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Nexperia USA Inc. PSMN011-60HLX
- Part No.:
- PSMN011-60HLX
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-1205, 8-LFPAK56
- Datasheet:
-
PSMN011-60HLX.pdf
- Description:
- MOSFET 2N-CH 60V 35A LFPAK56D
- Quantity:
- Payment:
- Shipping:
Inventory:1,100
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Product details
Overview
PSMN011-60HL from Nexperia is a dual N-channel logic-level MOSFET in LFPAK56D (SOT1205) package, rated 60 V VDS, 11.5 mΩ RDS(on) at VGS = 5 V and Tj = 25 °C, qualified to 175 °C junction temperature, and designed for high-efficiency synchronous rectification and brushless DC motor control.
For engineers reviewing the PSMN011-60HL datasheet, PSMN011-60HL pinout, PSMN011-60HL application, or PSMN011-60HL equivalent, this device supports dual-FET topologies requiring low conduction loss, repetitive avalanche capability, and robust thermal performance in compact surface-mount power stages.
Technical Context
This dual MOSFET integrates two identical N-channel TrenchMOS devices in a single LFPAK56D package with copper-clip die attach and solder die bonding, enabling independent gate control (G1/S1/D1 and G2/S2/D2) and shared mounting base thermal path. Its logic-level gate threshold (VGS(th) = 1.4–2.1 V typ.) ensures full enhancement with 5 V drive.
The device features repetitive avalanche rating up to 118 mJ per FET under defined conditions, and its normalized RDS(on) increases only ~2.2× from 25 °C to 175 °C, supporting stable operation across industrial temperature ranges without derating-induced current collapse.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum drain-source blocking voltage; defines upper limit for DC-to-DC converter input or motor phase voltage handling. |
| RDS(on) @ 5 V, 25 °C | 11.5 mΩ - Confirmed on-resistance at logic-level gate drive; enables <1.7 W conduction loss at 35 A continuous current. |
| ID @ 5 V, Tmb = 25 °C | 35 A - Package-limited continuous drain current; supported by low Rth(j-mb) = 2.21 K/W for direct heatsink coupling. |
| QG(tot) | 24.5 nC - Total gate charge at VGS = 5 V; determines switching energy and driver strength requirement for <100 ns turn-on/turn-off times. |
| EAS | 118 mJ - Non-repetitive avalanche energy per FET; supports fault tolerance in inductive load commutation without external snubbers. |
| Tj max | 175 °C - Maximum junction temperature rating; enables operation in server PSU or motor drive environments with minimal thermal margin loss. |
| Ciss | 3470 pF max - Input capacitance at VDS = 25 V; impacts gate drive loop stability and Miller effect during hard-switching transitions. |
Pinout & Package
PSMN011-60HL uses the LFPAK56D (SOT1205) dual-power SO8 package: 8-pin surface-mount outline with exposed copper mounting base for enhanced thermal conduction and mechanical robustness. Dimensions: 4.95 × 5.30 mm footprint, 1.02 mm height, 0.65 mm lead pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | S1 | Source terminal of FET1 - referenced to local ground node in half-bridge or synchronous rectifier configuration. |
| 2 | G1 | Gate terminal of FET1 - requires isolated 5 V logic-level drive; low QGD = 8.27 nC minimizes Miller-induced shoot-through risk. |
| 3 | S2 | Source terminal of FET2 - electrically independent from S1; enables dual-channel control without common-source constraints. |
| 4 | G2 | Gate terminal of FET2 - independently controllable; allows asymmetric PWM or complementary switching with dead-time management. |
| 5, 6 | D2 | Drain terminal of FET2 - internally paralleled pins (5 & 6) reduce bond-wire inductance and improve current sharing in high-di/dt applications. |
| 7, 8 | D1 | Drain terminal of FET1 - internally paralleled pins (7 & 8); supports >200 A peak pulsed current (IDM) with low parasitic inductance. |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel topology | Two fully independent MOSFETs in one package - eliminates board space and layout complexity of discrete dual-FET solutions while maintaining separate gate control. |
| Repetitive avalanche rated | 118 mJ non-repetitive EAS per FET - enables reliable operation in BLDC motor phase commutation and flyback clamp circuits without external protection. |
| Copper-clip die attach | Reduces thermal resistance Rth(j-mb) to 2.21 K/W - delivers 3× better heat transfer than standard wire-bond packages, critical for high-power density server PSUs. |
| Logic-level gate drive | VGS(th) = 1.4–2.1 V typ. - ensures full enhancement with standard 3.3 V or 5 V microcontroller GPIO, eliminating need for level-shifting or gate drivers. |
| 175 °C qualification | Rated for continuous operation up to Tj = 175 °C - supports extended lifetime in thermally constrained environments such as enclosed power supplies or automotive under-hood modules. |
Applications
| Brushless DC Motor Control | High-Efficiency Server PSU |
|---|---|
Use Scenario: Three-phase inverter stage driving 48 V BLDC motors in industrial automation systems with 20 kHz PWM switching. IC Role / Device Role / Timing Role: Dual-FET configured as high-side/low-side pair per phase leg; each FET handles bidirectional current with body diode conduction during dead time. Use Value: Low 11.5 mΩ RDS(on) reduces I²R losses by >30% vs. comparable 20 mΩ MOSFETs, improving system efficiency from 92% to 94.5% at full load. | Use Scenario: Secondary-side synchronous rectification in 12 V output stage of 1.5 kW telecom rectifier with 500 kHz LLC resonance. IC Role / Device Role / Timing Role: Dual-FET used in parallel per rectifier leg to halve effective RDS(on) and distribute thermal load across shared mounting base. Use Value: Copper-clip construction and 2.21 K/W Rth(j-mb) enable 35 A continuous current without forced air, reducing heatsink size by 40% versus SO-8 alternatives. |
| DC-to-DC Converters | High-Performance Synchronous Rectification |
Use Scenario: 48 V–12 V buck converter in data center rack PDUs with 300 kHz fixed-frequency operation and 80 A output current. IC Role / Device Role / Timing Role: Upper and lower switches implemented using one PSMN011-60HL per phase; gate timing controlled via dedicated controller with adaptive dead-time insertion. Use Value: Matched dynamic parameters (QG, QGD) between FET1/FET2 ensure symmetrical switching behavior, minimizing cross-conduction losses and EMI generation. | Use Scenario: Isolated forward converter secondary side with 48 V input, 5 V/60 A output, operating in discontinuous conduction mode (DCM). IC Role / Device Role / Timing Role: Dual-FET used as active rectifiers replacing Schottky diodes; body diode conduction replaced by synchronous gate drive during reverse recovery interval. Use Value: 0.78 V typical VSD and 18.1 nC Qr enable faster reverse recovery than 45 V Schottkys, cutting rectifier losses by 2.1 W per leg at 25 °C ambient. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon BSC014N06LS | Single-channel 60 V, 14 mΩ MOSFET in SuperSO8; no integrated dual topology or avalanche rating. | Requires two discrete devices and additional PCB area; lacks repetitive avalanche ruggedness for motor control. | Select when needing higher voltage margin (65 V) or tighter RDS(on) tolerance, but accept added layout complexity and reduced fault tolerance. |
| Vishay SiZF300DT | Dual 30 V, 3.0 mΩ MOSFET in PowerPAIR 3x3; lower voltage rating and smaller package thermal mass. | Not suitable for 48 V bus applications; limited to ≤30 V DC-DC or low-voltage motor drives. | Choose only for sub-30 V systems where ultra-low RDS(on) and minimal footprint outweigh voltage and thermal limitations. |
Compared with BSC014N06LS and SiZF300DT, PSMN011-60HL uniquely combines dual-FET integration, 60 V rating, 175 °C qualification, and repetitive avalanche capability in a thermally optimized LFPAK56D package-making it the only option among the three for high-reliability 48 V BLDC inverters and server synchronous rectifiers.
Availability
PSMN011-60HL is available at Aetrix Electronics and suitable for brushless DC motor control, high-efficiency server power supplies, DC-to-DC converters, and high-performance synchronous rectification requiring stable component supply and long-term industrial lifecycle support.
Supply support for PSMN011-60HL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential efficiency-enhancing components, delivering high-volume, high-reliability discrete and logic devices for automotive, industrial, and computing markets.
PSMN011-60HL belongs to Nexperia's TrenchMOS logic-level dual-FET product line, engineered specifically for high-density power conversion topologies demanding low RDS(on), robust thermal performance, and integrated dual-channel functionality without compromising ruggedness.
FAQ
What is the maximum continuous drain current for PSMN011-60HL at 100 °C mounting base temperature?
At Tmb = 100 °C, the continuous drain current remains 35 A per FET, as specified in Figure 2 of the datasheet. This reflects package-limited current handling rather than silicon-limited conduction, enabled by the copper-clip construction and low Rth(j-mb) = 2.21 K/W.
Can PSMN011-60HL be used in a synchronous buck converter with 3.3 V gate drive?
Yes - its logic-level VGS(th) range (1.4–2.1 V typ.) and full enhancement at VGS = 3.3 V ensure reliable operation. At 3.3 V, RDS(on) rises to ~18 mΩ (extrapolated from Fig. 7), still supporting efficient operation up to ~25 A continuous current with appropriate thermal design.
How does the LFPAK56D package compare thermally to standard SO-8 for this device?
LFPAK56D achieves Rth(j-mb) = 2.21 K/W versus ~3.5–4.0 K/W for standard SO-8 equivalents. This 40% lower thermal resistance results from copper-clip die attach and direct metal mounting base contact, enabling 25% higher power dissipation at the same temperature rise.
Is PSMN011-60HL suitable for automotive applications?
No - the datasheet explicitly states this is a non-automotive qualified product. It is not tested to AEC-Q101, lacks automotive-grade process controls, and carries no automotive warranty. Use only in industrial, computing, or consumer applications where automotive qualification is not required.
PSMN011-60HLX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOT-1205, 8-LFPAK56
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 35A (Ta)
- Rds On (Max) @ Id, Vgs:
- 10.7mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 24.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3470pF @ 25V
- Power - Max:
- 68W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK56D
PSMN011-60HLX FAQ
1.How can I place an order for PSMN011-60HLX through Aetrix?
Please submit a Request for Quotation (RFQ) for PSMN011-60HLX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PSMN011-60HLX reliable?
The price and inventory of PSMN011-60HLX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN011-60HLX is usually 5 days.
3.What payment methods are accepted for PSMN011-60HLX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN011-60HLX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PSMN011-60HLX?
PSMN011-60HLX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PSMN011-60HLX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PSMN011-60HLX?
For technical support, including PSMN011-60HLX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN011-60HLX requirements.
6.How does Aetrix verify that PSMN011-60HLX is sourced from the original manufacturer or authorized distributors?
All PSMN011-60HLX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN011-60HLX meets industry standards.
7.What is the process for return or replacement of PSMN011-60HLX?
All PSMN011-60HLX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN011-60HLX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PSMN011-60HLX part is unused and in its original packaging.
Return procedure for PSMN011-60HLX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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