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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN006-20K,518

Name: PSMN006-20K,518
Brand: Nexperia USA Inc.
SKU: PSMN006-20K,518
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN006-20K,518

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: PSMN006-20K,518.pdf

Description:: MOSFET N-CH 20V 32A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PSMN006-20K from Nexperia is an N-channel TrenchMOS silicon power MOSFET in SO8 (SOT96-1) package, designed for ultra-low-level gate drive applications. It features 4.2 mΩ R_DS(on) at V_GS = 4.5 V, 20 V V_DS, and 32 A continuous drain current - optimized for high-efficiency DC-DC converters and motherboard VRMs.

For engineers reviewing the PSMN006-20K datasheet, PSMN006-20K pinout, PSMN006-20K application, or PSMN006-20K equivalent, this device is selected for low-voltage, high-current switching where gate drive voltage is constrained to ≤2.5 V and on-resistance stability across temperature is critical.

Technical Context

This MOSFET employs TrenchMOS technology with SiliconMAX architecture to achieve sub-5 mΩ on-resistance at 4.5 V gate drive while maintaining robust threshold voltage control (V_GS(th) = 0.4–0.7 V at 25 °C). Its low Q_GD (13.2 nC) and fast switching (t_r = 32 ns, t_f = 90 ns) support high-frequency synchronous rectification.

The device integrates a source-drain diode with 0.75–1.3 V forward voltage at 3 A and 47 ns reverse recovery time, enabling efficient body-diode conduction during dead-time intervals in buck converters and half-bridge topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage compatible with 12 V input rails and transient margin in point-of-load converters.
R_DS(on) @ 4.5 V	4.2–5.0 mΩ - Enables ≤120 mW conduction loss at 5 A, critical for thermally constrained motherboard layouts.
I_D continuous	32 A @ T_sp = 25 °C - Supports high-current CPU/GPU VRM phases when mounted on metal-clad PCBs.
Q_GD	13.2 nC - Low gate-drain charge minimizes Miller-induced switching delay and improves controllability in hard-switched topologies.
R_th(j-sp)	15 K/W - Thermal resistance from junction to solder point enables direct thermal coupling to copper pour for passive cooling.
V_GS(th)	0.4–0.7 V @ 25 °C - Ensures reliable turn-on with logic-level drivers (e.g., 1.8 V/2.5 V microcontroller GPIO).
C_iss	4350 pF - Input capacitance impacts gate driver sizing and influences EMI behavior in MHz-range switching.

Pinout & Package

PSMN006-20K uses the SOT96-1 (SO8) plastic small outline package with 3.9 mm body width and exposed drain paddle for thermal enhancement. The 8-pin layout supports high-current routing with parallel source and drain terminals.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source pins reduce bond-wire inductance and improve current sharing in high-dI/dt applications.
4	Gate (G)	Single gate terminal with low-input capacitance design; requires <6 Ω external gate resistor for optimal switching.
5, 6, 7, 8	Drain (D)	Four parallel drain pins connected to internal power die paddle - optimized for thermal dissipation and low-inductance output paths.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 1.8 V drive	5.7–8.2 mΩ - Enables operation with next-generation low-voltage controllers without gate boosting.
TrenchMOS SiliconMAX architecture	Optimized cell pitch and trench depth - delivers best-in-class R_DS(on) × Q_G figure of merit for 20 V class.
Low Q_GD/Q_G ratio	13.2 nC / 32 nC = 41% - Reduces risk of false turn-on during high dV/dt commutation in synchronous rectifiers.
Robust body diode	t_rr = 47 ns, Q_r = 17 nC - Minimizes reverse recovery losses in non-complementary switching stages.
Qualified for industrial temp range	T_j = −55 to 150 °C - Validated for sustained operation in server PSU and telecom base station environments.

Applications

Computer Motherboards

DC-to-DC Converters

Use Scenario: Core voltage regulation for modern CPUs and GPUs using multiphase buck converters.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300–1000 kHz with 1.8 V gate drive.

Use Value: 4.2 mΩ R_DS(on) at 4.5 V reduces conduction loss by >18% versus legacy 6 mΩ devices, improving VRM efficiency at 30–60 A load points.

Use Scenario: Secondary-side synchronous rectification in isolated 12 V → 3.3 V/5 V flyback or forward converters.

IC Role / Device Role / Timing Role: Low-side switch controlled by transformer-coupled or opto-isolated gate driver.

Use Value: 0.75 V V_SD at 3 A lowers body-diode conduction loss by ~35% compared to standard Schottky solutions, reducing heat sink requirements.

Switched-Mode Power Supplies

Industrial Motor Control Modules

Use Scenario: Primary-side high-frequency switching in compact AC-DC adapters and USB-PD power bricks.

IC Role / Device Role / Timing Role: Low-voltage auxiliary rail switch in active clamp or resonant LLC secondary stage.

Use Value: 15 K/W R_th(j-sp) allows direct mounting on 2 oz copper thermal pads, eliminating need for thermal vias in space-constrained designs.

Use Scenario: H-bridge half-bridge leg in 24 V BLDC motor gate driver modules for factory automation.

IC Role / Device Role / Timing Role: Low-side current-sense path switch with integrated Kelvin source connection capability.

Use Value: Triple-source pin configuration enables accurate shunt-based current sensing with minimal offset error from parasitic bond wire resistance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC010N04LS	R_DS(on) = 1.0 mΩ @ 4.5 V (lower), but V_DS = 40 V (higher voltage rating); SO8 package with different pinout (G-S-D-S-D-S-D-G).	Higher voltage margin suits 24 V systems; lower R_DS(on) improves efficiency above 10 A but increases cost and gate charge (Q_G = 39 nC).	Select when system input exceeds 15 V or when <1 mΩ conduction loss justifies higher gate drive power and layout complexity.
ON Semiconductor NTMFS4C06NT1G	R_DS(on) = 4.5 mΩ @ 4.5 V (similar), but uses PowerTrench® with 12 V V_GS(max); SO8 with standard pinout (G-S-D-D-D-D-S-S).	Lower gate voltage rating limits compatibility with 12 V gate drivers; slightly higher Q_GD (15.5 nC) increases Miller susceptibility.	Prefer when existing designs use ON Semi ecosystem or require tighter V_GS tolerance control under overvoltage transients.

Compared with BSC010N04LS and NTMFS4C06NT1G, PSMN006-20K offers the lowest V_GS(th) (0.4 V) and best R_DS(on) stability below 2.5 V drive - making it uniquely suited for ultra-low-voltage controller interfaces without level-shifting circuitry.

Availability

PSMN006-20K is available at Aetrix Electronics and suitable for computer motherboards, DC-to-DC converters, and switched-mode power supplies requiring stable component supply and long-term industrial lifecycle support.

Supply support for PSMN006-20K includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions - with manufacturing rooted in process control and automotive-grade quality systems.

This device belongs to Nexperia's SiliconMAX ultra-low-level TrenchMOS family, engineered specifically for high-efficiency, low-voltage power conversion in computing and communications infrastructure where gate drive headroom is limited.

FAQ

What is the maximum safe operating junction temperature for PSMN006-20K?

The absolute maximum junction temperature is 150 °C per IEC 60134 limiting values. Continuous operation above 130 °C degrades R_DS(on) performance and accelerates wear-out; derating curves in Figure 2 show usable power dissipation drops to 50% at T_sp = 100 °C on standard metal-clad boards.

Can PSMN006-20K be used with 1.8 V gate drive in production designs?

Yes - datasheet specifies R_DS(on) = 5.7–8.2 mΩ at V_GS = 1.8 V and I_D = 5 A, with V_GS(th) as low as 0.15 V at 150 °C. This enables direct interface with 1.8 V FPGA I/O banks and low-power microcontrollers without gate boosters.

Does PSMN006-20K have avalanche ruggedness rating?

No avalanche energy rating (E_AS) is specified in the datasheet. The device is not characterized for repetitive unclamped inductive switching; external snubbers or clamping circuits are required in inductive load applications exceeding safe operating area limits shown in Figure 3.

How does the triple-source pin configuration affect PCB layout?

The three parallel source pins (pins 1–3) must be routed to a common low-impedance ground plane with equal-length traces to avoid current imbalance. Use thermal relief-free polygons and ≥0.5 mm trace width per pin to maintain <0.3 mΩ total source loop resistance at 32 A peak current.

PSMN006-20K,518 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 32A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 5mOhm @ 5A, 4.5V

Vgs(th) (Max) @ Id:: 700mV @ 1mA (Typ)

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 2.5 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 4350 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 8.3W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

PSMN006-20K,518 FAQ

1.How can I place an order for PSMN006-20K,518 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN006-20K,518 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN006-20K,518 reliable?

The price and inventory of PSMN006-20K,518 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN006-20K,518 is usually 5 days.

3.What payment methods are accepted for PSMN006-20K,518?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN006-20K,518 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN006-20K,518?

PSMN006-20K,518 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN006-20K,518 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN006-20K,518?

For technical support, including PSMN006-20K,518 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN006-20K,518 requirements.

6.How does Aetrix verify that PSMN006-20K,518 is sourced from the original manufacturer or authorized distributors?

All PSMN006-20K,518 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN006-20K,518 meets industry standards.

7.What is the process for return or replacement of PSMN006-20K,518?

All PSMN006-20K,518 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN006-20K,518, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN006-20K,518 part is unused and in its original packaging.

Return procedure for PSMN006-20K,518:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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