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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

NXP Semiconductors PSMN013-100XS,127

Name: PSMN013-100XS,127
Brand: NXP Semiconductors
SKU: PSMN013-100XS,127
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN013-100XS,127

Manufacturer:: NXP Semiconductors

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack, Isolated Tab

Datasheet:: PSMN013-100XS,127.pdf

Description:: MOSFET N-CH 100V 35.2A TO220F

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Product details

Overview

PSMN013-100XS from NXP Semiconductors is a standard-level N-channel MOSFET in TO-220F (SOT186A) package, rated for 100 V V_DS, 35.2 A continuous drain current at T_mb = 25 °C, and 10.8 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C. It features isolated mounting base, 2500 V_RMS isolation voltage, and 180 mJ non-repetitive avalanche energy - deployed in AC-to-DC power supplies and synchronous rectification stages.

For engineers reviewing the PSMN013-100XS datasheet, PSMN013-100XS pinout, PSMN013-100XS application, or PSMN013-100XS equivalent, key selection criteria include its 100 V breakdown rating, thermal resistance of 2.85 K/W (junction-to-mounting-base), isolated heatsink compatibility, and standard-level gate drive requirement (V_GS(th) = 2–4 V).

Technical Context

This MOSFET employs planar TrenchMOS technology optimized for high-efficiency switching in industrial and communications power systems. Its isolated TO-220F package enables direct heatsink mounting without insulating hardware, while the 10.8 mΩ R_DS(on) at 10 V gate drive supports low conduction loss in medium-power DC-DC and rectifier topologies.

The device exhibits robust avalanche ruggedness (180 mJ), fast switching with 17.5 nC Q_GD and 57.5 nC Q_G(tot), and stable threshold voltage (2–4 V) across -55 to 175 °C junction temperature range - enabling reliable operation in thermally demanding server PSU and motor control environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum drain-source blocking voltage; defines upper limit for input voltage in buck, flyback, or synchronous rectifier applications.
I_D (continuous)	35.2 A at T_mb = 25 °C - Continuous current capability under ideal heatsink conditions; derates to 24.9 A at T_mb = 100 °C.
R_DS(on)	10.8 mΩ (typ) at V_GS = 10 V, T_j = 25 °C - Low on-resistance minimizes conduction loss in high-current power stages.
Q_G(tot)	57.5 nC - Total gate charge determines driver strength requirement and switching loss trade-off in hard-switched converters.
R_th(j-mb)	2.85 K/W (typ) - Thermal resistance from junction to mounting base; enables precise heatsink sizing when mounted directly to chassis.
V_isol(RMS)	2500 V - Isolation voltage between mounting base and internal terminals; eliminates need for insulating pads in grounded heatsink designs.
E_DS(AL)S	180 mJ - Non-repetitive avalanche energy rating; provides margin against inductive switching transients in motor drives and SMPS.

Pinout & Package

PSMN013-100XS uses the TO-220F (SOT186A) plastic single-ended package with isolated heatsink mounting, 1 mounting hole, and 3 leads. The mounting base (mb) is electrically isolated from internal terminals and serves as the thermal interface.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires standard-level 10 V drive; V_GS(th) = 2–4 V ensures compatibility with 5 V/10 V logic and gate drivers.
2 (D)	Drain	Main high-side current path; connected to mounting base via internal isolation barrier; rated for 100 V blocking.
3 (S)	Source	Power return node; referenced to gate drive ground; source-drain diode supports synchronous rectification with 0.8–1.2 V forward drop.
mb (mounting base)	Isolated thermal pad	Electrically isolated heatsink interface; rated for 2500 V_RMS isolation; enables direct metal-to-metal thermal coupling without insulation.

Key Features

Feature	Design Value
Isolated TO-220F package	2500 V_RMS isolation between mounting base and terminals eliminates insulating hardware and reduces thermal resistance by ~15% vs. standard TO-220.
Low R_DS(on)	10.8 mΩ at 10 V drive enables <1.5 W conduction loss at 35 A, improving efficiency in 100–500 W server PSUs and industrial SMPS.
Avalanche ruggedness	180 mJ non-repetitive energy rating allows safe operation during unclamped inductive turn-off events in motor control and PFC circuits.
Standard-level gate drive	V_GS(th) = 2–4 V and 10 V turn-on threshold ensure compatibility with common 5 V/10 V microcontrollers and gate drivers without level-shifting.
High-temperature operation	Rated for T_j up to 175 °C and T_stg to 175 °C supports use in sealed enclosures and high-ambient industrial environments.

Applications

AC-to-DC Power Supplies	Server Power Supplies
Use Scenario: Primary-side switching in 300–500 W offline flyback or LLC resonant converters. IC Role / Device Role / Timing Role: High-voltage N-channel switch handling 100 V bus; driven by dedicated gate driver IC with 10 V output. Use Value: 10.8 mΩ R_DS(on) and 57.5 nC Q_G(tot) balance conduction and switching losses, achieving >92% efficiency at full load.	Use Scenario: Secondary-side synchronous rectification in 12 V/54 A VRM modules for CPU/GPU power delivery. IC Role / Device Role / Timing Role: Low-side synchronous rectifier controlled by dedicated SR controller; replaces Schottky diode. Use Value: 0.8–1.2 V V_SD and 10.8 mΩ R_DS(on) reduce forward loss by >60% vs. 45 V Schottky, lowering secondary-side temperature rise.
Motor Control	Synchronous Rectification
Use Scenario: Half-bridge high-side switch in 200–400 W BLDC motor inverters for HVAC blowers and industrial fans. IC Role / Device Role / Timing Role: N-channel high-side switch driven via bootstrap gate driver; operates with 100 V DC bus. Use Value: 180 mJ avalanche rating absorbs inductive kickback during PWM commutation, eliminating need for external clamping diodes.	Use Scenario: Output rectification in telecom DC-DC bricks (48 V input, 12 V/20 A output) using active clamp forward topology. IC Role / Device Role / Timing Role: Synchronous rectifier replacing 40 V Schottky; driven by transformer-coupled gate signal referenced to source. Use Value: Isolated mounting base allows direct attachment to shared heatsink with primary-side switches, simplifying thermal management.

AC-to-DC Power Supplies

Server Power Supplies

Use Scenario: Primary-side switching in 300–500 W offline flyback or LLC resonant converters.

IC Role / Device Role / Timing Role: High-voltage N-channel switch handling 100 V bus; driven by dedicated gate driver IC with 10 V output.

Use Value: 10.8 mΩ R_DS(on) and 57.5 nC Q_G(tot) balance conduction and switching losses, achieving >92% efficiency at full load.

Use Scenario: Secondary-side synchronous rectification in 12 V/54 A VRM modules for CPU/GPU power delivery.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier controlled by dedicated SR controller; replaces Schottky diode.

Use Value: 0.8–1.2 V V_SD and 10.8 mΩ R_DS(on) reduce forward loss by >60% vs. 45 V Schottky, lowering secondary-side temperature rise.

Motor Control

Synchronous Rectification

Use Scenario: Half-bridge high-side switch in 200–400 W BLDC motor inverters for HVAC blowers and industrial fans.

IC Role / Device Role / Timing Role: N-channel high-side switch driven via bootstrap gate driver; operates with 100 V DC bus.

Use Value: 180 mJ avalanche rating absorbs inductive kickback during PWM commutation, eliminating need for external clamping diodes.

Use Scenario: Output rectification in telecom DC-DC bricks (48 V input, 12 V/20 A output) using active clamp forward topology.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing 40 V Schottky; driven by transformer-coupled gate signal referenced to source.

Use Value: Isolated mounting base allows direct attachment to shared heatsink with primary-side switches, simplifying thermal management.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N10F7	100 V, 110 A, 7.5 mΩ R_DS(on); TO-220FP package (non-isolated); higher current but larger die size and gate charge (95 nC).	Requires insulating pad for heatsink mounting; better suited for high-current, lower-frequency (<100 kHz) applications due to higher Q_G.	Select STP110N10F7 only when higher current headroom and lower R_DS(on) outweigh thermal isolation needs and gate driver capability.
IRF540NPBF	100 V, 33 A, 44 mΩ R_DS(on); TO-220 package (non-isolated); lower cost but significantly higher conduction loss and no avalanche rating.	Lacks isolation and avalanche ruggedness; unsuitable for unclamped inductive loads or direct heatsink mounting without insulation.	Choose IRF540NPBF only for low-cost, low-power (<100 W), non-isolated, non-avalanche-critical applications where thermal performance is secondary.

Compared with STP110N10F7 and IRF540NPBF, PSMN013-100XS delivers optimal balance of isolation, avalanche ruggedness, and mid-range R_DS(on) for thermally constrained industrial power stages - making it preferred for server PSUs and motor drives where reliability and heatsink integration matter more than peak current or lowest possible on-resistance.

Availability

PSMN013-100XS is available at Aetrix Electronics and suitable for AC-to-DC power supply equipment, motor control systems, and server power supplies requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing.

Supply support for PSMN013-100XS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT applications.

The PSMN013-100XS belongs to NXP's TrenchMOS family of discrete power MOSFETs, engineered for high-efficiency, high-reliability switching in industrial power conversion and motor control systems operating up to 175 °C junction temperature.

FAQ

What is the maximum junction temperature rating for PSMN013-100XS?

The PSMN013-100XS is rated for a maximum junction temperature (T_j) of 175 °C, as specified in Table 4 (Limiting Values) of the official NXP datasheet Rev. 2. This rating applies across its full operational voltage and current range and supports use in high-ambient industrial environments where thermal management is critical. The device maintains functional specifications up to this temperature, including V_GS(th) stability and R_DS(on) behavior.

Does PSMN013-100XS require a gate driver with level-shifting capability?

No, PSMN013-100XS does not require level-shifting gate drive. As a standard-level MOSFET, it has a gate-source threshold voltage (V_GS(th)) of 2–4 V and is fully enhanced at V_GS = 10 V. It is compatible with common 5 V and 10 V logic outputs and dedicated gate drivers such as the NCP3420 or UCC27531 without additional level-shifting circuitry.

Can PSMN013-100XS be mounted directly to a grounded heatsink?

Yes, PSMN013-100XS can be mounted directly to a grounded heatsink. Its TO-220F (SOT186A) package features an electrically isolated mounting base rated for 2500 V_RMS isolation (Table 6). This eliminates the need for insulating pads or sil-pads, reducing thermal resistance and simplifying mechanical assembly in space-constrained power modules.

What is the typical gate-drain charge (Q_GD) of PSMN013-100XS and why does it matter?

The typical gate-drain charge (Q_GD) of PSMN013-100XS is 17.5 nC, measured at V_GS = 10 V, I_D = 10 A, and V_DS = 50 V (Table 1). Q_GD directly influences Miller plateau duration and switching transition time - a lower value improves hard-switching efficiency and reduces susceptibility to dv/dt-induced false turn-on in high-frequency converters.

Is PSMN013-100XS qualified for automotive applications?

No, PSMN013-100XS is not automotive-qualified. Per Section 10.3 of the NXP datasheet, unless explicitly stated, NXP products are not qualified or tested to automotive standards (AEC-Q101, ISO 26262). The PSMN013-100XS is designed and qualified for industrial, communications, and domestic equipment - its qualification scope excludes automotive safety-critical systems.

PSMN013-100XS,127 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: -

Package/Case:: TO-220-3 Full Pack, Isolated Tab

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 35.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 13.9mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 57.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3195 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 48.4W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220F

PSMN013-100XS,127 FAQ

1.How can I place an order for PSMN013-100XS,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN013-100XS,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN013-100XS,127 reliable?

The price and inventory of PSMN013-100XS,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN013-100XS,127 is usually 5 days.

3.What payment methods are accepted for PSMN013-100XS,127?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN013-100XS,127 transactions.

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4.How is shipping managed for PSMN013-100XS,127?

PSMN013-100XS,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN013-100XS,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN013-100XS,127?

For technical support, including PSMN013-100XS,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN013-100XS,127 requirements.

6.How does Aetrix verify that PSMN013-100XS,127 is sourced from the original manufacturer or authorized distributors?

All PSMN013-100XS,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN013-100XS,127 meets industry standards.

7.What is the process for return or replacement of PSMN013-100XS,127?

All PSMN013-100XS,127 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN013-100XS,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN013-100XS,127 part is unused and in its original packaging.

Return procedure for PSMN013-100XS,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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