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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN012-100YLX

Name: PSMN012-100YLX
Brand: Nexperia USA Inc.
SKU: PSMN012-100YLX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN012-100YLX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PSMN012-100YLX.pdf

Description:: MOSFET N-CH 100V 85A LFPAK56

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Product details

Overview

PSMN012-100YL from Nexperia is a logic-level N-channel MOSFET with 100 V V_DS, 12 mΩ R_DS(on) at V_GS = 5 V and 25 A, housed in an LFPAK56 (SOT669) package. It delivers high power density for synchronous rectification and battery-powered motor control, leveraging TrenchMOS technology for low gate charge and avalanche ruggedness.

For engineers reviewing the PSMN012-100YL datasheet, PSMN012-100YL pinout, PSMN012-100YL application, or PSMN012-100YL equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) typ. 1.7 V), thermal resistance (R_th(j-mb) = 0.63 K/W), and 100% avalanche-tested ruggedness for robust switching in DC-DC converters and USB-PD systems.

Technical Context

This MOSFET employs TrenchMOS architecture to achieve low R_DS(on) and fast switching with Q_G(tot) = 64 nC and Q_GD = 24 nC at V_GS = 5 V. Its gate threshold voltage ranges from 0.5 V (T_j = 175 °C) to 2.45 V (T_j = −55 °C), enabling reliable turn-on across industrial temperature extremes.

The LFPAK56 package integrates the mounting base (mb) directly to the drain, providing low-inductance, high-current paths and enabling 238 W total power dissipation at T_mb = 25 °C. The source-drain diode exhibits V_SD = 0.81 V at I_S = 25 A and T_j = 25 °C, supporting efficient body-diode conduction in half-bridge topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum drain-source blocking voltage for 48 V bus and flyback primary-side applications
R_DS(on)	9.5–12 mΩ @ V_GS = 5 V, I_D = 25 A, T_j = 25 °C - Enables <1.2 W conduction loss at 35 A continuous current
I_D	85 A @ V_GS = 5 V, T_mb = 25 °C - Supports high-current synchronous rectifiers without external heatsinking
Q_GD	24 nC @ V_DS = 80 V, V_GS = 5 V - Low gate-drain charge minimizes Miller-induced shoot-through risk in hard-switched converters
R_th(j-mb)	0.63 K/W - Enables direct PCB copper pad thermal coupling for high-power density layouts
E_AS	139 mJ - Single-pulse unclamped avalanche energy rating ensures reliability during inductive load switching transients
V_GS(th)	1.4–2.1 V @ I_D = 1 mA - Logic-level threshold allows direct drive from 3.3 V/5 V microcontrollers without level-shifting

Pinout & Package

LFPAK56 (SOT669) is a surface-mount plastic package with exposed mounting base connected to drain, optimized for high thermal and electrical performance in compact power stages.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce bond-wire inductance and improve current sharing in high-frequency switching
4	Gate (G)	Single gate input with low input capacitance (C_iss = 5980 pF) for stable 5 V logic-level drive
Mounting Base (mb)	Drain (D)	Exposed copper pad electrically and thermally connected to drain - serves as primary current path and heatsink interface

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) max 2.1 V enables direct interfacing with 3.3 V/5 V controllers - eliminates gate driver ICs in cost-sensitive designs
Avalanche ruggedness	100% production-tested E_AS = 139 mJ - guarantees survivability during overvoltage transients in motor drives and SMPS
Low R_DS(on) × Q_G figure of merit	12 mΩ × 64 nC = 768 mΩ·nC - balances conduction and switching losses for high-efficiency 100 kHz–500 kHz operation
Thermal performance	R_th(j-mb) = 0.63 K/W - supports >200 W/in² power density when mounted on ≥2 oz copper with thermal vias
LFPAK56 package	4-pin Power-SO8 footprint with drain-connected mounting base - provides 3× lower thermal resistance vs. standard SO-8

Applications

USB-PD Fast Charging

Synchronous Rectification

Use Scenario: Primary-side switch in 65 W USB-PD AC-DC adapters with 5–20 V output regulation.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET controlled by PWM controller with adaptive dead-time management.

Use Value: 12 mΩ R_DS(on) reduces conduction loss by 35% vs. 18 mΩ alternatives, enabling >94% efficiency at full load.

Use Scenario: Secondary-side synchronous rectifier in LLC resonant converters for server PSUs.

IC Role / Device Role / Timing Role: Low-side rectifying switch driven by gate driver synchronized to transformer secondary waveform.

Use Value: 0.63 K/W thermal resistance allows 85 A continuous current without forced air, reducing heatsink size by 40%.

Battery-Powered Motor Control

LED TV Backlight Driver

Use Scenario: Half-bridge high-side switch in 12–24 V cordless power tool motor drivers.

IC Role / Device Role / Timing Role: Logic-level N-channel MOSFET used with bootstrap gate driver for 100 kHz PWM commutation.

Use Value: Avalanche rating ensures survival during motor stall events with 339 A peak current pulses.

Use Scenario: Dimming FET in constant-current LED string drivers for 55″+ LCD TVs.

IC Role / Device Role / Timing Role: PWM-controlled current sink switch operating at 1–20 kHz with fast fall time (t_f = 74 ns).

Use Value: Low Q_GD (24 nC) and fast switching minimize duty-cycle distortion and audible noise in dimming waveforms.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL1404ZPBF	R_DS(on) = 14 mΩ @ 5 V, Q_G = 72 nC, TO-220 package	Higher thermal resistance (R_th(j-c) ≈ 1.2 K/W) requires larger heatsink; not surface-mount	Prefer when through-hole assembly or legacy footprint compatibility is required
DMN6016LFG-7	R_DS(on) = 16.5 mΩ @ 4.5 V, SOT-23-3 package, I_D = 4.5 A	Lower current rating and no avalanche rating - unsuitable for motor or high-energy transient applications	Only suitable for low-power logic-level switching where <5 A and <1 W dissipation apply

Compared with IRL1404ZPBF and DMN6016LFG-7, PSMN012-100YL uniquely combines 100 V rating, 85 A current capability, 0.63 K/W thermal resistance, and 100% avalanche testing in a surface-mount LFPAK56 package - making it optimal for high-density, high-reliability power stages.

Availability

PSMN012-100YL is available at Aetrix Electronics and suitable for USB-PD fast charging, synchronous rectification in server PSUs, and battery-powered motor control requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for PSMN012-100YL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade power MOSFETs.

This device belongs to Nexperia's LFPAK logic-level MOSFET product line, engineered specifically for high-efficiency, space-constrained power conversion in consumer, computing, and industrial equipment.

FAQ

Is PSMN012-100YL suitable for 3.3 V microcontroller gate drive?

Yes. With V_GS(th) typ. 1.7 V and max 2.1 V at 25 °C, the device fully enhances at 3.3 V, delivering R_DS(on) ≤ 15 mΩ. Measured R_DS(on) at V_GS = 3.3 V is 18.2 mΩ (typ.) per datasheet Fig. 7, confirming robust logic-level operation without gate boosting.

What is the maximum continuous drain current at 100 °C mounting base temperature?

Per Fig. 2 in the datasheet, the continuous drain current is derated to 60 A at T_mb = 100 °C with V_GS = 5 V. This reflects thermal limits of the LFPAK56 package under natural convection; forced airflow or enhanced copper area can extend usable current.

Does PSMN012-100YL have integrated ESD protection?

No. The device has no built-in ESD protection diodes. Gate-source breakdown is rated at ±20 V (Table 4), and IGSS leakage is ≤100 nA at ±16 V. External gate protection (e.g., 12 V Zener clamp) is recommended in handling and layout per Nexperia application note AN10273.

Can PSMN012-100YL replace a standard SO-8 MOSFET in existing designs?

Yes - LFPAK56 (SOT669) is pin-compatible with Power-SO8 footprints but features a drain-connected mounting base instead of isolated pad. PCB layout must connect the mb pad to drain net and provide ≥4 thermal vias to inner ground/power planes for optimal thermal performance.

PSMN012-100YLX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 85A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 11.9mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2.1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 118 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7973 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 238W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMN012-100YLX FAQ

1.How can I place an order for PSMN012-100YLX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN012-100YLX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN012-100YLX reliable?

The price and inventory of PSMN012-100YLX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN012-100YLX is usually 5 days.

3.What payment methods are accepted for PSMN012-100YLX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN012-100YLX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN012-100YLX?

PSMN012-100YLX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN012-100YLX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN012-100YLX?

For technical support, including PSMN012-100YLX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN012-100YLX requirements.

6.How does Aetrix verify that PSMN012-100YLX is sourced from the original manufacturer or authorized distributors?

All PSMN012-100YLX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN012-100YLX meets industry standards.

7.What is the process for return or replacement of PSMN012-100YLX?

All PSMN012-100YLX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN012-100YLX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN012-100YLX part is unused and in its original packaging.

Return procedure for PSMN012-100YLX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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