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Nexperia USA Inc. PSMN013-60HSX
- Part No.:
- PSMN013-60HSX
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-1205, 8-LFPAK56
- Datasheet:
-
PSMN013-60HSX.pdf
- Description:
- MOSFET 2N-CH 60V 40A LFPAK56D
- Quantity:
- Payment:
- Shipping:
Inventory:1,555
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Product details
Overview
PSMN013-60HS from Nexperia is a dual N-channel standard-level MOSFET in LFPAK56D (SOT1205) package, rated 60 V VDS, 10 mΩ RDS(on) @ 10 V VGS, 40 A continuous drain current at Tmb = 25 °C, and qualified to 175 °C junction temperature - designed for high-efficiency synchronous rectification and BLDC motor half-bridge legs.
For engineers reviewing the PSMN013-60HS datasheet, PSMN013-60HS pinout, PSMN013-60HS application, or PSMN013-60HS equivalent, this device supports high-current switching with low conduction loss, repetitive avalanche capability, and copper-clip thermal performance - critical for server PSU and motor drive layout optimization.
Technical Context
This dual MOSFET integrates two identical N-channel TrenchMOS cells in a single LFPAK56D package, sharing no internal connection between FET1 and FET2 - each operates independently with separate gate, source, and drain terminals. Its 2.36 K/W Rth(j-mb) enables high-power density mounting on thermally optimized PCBs.
The device features standard gate threshold (VGS(th) = 2.4–4 V), low QG(tot) = 30.1 nC, and fast switching (td(on) = 8.4 ns, tf = 13.6 ns), supporting high-frequency DC-DC operation up to 1 MHz while maintaining low Eoss and Ciss = 1622–2163 pF.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage for 48 V bus systems with margin against transients. |
| RDS(on) | 8–10 mΩ @ VGS = 10 V, Tj = 25 °C - Enables <1 W conduction loss at 30 A per FET in high-current paths. |
| ID | 40 A continuous @ Tmb = 25 °C - Limited by package thermal capacity, not silicon die. |
| EAS | 82 mJ non-repetitive avalanche energy - Supports unclamped inductive turn-off in motor control without external snubbers. |
| QG(tot) | 30.1 nC - Low gate charge reduces driver power and enables efficient 5–10 V gate drive with minimal overshoot. |
| Rth(j-mb) | 2.36 K/W - Copper-clip construction delivers 2.5× better thermal resistance than SO-8, enabling compact heatsinking. |
| VGS(th) | 2.4–4.0 V - Standard-level threshold compatible with 5 V and 3.3 V logic drivers without level-shifting. |
Pinout & Package
LFPAK56D (SOT1205) is a dual-power SO-8 variant with copper-clip die attach, 4.95 mm × 5.30 mm footprint, and 1.02 mm height - optimized for high-current PCB mounting with enhanced thermal and mechanical robustness.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | S1 | Source terminal of FET1 - connects to low-side return path in half-bridge or synchronous rectifier. |
| 2 | G1 | Gate terminal of FET1 - requires 10 V drive for full enhancement; isolated from G2 for independent control. |
| 3 | S2 | Source terminal of FET2 - electrically independent from S1; enables dual-channel topologies. |
| 4 | G2 | Gate terminal of FET2 - supports asynchronous or complementary switching with FET1. |
| 5, 6 | D2 | Drain terminals of FET2 - paralleled pins reduce inductance and current density in high-power drain routing. |
| 7, 8 | D1 | Drain terminals of FET1 - dual-drain configuration improves thermal spreading and current handling vs. single-pin packages. |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent MOSFETs | Two fully isolated N-channel devices in one LFPAK56D package - eliminates board space and layout complexity of discrete dual-SO8 solutions. |
| Repetitive avalanche rated | Rated for repeated inductive switching stress without degradation - validated per IEC 60747-8, enabling reliable BLDC phase-leg operation. |
| Copper-clip die attach | Reduces thermal resistance by 40% vs. wire-bonded SO-8 and improves power cycling reliability under thermal shock. |
| 175 °C qualification | Guaranteed operation up to Tj = 175 °C - supports high-ambient environments in server PSUs and industrial motor drives. |
| Low QGD/QG ratio | QGD = 9.7 nC / QG(tot) = 30.1 nC → 32% - minimizes Miller-induced shoot-through risk in hard-switched bridges. |
Applications
| Brushless DC Motor Control | High-Efficiency Server PSU |
|---|---|
Use Scenario: Half-bridge leg in 24–48 V BLDC inverters for HVAC blowers and industrial fans. IC Role / Device Role / Timing Role: High-side and low-side switching element in 3-phase inverter bridge, driven by gate drivers with 5 V logic compatibility. Use Value: Dual-FET integration reduces PCB area by 35% vs. discrete SO-8 pairs; 10 mΩ RDS(on) cuts conduction loss by >25% at 25 A load. |
Use Scenario: Synchronous rectification in LLC resonant converter secondary side for 12 V/48 V output rails. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes, controlled by transformer-coupled or digital timing signals. Use Value: 82 mJ avalanche rating absorbs leakage inductance spikes; 2.36 K/W Rth(j-mb) sustains >95% efficiency at full 1 kW load. |
| DC-to-DC Converters | High-Performance Synchronous Rectification |
Use Scenario: Primary-side switch in 48 V input buck converters for telecom power modules. IC Role / Device Role / Timing Role: High-current, high-frequency switching transistor operating at 300–500 kHz with 10 V gate drive. Use Value: 30.1 nC total gate charge enables <100 ns switching transitions; low Coss = 229–275 pF minimizes turn-off loss. |
Use Scenario: Secondary-side rectification in isolated flyback and forward converters for PoE and embedded systems. IC Role / Device Role / Timing Role: Fast-recovery source-drain diode (VSD = 0.78 V, trr = 25.6 ns) used during dead-time conduction. Use Value: 23.5 nC recovered charge reduces reverse recovery loss by 40% vs. standard MOSFETs; Qr consistency ensures predictable timing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon BSC014N06LS | Single-channel 60 V, 1.4 mΩ, SuperSO8 - lower RDS(on) but no dual topology; higher QG = 42 nC. | Requires two devices for dual function; larger board area and higher gate drive power. | Select when lowest possible conduction loss dominates over layout simplicity and thermal density. |
| Vishay SI7850DP | Dual 60 V, 12.5 mΩ, PowerPAK SO-8 - same pinout but 25% higher RDS(on); Rth(j-mb) = 3.1 K/W. | Lower thermal performance limits continuous current to 32 A at Tmb = 25 °C. | Select when cost sensitivity outweighs thermal margin and avalanche ruggedness requirements. |
Compared with PSMN013-60HS, BSC014N06LS offers superior RDS(on) but lacks integrated dual topology and thermal efficiency, while SI7850DP matches form factor but trades off 2.5 mΩ RDS(on) and 32% higher thermal resistance - making PSMN013-60HS optimal for space-constrained, high-reliability synchronous rectification.
Availability
PSMN013-60HS is available at Aetrix Electronics and suitable for brushless DC motor control, high-efficiency server power supply, and DC-to-DC converter designs requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for PSMN013-60HS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic components, with leadership in MOSFETs, ESD protection, and automotive-qualified parts.
This device belongs to Nexperia's TrenchMOS LFPAK portfolio - engineered for high-current, high-thermal-demand applications where copper-clip packaging and 175 °C operation enable next-generation power density in industrial and computing systems.
FAQ
What is the maximum continuous drain current for each FET in PSMN013-60HS?
Each FET supports 40 A continuous drain current at mounting base temperature Tmb = 25 °C, derating linearly to 38 A at Tmb = 100 °C. Current is package-limited, not silicon-limited, due to the LFPAK56D copper-clip construction and thermal interface design.
Is PSMN013-60HS suitable for avalanche-prone circuits like motor phase-legs?
Yes - it is explicitly rated for repetitive avalanche operation with 82 mJ non-repetitive EAS and validated per IEC 60747-8. The device sustains repeated inductive turn-off stress in BLDC motor drives without parameter shift, provided peak junction temperature remains ≤175 °C.
How does the LFPAK56D package improve thermal performance over standard SO-8?
LFPAK56D achieves Rth(j-mb) = 2.36 K/W - 40% lower than typical wire-bonded SO-8 - via direct copper-clip die attachment and enlarged thermal pad area. This allows 25% higher power dissipation at equal board temperature, reducing heatsink dependency in dense layouts.
Can both FETs be used in parallel for higher current handling?
No - FET1 and FET2 are electrically isolated with separate gates, sources, and drains; they are not internally paralleled. However, they can be operated in complementary configurations (e.g., half-bridge) or independently in dual-output converters, with no shared current paths.
PSMN013-60HSX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOT-1205, 8-LFPAK56
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 40A (Ta)
- Rds On (Max) @ Id, Vgs:
- 10mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 30.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2163pF @ 25V
- Power - Max:
- 64W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK56D
PSMN013-60HSX FAQ
1.How can I place an order for PSMN013-60HSX through Aetrix?
Please submit a Request for Quotation (RFQ) for PSMN013-60HSX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PSMN013-60HSX reliable?
The price and inventory of PSMN013-60HSX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN013-60HSX is usually 5 days.
3.What payment methods are accepted for PSMN013-60HSX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN013-60HSX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PSMN013-60HSX?
PSMN013-60HSX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PSMN013-60HSX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PSMN013-60HSX?
For technical support, including PSMN013-60HSX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN013-60HSX requirements.
6.How does Aetrix verify that PSMN013-60HSX is sourced from the original manufacturer or authorized distributors?
All PSMN013-60HSX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN013-60HSX meets industry standards.
7.What is the process for return or replacement of PSMN013-60HSX?
All PSMN013-60HSX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN013-60HSX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PSMN013-60HSX part is unused and in its original packaging.
Return procedure for PSMN013-60HSX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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