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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN013-100PS,127

Name: PSMN013-100PS,127
Brand: Nexperia USA Inc.
SKU: PSMN013-100PS,127
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN013-100PS,127

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: PSMN013-100PS,127.pdf

Description:: MOSFET N-CH 100V 68A TO220AB

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Product details

Overview

PSMN013-100PS from Nexperia is an N-channel standard-level MOSFET in TO-220AB (SOT78) package, rated for 100 V drain-source voltage, 13.9 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, 68 A continuous drain current at T_mb = 25 °C, and qualified to 175 °C junction temperature. It serves as a high-current power switch in industrial DC-DC converters and server power supplies.

For engineers reviewing the PSMN013-100PS datasheet, PSMN013-100PS pinout, PSMN013-100PS application, or PSMN013-100PS equivalent, key selection criteria include its 100 V V_DS, low 13.9 mΩ on-resistance at 25 °C, 170 W total power dissipation at T_mb = 25 °C, robust 128 mJ unclamped avalanche energy, and TO-220AB thermal performance with R_th(j-mb) = 0.5 K/W typical.

Technical Context

This MOSFET employs planar silicon technology optimized for standard gate drive (V_GS = 10 V), delivering low conduction loss and enhanced dynamic avalanche ruggedness. Its gate threshold voltage ranges from 2 V to 4.6 V across -55 °C to 175 °C, enabling reliable turn-on under industrial temperature extremes.

The device features a mounting base (pin 2) electrically connected to the drain, supporting heatsink-integrated thermal management. Its dynamic characteristics-59 nC total gate charge, 17 nC gate-drain charge, and 25 ns rise time-support efficient switching in hard-switched topologies up to several hundred kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage before breakdown; defines use in 48 V and 60 V bus systems with margin.
R_DS(on)	13.9 mΩ @ V_GS = 10 V, T_j = 25 °C - Low conduction loss enabling <1 W I²R loss at 27 A, critical for high-efficiency power stages.
I_D	68 A @ T_mb = 25 °C - Continuous current rating limited by TO-220AB package thermal capacity, not die capability.
P_tot	170 W @ T_mb = 25 °C - Total power dissipation ceiling; requires active heatsinking for full-rated operation.
R_th(j-mb)	0.5 K/W typical - Thermal resistance from junction to mounting base; enables ~85 W dissipation with 42.5 K rise above heatsink temperature.
E_AS	128 mJ unclamped - Non-repetitive avalanche energy; supports robustness against inductive switching transients in motor drives and SMPS.
Q_G(tot)	59 nC - Total gate charge; determines gate driver current requirement (~1.2 A peak for 50 ns turn-on with 4.7 Ω external resistor).

Pinout & Package

TO-220AB (SOT78) plastic single-ended package with heatsink mounting base; 3 leads, 1 mounting hole; mounting base electrically connected to drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate (G)	Control electrode; requires ≥10 V for full enhancement; 1 Ω internal AC gate resistance limits ringing.
2	Drain (D) / Mounting Base (mb)	Main high-side current path; mounting base is electrically tied to drain, requiring isolation when heatsink is grounded.
3	Source (S)	Reference node for gate drive and current sensing; source-drain diode V_SD = 0.85 V @ 15 A, 25 °C.

Key Features

Feature	Design Value
Standard-level gate drive compatibility	Operates fully enhanced at V_GS = 10 V, eliminating need for level-shifting or bootstrap circuits in 12 V/15 V control systems.
Enhanced dynamic avalanche ruggedness	128 mJ E_AS rating ensures survivability during unclamped inductive turn-off events common in motor control and relay driving.
High-temperature junction qualification	Rated for continuous operation up to T_j = 175 °C, supporting reliability in enclosed industrial enclosures without forced air cooling.
Low R_DS(on) × Q_G figure of merit	13.9 mΩ × 59 nC = 0.82 nΩ·F - Balances conduction and switching losses for medium-frequency (<500 kHz) hard-switched applications.

Applications

DC-to-DC Converters

Server Power Supplies

Use Scenario: Primary-side switch in 48 V input, 12 V output isolated forward or half-bridge converter for telecom infrastructure.

IC Role / Device Role / Timing Role: High-side synchronous rectifier replacement; handles 68 A pulsed drain current with 100 V blocking.

Use Value: 13.9 mΩ R_DS(on) reduces conduction loss by >30% vs. comparable 20 mΩ MOSFETs, improving full-load efficiency by ~0.8% at 50 A.

Use Scenario: OR-ing FET in redundant 12 V intermediate bus architecture for datacenter servers.

IC Role / Device Role / Timing Role: Load switch controlling power path between parallel PSUs; operates in linear region during current balancing.

Use Value: 175 °C T_j rating and 170 W P_tot support sustained 40 A operation with minimal derating in high-ambient server chassis.

Motor Control

Load Switching

Use Scenario: Half-bridge high-side switch in 24 V brushed DC motor driver for industrial automation actuators.

IC Role / Device Role / Timing Role: Power switch subjected to inductive kickback; must withstand repetitive avalanche stress during PWM commutation.

Use Value: 128 mJ E_AS enables reliable operation without snubbers in 500 W motor drives, reducing BOM count and board space.

Use Scenario: Main power disconnect switch for programmable logic controller (PLC) I/O module with 24 V DC field power.

IC Role / Device Role / Timing Role: Solid-state replacement for electromechanical relay; switched at <1 Hz with high inrush current tolerance.

Use Value: 272 A peak drain current (I_DM) accommodates 10× inrush of capacitive loads, eliminating contact welding failure mode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N10F7	100 V, 110 A, 9.5 mΩ @ 10 V, TO-220FP package; lower R_DS(on) but higher Q_G (85 nC); no mounting base isolation.	Higher current handling but requires larger heatsink due to FP package's higher R_th(j-a); unsuitable where mounting base must be isolated.	Select when max current >68 A is required and heatsink isolation is not needed.
IRF540NPBF	100 V, 33 A, 44 mΩ @ 10 V, TO-220; older process, higher R_DS(on), lower E_AS (55 mJ), no 175 °C rating.	Limited to lower-power 24 V systems; insufficient avalanche margin for motor control; derates significantly above 100 °C ambient.	Select only for cost-sensitive, non-critical 24 V load switching where 175 °C operation is unnecessary.

Compared with STP110N10F7, PSMN013-100PS offers superior thermal interface via isolated mounting base and better avalanche ruggedness, while IRF540NPBF trades performance for legacy compatibility and lower cost in non-demanding applications.

Availability

PSMN013-100PS is available at Aetrix Electronics and suitable for industrial motor control, server power supply design, DC-DC converter development, and programmable logic controller (PLC) load switching requiring stable component supply and long-term manufacturability.

Supply support for PSMN013-100PS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs, ESD protection, and logic solutions.

This device belongs to Nexperia's standard-level power MOSFET product line, engineered for industrial and communications equipment demanding robust thermal performance, avalanche tolerance, and compatibility with conventional 10 V gate drivers.

FAQ

Is PSMN013-100PS suitable for automotive applications?

No. The datasheet explicitly states this part is not automotive-qualified. It lacks AEC-Q101 stress testing, automotive-specific PPAP documentation, and guaranteed operation over -40 °C to +150 °C case temperature. Use only in industrial, computing, or communications equipment per its 175 °C junction rating and industrial qualification scope.

What is the maximum gate-source voltage rating for safe operation?

The absolute maximum V_GS is ±20 V. Operation beyond this risks permanent gate oxide damage. For reliable long-term use, keep V_GS within -12 V to +15 V under transient conditions, and limit steady-state drive to 10 V for standard-level enhancement. Gate driver output impedance must be low enough to prevent ringing-induced overshoot.

How does the mounting base connection affect PCB layout?

The mounting base (pin 2) is internally connected to the drain. When using a grounded heatsink, electrical isolation between heatsink and PCB ground plane is mandatory-typically achieved with mica or ceramic washers and shoulder washers. Failure to isolate causes short-circuit between drain and system ground, destroying the device and potentially downstream circuitry.

Can PSMN013-100PS replace a logic-level MOSFET in a 5 V gate drive circuit?

No. As a standard-level device, it requires ≥10 V V_GS for full enhancement. At 5 V, R_DS(on) rises sharply (>100 mΩ), causing excessive conduction loss and thermal runaway. It is incompatible with 3.3 V or 5 V microcontroller GPIO direct drive; a gate driver IC or level shifter is mandatory for proper operation.

PSMN013-100PS,127 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 68A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 13.9mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 59 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3195 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 170W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

PSMN013-100PS,127 FAQ

1.How can I place an order for PSMN013-100PS,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN013-100PS,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN013-100PS,127 reliable?

The price and inventory of PSMN013-100PS,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN013-100PS,127 is usually 5 days.

3.What payment methods are accepted for PSMN013-100PS,127?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN013-100PS,127 transactions.

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4.How is shipping managed for PSMN013-100PS,127?

PSMN013-100PS,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN013-100PS,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN013-100PS,127?

For technical support, including PSMN013-100PS,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN013-100PS,127 requirements.

6.How does Aetrix verify that PSMN013-100PS,127 is sourced from the original manufacturer or authorized distributors?

All PSMN013-100PS,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN013-100PS,127 meets industry standards.

7.What is the process for return or replacement of PSMN013-100PS,127?

All PSMN013-100PS,127 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN013-100PS,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN013-100PS,127 part is unused and in its original packaging.

Return procedure for PSMN013-100PS,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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