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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN012-60YS,115

Name: PSMN012-60YS,115
Brand: Nexperia USA Inc.
SKU: PSMN012-60YS,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN012-60YS,115

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PSMN012-60YS,115.pdf

Description:: MOSFET N-CH 60V 59A LFPAK56

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Product details

Overview

PSMN012-60YS from Nexperia is a standard-level N-channel MOSFET in LFPAK (SOT669) package, rated for 60 V V_DS, 11.1 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and qualified to 175 °C junction temperature. It delivers 59 A continuous drain current at T_mb = 25 °C and supports high-efficiency switching in DC-DC converters and lithium-ion battery protection circuits.

For engineers reviewing the PSMN012-60YS datasheet, PSMN012-60YS pinout, PSMN012-60YS application, or PSMN012-60YS equivalent, this device is selected for its low conduction loss, robust avalanche energy rating (71 mJ), thermal resistance of 0.8 K/W (typ), and optimized gate charge (Q_G(tot) = 28.4 nC) for fast switching with reduced drive loss.

Technical Context

This MOSFET employs Nexperia's Advanced TrenchMOS technology to achieve low R_DS(on) and low gate charge simultaneously. Its LFPAK package integrates a thermally enhanced mounting base directly connected to the drain, enabling efficient heat transfer to the PCB copper plane.

The device features a gate-source threshold voltage (V_GS(th)) of 2–4 V at 25 °C, stable down to 0.95 V at 175 °C, and exhibits strong avalanche ruggedness (71 mJ non-repetitive) under defined test conditions (V_GS = 10 V, I_D = 59 A, V_sup ≤ 60 V, R_GS = 50 Ω).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage before breakdown; defines safe operating range in 48 V systems and server power rails.
R_DS(on)	11.1 mΩ @ V_GS = 10 V, I_D = 15 A, T_j = 25 °C - Low conduction loss enables <1.7 W dissipation at 40 A, critical for high-current load switching.
I_D (continuous)	59 A @ T_mb = 25 °C - High current capability supports compact designs in motor control and server PSU outputs.
Q_G(tot)	28.4 nC @ V_DS = 30 V, I_D = 30 A - Enables fast turn-on with moderate gate driver strength (e.g., 1 A peak), reducing switching losses.
R_th(j-mb)	0.8 K/W (typ) - Junction-to-mounting-base thermal resistance allows direct thermal path to PCB, supporting >70 W power handling with proper copper area.
E_AS	71 mJ - Non-repetitive avalanche energy rating confirms robustness against inductive switching transients in motor drives and DC-DC flyback stages.
V_GS(th)	2–4 V @ T_j = 25 °C - Ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers without level-shifting.

Pinout & Package

PSMN012-60YS uses the SOT669 (LFPAK) 4-lead plastic surface-mount package. The mounting base (mb) is electrically connected to the drain and serves as the primary thermal interface to the PCB.

Pin/Terminal	Circuit Role	Design Meaning
1	Source	Primary current return path; three pins (1–3) are internally paralleled for low-inductance, high-current source connection.
2	Source	Redundant source terminal to minimize package inductance and improve current sharing in high-di/dt applications.
3	Source	Third source terminal enhancing thermal and electrical performance; all three source pins must be soldered to PCB ground plane.
4	Gate	Control input; requires low-impedance drive path to minimize ringing and ensure clean switching transitions.
mb	Drain / Mounting Base	Exposed copper pad on underside; electrically tied to drain and provides dominant thermal conduction path to PCB copper pour.

Key Features

Feature	Design Value
Advanced TrenchMOS structure	Enables simultaneous optimization of R_DS(on) (11.1 mΩ) and Q_G(tot) (28.4 nC), reducing both conduction and switching losses.
LFPAK package (SOT669)	Delivers 3× higher power density than standard SO8, with 0.8 K/W typical thermal resistance for improved thermal management.
175 °C junction rating	Supports operation in high-ambient environments (e.g., enclosed server PSUs, industrial motor drives) without derating at full current.
High avalanche ruggedness	71 mJ E_AS ensures reliability during inductive load switching, eliminating need for external snubbers in many motor control topologies.
Low gate threshold variation	V_GS(th) shifts only from 3 V (25 °C) to 0.95 V (175 °C), maintaining predictable turn-on behavior across temperature extremes.

Applications

DC-DC Converters

Lithium-ion Battery Protection

Use Scenario: Synchronous rectification in 12 V–48 V buck converters for telecom and server power supplies.

IC Role / Device Role: High-side or low-side power switch delivering high efficiency at 300 kHz–1 MHz switching frequencies.

Use Value: 11.1 mΩ R_DS(on) and 28.4 nC Q_G reduce total power loss by >15% compared to legacy SO8 MOSFETs at 40 A output.

Use Scenario: Charge/discharge path control and overcurrent cutoff in multi-cell Li-ion battery packs (e.g., 12–24 V portable tools).

IC Role / Device Role: Back-to-back configured N-channel switch enabling bidirectional current blocking and precise fault current limiting.

Use Value: 175 °C rating and 71 mJ avalanche energy allow safe interruption of >50 A fault currents without thermal runaway or bond-wire failure.

Load Switching

Motor Control

Use Scenario: Hot-swap and inrush current limiting for FPGA, ASIC, or GPU power rails in datacenter equipment.

IC Role / Device Role: Single-N-channel high-current load switch with integrated gate driver compatibility and fast turn-off (<30 ns fall time).

Use Value: 59 A continuous current and 236 A pulsed rating support rapid system power-up while minimizing voltage droop and thermal stress.

Use Scenario: Half-bridge leg in 24 V brushed DC motor drivers for industrial automation and robotics.

IC Role / Device Role: Low-side switching element handling PWM-controlled armature current up to 40 A RMS.

Use Value: Robust body diode (V_SD = 0.82 V @ 15 A) and 35 ns reverse recovery time enable efficient freewheeling with minimal shoot-through risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
PSMN015-60YS,115	R_DS(on) = 15.2 mΩ @ 25 °C; identical LFPAK package and 60 V rating.	Slightly higher conduction loss; suitable where cost sensitivity outweighs marginal efficiency gain.	Select when lower gate charge (23.3 nC) or tighter R_DS(on) tolerance is not required and BOM consolidation favors same family.
IPB012N06NATMA1	60 V, 1.2 mΩ (typ) at 100 A, TO-263 package; higher current, lower R_DS(on), but larger footprint and 1.2 K/W R_th(j-c).	Better for >60 A continuous loads; less suitable for space-constrained LFPAK-replacement designs.	Choose only if board layout permits TO-263 and thermal design accommodates higher junction-to-case resistance.

Compared with PSMN012-60YS, PSMN015-60YS offers identical form factor and thermal profile with modest R_DS(on) trade-off, while IPB012N06NATMA1 delivers superior conduction performance at the expense of package size and thermal interface complexity-making PSMN012-60YS optimal for balanced high-density, high-reliability 40–60 A switching.

Availability

PSMN012-60YS is available at Aetrix Electronics and suitable for DC-DC converters, lithium-ion battery protection circuits, and industrial motor control systems requiring stable component supply and long-term production continuity.

Supply support for PSMN012-60YS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in MOSFETs, ESD protection, and automotive-qualified components.

This part belongs to Nexperia's standard-level TrenchMOS LFPAK portfolio, engineered for industrial and communications power conversion where thermal efficiency, avalanche robustness, and surface-mount manufacturability are prioritized over ultra-low gate charge or automotive qualification.

FAQ

What is the maximum continuous drain current for PSMN012-60YS at 100 °C mounting base temperature?

The maximum continuous drain current is 42 A at T_mb = 100 °C, as specified in the Limiting Values table. This reflects thermal derating due to reduced heat dissipation capacity at elevated temperatures, and aligns with the 89 W total power dissipation limit at T_mb = 25 °C.

Does PSMN012-60YS have an integrated body diode, and what are its key parameters?

Yes, it includes a parasitic source-drain diode with forward voltage V_SD = 0.82 V at I_S = 15 A and T_j = 25 °C, reverse recovery time t_rr = 35 ns, and recovered charge Q_r = 41 nC. These values support efficient freewheeling in half-bridge and synchronous rectifier configurations.

Can PSMN012-60YS be driven directly by a 3.3 V microcontroller GPIO?

No-its V_GS(th) minimum is 2 V, but full enhancement requires ≥10 V for specified R_DS(on). Driving with 3.3 V results in high R_DS(on) (>100 mΩ) and excessive conduction loss; a gate driver or level shifter is required for reliable switching.

Is the mounting base (mb) electrically isolated from the drain in PSMN012-60YS?

No-the mounting base is internally connected to the drain terminal, as confirmed in the Pinning Information section and package outline. This design maximizes thermal conduction but requires careful PCB layout to avoid unintended drain-to-ground shorts when the mb is soldered to a copper pour.

PSMN012-60YS,115 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 59A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 11.1mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 28.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1685 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 89W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMN012-60YS,115 FAQ

1.How can I place an order for PSMN012-60YS,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN012-60YS,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN012-60YS,115 reliable?

The price and inventory of PSMN012-60YS,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN012-60YS,115 is usually 5 days.

3.What payment methods are accepted for PSMN012-60YS,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN012-60YS,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN012-60YS,115?

PSMN012-60YS,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN012-60YS,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN012-60YS,115?

For technical support, including PSMN012-60YS,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN012-60YS,115 requirements.

6.How does Aetrix verify that PSMN012-60YS,115 is sourced from the original manufacturer or authorized distributors?

All PSMN012-60YS,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN012-60YS,115 meets industry standards.

7.What is the process for return or replacement of PSMN012-60YS,115?

All PSMN012-60YS,115 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN012-60YS,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN012-60YS,115 part is unused and in its original packaging.

Return procedure for PSMN012-60YS,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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