family, engineered specifically for high-current, high-frequency power conversion in computing and industrial infrastructure where efficiency, thermal robustness, and avalanche tolerance are critical.

FAQ

Is PSMN005-75P suitable for synchronous rectification in a 48 V to 12 V buck converter?

Yes. With 4.3 mΩ R_DS(on) at 10 V gate drive and 50 nC Q_GD, it achieves low conduction and switching losses at 300–500 kHz. Its 75 A continuous rating supports ≥60 A output current per phase, and the TO-220AB package enables direct heatsink mounting for thermal management in compact VRM layouts.

What is the maximum safe operating temperature for continuous use?

The absolute maximum junction temperature is 175 °C, and the device is rated for continuous operation at T_j = 175 °C with derated current. At T_mb = 100 °C, the continuous drain current remains 75 A (per Figure 1), confirming suitability for thermally demanding industrial environments with forced-air or heatsink cooling.

Does PSMN005-75P require a negative gate voltage for reliable turn-off?

No. Gate-source voltage is rated from −20 V to +20 V, but turn-off is fully achieved at V_GS = 0 V due to its 2–4 V V_GS(th) at 25 °C. A negative gate bias is unnecessary for standard operation, though −5 V may improve noise immunity in high-dI/dt environments.

Can this MOSFET replace a Schottky diode in an OR-ing application without gate drive complexity?

No - it requires active gate control. Unlike ideal diode controllers with integrated drivers, PSMN005-75P needs an external gate driver (e.g., LM5050-1 or LTC4412) to sense forward voltage and drive the gate. Its benefit lies in <1.0 V forward drop vs >0.45 V for Schottkys, but gate control is mandatory for bidirectional blocking and fast reverse recovery.

PSMN005-75P,127 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 165 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8250 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 230W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

PSMN005-75P,127 FAQ

1.How can I place an order for PSMN005-75P,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN005-75P,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN005-75P,127 reliable?

The price and inventory of PSMN005-75P,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN005-75P,127 is usually 5 days.

3.What payment methods are accepted for PSMN005-75P,127?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN005-75P,127 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN005-75P,127?

PSMN005-75P,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN005-75P,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN005-75P,127?

For technical support, including PSMN005-75P,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN005-75P,127 requirements.

6.How does Aetrix verify that PSMN005-75P,127 is sourced from the original manufacturer or authorized distributors?

All PSMN005-75P,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN005-75P,127 meets industry standards.

7.What is the process for return or replacement of PSMN005-75P,127?

All PSMN005-75P,127 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN005-75P,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN005-75P,127 part is unused and in its original packaging.

Return procedure for PSMN005-75P,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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