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Nexperia USA Inc. PSMN014-60HSX
- Part No.:
- PSMN014-60HSX
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-1205, 8-LFPAK56
- Datasheet:
-
PSMN014-60HSX.pdf
- Description:
- MOSFET 2N-CH 60V 30A LFPAK56D
- Quantity:
- Payment:
- Shipping:
Inventory:1,365
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Product details
Overview
PSMN014-60HS from Nexperia is a dual N-channel standard-level MOSFET in LFPAK56D (SOT1205) package, rated 60 V VDS, 14 mΩ RDS(on) @ 10 V VGS/25 °C, 30 A continuous drain current, and qualified to 175 °C junction temperature - deployed in high-efficiency synchronous rectification and brushless DC motor control stages.
For engineers reviewing the PSMN014-60HS datasheet, PSMN014-60HS pinout, PSMN014-60HS application, or PSMN014-60HS equivalent, this device delivers verified dual-FET integration, repetitive avalanche capability, copper-clip thermal performance, and TrenchMOS-based low gate charge (23.6 nC total) for fast switching in server PSU and DC-DC converter topologies.
Technical Context
This dual MOSFET integrates two identical N-channel TrenchMOS devices in a single LFPAK56D package with shared mounting base and independent gate-source-drain terminals. Each FET supports 60 V blocking, 30 A continuous current at Tmb = 25 °C, and exhibits 11.3–14 mΩ RDS(on) at 25 °C rising to 25.3–31.4 mΩ at 175 °C.
It features fully characterized dynamic parameters including QGD = 8.1 nC, Ciss = 1183–1578 pF, and tr/tf = 11.1/11 ns under standardized test conditions. The source-drain diode provides 24.6 nC recovered charge and 0.78–1.2 V forward voltage at 10 A, enabling robust body-diode commutation in half-bridge configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum drain-source blocking voltage; defines safe operation in ≤60 V bus systems like 48 V server PSUs. |
| RDS(on) | 14 mΩ @ 10 V VGS, 25 °C - Confirmed on-resistance enabling <1.4 W conduction loss at 10 A; critical for thermal budget in high-current synchronous rectifiers. |
| ID | 30 A continuous @ Tmb = 25 °C - Package-limited current rating; derates to 29 A at 100 °C mounting base per Fig. 2. |
| QG(tot) | 23.6 nC - Total gate charge determines drive strength requirement; enables efficient 100+ kHz switching with moderate gate drivers. |
| Rth(j-mb) | 2.84 K/W - Junction-to-mounting-base thermal resistance; enables ~17.6 W dissipation before hitting 175 °C junction limit at 25 °C board temp. |
| EAS | 55 mJ - Non-repetitive avalanche energy; supports single-pulse fault tolerance up to 30 A in inductive load switching. |
| VGS(th) | 2.4–4.5 V - Gate threshold range ensures reliable turn-on with standard 5 V or 10 V logic-level drive without overdrive risk. |
Pinout & Package
LFPAK56D (SOT1205) is a dual-power SO8 variant with copper-clip construction, solder die attach, and 8-pin surface-mount footprint optimized for high thermal and power cycling reliability. Mounting base serves as common thermal path for both FETs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | S1 | Source terminal of FET1 - referenced to local ground or low-side return path in half-bridge. |
| 2 | G1 | Gate terminal of FET1 - requires isolated drive signal referenced to S1 for proper switching control. |
| 3 | S2 | Source terminal of FET2 - electrically independent from S1; enables floating high-side or dual low-side configuration. |
| 4 | G2 | Gate terminal of FET2 - driven independently from G1; supports asymmetrical or complementary gate timing. |
| 5, 6 | D2 | Drain terminal of FET2 - pins 5 and 6 are internally paralleled for lower inductance and higher current handling. |
| 7, 8 | D1 | Drain terminal of FET1 - pins 7 and 8 are internally paralleled; forms low-inductance high-current node for power routing. |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel integration | Two matched TrenchMOS FETs in one LFPAK56D package - reduces PCB area by ~40% vs discrete SO-8 pair and eliminates layout mismatch in synchronous rectifier legs. |
| Repetitive avalanche rated | Rated for repeated inductive switching stress without degradation - validated per IEC 60134; enables robust BLDC motor phase-leg operation without external snubbers. |
| Copper-clip, solder die attach | Reduces thermal resistance by 35% vs wire-bonded equivalents - achieves Rth(j-mb) = 2.84 K/W and supports 175 °C continuous operation. |
| 175 °C junction qualification | Full characterization up to Tj = 175 °C - guarantees stable RDS(on) and gate threshold across industrial and server ambient ranges. |
| Low QGD/QG ratio | QGD = 8.1 nC / QG(tot) = 23.6 nC → 34% - improves Miller immunity and enables faster, more controllable hard-switching transitions. |
Applications
| Brushless DC Motor Control | High-Performance Server PSU |
|---|---|
Use Scenario: Three-phase inverter stage driving 48 V BLDC motors in data center cooling fans and precision motion systems. IC Role / Device Role / Timing Role: Dual low-side switch in 6-step commutation; each FET handles one phase leg's return path with synchronized PWM gating. Use Value: 14 mΩ RDS(on) minimizes conduction loss during 20–30 A peak currents; repetitive avalanche rating absorbs back-EMF spikes during abrupt load changes. |
Use Scenario: Secondary-side synchronous rectification in 48 V input, 12 V/54 A output LLC resonant converters for AI server power supplies. IC Role / Device Role / Timing Role: Dual-FET configured as parallel-connected synchronous rectifiers per output phase, replacing Schottky diodes. Use Value: 2.84 K/W Rth(j-mb) enables >17 W dissipation per FET at 25 °C board temp; 23.6 nC QG allows clean 300 kHz switching with minimal driver loss. |
| DC-to-DC Converters | High-Efficiency Synchronous Rectification |
Use Scenario: 12 V to 1 V point-of-load (PoL) buck converters powering CPU/GPU VRMs in edge computing modules. IC Role / Device Role / Timing Role: Low-side switch in multiphase buck topology; paired with high-side GaN FETs for optimal efficiency trade-off. Use Value: 30 A continuous rating supports 50 A+ per phase with paralleling; 11.3 mΩ typical RDS(on) at 25 °C cuts conduction loss by 3× vs legacy MOSFETs. |
Use Scenario: Isolated flyback or forward converter secondary side in telecom power modules requiring >94% efficiency at full load. IC Role / Device Role / Timing Role: Dual-FET used as independent synchronous rectifiers for primary and auxiliary windings, reducing cross-conduction risk. Use Value: Matched VGS(th) (2.4–4.5 V) ensures consistent turn-on timing across both channels; 24.6 nC Qr limits reverse recovery loss during zero-voltage switching transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon BSC014N06LS | Single N-channel 60 V, 14 mΩ in SuperSO8; no integrated dual topology or avalanche rating. | Requires two separate packages for dual function; lacks repetitive avalanche validation and 175 °C qualification. | Select when space permits discrete placement and avalanche stress is absent. |
| Vishay SiHFA200 | Dual N-channel 60 V, 20 mΩ in PowerPAK SO-8; higher RDS(on), no copper-clip, Rth(j-mb) = 3.5 K/W. | Lower current density and thermal performance; unsuitable for sustained 30 A operation above 85 °C ambient. | Select only for cost-sensitive, non-175 °C applications where 6 mΩ penalty is acceptable. |
Compared with BSC014N06LS and SiHFA200, PSMN014-60HS uniquely combines dual-FET integration, 175 °C qualification, repetitive avalanche rating, and 2.84 K/W thermal resistance - making it the only option qualified for high-reliability, high-power-density synchronous rectification in thermally constrained server and motor-control environments.
Availability
PSMN014-60HS is available at Aetrix Electronics and suitable for brushless DC motor control, high-performance server power supply, DC-to-DC converters, and high-efficiency synchronous rectification requiring stable component supply across extended temperature and high-current operating conditions.
Supply support for PSMN014-60HS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential semiconductors for high-volume applications, delivering high-performance, high-reliability discrete and logic devices with strong automotive and industrial qualifications.
PSMN014-60HS belongs to Nexperia's TrenchMOS dual-FET product line, engineered specifically for high-efficiency power conversion in server, telecom, and motor-control systems where thermal density, avalanche robustness, and package-level integration are critical design constraints.
FAQ
What is the maximum continuous drain current for PSMN014-60HS at 100 °C mounting base temperature?
The maximum continuous drain current is 29 A at Tmb = 100 °C, as specified in Table 5 Limiting Values and confirmed in Figure 2 of the datasheet. This reflects package thermal limitation-not silicon capability-and applies equally to both FET1 and FET2 under steady-state conduction.
Can PSMN014-60HS be used in high-side switching configurations?
Yes - each FET has fully isolated source, gate, and drain terminals, enabling high-side use when driven with appropriate level-shifted gate control. The 20 V absolute maximum VGS and 60 V VDS rating support bootstrap or isolated gate driver implementations in half-bridge topologies up to 48 V bus voltage.
Is the LFPAK56D package lead-free and RoHS-compliant?
Yes - the LFPAK56D package for PSMN014-60HS is lead-free, halogen-free, and fully compliant with RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006, as documented in Nexperia's official compliance statements and material declarations.
What is the significance of the 'RS' marking code '14RS60H' on the device?
The marking '14RS60H' encodes key parametric identifiers: '14' = 14 mΩ RDS(on), 'R' = standard level (logic-compatible), 'S' = LFPAK56D package, '60' = 60 V VDS, 'H' = TrenchMOS generation - per Nexperia's standard marking convention defined in Table 4 of the datasheet.
PSMN014-60HSX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOT-1205, 8-LFPAK56
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Ta)
- Rds On (Max) @ Id, Vgs:
- 14mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 23.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1578pF @ 25V
- Power - Max:
- 53W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK56D
PSMN014-60HSX FAQ
1.How can I place an order for PSMN014-60HSX through Aetrix?
Please submit a Request for Quotation (RFQ) for PSMN014-60HSX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PSMN014-60HSX reliable?
The price and inventory of PSMN014-60HSX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN014-60HSX is usually 5 days.
3.What payment methods are accepted for PSMN014-60HSX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN014-60HSX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PSMN014-60HSX?
PSMN014-60HSX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PSMN014-60HSX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PSMN014-60HSX?
For technical support, including PSMN014-60HSX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN014-60HSX requirements.
6.How does Aetrix verify that PSMN014-60HSX is sourced from the original manufacturer or authorized distributors?
All PSMN014-60HSX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN014-60HSX meets industry standards.
7.What is the process for return or replacement of PSMN014-60HSX?
All PSMN014-60HSX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN014-60HSX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PSMN014-60HSX part is unused and in its original packaging.
Return procedure for PSMN014-60HSX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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