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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN012-60MSX

Name: PSMN012-60MSX
Brand: Nexperia USA Inc.
SKU: PSMN012-60MSX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN012-60MSX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SOT-1210, 8-LFPAK33 (5-Lead)

Datasheet:: PSMN012-60MSX.pdf

Description:: MOSFET N-CH 60V 53A LFPAK33

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Product details

Overview

PSMN012-60MSX from Nexperia is a standard-level N-channel enhancement-mode MOSFET in LFPAK33 (SOT1210) package, rated for 60 V V_DS, 12 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and qualified to 175 °C junction temperature. It delivers 53 A continuous drain current at T_mb = 25 °C and supports high-efficiency motor control and industrial power switching with low conduction and switching losses.

For engineers reviewing the PSMN012-60MSX datasheet, PSMN012-60MSX pinout, PSMN012-60MSX application, or PSMN012-60MSX equivalent, key selection criteria include its 1.82 K/W junction-to-mounting-base thermal resistance, 8.5 nC Q_GD, 24.8 nC Q_G(tot), and LFPAK33 footprint compatibility with other 3.3 mm packages - critical for thermal management and layout reuse in high-current DC-DC and BLDC driver designs.

Technical Context

This MOSFET operates as a standard-level gate-driven power switch, requiring ≥10 V gate drive for full enhancement. Its R_DS(on) increases to 27 mΩ at T_j = 175 °C, confirming stable on-resistance over extended thermal range. The integrated source-drain diode exhibits 0.85 V forward voltage at 15 A and 25 °C, supporting synchronous rectification and freewheeling in half-bridge topologies.

Dynamic behavior is defined by 6.6 ns turn-on delay, 9.7 ns rise time, and 17.4 ns turn-off delay under 5 Ω external gate resistance. Avalanche ruggedness is specified at 34.3 mJ (unclamped, single-pulse), enabling robust operation in inductive load switching without external snubbers in many industrial applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage; defines use in ≤48 V nominal bus systems with margin.
R_DS(on)	10–12 mΩ @ V_GS = 10 V, I_D = 15 A, T_j = 25 °C - Enables <1.8 W conduction loss at 40 A, critical for thermal budget in compact motor drives.
I_D (cont)	53 A @ T_mb = 25 °C - High current capability with mounting base cooling; derates to 37 A at T_mb = 100 °C.
Q_GD	8.5 nC - Low gate-drain charge minimizes Miller-induced switching instability and enables faster hard-switching up to ~500 kHz.
R_th(j-mb)	1.82 K/W - Direct thermal path from die to PCB mounting base allows >70 W power dissipation with moderate heatsinking.
V_GS(th)	2.4–4.0 V @ I_D = 1 mA - Standard-level threshold ensures reliable turn-on with 5 V or 3.3 V logic-level drivers when combined with sufficient gate drive strength.
E_AS	34.3 mJ - Single-pulse unclamped avalanche energy rating supports inductive switching without failure under transient overvoltage events.

Pinout & Package

LFPAK33 (SOT1210) is a thermally enhanced surface-mount package with exposed mounting base connected to drain, optimized for high-current, low-R_th PCB layouts. Its 3.3 mm × 3.3 mm footprint and 0.65 mm lead pitch enable high-density placement while maintaining superior thermal performance versus SO-8 or DPAK.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce package inductance and resistance; essential for minimizing shoot-through risk and improving current sharing in paralleled configurations.
4	Gate (G)	Single gate input with low input capacitance (C_iss = 1222–1625 pF); compatible with standard gate drivers without requiring excessive peak current.
Mounting Base (mb)	Drain (D)	Exposed copper pad electrically and thermally connected to drain; must be soldered to large copper pour for thermal and electrical integrity in high-power switching nodes.

Key Features

Feature	Design Value
Low R_DS(on) × Q_G figure-of-merit	12 mΩ × 24.8 nC = 298 mΩ·nC - balances conduction and switching losses for high-frequency SMPS and motor phase-leg efficiency.
175 °C junction rating	Enables operation in sealed enclosures or high-ambient environments (e.g., industrial PLCs, HVAC controllers) without derating beyond datasheet curves.
LFPAK33 footprint compatibility	Direct replacement for other 3.3 mm × 3.3 mm packages (e.g., Power-SO8, TSDSON), simplifying board redesign and supply chain consolidation.
High peak current capability	IDM = 211 A (pulsed, tp ≤ 10 µs) - supports short-circuit withstand in motor phase protection and UPS inverter fault handling.

Applications

Brushless DC Motor Driver

Industrial DC-DC Converter

Use Scenario: Half-bridge leg in 24–48 V BLDC motor controller for automated guided vehicles (AGVs).

IC Role / Device Role / Timing Role: High-side/low-side power switch in three-phase inverter stage; handles PWM commutation at 20–40 kHz.

Use Value: 12 mΩ R_DS(on) and 1.82 K/W R_th(j-mb) limit junction temperature rise to <110 °C at 30 A RMS, eliminating need for active cooling.

Use Scenario: Primary-side synchronous rectifier in isolated 48 V → 12 V telecom DC-DC module.

IC Role / Device Role / Timing Role: Secondary-side N-channel MOSFET replacing Schottky diode; driven by transformer-coupled gate signal.

Use Value: 0.85 V V_SD and low Q_GD enable >95% efficiency at 20 A load while reducing thermal stress vs. discrete diode solution.

Power Over Ethernet (PoE) PSE

Smart Home Appliance Control

Use Scenario: 4-pair Class 5/6 PoE power sourcing equipment (PSE) switch controller.

IC Role / Device Role / Timing Role: Current-limiting pass switch in 57 V DC power delivery path; supports IEEE 802.3bt detection/classification.

Use Value: 60 V V_DS rating and 34.3 mJ avalanche energy ensure safe operation during cable fault transients and hot-swap events.

Use Scenario: Main power switch for compressor and fan control in smart HVAC indoor units.

IC Role / Device Role / Timing Role: High-current load switch controlled via microcontroller GPIO with level-shifting circuitry.

Use Value: Standard-level V_GS(th) (2.4–4.0 V) allows direct drive from 3.3 V MCU outputs with minimal external components, reducing BOM count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP016N06N	R_DS(on) = 1.6 mΩ @ 10 V (lower), but TO-220FP package (higher R_th(j-a)); no LFPAK33 footprint.	Better conduction loss, but requires larger board area and less efficient thermal coupling to PCB.	Select when ultra-low R_DS(on) dominates over board space and thermal integration.
ON Semiconductor NTMFS5C675NL	R_DS(on) = 6.7 mΩ @ 10 V; PowerTrench® 5x6 mm package; higher C_iss (2100 pF) increases gate drive demand.	Higher peak current (120 A) but larger footprint and inferior thermal resistance (2.5 K/W).	Select when higher current headroom is needed and PCB real estate permits larger package.

Compared with IPP016N06N and NTMFS5C675NL, PSMN012-60MSX offers optimal balance of low R_DS(on), compact LFPAK33 footprint, and industry-leading 1.82 K/W R_th(j-mb), making it preferred for space-constrained, thermally demanding motor and converter designs where layout density and thermal reliability are prioritized over absolute minimum on-resistance.

Availability

PSMN012-60MSX is available at Aetrix Electronics and suitable for brushless DC motor drivers, industrial DC-DC converters, and Power over Ethernet (PoE) PSE equipment requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for PSMN012-60MSX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors - including MOSFETs, logic, analog, and ESD protection devices - serving automotive, industrial, and consumer markets.

The PSMN012-60MSX belongs to Nexperia's LFPAK33 standard-level MOSFET product line, engineered for cost-sensitive, thermally demanding applications such as motor control, power supplies, and solid-state relays where high current density and robust thermal performance are required.

FAQ

Is PSMN012-60MSX suitable for 3.3 V gate drive?

No - PSMN012-60MSX is a standard-level MOSFET with V_GS(th) ranging from 2.4 V to 4.0 V and specified R_DS(on) only at V_GS = 10 V. At 3.3 V, R_DS(on) exceeds 100 mΩ, causing excessive conduction loss and thermal runaway. A dedicated gate driver or level shifter is required for reliable operation.

What is the maximum recommended PCB copper area for the mounting base?

Nexperia recommends a minimum 100 mm² exposed copper pour connected to the mounting base (drain) via ≥6 thermal vias (0.3 mm diameter, filled or plated). Larger areas (>200 mm²) further reduce R_th(j-mb) toward 1.5 K/W, enabling higher continuous current in thermally constrained layouts.

Can PSMN012-60MSX replace a DPAK MOSFET in an existing design?

Only with PCB layout revision - LFPAK33 (SOT1210) has different pad geometry, pin count (4 terminals + mounting base), and thermal land pattern than DPAK (TO-252). While both offer similar R_DS(on), the LFPAK33 requires its specific footprint per Figure 18 in the datasheet and cannot be drop-in substituted without rework.

Does PSMN012-60MSX have avalanche-rated capability for inductive switching?

Yes - it is fully specified for unclamped inductive switching with E_AS = 34.3 mJ at T_j(init) = 25 °C, ID = 53 A, and V_sup ≤ 60 V. This rating is validated per JEDEC JESD24-1 and supports reliable operation in relay driving, solenoid control, and motor phase-leg freewheeling without external snubbers.

PSMN012-60MSX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SOT-1210, 8-LFPAK33 (5-Lead)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 53A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 24.8 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1625 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 75W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK33

PSMN012-60MSX FAQ

1.How can I place an order for PSMN012-60MSX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN012-60MSX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN012-60MSX reliable?

The price and inventory of PSMN012-60MSX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN012-60MSX is usually 5 days.

3.What payment methods are accepted for PSMN012-60MSX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN012-60MSX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN012-60MSX?

PSMN012-60MSX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN012-60MSX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN012-60MSX?

For technical support, including PSMN012-60MSX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN012-60MSX requirements.

6.How does Aetrix verify that PSMN012-60MSX is sourced from the original manufacturer or authorized distributors?

All PSMN012-60MSX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN012-60MSX meets industry standards.

7.What is the process for return or replacement of PSMN012-60MSX?

All PSMN012-60MSX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN012-60MSX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN012-60MSX part is unused and in its original packaging.

Return procedure for PSMN012-60MSX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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