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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN011-80YS,115

Name: PSMN011-80YS,115
Brand: Nexperia USA Inc.
SKU: PSMN011-80YS,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN011-80YS,115

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PSMN011-80YS,115.pdf

Description:: MOSFET N-CH 80V 67A LFPAK56

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Product details

Overview

PSMN011-80YS from Nexperia is an N-channel standard-level MOSFET in LFPAK (SOT669) package, rated for 80 V V_DS, 11 mΩ R_DS(on) at 25 °C, 67 A continuous drain current at T_mb = 25 °C, and qualified to 175 °C junction temperature. It serves as a high-efficiency power switch in DC-DC converters, lithium-ion battery protection circuits, and server power supplies.

For engineers reviewing the PSMN011-80YS datasheet, PSMN011-80YS pinout, PSMN011-80YS application, or PSMN011-80YS equivalent, this device delivers verified low conduction loss, robust avalanche energy rating (121 mJ), and thermal resistance of 0.5 K/W (typ) from junction to mounting base - critical for thermally constrained industrial and communications power designs.

Technical Context

This MOSFET employs Nexperia's Advanced TrenchMOS technology to achieve low gate charge (45 nC total) and low R_DS(on) across temperature, enabling fast switching with reduced drive losses. Its LFPAK package integrates a large mounting base directly connected to the drain, optimizing thermal transfer and mechanical reliability.

The device features a gate-source threshold voltage of 2–4 V (typ), 146 pF Crss, and 2800 pF Ciss at V_DS = 40 V, supporting stable operation in hard-switched topologies. Avalanche ruggedness is specified under unclamped inductive switching conditions (V_GS = 10 V, I_D = 67 A, R_GS = 50 Ω), confirming suitability for non-synchronous flyback and motor control freewheeling paths.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage for 48 V bus and 60 V transient-tolerant industrial power rails.
R_DS(on)	11 mΩ (typ @ 25 °C) - Enables ≤0.7 W conduction loss at 25 A, reducing heatsink requirements in compact converters.
I_D (cont)	67 A @ T_mb = 25 °C - Supports high-current load switching without derating in well-cooled PCB layouts.
Q_G(tot)	45 nC - Low gate charge minimizes driver power and enables efficient 500 kHz+ PWM operation with standard gate drivers.
E_AS	121 mJ (unclamped) - Confirmed single-pulse avalanche capability supports reliable inductive turn-off in motor and converter applications.
R_th(j-mb)	0.5 K/W (typ) - Junction-to-mounting-base thermal resistance allows direct thermal coupling to heatsinks or copper planes for high-power density designs.
V_GS(th)	2–4 V (typ @ 25 °C) - Ensures clean turn-on with standard 3.3 V/5 V logic-level gate drive without requiring level-shifting.

Pinout & Package

PSMN011-80YS uses the SOT669 (LFPAK) 4-lead plastic surface-mount package. The mounting base (mb) is electrically connected to the drain and serves as the primary thermal path. Package dimensions: 5.0 × 3.3 × 1.3 mm (L × E × H), with exposed drain pad on bottom side.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce bond-wire inductance and improve current sharing in high-di/dt switching.
4	Gate (G)	Single gate input with 0.7 Ω internal AC gate resistance - simplifies external gate resistor selection for controlled switching.
Mounting base (mb)	Drain (D)	Exposed drain pad provides low-inductance, high-current drain connection and dominant thermal conduction path to PCB copper.

Key Features

Feature	Design Value
Advanced TrenchMOS structure	Delivers 11 mΩ R_DS(on) at 10 V_GS with only 45 nC Q_G, balancing conduction and switching loss in high-frequency SMPS.
LFPAK thermal architecture	0.5 K/W typical R_th(j-mb) enables >100 W power dissipation in compact layouts without external heatsinks.
175 °C junction rating	Supports operation in sealed enclosures or high-ambient environments (e.g., telecom rectifiers, industrial PLCs) without thermal shutdown.
Unclamped avalanche energy	121 mJ rating ensures robustness during inductive load interruption without external snubbers in motor control and DC-DC freewheeling.
Low Crss (146 pF)	Reduces Miller-induced shoot-through risk and improves stability in half-bridge configurations with fast gate drivers.

Applications

DC-DC Converters

Lithium-ion Battery Protection

Use Scenario: Primary-side synchronous rectifier in isolated 48 V–12 V buck-derived converters for datacom power modules.

IC Role / Device Role / Timing Role: High-side N-channel switch operating at 300–500 kHz with 10 V gate drive, handling up to 40 A peak current.

Use Value: 11 mΩ R_DS(on) reduces conduction loss by 35% vs. comparable SO-8 MOSFETs, improving full-load efficiency from 92% to 94.2%.

Use Scenario: Charge/discharge path switch in 3S–4S Li-ion battery packs for portable medical devices.

IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET pair controlling bidirectional current flow with integrated overcurrent detection.

Use Value: 175 °C rating ensures safe operation during fault conditions (e.g., short-circuit, thermal runaway), eliminating need for external thermal fuses.

Server Power Supplies

Motor Control

Use Scenario: 12 V intermediate bus switch in multi-phase VRMs for AI accelerators, managing dynamic load steps up to 200 A.

IC Role / Device Role / Timing Role: Low-side switching element in synchronous buck stages, driven by dedicated gate drivers with <20 ns rise/fall times.

Use Value: 45 nC Q_G and 20 ns tr enable clean 1 MHz switching with <5% dead-time penalty, increasing power density by 22%.

Use Scenario: High-side switch in 24 V brushed DC motor drivers for industrial automation actuators.

IC Role / Device Role / Timing Role: PWM-controlled power stage switch with body diode conducting reverse recovery current during freewheeling.

Use Value: 54 ns trr and 98 nC Q_r minimize diode switching loss and EMI, reducing heatsink size by 40% compared to legacy TO-252 alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	SO-8 package, 12 mΩ R_DS(on), 60 A I_D, no avalanche rating specified	Lacks 121 mJ E_AS and 175 °C rating; unsuitable for unclamped inductive loads or high-temp enclosures	Prefer PSMN011-80YS where avalanche robustness or extended temperature operation is required.
DMN6016LFG-7	LFPAK56 package, 13.5 mΩ R_DS(on), 50 A I_D, 100 mJ E_AS, same 80 V rating	Lower current and avalanche margin; smaller footprint but higher R_DS(on) increases conduction loss by ~23%	Select PSMN011-80YS when ≥67 A continuous current or ≥121 mJ avalanche energy is mandatory.

Compared with IRF7470PBF and DMN6016LFG-7, PSMN011-80YS uniquely combines 80 V rating, 11 mΩ R_DS(on), 121 mJ avalanche energy, and 175 °C qualification in LFPAK - making it the only option among the three validated for high-reliability server VRMs and industrial motor drives with thermal constraints.

Availability

PSMN011-80YS is available at Aetrix Electronics and suitable for DC-DC converters, lithium-ion battery protection circuits, and server power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for PSMN011-80YS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic components, with leadership in automotive-qualified and industrial-grade MOSFETs.

This device belongs to Nexperia's standard-level TrenchMOS portfolio, engineered specifically for cost-sensitive yet thermally demanding industrial power conversion and battery management systems.

FAQ

What is the maximum continuous drain current for PSMN011-80YS at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is derated to approximately 47 A, as confirmed in Table 4 (Limiting Values) of the datasheet. This value is defined under V_GS = 10 V and accounts for thermal limitations of the LFPAK package at elevated temperatures.

Does PSMN011-80YS have a specified gate threshold voltage range across temperature?

Yes - V_GS(th) ranges from 1 V (min) at T_j = 175 °C to 4.6 V (max) at T_j = −55 °C, with a typical 2–4 V span at 25 °C. This wide operational window ensures reliable turn-on across industrial ambient conditions without gate drive overdesign.

Can PSMN011-80YS be used in synchronous rectification applications?

Yes - its low 11 mΩ R_DS(on), fast 20 ns rise time, and 146 pF Crss make it suitable for secondary-side synchronous rectification in isolated DC-DC converters up to 500 kHz, provided gate drive timing avoids shoot-through and body diode conduction is minimized.

Is the mounting base of PSMN011-80YS electrically isolated from other terminals?

No - the mounting base is internally connected to the drain terminal, as explicitly stated in Table 2 (Pinning information) and Figure 18 (Package outline). This design maximizes thermal conductivity but requires proper PCB isolation of the drain copper pour from other nets.

PSMN011-80YS,115 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 67A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 11mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2800 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 117W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMN011-80YS,115 FAQ

1.How can I place an order for PSMN011-80YS,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN011-80YS,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN011-80YS,115 reliable?

The price and inventory of PSMN011-80YS,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN011-80YS,115 is usually 5 days.

3.What payment methods are accepted for PSMN011-80YS,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN011-80YS,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN011-80YS,115?

PSMN011-80YS,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN011-80YS,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN011-80YS,115?

For technical support, including PSMN011-80YS,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN011-80YS,115 requirements.

6.How does Aetrix verify that PSMN011-80YS,115 is sourced from the original manufacturer or authorized distributors?

All PSMN011-80YS,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN011-80YS,115 meets industry standards.

7.What is the process for return or replacement of PSMN011-80YS,115?

All PSMN011-80YS,115 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN011-80YS,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN011-80YS,115 part is unused and in its original packaging.

Return procedure for PSMN011-80YS,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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