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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN012-80PS,127

Name: PSMN012-80PS,127
Brand: Nexperia USA Inc.
SKU: PSMN012-80PS,127
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN012-80PS,127

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: PSMN012-80PS,127.pdf

Description:: MOSFET N-CH 80V 74A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PSMN012-80PS from Nexperia is an N-channel standard-level power MOSFET in TO-220AB (SOT78) package, rated for 80 V V_DS, 11 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and qualified to 175 °C junction temperature. It delivers 74 A continuous drain current at T_mb = 25 °C and supports high-efficiency DC-to-DC conversion, motor control, and server power supply switching.

For engineers reviewing the PSMN012-80PS datasheet, PSMN012-80PS pinout, PSMN012-80PS application, or PSMN012-80PS equivalent, key selection criteria include its low conduction loss, standard gate drive compatibility (V_GS(th) = 2–4 V), robust avalanche energy rating (100 mJ), and thermal resistance of 0.65 K/W from junction to mounting base.

Technical Context

This MOSFET employs a planar silicon process optimized for industrial-grade reliability and thermal stability up to 175 °C. Its gate threshold voltage range (2–4 V at 25 °C) ensures compatibility with standard 10 V gate drivers while maintaining safe margin against spurious turn-on.

The device features a monolithic source-drain diode with 45 ns reverse recovery time and 64 nC recovered charge, enabling synchronous rectification in hard-switched topologies. Its 9.4 nC Q_GD and 43 nC Q_G(tot) support fast switching with minimal Miller-induced oscillation risk under 4.7 Ω external gate resistance.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage for 48 V bus and 24 V industrial systems with safety margin.
R_DS(on)	9–11 mΩ @ V_GS = 10 V, T_j = 25 °C - Enables <1.1 W conduction loss at 15 A, reducing heatsink requirements.
I_D	74 A @ T_mb = 25 °C - Supports high-current load switching without derating in forced-air or heatsink-mounted setups.
Q_GD	9.4 nC - Low gate-drain charge minimizes switching losses and improves controllability during hard commutation.
R_th(j-mb)	0.65 K/W - Enables direct heatsink mounting with predictable thermal performance and stable operation at 175 °C T_j.
E_AS	100 mJ - Unclamped avalanche ruggedness allows reliable operation under inductive switching stress without snubbers.
V_GS(th)	2–4 V @ T_j = 25 °C - Ensures clean turn-on with standard logic-level or microcontroller-driven gate drivers.

Pinout & Package

PSMN012-80PS uses the TO-220AB (SOT78) plastic single-ended package with heatsink mounting and three leads. The mounting base (mb) is electrically connected to the drain terminal, requiring isolation when mounted to grounded heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate (G)	Control input; requires ≤20 V gate-source voltage; internal R_G = 0.97 Ω limits ringing in high-dV/dt environments.
2	Drain (D)	Main power output node; electrically tied to mounting base-requires insulating washer if heatsink is grounded.
3	Source (S)	Reference node for gate drive and current sensing; forms return path for 74 A continuous current.

Key Features

Feature	Design Value
Standard-level gate drive compatibility	Operates reliably with 10 V gate sources-no level-shifting needed for MCU or PWM controller outputs.
High-temperature qualification	Rated for continuous operation at 175 °C junction temperature-suitable for sealed industrial enclosures and server PSUs.
Low R_DS(on) × Q_G figure of merit	11 mΩ × 43 nC = 473 mΩ·nC-balances conduction and switching losses for high-frequency (<500 kHz) SMPS designs.
Integrated source-drain diode	Forward voltage 0.86 V @ 25 A, T_j = 25 °C-enables body-diode freewheeling in buck and half-bridge topologies.
Avalanche-rated construction	100 mJ non-repetitive E_AS-tolerates inductive kickback in motor drive and relay driver applications without external protection.

Applications

DC-to-DC Converters

Server Power Supplies

Use Scenario: Primary-side switch in 48 V input, 12 V output isolated forward converter.

IC Role / Device Role / Timing Role: High-side power switch handling 50 A peak currents at 200 kHz switching frequency.

Use Value: 11 mΩ R_DS(on) reduces conduction loss by >30% vs. comparable 20 mΩ devices, improving full-load efficiency to ≥94%.

Use Scenario: OR-ing FET in redundant 12 V intermediate bus architecture.

IC Role / Device Role / Timing Role: Load-sharing switch controlling current flow from dual hot-swap controllers.

Use Value: Low 9.4 nC Q_GD enables fast turn-off (<50 ns) to prevent backfeed during fault events.

Motor Control

Load Switching

Use Scenario: Half-bridge leg in 24 V brushed DC motor driver for HVAC actuators.

IC Role / Device Role / Timing Role: Low-side switching element conducting 30 A continuous current with PWM duty cycling.

Use Value: 175 °C T_j rating allows operation in thermally constrained chassis without active cooling.

Use Scenario: Inrush-limited 48 V system power enable for industrial PLC I/O modules.

IC Role / Device Role / Timing Role: High-side load switch controlled via gate resistor network for soft-start ramp.

Use Value: 80 V V_DS withstands load dump transients up to 65 V, eliminating need for TVS clamping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFZ44NPBF	R_DS(on) = 28 mΩ @ 10 V; lower V_DS (55 V); higher Q_G (61 nC)	Limited to ≤40 V systems; less efficient at high current due to higher conduction loss	Select only when cost sensitivity outweighs efficiency and voltage margin requirements.
STP80NF55-08	R_DS(on) = 8 mΩ @ 10 V; higher V_DS (55 V); TO-220FP package (isolated tab)	Not suitable for 80 V applications; lower thermal resistance but no avalanche rating	Prefer where isolation is mandatory and voltage stress remains below 45 V.

Compared with IRFZ44NPBF and STP80NF55-08, PSMN012-80PS uniquely combines 80 V rating, 11 mΩ on-resistance, and 100 mJ avalanche capability in a standard TO-220AB package-making it optimal for industrial 48 V systems demanding both voltage headroom and ruggedness.

Availability

PSMN012-80PS is available at Aetrix Electronics and suitable for DC-to-DC converters, motor control circuits, and server power supplies requiring stable component supply across extended production lifecycles.

Supply support for PSMN012-80PS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD-protected components.

This device belongs to Nexperia's standard-level power MOSFET product line, engineered for industrial and communications equipment where thermal robustness, gate drive simplicity, and avalanche tolerance are critical design requirements.

FAQ

Is PSMN012-80PS suitable for gate driving with 5 V logic?

No. PSMN012-80PS is a standard-level MOSFET with V_GS(th) = 2–4 V and R_DS(on) specified at V_GS = 10 V. At 5 V, R_DS(on) rises significantly (>40 mΩ), increasing conduction loss and thermal stress. A logic-level alternative like PSMN2R0-30YL is required for 5 V drive.

What is the maximum continuous drain current at 100 °C mounting base temperature?

Per Figure 1 in the datasheet, the continuous drain current is derated to 52 A at T_mb = 100 °C with V_GS = 10 V. This reflects thermal limitation-not electrical-so proper heatsinking maintains safe junction temperature below 175 °C.

Does the mounting base require electrical isolation from the heatsink?

Yes. Pin 2 (Drain) and the mounting base are internally connected. If the heatsink is grounded or at a different potential, an insulating pad and shoulder washer must be used to prevent short circuits and ensure safe operation.

Can PSMN012-80PS replace a 60 V MOSFET in an existing 48 V design?

Yes-with design verification. Its 80 V rating provides 33% voltage margin over 48 V nominal, improving immunity to transients and ripple. However, gate drive timing and layout must accommodate its 43 nC total gate charge, which is ~20% higher than typical 60 V equivalents.

PSMN012-80PS,127 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 74A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 11mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 43 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2782 pF @ 12 V

FET Feature:: -

Power Dissipation (Max):: 148W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

PSMN012-80PS,127 FAQ

1.How can I place an order for PSMN012-80PS,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN012-80PS,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN012-80PS,127 reliable?

The price and inventory of PSMN012-80PS,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN012-80PS,127 is usually 5 days.

3.What payment methods are accepted for PSMN012-80PS,127?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN012-80PS,127 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN012-80PS,127?

PSMN012-80PS,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN012-80PS,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN012-80PS,127?

For technical support, including PSMN012-80PS,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN012-80PS,127 requirements.

6.How does Aetrix verify that PSMN012-80PS,127 is sourced from the original manufacturer or authorized distributors?

All PSMN012-80PS,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN012-80PS,127 meets industry standards.

7.What is the process for return or replacement of PSMN012-80PS,127?

All PSMN012-80PS,127 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN012-80PS,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN012-80PS,127 part is unused and in its original packaging.

Return procedure for PSMN012-80PS,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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