NXP Semiconductors PSMN008-75P,127

Overview

PSMN008-75P from Nexperia is an N-channel TrenchMOS SiliconMAX standard-level power MOSFET in TO-220AB (SOT78) package, designed for high-current switching in DC-to-DC converters and UPS systems. It delivers 75 V V_DS, 75 A continuous drain current at T_mb = 25 °C, 6.5 mΩ typical R_DS(on) at V_GS = 10 V and T_j = 25 °C, and 230 W total power dissipation with low thermal resistance (R_th(j-mb) = 0.65 K/W).

For engineers reviewing the PSMN008-75P datasheet, PSMN008-75P pinout, PSMN008-75P application, or PSMN008-75P equivalent, key selection criteria include avalanche ruggedness (395 mJ unclamped), fast switching (t_d(on) = 18 ns, t_f = 80 ns), and thermal performance under heatsink-mounted operation.

Technical Context

This device uses TrenchMOS silicon technology to achieve low on-state resistance and high current capability in a standard-level gate drive configuration (V_GS(th) = 2–4.4 V). Its mounting base is internally connected to the drain, enabling direct heatsink attachment without isolation.

The PSMN008-75P supports high-frequency switching with C_iss = 5260 pF, C_oss = 525 pF, and Q_G(tot) = 122.8 nC, while maintaining robust safe operating area (SOA) up to 75 V and 75 A DC, with peak pulsed current rated at 240 A (t_p ≤ 10 µs).

Key Specifications

Pinout & Package

Package: TO-220AB (SOT78), plastic single-ended package with heatsink-mounted mounting base (pin 2/mb electrically connected to drain). Mounting base serves as primary thermal path and electrical connection point for drain.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRF1405PBF and STP75NF75, the PSMN008-75P offers balanced performance: 75 V rating with verified avalanche ruggedness and optimized Q_G/R_DS(on) trade-off for 100+ kHz DC/DC use, while maintaining TO-220AB mechanical compatibility and thermal interface simplicity.

Availability

PSMN008-75P is available at Aetrix Electronics and suitable for DC-to-DC converters, uninterruptible power supplies, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for PSMN008-75P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and power MOSFET semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, and consumer markets.

The PSMN008-75P belongs to Nexperia's SiliconMAX standard-level power MOSFET family, engineered for high-current, high-efficiency switching in thermally constrained environments using TrenchMOS technology.

FAQ

What is the maximum continuous drain current rating for PSMN008-75P?

The PSMN008-75P is rated for 75 A continuous drain current at mounting base temperature (T_mb) of 25 °C with adequate heatsinking. Derating applies above 25 °C per Figure 1 in the datasheet; at T_mb = 100 °C, the continuous current drops to 75 A (same value due to thermal design), but practical design must consider junction temperature limits and thermal interface resistance. The PSMN008-75P maintains this rating only when mounted to a heatsink capable of sustaining the required R_th(j-mb) = 0.65 K/W path.

Does PSMN008-75P support standard-level gate drive?

Yes, the PSMN008-75P is a standard-level N-channel MOSFET with gate threshold voltage (V_GS(th)) ranging from 2 V (min at T_j = 175 °C) to 4.4 V (max at T_j = 25 °C), and fully enhanced at V_GS = 10 V. It does not require logic-level (≤5 V) drive and is compatible with standard 10 V gate drivers used in industrial power supplies. The PSMN008-75P achieves its specified R_DS(on) only at V_GS = 10 V, confirming standard-level operation.

Is the mounting base of PSMN008-75P electrically isolated?

No, the mounting base (mb) of the PSMN008-75P is internally connected to the drain terminal (Pin 2), as confirmed in Table 2 (Pinning information) and Figure 14 (package outline). This means the heatsink must be electrically isolated from system ground if the drain node is not at ground potential. The PSMN008-75P requires insulating hardware (e.g., silicone pads, mica washers) when mounted to a common heatsink shared with other devices.

What is the avalanche energy rating for PSMN008-75P?

The PSMN008-75P is rated for 395 mJ of non-repetitive drain-source avalanche energy (E_DS(AL)S) under defined test conditions: V_GS = 10 V, T_j(init) = 25 °C, I_D = 63 A, V_sup ≤ 15 V, unclamped, R_GS = 50 Ω, t_p = 0.129 ms. This rating is explicitly documented in Table 4 (Limiting values) and confirms ruggedness against inductive switching transients. The PSMN008-75P is qualified for such events without external snubbers in properly designed circuits.

Can PSMN008-75P be used in synchronous rectification applications?

Yes, the PSMN008-75P supports synchronous rectification via its integrated source-drain body diode, which has V_SD = 0.84 V (typ.) at I_S = 25 A and T_j = 25 °C, and reverse recovery time t_rr = 70 ns. Its low R_DS(on) and fast switching enable efficient replacement of Schottky diodes in secondary-side rectification. The PSMN008-75P's diode characteristics are fully characterized in Table 6 and Figure 13, making it suitable for high-frequency forward and LLC resonant converters.