NXP Semiconductors PSMN009-100W,127

Overview

PSMN009-100W from NXP Semiconductors (formerly Philips Semiconductors) is an N-channel TrenchMOS™ power MOSFET in TO-247 (SOT429) package, designed for high-current switching in d.c.-to-d.c. converters and switched-mode power supplies. It delivers 100 A continuous drain current at 25 °C, 9 mΩ maximum R_DS(ON) at V_GS = 10 V, and 100 V drain-source breakdown voltage.

For engineers reviewing the PSMN009-100W datasheet, PSMN009-100W pinout, PSMN009-100W application, or PSMN009-100W equivalent, key selection criteria include thermal resistance (R_{th j-mb} = 0.5 K/W), avalanche energy rating (E_AS = 650 mJ), gate charge profile (Q_g(tot) = 214 nC), and body diode performance (V_SD = 0.82 V at 25 A).

Technical Context

This device employs Philips' proprietary TrenchMOS™ technology to minimize on-state resistance while maintaining robust avalanche capability and fast switching dynamics. Its low R_DS(ON) and optimized gate charge (Q_gs = 45 nC, Q_gd = 91 nC) support high-efficiency hard-switched topologies.

The integrated source inductance (L_s = 7.5 nH) and drain inductance (L_d = 4.5 nH) are characterized per lead-to-die measurement, enabling accurate layout-dependent switching loss estimation. The body diode exhibits t_rr = 100 ns and Q_rr = 0.5 µC under specified conditions, supporting synchronous rectification and freewheeling roles.

Key Specifications

Pinout & Package

PSMN009-100W is housed in a plastic single-ended through-hole SOT429 (TO-247) package with tab-connected drain and isolated gate/source leads. Mounting base (tab) serves as primary thermal path and electrical connection to drain.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP100NF10 and IRFP4668, the PSMN009-100W offers superior balance of ultra-low R_DS(ON), industry-leading thermal resistance, and highest documented avalanche energy - making it optimal for high-reliability, high-current industrial and telecom power stages where thermal headroom and transient robustness are prioritized.

Availability

PSMN009-100W is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, telecom rectifiers, and EV onboard charger PFC stages requiring stable component supply and long-term manufacturability.

Supply support for PSMN009-100W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company formed from the spin-off of Philips' semiconductor division, specializing in high-performance analog, logic, and power devices for industrial, automotive, and communications markets.

The PSMN009-100W belongs to NXP's SiliconMAX™ TrenchMOS™ family, engineered specifically for high-current, high-efficiency switching in industrial-grade power conversion systems where thermal performance and ruggedness are mission-critical.

FAQ

What is the maximum continuous drain current rating for the PSMN009-100W at 100 °C mounting base temperature?

The PSMN009-100W supports 79 A continuous drain current at T_mb = 100 °C, as specified in its limiting values table. This derating reflects thermal constraints of the TO-247 package and must be accounted for in thermal design. At 25 °C mounting base, the rating is 100 A. The PSMN009-100W datasheet provides normalized derating curves (Fig.2) to interpolate values across the full -55 °C to 175 °C junction temperature range.

Does the PSMN009-100W have a built-in body diode, and what are its key characteristics?

Yes, the PSMN009-100W integrates a parasitic body diode inherent to its vertical N-channel MOSFET structure. Key specifications include: forward voltage V_SD = 0.82 V at 25 A and 0.95 V at 75 A (T_j = 25 °C), reverse recovery time t_rr = 100 ns, and reverse recovery charge Q_rr = 0.5 µC under defined test conditions. These parameters are confirmed in the "Reverse Diode Limiting Values and Characteristics" section of the PSMN009-100W datasheet.

What is the gate threshold voltage range for the PSMN009-100W, and how does it vary with temperature?

The PSMN009-100W has a gate threshold voltage V_GS(th) ranging from 2.0 V to 4.0 V at T_j = 25 °C, and from 1.0 V to 6.0 V across the full operating junction temperature range (-55 °C to 175 °C). This wide variation is documented in the electrical characteristics table and Fig.10 of the PSMN009-100W datasheet, indicating that gate drive design must ensure sufficient overdrive margin across temperature extremes.

Can the PSMN009-100W be used in avalanche mode, and what is its rated non-repetitive avalanche energy?

Yes, the PSMN009-100W is rated for non-repetitive avalanche operation with E_AS = 650 mJ under specified conditions: unclamped inductive load, I_AS = 100 A, t_p = 100 µs, V_DD ≤ 50 V, R_GS = 50 Ω, and V_GS = 5 V. This value is explicitly listed in the "Avalanche Energy Limiting Values" table of the PSMN009-100W product specification and validated per IEC 134 standards.

What is the thermal resistance from junction to mounting base (R_{th j-mb}) for the PSMN009-100W, and why is this parameter critical?

The PSMN009-100W has a maximum R_{th j-mb} of 0.5 K/W, measured from silicon junction to the metal mounting base (drain tab). This low value is critical because it directly determines how efficiently heat transfers from the die to the heatsink - enabling >250 W power dissipation with modest thermal gradients. It is a defining advantage of the PSMN009-100W versus alternatives and is verified in the "Thermal Resistances" section of the PSMN009-100W datasheet.