Nexperia USA Inc. PSMN012-60HLX

Overview

PSMN012-60HLX from Nexperia is a dual N-channel logic-level MOSFET in LFPAK56D (SOT1205) package, rated 60 V V_DS, 12.5 mΩ R_DS(on) @ V_GS = 5 V and T_j = 25 °C, with enhanced repetitive avalanche ruggedness (75.2 mJ) and qualified to 175 °C junction temperature - used in high-reliability motor control and synchronous rectification circuits.

For engineers reviewing the PSMN012-60HLX datasheet, PSMN012-60HLX pinout, PSMN012-60HLX application, or PSMN012-60HLX equivalent, this page delivers verified electrical specs, thermal performance data, dual-FET pin mapping, and real-world use context for brushed/BLDC motor drives and DC-DC converters.

Technical Context

This dual MOSFET integrates two identical N-channel TrenchMOS devices in a single copper-clip LFPAK56D package, enabling independent gate control (G1/G2) and shared mounting base thermal path. Each FET supports 40 A continuous drain current at T_mb = 25 °C and exhibits low Q_G(tot) = 22.4 nC and Q_GD = 7.9 nC for fast switching.

Its avalanche capability is validated for both single-pulse (82 mJ) and repetitive operation (75.2 mJ), with R_DS(on) drift limited to ≤50% after 10⁹ cycles - enabled by application-specific silicon and solder die attach qualified to 175 °C.

Key Specifications

Pinout & Package

LFPAK56D (SOT1205) is a dual-power SO8 variant with copper-clip construction, 4.45 mm × 5.30 mm footprint, 1.02 mm height, and exposed mounting base for direct thermal coupling to PCB copper.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with BSC014N06LS and SiZ340DT, PSMN012-60HLX uniquely combines dual-FET integration, 175 °C rating, and validated 1 Bn-cycle repetitive avalanche - reducing component count and enabling simpler, more robust motor and power stage designs without external protection.

Availability

PSMN012-60HLX is available at Aetrix Electronics and suitable for brushed/BLDC motor control, high-efficiency DC-DC conversion, and synchronous rectification applications requiring stable component supply, long-term industrial lifecycle support, and guaranteed traceable sourcing.

Supply support for PSMN012-60HLX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in MOSFETs, ESD protection, and analog portfolio.

The PSMN012-60HLX belongs to Nexperia's ASFET (Application Specific Field-Effect Transistor) series, engineered specifically for ruggedized motor control and power conversion where repetitive avalanche endurance and thermal stability are mission-critical.

FAQ

What is the maximum continuous drain current for each FET at 100 °C mounting base temperature?

Each FET supports 33 A continuous drain current at T_mb = 100 °C, as specified in Table 5 (Limiting Values) and confirmed in Figure 2. This derating reflects thermal limits of the LFPAK56D package and maintains R_th(j-mb) = 2.36 K/W performance without forced cooling.

Can PSMN012-60HLX be used in a half-bridge configuration with shared source connection?

No - pins S1 and S2 are electrically isolated; they cannot be shorted to form a common source. The device is designed for independent dual-switch operation (e.g., two low-side switches or two high-side switches), not half-bridge topology requiring shared source or drain nodes.

Is the 12.5 mΩ R_DS(on) value guaranteed over temperature?

No - 12.5 mΩ is the typical value at T_j = 25 °C. At 175 °C, R_DS(on) rises to 28.3 mΩ max (Table 1), and Figure 15 shows normalized increase of ~2.2×. Design must use the 28.3 mΩ value for worst-case conduction loss calculation.

Does the device include integrated body diodes, and what is their reverse recovery performance?

Yes - each FET has an inherent body diode. Measured Q_r = 18.9 nC and t_rr = 22.7 ns at I_S = 10 A, dI_S/dt = −100 A/µs, confirming fast, soft recovery suitable for synchronous rectification without significant voltage overshoot.