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Nexperia USA Inc. PSMN013-40VLDX
- Part No.:
- PSMN013-40VLDX
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-1205, 8-LFPAK56
- Datasheet:
-
PSMN013-40VLDX.pdf
- Description:
- MOSFET 2N-CH 40V 42A LFPAK56D
- Quantity:
- Payment:
- Shipping:
Inventory:5,933
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Product details
Overview
PSMN013-40VLD from Nexperia is a dual N-channel logic-level MOSFET in LFPAK56D (SOT1205) package, configured as an integrated half-bridge with internal source1–drain2 connection. It delivers 40 V VDS, 13 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C, 42 A continuous drain current at Tmb = 25 °C, and is optimized for high-frequency PWM motor drive in space-constrained handheld power tools.
For engineers reviewing the PSMN013-40VLD datasheet, PSMN013-40VLD pinout, PSMN013-40VLD application, or PSMN013-40VLD equivalent, this device supports critical design decisions in brushed/BLDC half-bridge inverters where low conduction loss, fast switching, thermal robustness, and PCB layout simplification are required.
Technical Context
This device integrates two N-channel NextPowerS3 MOSFETs in a monolithic LFPAK56D package with fixed internal interconnect: S1 tied to D2, forming a pre-routed half-bridge topology. Its gate threshold voltage (1.5–2.2 V) enables direct drive from 3.3 V or 5 V logic controllers without level-shifting.
Thermal performance is defined by Rth(j-mb) = 3.23 K/W and normalized power derating down to 0% at Tmb = 200 °C. Avalanche ruggedness is rated at EDS(AL) = 10.6 mJ (non-repetitive) and IAS = 39.9 A, supporting robust operation under inductive load switching stress.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage for half-bridge high-side and low-side switches in 24 V DC bus systems. |
| RDS(on) | 11.35–13.6 mΩ @ VGS = 10 V, Tj = 25 °C - Enables <1.4 W conduction loss at 10 A, critical for thermally constrained motor drivers. |
| ID (cont) | 42 A @ Tmb = 25 °C - Validated continuous current capability under ideal heatsinking; limited by PCB copper area and thermal interface in practice. |
| QGD | 0.6–4.2 nC - Low gate-drain charge minimizes Miller-induced shoot-through risk and supports >100 kHz PWM switching efficiency. |
| Qr | 16.2 nC - Confirmed reverse recovery charge for body diode commutation in synchronous rectification and freewheeling paths. |
| Rth(j-mb) | 3.23 K/W - Junction-to-mounting-base thermal resistance enables direct thermal coupling to copper pour or heatsink, reducing system thermal overhead. |
| EDS(AL) | 10.6 mJ - Non-repetitive avalanche energy rating ensures single-pulse inductive turn-off survivability in motor phase-leg fault conditions. |
Pinout & Package
LFPAK56D (SOT1205) is a 8-lead, single-ended surface-mount copper-clip package with gull-wing leads, optimized for high-current density and low parasitic inductance. Mounting base (exposed copper die pad) provides primary thermal path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | S2 | Source terminal of low-side FET - connects to system ground or current-sense shunt in half-bridge output stage. |
| 2 | G2 | Gate of low-side FET - driven by low-side gate driver; requires <5 Ω external series resistance for controlled turn-on/off. |
| 3 | S1 | Source of high-side FET - internally bonded to D2; forms half-bridge midpoint node (phase output). |
| 4 | G1 | Gate of high-side FET - requires bootstrap or isolated gate drive due to floating source reference. |
| 5, 6 | D1 | Drain of high-side FET - connects to positive DC bus (e.g., 24 V); shared pins reduce package inductance. |
| 7, 8 | S1/D2 | Internally connected node - ties high-side source to low-side drain; defines fixed half-bridge topology and eliminates external trace routing. |
Key Features
| Feature | Design Value |
|---|---|
| LFPAK56D half-bridge integration | Eliminates 2–3 external interconnect traces and one solder joint per FET, reducing PCB layer count and layout error risk in motor control modules. |
| NextPowerS3 silicon technology | Delivers 26.4 mΩ RDS(on) at Tj = 175 °C - maintains <2× room-temp resistance across full industrial temperature range. |
| Repetitive avalanche rated | Validated for repeated inductive switching stress without degradation - enables reliable operation in brushed DC motor commutation. |
| Gull-wing lead form | Supports automated optical inspection (AOI) and high-yield reflow soldering on standard SMT lines without tombstoning or voiding. |
| Copper clip construction | Reduces package resistance by >30% vs. wire-bonded equivalents - improves current sharing between parallel dies and thermal cycling reliability. |
Applications
| Handheld Power Tools | Brushless DC Motor Drive |
|---|---|
|
Use Scenario: Compact cordless drill/driver with 18–24 V battery input and integrated half-bridge inverter. IC Role / Device Role / Timing Role: Dual MOSFET serves as phase-leg switch; high-side and low-side FETs alternate conduction under 20–50 kHz PWM to control motor torque/speed. Use Value: 13 mΩ RDS(on) and 42 A rating enable >95% inverter efficiency at 10 A load, extending battery runtime while maintaining sub-10 mm² board footprint. |
Use Scenario: Fan or pump controller using trapezoidal commutation with discrete gate drivers. IC Role / Device Role / Timing Role: Half-bridge topology provides synchronized high/low-side switching for each motor phase; internal S1–D2 connection enforces correct dead-time topology. Use Value: Low QGD (2.1 nC typ.) and fast tf (6.5 ns) minimize switching losses during 30 kHz commutation, reducing heat sink requirements. |
| DC-DC Buck Converter | LED Lighting Driver |
|
Use Scenario: 24 V input, 5–12 V output synchronous buck regulator for industrial sensor power rails. IC Role / Device Role / Timing Role: High-side FET acts as main switch; low-side FET replaces Schottky diode as synchronous rectifier in continuous conduction mode. Use Value: Body diode Qr = 16.2 nC and VSD = 0.84 V enable efficient freewheeling with <0.5 W conduction loss at 10 A, improving conversion efficiency over discrete solutions. |
Use Scenario: Constant-current LED driver for architectural lighting with PWM dimming up to 20 kHz. IC Role / Device Role / Timing Role: Low-side FET operates as PWM-controlled current sink; high-side FET remains off or used for reverse polarity protection. Use Value: Logic-level VGS(th) (1.85 V typ.) allows direct microcontroller GPIO drive without buffer, simplifying BOM and enabling rapid prototyping. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar half-bridge MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IRFH7107TRPBF | Single-die dual N-channel in PQFN 5x6; RDS(on) = 12.5 mΩ @ 10 V but no internal S1–D2 connection - requires external trace routing. | Requires additional PCB routing and gate driver isolation for half-bridge use; higher layout complexity and inductance. | Select when custom half-bridge topology or independent FET control is needed; not drop-in for PSMN013-40VLD's integrated configuration. |
| ON Semiconductor NTMFS4C09NT1G | Single N-channel 40 V MOSFET in SO-8FL; RDS(on) = 9.5 mΩ @ 10 V but no dual or half-bridge integration - two devices required. | Doubles component count and PCB area; lacks internal interconnect, increasing loop inductance and EMI risk. | Choose only if existing design uses discrete SO-8FL footprints and thermal constraints allow separate mounting. |
Compared with IRFH7107TRPBF and NTMFS4C09NT1G, PSMN013-40VLD reduces system-level bill-of-materials, layout effort, and parasitic inductance through monolithic half-bridge integration - delivering measurable improvements in power density, EMI margin, and production yield for space-constrained motor drives.
Availability
PSMN013-40VLD is available at Aetrix Electronics and suitable for handheld power tools, brushless DC motor drives, and DC-DC buck converters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for PSMN013-40VLD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in MOSFETs, ESD protection, and automotive-qualified components.
PSMN013-40VLD belongs to Nexperia's NextPowerS3 logic-level MOSFET family, engineered specifically for high-efficiency, high-power-density motor control and power conversion in consumer and industrial equipment.
FAQ
What gate drive voltage is required for full enhancement?
PSMN013-40VLD achieves specified RDS(on) with VGS ≥ 10 V, but operates as a logic-level device with guaranteed turn-on at VGS = 4.5 V (RDS(on) ≤ 16.9 mΩ). For minimal conduction loss in motor drive, 10 V gate drive is recommended; 5 V is sufficient for many 3.3 V MCU interfaces with acceptable efficiency trade-off.
Can the internal S1–D2 connection be bypassed or modified?
No - the S1–D2 connection is a permanent internal bond within the LFPAK56D package and cannot be disconnected or reconfigured. This fixed half-bridge topology is intentional for simplified motor control layout; use discrete MOSFETs if independent high-side/low-side control is required.
How is thermal performance measured - junction-to-case or junction-to-ambient?
Thermal data is specified as Rth(j-mb) = 3.23 K/W - junction-to-mounting-base resistance - measured with the exposed copper pad soldered to a 1-inch² 2-oz copper plane. This reflects real-world PCB thermal coupling, not abstract case metrics; ambient performance depends on board-level heatsinking design.
Is PSMN013-40VLD qualified for automotive applications?
No - PSMN013-40VLD is not AEC-Q101 qualified and is intended for industrial, consumer, and computing applications. Nexperia explicitly states in its legal disclaimers that non-automotive qualified products are unsuitable for safety-critical or life-support systems; automotive designs require verified AEC-compliant alternatives.
PSMN013-40VLDX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOT-1205, 8-LFPAK56
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Half Bridge)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 40V
- Current - Continuous Drain (Id) @ 25°C:
- 42A (Ta)
- Rds On (Max) @ Id, Vgs:
- 13.6mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 19.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1160pF @ 25V
- Power - Max:
- 46W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK56D
PSMN013-40VLDX FAQ
1.How can I place an order for PSMN013-40VLDX through Aetrix?
Please submit a Request for Quotation (RFQ) for PSMN013-40VLDX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PSMN013-40VLDX reliable?
The price and inventory of PSMN013-40VLDX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN013-40VLDX is usually 5 days.
3.What payment methods are accepted for PSMN013-40VLDX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN013-40VLDX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PSMN013-40VLDX?
PSMN013-40VLDX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PSMN013-40VLDX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PSMN013-40VLDX?
For technical support, including PSMN013-40VLDX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN013-40VLDX requirements.
6.How does Aetrix verify that PSMN013-40VLDX is sourced from the original manufacturer or authorized distributors?
All PSMN013-40VLDX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN013-40VLDX meets industry standards.
7.What is the process for return or replacement of PSMN013-40VLDX?
All PSMN013-40VLDX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN013-40VLDX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PSMN013-40VLDX part is unused and in its original packaging.
Return procedure for PSMN013-40VLDX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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