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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN008-75B,118

Name: PSMN008-75B,118
Brand: Nexperia USA Inc.
SKU: PSMN008-75B,118
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN008-75B,118

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: PSMN008-75B,118.pdf

Description:: MOSFET N-CH 75V 75A D2PAK

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Product details

Overview

PSMN008-75B from Nexperia is an N-channel TrenchMOS SiliconMAX standard-level power MOSFET in SOT404 (D2PAK) package, rated for 75 V V_DS, 75 A continuous drain current at T_mb = 25 °C, and 230 W total power dissipation. It features 6.5 mΩ typical R_DS(on) at V_GS = 10 V and T_j = 25 °C, low thermal resistance (R_th(j-mb) = 0.65 K/W), and avalanche ruggedness (E_AS = 395 mJ), targeting high-efficiency DC-to-DC converters and UPS systems.

For engineers reviewing the PSMN008-75B datasheet, PSMN008-75B pinout, PSMN008-75B application, or PSMN008-75B equivalent, key selection criteria include its 75 V blocking capability, 6.5–8.5 mΩ R_DS(on) range across temperature, fast switching (t_d(on) = 18 ns, t_f = 80 ns), and mounting-base thermal interface optimized for high-power PCB layouts.

Technical Context

This MOSFET employs TrenchMOS silicon technology to achieve low on-resistance and high current density in a surface-mount D2PAK package with integrated mounting base connected to drain. Its gate threshold voltage ranges from 2–4 V at 25 °C and remains functional up to 175 °C junction temperature, supporting stable operation in thermally demanding industrial power stages.

The device exhibits fast dynamic performance: Q_GD = 50 nC, Q_G(tot) = 122.8 nC, and C_iss = 5260 pF at V_DS = 25 V, enabling efficient high-frequency switching in synchronous buck converters and motor drive half-bridges where gate drive loss and Miller effect must be minimized.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	75 V maximum drain-source voltage - defines safe operating voltage ceiling in DC-link and flyback applications.
R_DS(on)	6.5 mΩ typ @ V_GS = 10 V, I_D = 25 A, T_j = 25 °C - enables <1.6 W conduction loss at 25 A, critical for thermal management.
I_D	75 A continuous drain current @ T_mb = 25 °C - supports high-current output stages without forced air cooling.
R_th(j-mb)	0.65 K/W junction-to-mounting-base thermal resistance - allows direct heatsink attachment via metal tab for efficient heat extraction.
E_AS	395 mJ non-repetitive avalanche energy @ I_D = 63 A - provides robustness against inductive switching transients in unclamped circuits.
Q_GD	50 nC gate-drain charge - directly impacts Miller plateau duration and turn-off speed in hard-switched topologies.
t_f	80 ns fall time @ V_DS = 38 V, R_G(ext) = 10 Ω - reduces switching losses during high-frequency PWM operation.

Pinout & Package

SOT404 (D2PAK) plastic single-ended surface-mounted package with isolated leads and integral metal mounting base electrically connected to drain terminal. Mounting base enables low-thermal-resistance mechanical attachment to heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control electrode; requires 10 V drive for full enhancement; gate leakage <100 nA at ±20 V.
2 (D)	Drain	Main high-side current path; internally bonded to mounting base - must be electrically isolated from PCB ground plane.
3 (S)	Source	Reference node for gate drive and current sensing; forms return path for load current and body diode conduction.

Key Features

Feature	Design Value
Low R_DS(on) with TrenchMOS	6.5 mΩ typ enables <1.6 W conduction loss at 25 A, reducing thermal design burden in compact power modules.
Mounting-base thermal interface	R_th(j-mb) = 0.65 K/W allows direct heatsink coupling - eliminates need for thermal vias or complex copper pours.
Avalanche-rated ruggedness	395 mJ E_AS supports reliable operation in inductive load switching without external snubbers.
Fast switching dynamics	Q_GD/Q_G(tot) ratio of ~0.4 enables clean turn-off with minimal Miller-induced shoot-through risk.
High-temperature gate stability	V_GS(th) shifts only from 2–4 V (25 °C) to 1–4.4 V (-55 to 175 °C), ensuring predictable turn-on across automotive-grade thermal range.

Applications

DC-DC Converters

Uninterruptible Power Supplies (UPS)

Use Scenario: High-current synchronous buck converter in server VRMs or telecom POL modules.

IC Role / Device Role / Timing Role: Primary high-side switching element handling 50–75 A load current at 100–500 kHz switching frequency.

Use Value: Low R_DS(on) and fast t_f reduce conduction + switching losses, improving efficiency above 94% at full load.

Use Scenario: Inverter stage in line-interactive UPS delivering 1–3 kVA output.

IC Role / Device Role / Timing Role: Half-bridge switch in H-bridge inverter driving transformer-coupled AC output.

Use Value: Avalanche rating absorbs inductive kickback during battery switchover; mounting base simplifies heatsinking in space-constrained enclosures.

Motor Drive Half-Bridges

Industrial SMPS Front-Ends

Use Scenario: 24–48 V BLDC motor controller for HVAC blowers or conveyor drives.

IC Role / Device Role / Timing Role: Low-side or high-side switch in three-phase inverter leg, commutated at ≤20 kHz.

Use Value: Fast trr (70 ns) and low Q_r (100 nC) minimize body diode reverse recovery losses during freewheeling.

Use Scenario: Active clamp forward or LLC resonant converter in industrial 48 V/12 V auxiliary supplies.

IC Role / Device Role / Timing Role: Main switching FET in primary-side power stage operating at 200–400 kHz.

Use Value: High C_iss/C_oss ratio (5260/525 pF) supports ZVS transition; 75 V rating accommodates 48 V input with margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFB4110PBF	75 V V_DS, 100 A I_D, R_DS(on) = 5.8 mΩ, TO-220 package, no mounting base.	Lacks integrated mounting base; requires insulating hardware and higher R_th(j-c) (~1.0 K/W).	Preferred where board-level heatsinking is impractical but TO-220 mechanical retention is acceptable.
STP75NF75	75 V V_DS, 75 A I_D, R_DS(on) = 10.5 mΩ, TO-220 package, higher R_DS(on) and slower switching.	Higher conduction loss (+2.5 W at 25 A); unsuitable for >200 kHz designs due to higher Q_GD.	Lower-cost option for lower-frequency (<100 kHz), lower-efficiency industrial SMPS where thermal margin exists.

Compared with IRFB4110PBF and STP75NF75, PSMN008-75B delivers superior thermal performance via its mounting-base interface and tighter R_DS(on) tolerance, making it optimal for high-density, high-efficiency power stages where PCB real estate and thermal headroom are constrained.

Availability

PSMN008-75B is available at Aetrix Electronics and suitable for DC-to-DC converters, uninterruptible power supplies, and motor drive half-bridges requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for PSMN008-75B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, serving automotive, industrial, and computing markets with ISO/TS 16949-certified manufacturing.

This device belongs to the SiliconMAX standard-level TrenchMOS family, engineered for high-current, high-efficiency power conversion in cost-sensitive industrial and communications infrastructure applications.

FAQ

What is the maximum continuous drain current rating for PSMN008-75B?

The PSMN008-75B is rated for 75 A continuous drain current at mounting base temperature (T_mb) = 25 °C with V_GS = 10 V. Derating applies above 25 °C: current drops to ~40 A at T_mb = 100 °C per Figure 1 in the datasheet. Peak pulsed current is 240 A for tp ≤10 µs.

Is the mounting base electrically isolated from the PCB?

No - the mounting base is internally connected to the drain terminal (Pin 2), as confirmed in Table 2 and Figure 14. When mounted to a heatsink, the drain node becomes electrically tied to that heatsink; isolation requires insulating hardware (e.g., silicone pads, ceramic washers) and careful layout to avoid shorting to ground planes.

Does PSMN008-75B support gate drive at 5 V logic levels?

No - the gate threshold voltage (V_GS(th)) is 2–4 V at 25 °C, but full enhancement requires ≥10 V to achieve specified R_DS(on). At 5 V, R_DS(on) increases significantly (>25 mΩ), causing excessive conduction loss; use with 10 V gate drivers only.

What is the significance of the "SiliconMAX standard level" designation?

"SiliconMAX standard level" indicates this MOSFET is optimized for 10 V gate drive (not logic-level), targets industrial/commercial temperature range (−55 to +175 °C), and emphasizes ruggedness (avalanche rating, high ID/IDM) over ultra-low R_DS(on) - distinguishing it from logic-level or automotive-qualified variants in Nexperia's portfolio.

PSMN008-75B,118 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 8.5mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 122.8 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5260 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 230W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

PSMN008-75B,118 FAQ

1.How can I place an order for PSMN008-75B,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN008-75B,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN008-75B,118 reliable?

The price and inventory of PSMN008-75B,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN008-75B,118 is usually 5 days.

3.What payment methods are accepted for PSMN008-75B,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN008-75B,118 transactions.

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4.How is shipping managed for PSMN008-75B,118?

PSMN008-75B,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN008-75B,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN008-75B,118?

For technical support, including PSMN008-75B,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN008-75B,118 requirements.

6.How does Aetrix verify that PSMN008-75B,118 is sourced from the original manufacturer or authorized distributors?

All PSMN008-75B,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN008-75B,118 meets industry standards.

7.What is the process for return or replacement of PSMN008-75B,118?

All PSMN008-75B,118 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN008-75B,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN008-75B,118 part is unused and in its original packaging.

Return procedure for PSMN008-75B,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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