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Nexperia USA Inc. PSMN013-30YLC,115

Part No.:
PSMN013-30YLC,115
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
SC-100, SOT-669
Datasheet:
AetrixPSMN013-30YLC,115.pdf
Description:
MOSFET N-CH 30V 32A LFPAK56
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,438

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Product details

Overview

PSMN013-30YLC from Nexperia is a logic-level enhancement-mode N-channel MOSFET in LFPAK (SOT669) package, rated for 30 V VDS, 13.6 mΩ RDS(on) at VGS = 10 V and 10 A, optimized for 4.5 V gate drive using NextPower Superjunction technology, and qualified to 175 °C junction temperature for industrial DC-DC converters and synchronous buck regulators.

For engineers reviewing the PSMN013-30YLC datasheet, PSMN013-30YLC pinout, PSMN013-30YLC application, or PSMN013-30YLC equivalent, this device delivers ultra-low QG (4 nC), QGD (1.2 nC), and QOSS (3.3 nC) - critical for high-efficiency switching in compact power stages with low gate-drive voltage headroom.

Technical Context

This MOSFET employs Nexperia's NextPower Superjunction architecture to achieve low on-resistance and minimized switching losses at logic-level gate voltages (4.5 V). Its thermal resistance Rth(j-mb) is 5.66 K/W, enabling high-power dissipation via the exposed mounting base (drain-connected) in thermally constrained layouts.

The device features a robust source-drain diode with VSD = 0.86 V at 10 A and fast reverse recovery (trr = 16 ns, Qr = 6 nC), supporting synchronous rectification and hard-switched topologies without external Schottky supplementation.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 30 V - Maximum drain-source blocking voltage; defines safe operation in 24 V nominal bus systems with transient margin.
RDS(on) 13.6 mΩ @ VGS = 10 V, ID = 10 A, Tj = 25 °C - Enables <1.4 W conduction loss at 32 A continuous current under ideal thermal conditions.
QG(tot) 4 nC @ VGS = 4.5 V - Reduces gate driver power demand and enables high-frequency PWM (>1 MHz) with minimal drive-stage complexity.
QGD 1.2 nC - Low Miller charge minimizes switching instability and improves dv/dt immunity in high-side configurations.
tr/tf 9.9 ns / 6.2 ns - Fast edge rates support efficient zero-voltage switching (ZVS) transition design and reduce dead-time losses.
Rth(j-mb) 5.66 K/W - Thermal path directly from die to PCB copper mount enables >20 W sustained power handling with 4-layer board and 20 cm² 2-oz copper pad.
VGS(th) 1.68 V typ - Ensures reliable turn-on with standard 3.3 V or 5 V microcontroller GPIOs without level-shifting.

Pinout & Package

LFPAK (SOT669) package: plastic single-ended surface-mounted 4-lead package with exposed metal mounting base (drain-connected) for low-inductance, high-current routing and enhanced thermal transfer.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3 - S Source Three parallel source terminals minimize source inductance and improve current sharing in high-di/dt applications like synchronous buck output stage.
4 - G Gate Single gate input with low RG (2.12 Ω typ); optimized for direct drive from low-side gate drivers or microcontroller outputs.
Mounting Base - D Drain Exposed copper pad electrically connected to drain; serves as primary thermal and high-current path - must be soldered to large PCB copper area.

Key Features

Feature Design Value
Logic-level gate drive compatibility Turns fully on at VGS = 4.5 V (RDS(on) = 14.4 mΩ typ), eliminating need for dedicated gate drivers in 5 V or 3.3 V control systems.
NextPower Superjunction technology Delivers 30 % lower RDS(on) × QG figure-of-merit vs. conventional trench MOSFETs - directly improving system efficiency at light and full load.
175 °C qualified junction rating Enables operation in sealed industrial enclosures or high-ambient environments without derating below 100 % ID at Tmb ≤ 100 °C.
Ultra-low QOSS 3.3 nC - Reduces energy loss during turn-off and improves light-load efficiency in resonant and soft-switching topologies.

Applications

DC-DC Converter Primary Switch Synchronous Buck Regulator High-Side Switch

Use Scenario: 12 V–24 V input, 3.3 V/15 A output step-down converter in telecom power supply.

IC Role / Device Role: High-side main switching element in synchronous buck topology, driven by integrated controller with 4.5 V gate output.

Use Value: 13.6 mΩ RDS(on) and 4 nC QG enable >94 % peak efficiency at 500 kHz switching frequency with minimal heatsinking.

Use Scenario: Point-of-load regulator on server motherboard delivering 1.2 V @ 60 A to CPU core.

IC Role / Device Role: High-side switch paired with low-side MOSFET; operates with 100 ns dead time and 1 MHz PWM.

Use Value: Low QGD (1.2 nC) and fast tf (6.2 ns) suppress shoot-through risk and reduce cross-conduction losses during transitions.

Industrial Load Switch Hot-Swap Controller Back-End FET

Use Scenario: 24 V PLC I/O module with programmable 5 A load switching per channel.

IC Role / Device Role: Single-pole load switch controlled by microcontroller GPIO; handles inrush and steady-state current.

Use Value: 32 A continuous ID rating and 130 A pulsed IDM allow safe handling of 10× capacitor inrush without SOA violation.

Use Scenario: 48 V intermediate bus hot-swap circuit protecting downstream FPGA and memory banks.

IC Role / Device Role: Main pass FET in active OR-ing/hot-swap IC-controlled configuration with current limiting and fault reporting.

Use Value: Avalanche ruggedness (7 mJ unclamped) and 175 °C Tj rating ensure survivability during line transients and overcurrent events without external clamping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
Infineon IPP016N04L 40 V VDS, 1.6 mΩ RDS(on) @ 10 V, TO-252 package, higher QG (12 nC) Higher voltage rating but larger footprint and slower switching; better for 36 V systems, worse for space-constrained 24 V designs Select when 40 V blocking margin is required and thermal mass allows TO-252 mounting; avoid if gate drive is limited to 4.5 V only.
Vishay SI7157DP 30 V VDS, 12.5 mΩ RDS(on) @ 10 V, PowerPAK SO-8, QG = 6.5 nC, no 175 °C qualification Lower RDS(on) but unqualified above 150 °C; lacks avalanche rating and industrial temp validation Acceptable for commercial-grade 24 V converters with ambient <85 °C; not recommended for sealed industrial enclosures or extended lifetime requirements.

Compared with IPP016N04L and SI7157DP, PSMN013-30YLC uniquely balances 4.5 V drive capability, 175 °C qualification, and ultra-low QG/QGD in a thermally superior LFPAK package - making it optimal for high-reliability, high-density industrial power stages where gate drive voltage and thermal headroom are constrained.

Availability

PSMN013-30YLC is available at Aetrix Electronics and suitable for DC-DC converters, synchronous buck regulators, and industrial load switching requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for production ramp-up.

Supply support for PSMN013-30YLC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs, ESD protection, and logic solutions.

This part belongs to Nexperia's NextPower Superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density switched-mode power supplies operating at 4.5 V gate drive and elevated ambient temperatures.

FAQ

What is the maximum continuous drain current at 100 °C mounting base temperature?

At Tmb = 100 °C, the continuous drain current is 23 A (per Table 4 Limiting Values). This derating reflects thermal constraints of the LFPAK package and ensures junction temperature remains ≤175 °C under steady-state conduction with proper PCB copper area and airflow.

Can PSMN013-30YLC be used in avalanche mode?

Yes - it is rated for non-repetitive drain-source avalanche energy of 7 mJ (VGS = 10 V, ID = 32 A, Vsup ≤ 30 V, RGS = 50 Ω, unclamped), verified per Figure 3. This supports robustness against inductive switching transients in relay drivers or motor control H-bridges.

Is the mounting base electrically isolated from the drain?

No - the mounting base is internally connected to the drain terminal (see Table 2 Pinning Information and Figure 19 Package Outline). It must be routed as a high-voltage, high-current node and thermally coupled to a dedicated PCB copper pour tied to the drain net.

How does its RDS(on) change with temperature?

RDS(on) increases with junction temperature: from 11.6 mΩ at 25 °C to 22.1 mΩ at 150 °C (VGS = 10 V, ID = 10 A), per Table 6. This positive TC enables current sharing in paralleled configurations and improves short-circuit tolerance.

PSMN013-30YLC,115 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
SC-100, SOT-669
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
32A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
13.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
1.95V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
8.3 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
521 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
26W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
LFPAK56, Power-SO8

PSMN013-30YLC,115 FAQ

1.How can I place an order for PSMN013-30YLC,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN013-30YLC,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN013-30YLC,115 reliable?

The price and inventory of PSMN013-30YLC,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN013-30YLC,115 is usually 5 days.

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PSMN013-30YLC,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN013-30YLC,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN013-30YLC,115?

For technical support, including PSMN013-30YLC,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN013-30YLC,115 requirements.

6.How does Aetrix verify that PSMN013-30YLC,115 is sourced from the original manufacturer or authorized distributors?

All PSMN013-30YLC,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN013-30YLC,115 meets industry standards.

7.What is the process for return or replacement of PSMN013-30YLC,115?

All PSMN013-30YLC,115 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN013-30YLC,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN013-30YLC,115 part is unused and in its original packaging.

Return procedure for PSMN013-30YLC,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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