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Nexperia USA Inc. PSMN013-100BS,118
- Part No.:
- PSMN013-100BS,118
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
PSMN013-100BS,118.pdf
- Description:
- MOSFET N-CH 100V 68A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:14,956
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Product details
Overview
PSMN013-100BS from Nexperia is a standard-level N-channel MOSFET in D2PAK (SOT404) package, rated for 100 V VDS, 13.9 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C, and qualified to 175 °C junction temperature. It delivers 68 A continuous drain current at Tmb = 25 °C and supports unclamped avalanche energy up to 127 mJ - deployed in high-efficiency DC-DC converters and server power supplies.
For engineers reviewing the PSMN013-100BS datasheet, PSMN013-100BS pinout, PSMN013-100BS application, or PSMN013-100BS equivalent, key selection criteria include its 100 V blocking capability, low RDS(on) at standard gate drive (10 V), thermal robustness to 175 °C, and D2PAK mounting-base thermal path with Rth(j-mb) = 0.5 K/W typical.
Technical Context
This MOSFET employs planar silicon technology optimized for industrial-grade switching performance. Its gate threshold voltage (VGS(th)) ranges from 2 V to 4.6 V across -55 °C to 175 °C, enabling reliable turn-on with standard logic-level gate drivers. The device features an integrated source-drain diode with 1.2 V forward voltage at 15 A and 52–68 ns reverse recovery time.
Thermal design centers on the D2PAK's exposed mounting base (connected to drain), delivering 0.5 K/W typical junction-to-mounting-base resistance. Dynamic behavior is characterized by 59–83 nC total gate charge and 17–23.8 nC gate-drain charge, supporting efficient hard-switching in 100 kHz–500 kHz power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum drain-source blocking voltage; enables use in 48 V and 60 V bus systems with margin. |
| RDS(on) | 13.9 mΩ @ VGS = 10 V, Tj = 25 °C - Low conduction loss at standard gate drive; reduces I²R heating in high-current load switches. |
| ID | 68 A @ Tmb = 25 °C - Continuous current rating limited by package thermal capacity, not die capability. |
| EAS | 127 mJ - Non-repetitive avalanche energy; supports robust operation during inductive switching transients without external snubbers. |
| Rth(j-mb) | 0.5 K/W typical - Enables direct heatsinking via mounting base; critical for thermal management in compact power modules. |
| QG(tot) | 59–83 nC - Gate charge determines driver strength requirement; compatible with common 1–2 A peak gate drivers. |
| Ciss | 3195–4315 pF - Input capacitance impacts switching speed and EMI; stable over VDS range per Fig. 16. |
Pinout & Package
D2PAK (SOT404) package with exposed copper mounting base (pin 2, drain-connected), surface-mount footprint, and three leads (lead 2 cropped). Mounting base provides primary thermal path and electrical connection to drain.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | G | Gate terminal - Controls channel conduction; requires 10 V drive for full enhancement; gate leakage <100 nA. |
| 2 (mb) | D / mounting base | Drain and thermal interface - Exposed copper pad electrically tied to drain; must be soldered to PCB copper pour for thermal performance. |
| 3 | S | Source terminal - Return path for load current; referenced to gate drive ground; source-drain diode cathode. |
Key Features
| Feature | Design Value |
|---|---|
| Standard-level gate drive compatibility | Operates fully enhanced at VGS = 10 V - eliminates need for level-shifting or high-voltage gate drivers in 12 V/15 V control rails. |
| 175 °C junction-rated construction | Qualified per industrial temperature grade - supports operation in sealed enclosures or high-ambient environments without derating. |
| Low RDS(on) × QG figure of merit | ~0.83 Ω·nC (13.9 mΩ × 60 nC) - balances conduction and switching losses for high-frequency SMPS efficiency. |
| Unclamped inductive switching ruggedness | 127 mJ EAS - withstands energy from motor windings or transformer leakage inductance without failure. |
| Integrated source-drain diode | VSD = 0.85–1.2 V @ 15 A - enables synchronous rectification or freewheeling paths without discrete diode. |
Applications
| DC-DC Converters | Server Power Supplies |
|---|---|
|
Use Scenario: Primary-side switch in 48 V input, 12 V output isolated LLC resonant converter. IC Role / Device Role / Timing Role: High-side power switch handling 40–60 A peak currents at 300–500 kHz switching frequency. Use Value: 13.9 mΩ RDS(on) minimizes conduction loss at high load; 127 mJ avalanche rating absorbs resonant tank energy during zero-voltage switching transitions. |
Use Scenario: OR-ing FET in redundant 12 V intermediate bus architecture. IC Role / Device Role / Timing Role: Load switch controlling power path between parallel PSUs; operates in linear region during hot-swap sequencing. Use Value: Low VGS(th) (2–4.6 V) ensures predictable turn-on with system supervisor ICs; 175 °C rating sustains reliability under sustained 85 °C ambient. |
| Motor Control | Load Switching |
|
Use Scenario: Half-bridge high-side switch driving brushed DC motor in industrial actuator. IC Role / Device Role / Timing Role: PWM-controlled power stage switching up to 30 kHz; handles inductive kickback during commutation. Use Value: 100 V VDS accommodates back-EMF spikes; 52–68 ns trr limits diode recovery loss during shoot-through prevention. |
Use Scenario: Hot-swap controller for 24 V industrial I/O module with 20 A max load. IC Role / Device Role / Timing Role: Inrush-limited power switch; activated after soft-start ramp completes. Use Value: 68 A ID rating supports surge currents; Rth(j-mb) = 0.5 K/W allows direct heatsink attachment for sustained 15 A operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP110N10F7 | 100 V, 11 mΩ @ 10 V, TO-220FP package; lower RDS(on) but higher QG (105 nC); no avalanche rating specified. | Requires mechanical heatsink; unsuitable for surface-mount-only designs or high-temperature sealed enclosures. | Prefer when lowest conduction loss is critical and board space permits through-hole mounting. |
| IRF3205PBF | 55 V, 8 mΩ @ 10 V, TO-220; incompatible VDS rating for 48 V+ systems; lacks 175 °C qualification. | Only viable in ≤24 V applications; not rated for industrial ambient temperatures above 125 °C. | Select only for legacy 24 V motor drives where voltage margin and temperature rating are non-critical. |
Compared with STP110N10F7 and IRF3205PBF, PSMN013-100BS uniquely combines 100 V rating, D2PAK surface-mount form factor, 175 °C qualification, and documented 127 mJ avalanche energy - making it the only option suitable for compact, high-temperature, high-reliability industrial DC-DC and server OR-ing designs.
Availability
PSMN013-100BS is available at Aetrix Electronics and suitable for DC-DC converters, server power supplies, motor control circuits, and industrial load switching applications requiring stable component supply and long-term manufacturability.
Supply support for PSMN013-100BS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors - including MOSFETs, logic, bipolar transistors, and ESD protection devices.
This device belongs to Nexperia's standard-level power MOSFET product line, engineered for industrial and communications equipment demanding robust thermal performance, avalanche ruggedness, and surface-mount scalability.
FAQ
Is PSMN013-100BS suitable for automotive applications?
No. This part is not AEC-Q101 qualified and lacks automotive-specific testing or documentation. Nexperia explicitly states in its legal disclaimers that non-automotive qualified products are unsuitable for automotive use, including safety-critical or life-support systems. Use only in industrial, computing, or communications equipment.
What is the maximum safe operating temperature for continuous operation?
The device is qualified for continuous operation up to 175 °C junction temperature (Tj). However, sustained operation near this limit requires careful thermal design: mounting base temperature (Tmb) must remain ≤100 °C to maintain 47 A current rating per Fig. 2, and PCB copper area must support Rth(j-mb) ≤0.9 K/W worst-case.
Can PSMN013-100BS be driven directly from a 3.3 V microcontroller GPIO?
No. With VGS(th) minimum of 2 V and typical turn-on at ~4 V, a 3.3 V drive yields incomplete enhancement and high RDS(on) (>50 mΩ), causing excessive heating. Standard-level operation requires ≥10 V gate drive; a dedicated gate driver or level shifter is mandatory for reliable switching.
Does the D2PAK mounting base require electrical isolation from the heatsink?
Yes. Since the mounting base is internally connected to the drain (pin 2), direct contact with a grounded heatsink creates a short circuit. Thermal interface material must be electrically insulating (e.g., ceramic pads or silicone-based isolating TIM), or the heatsink must be floating and referenced to drain potential.
PSMN013-100BS,118 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 68A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 13.9mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 59 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3195 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 170W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
PSMN013-100BS,118 FAQ
1.How can I place an order for PSMN013-100BS,118 through Aetrix?
Please submit a Request for Quotation (RFQ) for PSMN013-100BS,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PSMN013-100BS,118 reliable?
The price and inventory of PSMN013-100BS,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN013-100BS,118 is usually 5 days.
3.What payment methods are accepted for PSMN013-100BS,118?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN013-100BS,118 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PSMN013-100BS,118?
PSMN013-100BS,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PSMN013-100BS,118 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PSMN013-100BS,118?
For technical support, including PSMN013-100BS,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN013-100BS,118 requirements.
6.How does Aetrix verify that PSMN013-100BS,118 is sourced from the original manufacturer or authorized distributors?
All PSMN013-100BS,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN013-100BS,118 meets industry standards.
7.What is the process for return or replacement of PSMN013-100BS,118?
All PSMN013-100BS,118 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN013-100BS,118, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PSMN013-100BS,118 part is unused and in its original packaging.
Return procedure for PSMN013-100BS,118:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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