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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

NXP Semiconductors PSMN013-100ES,127

Name: PSMN013-100ES,127
Brand: NXP Semiconductors
SKU: PSMN013-100ES,127
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN013-100ES,127

Manufacturer:: NXP Semiconductors

Category:: FETs, MOSFETs

Package:: -

Datasheet:: PSMN013-100ES,127.pdf

Description:: MOSFET N-CH 100V I2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PSMN013-100ES from Nexperia is a standard-level N-channel enhancement MOSFET in I2PAK (SOT226) package, rated for 100 V drain-source voltage, 13.9 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and 68 A continuous drain current at T_mb = 25 °C. It operates up to 175 °C junction temperature and delivers low conduction loss and fast switching for high-efficiency power conversion stages in server PSUs and motor drives.

For engineers reviewing the PSMN013-100ES datasheet, PSMN013-100ES pinout, PSMN013-100ES application, or PSMN013-100ES equivalent, key selection criteria include its 100 V V_DS, 13.9 mΩ R_DS(on) at 10 V gate drive, 59 nC total gate charge, 170 W power dissipation at T_mb = 25 °C, and I2PAK thermal performance with 0.5 K/W R_th(j-mb).

Technical Context

This MOSFET uses planar silicon technology with standard-level gate threshold (V_GS(th) = 2–4 V typ), enabling direct drive from 5 V or 10 V logic without level shifting. Its low Q_G(tot) (59 nC) and Q_GD (17 nC) support high-frequency operation in synchronous buck converters and half-bridge topologies.

Thermally, it features a mounting-base-connected drain (mb) for low R_th(j-mb) (0.5 K/W typ), allowing efficient heat transfer to heatsinks. The integrated source-drain diode has V_SD = 0.8–1.2 V at 15 A and t_rr = 52 ns, supporting moderate-speed freewheeling in DC-DC and motor control.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage in power switch position; suitable for 48 V input systems with margin.
R_DS(on)	13.9 mΩ @ V_GS = 10 V, T_j = 25 °C - Enables <1.4 W conduction loss at 35 A, critical for thermal management in compact PSUs.
I_D	68 A @ T_mb = 25 °C - Continuous current rating limited by I2PAK package thermal capacity, not die capability.
Q_G(tot)	59 nC @ V_GS = 10 V, V_DS = 50 V - Determines gate driver strength requirement; supports >500 kHz switching with appropriate driver.
R_th(j-mb)	0.5 K/W typ - Enables high-power dissipation with minimal ΔT between junction and heatsink base.
E_AS	127 mJ - Unclamped avalanche energy rating confirms ruggedness under inductive turn-off stress in motor and relay drivers.
V_GS(th)	2–4 V @ T_j = 25 °C - Ensures reliable turn-on with standard logic-level gate drivers; stable across -55 to 175 °C.

Pinout & Package

The PSMN013-100ES is housed in an I2PAK (SOT226) plastic single-ended package with TO-262 outline. The mounting base (mb) is electrically connected to the drain terminal and serves as the primary thermal path.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control electrode; requires ≤20 V absolute max drive; 1 Ω internal AC gate resistance limits ringing.
2 (D)	Drain	Main high-side power terminal; internally bonded to mounting base for low-inductance, high-current return path.
3 (S)	Source	Power return reference; used for gate drive referencing and current sensing in low-side configurations.
mb	Mounting base	Electrically tied to drain; provides mechanical attachment and dominant thermal conduction path to heatsink.

Key Features

Feature	Design Value
Low R_DS(on)	13.9 mΩ at 10 V drive enables high-efficiency operation in 48 V server PSU output stages with <1.5 W loss at 35 A.
Fast switching	59 nC Q_G(tot) and 17 nC Q_GD allow clean, low-loss transitions in 300–800 kHz DC-DC converters.
High-temperature operation	Rated to 175 °C junction temperature supports use in thermally constrained industrial enclosures without derating.
Avalanche ruggedness	127 mJ E_AS ensures reliable operation during unclamped inductive switching events in motor H-bridges.
I2PAK thermal design	0.5 K/W R_th(j-mb) enables >100 W dissipation with modest heatsinking-critical for space-constrained load switches.

Applications

Server Power Supply	Industrial Motor Control
Use Scenario: Primary-side synchronous rectification and secondary-side high-current OR-ing in 48 V intermediate bus architectures. IC Role / Device Role / Timing Role: High-side N-channel MOSFET switch operating at 300–600 kHz with 10 V gate drive. Use Value: 13.9 mΩ R_DS(on) reduces conduction loss by >30% vs. comparable 20 mΩ devices, improving full-load efficiency by ~0.4%.	Use Scenario: Half-bridge leg in 24–48 V brushed DC motor drivers for factory automation actuators. IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current up to 68 A peak. Use Value: 127 mJ avalanche energy rating eliminates need for external snubbers during inductive turn-off, simplifying PCB layout.
DC-DC Converter	Load Switching
Use Scenario: High-current buck converter stage in telecom power modules delivering 20–50 A at 3.3/5/12 V. IC Role / Device Role / Timing Role: Synchronous rectifier with fast body diode recovery (t_rr = 52 ns) and low Q_GD. Use Value: 17 nC Q_GD minimizes Miller-induced shoot-through risk, enabling robust gate timing margins at 1 MHz.	Use Scenario: Hot-swap and inrush-limited power distribution for FPGA or ASIC supply rails in embedded systems. IC Role / Device Role / Timing Role: Single-pole, high-current load switch controlled via microcontroller GPIO. Use Value: 100 V V_DS rating provides headroom against transients on 48 V backplanes, ensuring long-term reliability.

Server Power Supply

Industrial Motor Control

Use Scenario: Primary-side synchronous rectification and secondary-side high-current OR-ing in 48 V intermediate bus architectures.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET switch operating at 300–600 kHz with 10 V gate drive.

Use Value: 13.9 mΩ R_DS(on) reduces conduction loss by >30% vs. comparable 20 mΩ devices, improving full-load efficiency by ~0.4%.

Use Scenario: Half-bridge leg in 24–48 V brushed DC motor drivers for factory automation actuators.

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current up to 68 A peak.

Use Value: 127 mJ avalanche energy rating eliminates need for external snubbers during inductive turn-off, simplifying PCB layout.

DC-DC Converter

Load Switching

Use Scenario: High-current buck converter stage in telecom power modules delivering 20–50 A at 3.3/5/12 V.

IC Role / Device Role / Timing Role: Synchronous rectifier with fast body diode recovery (t_rr = 52 ns) and low Q_GD.

Use Value: 17 nC Q_GD minimizes Miller-induced shoot-through risk, enabling robust gate timing margins at 1 MHz.

Use Scenario: Hot-swap and inrush-limited power distribution for FPGA or ASIC supply rails in embedded systems.

IC Role / Device Role / Timing Role: Single-pole, high-current load switch controlled via microcontroller GPIO.

Use Value: 100 V V_DS rating provides headroom against transients on 48 V backplanes, ensuring long-term reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N10F7	100 V, 11 mΩ R_DS(on), 110 A I_D, TO-220 package, higher Q_G (85 nC)	Higher current rating but larger footprint and slower switching due to higher gate charge	Prefer when board space allows TO-220 and peak current exceeds 68 A; avoid if >500 kHz operation required.
IRF540NPBF	100 V, 44 mΩ R_DS(on), 33 A I_D, TO-220, lower cost, older process	Significantly higher conduction loss and lower thermal capability; no 175 °C rating	Acceptable only for low-duty-cycle, low-power load switching where efficiency and temperature margin are non-critical.

Compared with STP110N10F7 and IRF540NPBF, the PSMN013-100ES offers optimal balance of low R_DS(on), fast switching, and I2PAK thermal performance-making it preferred for high-density, high-efficiency 48 V power systems where board area and thermal management are constrained.

Availability

PSMN013-100ES is available at Aetrix Electronics and suitable for server power supplies, industrial motor controllers, DC-DC converters, and high-reliability load switching applications requiring stable component supply and long-term manufacturability.

Supply support for PSMN013-100ES includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in MOSFETs, ESD protection, and logic ICs for industrial and consumer markets.

The PSMN013-100ES belongs to Nexperia's standard-level power MOSFET product line, engineered for cost-sensitive yet thermally demanding applications such as communications infrastructure, industrial automation, and enterprise power systems.

FAQ

What is the maximum continuous drain current rating for PSMN013-100ES?

The PSMN013-100ES has a maximum continuous drain current (I_D) of 68 A at mounting base temperature (T_mb) = 25 °C. This rating is package-limited-not die-limited-and decreases to 47 A at T_mb = 100 °C per Figure 1 in the datasheet. Derating must follow the normalized curve in Figure 1 for real-world thermal conditions.

Does PSMN013-100ES support 5 V gate drive?

No-PSMN013-100ES is a standard-level MOSFET with V_GS(th) = 2–4 V typ, but its R_DS(on) is specified at V_GS = 10 V (13.9 mΩ). At 5 V gate drive, R_DS(on) rises significantly (>50 mΩ), increasing conduction loss. It requires 10 V gate drive for full performance; a gate driver or level shifter is recommended for logic-level MCU interfaces.

What is the thermal resistance from junction to mounting base for PSMN013-100ES?

The PSMN013-100ES has a typical thermal resistance from junction to mounting base (R_th(j-mb)) of 0.5 K/W, with a maximum of 0.9 K/W. This low value reflects the I2PAK package's metal mounting base directly connected to the drain, enabling efficient heat transfer to external heatsinks without thermal interface material dependency.

Is PSMN013-100ES suitable for avalanche operation?

Yes-the PSMN013-100ES is rated for non-repetitive drain-source avalanche energy (E_AS) of 127 mJ under defined conditions (V_GS = 10 V, I_D = 68 A, V_sup ≤ 100 V, unclamped, R_GS = 50 Ω). This makes it suitable for inductive load switching in motor control and relay drivers where controlled avalanche may occur during turn-off.

What is the gate charge profile of PSMN013-100ES?

The PSMN013-100ES has a total gate charge (Q_G(tot)) of 59 nC at V_GS = 10 V, V_DS = 50 V, and I_D = 25 A. Its gate-drain charge (Q_GD) is 17 nC, and gate-source plateau voltage (V_GS(pl)) is 4.4 V. These values confirm suitability for high-frequency switching with minimized Miller effect and predictable drive requirements.

PSMN013-100ES,127 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: *

Package/Case:: -

Packaging:: Tube

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

PSMN013-100ES,127 FAQ

1.How can I place an order for PSMN013-100ES,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN013-100ES,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN013-100ES,127 reliable?

The price and inventory of PSMN013-100ES,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN013-100ES,127 is usually 5 days.

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PSMN013-100ES,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN013-100ES,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN013-100ES,127?

For technical support, including PSMN013-100ES,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN013-100ES,127 requirements.

6.How does Aetrix verify that PSMN013-100ES,127 is sourced from the original manufacturer or authorized distributors?

All PSMN013-100ES,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN013-100ES,127 meets industry standards.

7.What is the process for return or replacement of PSMN013-100ES,127?

All PSMN013-100ES,127 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN013-100ES,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN013-100ES,127 part is unused and in its original packaging.

Return procedure for PSMN013-100ES,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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