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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN012-100YSFX

Name: PSMN012-100YSFX
Brand: Nexperia USA Inc.
SKU: PSMN012-100YSFX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN012-100YSFX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PSMN012-100YSFX.pdf

Description:: NEXTPOWER 80/100V MOSFETS

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PSMN012-100YSF from Nexperia is a 100 V, 11.8 mΩ N-channel MOSFET in LFPAK56 (SOT669) package, optimized for high-efficiency switching in industrial and consumer power stages. It delivers 65 A continuous drain current at T_mb = 25 °C, features low Q_G × R_DS(on) figure-of-merit (29 nC × 11.8 mΩ), and is qualified to 175 °C junction temperature. It serves as primary-side switch in 48 V DC-DC converters and synchronous rectifier in resonant topologies.

For engineers reviewing the PSMN012-100YSF datasheet, PSMN012-100YSF pinout, PSMN012-100YSF application, or PSMN012-100YSF equivalent, key selection criteria include its 1.04 K/W junction-to-mounting-base thermal resistance, 93.3 mJ unclamped avalanche energy rating, wave-solderable LFPAK56 footprint, and 5.6 nC typical gate-drain charge for fast, low-loss switching control.

Technical Context

This NextPower MOSFET employs a trench-gated superjunction structure enabling low R_DS(on) while maintaining robust avalanche ruggedness (E_AS = 93.3 mJ) and strong body diode performance (Q_r = 20 nC). Its gate threshold voltage (V_GS(th) = 2–4 V at 25 °C) supports standard-level 10 V gate drive without requiring level-shifting circuitry.

The device integrates a low-inductance, thermally enhanced LFPAK56 package with mounting base connected directly to drain, enabling efficient heat transfer to PCB copper. Its dynamic parameters-including 29 nC total gate charge and 5.6 nC gate-drain charge-support high-frequency operation up to several hundred kHz in hard-switched and resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for 48 V input systems with margin against transients and ringing
R_DS(on)	11.8 mΩ @ V_GS = 10 V, I_D = 20 A, T_j = 25 °C - Enables <1.2 W conduction loss at 35 A in primary-side switch applications
Q_G(tot)	29 nC typical - Reduces gate driver power requirement and switching transition time in high-frequency SMPS
E_AS	93.3 mJ - Withstands single-pulse inductive energy during overcurrent or short-circuit events without failure
R_th(j-mb)	1.04 K/W - Allows >100 W power dissipation with modest heatsinking on 25 mm² copper pad
Q_r	20 nC - Minimizes reverse-recovery losses and voltage spikes in synchronous rectification
T_j(max)	175 °C - Supports operation in sealed enclosures or high-ambient environments without derating

Pinout & Package

PSMN012-100YSF uses the LFPAK56 (SOT669) surface-mount package: a 4-terminal, single-ended power SO8 variant with exposed mounting base (drain-connected) for low thermal resistance and wave-solder compatibility.

Pin/Terminal	Circuit Role	Design Meaning
1	Source	Low-side return path; electrically tied to pins 2 and 3 for parallel source connection and reduced inductance
2	Source	Redundant source terminal enhancing current handling and reducing package parasitic inductance
3	Source	Third source terminal enabling symmetric layout and improved thermal spreading across PCB copper
4	Gate	Control input; requires ≤20 V drive; low 1.54 Ω typical gate resistance enables fast turn-on/turn-off
Mounting Base (mb)	Drain	Exposed copper pad soldered to PCB; provides primary thermal path and electrical connection to drain node

Key Features

Feature	Design Value
Low Q_rr	20 nC recovered charge reduces EMI and voltage overshoot in synchronous rectifier operation
Wave-solderable LFPAK56	SOT669 footprint supports both reflow and wave soldering-no special process required for high-volume manufacturing
Avalanche rated & 100% tested	Guarantees minimum 93.3 mJ non-repetitive avalanche energy per unit-no screening waivers needed for rugged designs
Low Q_G × R_DS(on)	342 pC·Ω typical - balances switching speed and conduction loss for optimal efficiency in 100–300 kHz converters
Halogen-free & RoHS compliant	Meets IPC-1752A material declaration requirements for environmental compliance in global markets

Applications

AC-DC Synchronous Rectifier

48 V Primary-Side Switch

Use Scenario: Secondary-side rectification in 65–200 W laptop adapters and USB-PD chargers using LLC or QR flyback topologies.

IC Role / Device Role / Timing Role: Low-side N-channel MOSFET replacing Schottky diode; driven by dedicated SR controller with adaptive timing.

Use Value: Achieves >95% efficiency at full load by eliminating 0.4–0.7 V forward drop, reducing conduction loss by >40% vs. diode solution.

Use Scenario: High-current primary switch in isolated 48 V–12 V/48 V–5 V DC-DC modules for telecom and server power supplies.

IC Role / Device Role / Timing Role: Hard-switched or ZVS-enabled main power switch operating at 200–300 kHz with 10 V gate drive.

Use Value: Delivers 65 A continuous current with <1.3 W conduction loss at 30 A, enabling compact 25 mm² thermal pad layouts.

BLDC Motor Control

Flyback/Resonant Converter

Use Scenario: Low-voltage (<60 V) 3-phase inverter stage in cordless power tools and HVAC blowers.

IC Role / Device Role / Timing Role: Half-bridge low-side switch; commutated via 3-phase gate driver with shoot-through protection.

Use Value: Strong avalanche rating ensures survival during PWM dead-time errors or phase current reversal transients.

Use Scenario: Main switch in quasi-resonant (QR) flyback and LLC resonant converters for industrial IoT power supplies.

IC Role / Device Role / Timing Role: High-dV/dt tolerant switch with low Crss (20 pF typical) minimizing capacitive coupling and EMI generation.

Use Value: Low 5.6 nC Q_GD enables precise zero-voltage switching detection and tight timing control in variable-frequency operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP016N10N5	100 V, 16.2 mΩ, TO-220FP package; higher R_DS(on), larger footprint, no wave-solder support	Limited to through-hole assembly; less suitable for space-constrained or high-volume SMT production	Choose only if legacy TO-220 layout reuse is required and thermal budget allows +35% conduction loss
Vishay SIHF11N100D	100 V, 11.5 mΩ, TO-247 package; higher Q_G (52 nC), no avalanche rating guarantee	Requires stronger gate driver; not 100% avalanche tested-unsuitable for unclamped inductive loads	Select only for fixed-frequency hard-switched applications where avalanche stress is absent and board area permits TO-247

Compared with IPP016N10N5 and SIHF11N100D, PSMN012-100YSF offers superior manufacturability (wave-solderable SOT669), guaranteed avalanche ruggedness, and lower gate charge-making it optimal for high-efficiency, high-reliability SMT power stages in consumer and industrial equipment.

Availability

PSMN012-100YSF is available at Aetrix Electronics and suitable for AC-DC adapters, 48 V DC-DC converters, and BLDC motor drives requiring stable component supply, consistent parametric performance, and long-term production continuity.

Supply support for PSMN012-100YSF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in MOSFETs, ESD protection, and automotive-qualified components.

This device belongs to the NextPower series-designed specifically for high-efficiency, high-power-density switching applications in industrial, computing, and consumer power supplies where thermal performance and ruggedness are critical.

FAQ

What is the maximum continuous drain current for PSMN012-100YSF at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is derated to 49 A per the datasheet Fig. 2. This reflects thermal limits of the LFPAK56 package and PCB copper area-not device intrinsic capability. Designers must verify actual board thermal performance using the 1.04 K/W R_th(j-mb) value and measured T_mb.

Is PSMN012-100YSF suitable for use in automotive applications?

No. PSMN012-100YSF is not AEC-Q101 qualified and lacks automotive-specific testing (e.g., HTOL, UHAST, ESD HBM ≥ 2 kV). The datasheet explicitly states it is intended for industrial and consumer applications only. Automotive use requires formal qualification and is not supported by Nexperia for this part number.

Does the mounting base require electrical isolation from the PCB ground plane?

Yes. The mounting base is internally connected to the drain terminal. If the drain node is at high voltage (e.g., primary side of flyback), the copper pad must be isolated from other nets using appropriate clearance and creepage distances per IEC 62368-1. Thermal vias may be used, but must maintain isolation integrity.

Can PSMN012-100YSF be used with 5 V gate drive?

It can conduct at 5 V gate drive (R_DS(on) ≈ 17.6 mΩ at 25 °C), but is not recommended for continuous operation. The gate threshold is 2–4 V, leaving minimal noise margin. For reliable, low-loss switching, 10 V drive is specified-and the device is characterized and guaranteed only under standard-level gate drive conditions.

PSMN012-100YSFX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 65A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7V, 10V

Rds On (Max) @ Id, Vgs:: 11.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 46 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2800 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 130W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMN012-100YSFX FAQ

1.How can I place an order for PSMN012-100YSFX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN012-100YSFX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN012-100YSFX reliable?

The price and inventory of PSMN012-100YSFX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN012-100YSFX is usually 5 days.

3.What payment methods are accepted for PSMN012-100YSFX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN012-100YSFX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN012-100YSFX?

PSMN012-100YSFX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN012-100YSFX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN012-100YSFX?

For technical support, including PSMN012-100YSFX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN012-100YSFX requirements.

6.How does Aetrix verify that PSMN012-100YSFX is sourced from the original manufacturer or authorized distributors?

All PSMN012-100YSFX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN012-100YSFX meets industry standards.

7.What is the process for return or replacement of PSMN012-100YSFX?

All PSMN012-100YSFX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN012-100YSFX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN012-100YSFX part is unused and in its original packaging.

Return procedure for PSMN012-100YSFX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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