Nexperia USA Inc. PSMN015-100B,118

Overview

PSMN015-100B from Nexperia is a standard-level N-channel TrenchMOS power MOSFET in D2PAK (SOT404) package, rated for 100 V V_DS, 75 A continuous drain current at T_mb = 25 °C, and 12 mΩ typical R_DS(on) at V_GS = 10 V and T_j = 25 °C. It features avalanche ruggedness (320 mJ unclamped), low gate charge (Q_G(tot) = 90 nC), and is qualified for computing, communications, consumer, and industrial DC-DC and SMPS applications.

For engineers reviewing the PSMN015-100B datasheet, PSMN015-100B pinout, PSMN015-100B application, or PSMN015-100B equivalent, key selection criteria include its 100 V blocking capability, thermal resistance of 0.5 K/W (junction-to-mounting base), avalanche energy rating, gate-drive compatibility with 10 V logic, and mounting-base–integrated drain connection for high-current PCB thermal management.

Technical Context

This device employs TrenchMOS silicon technology to achieve low on-resistance and fast switching performance. Its gate threshold voltage ranges from 2 V to 4 V at 25 °C, enabling reliable turn-on with standard 10 V gate drivers while maintaining low leakage (IDSS ≤ 10 µA at 25 °C). The integrated mounting base serves as both mechanical anchor and thermal path, directly connecting to the drain terminal.

Dynamic behavior is characterized by Q_GD = 35 nC and C_iss = 4900 pF at V_DS = 25 V, supporting efficient hard-switching in high-frequency power converters. The source-drain diode exhibits V_SD = 0.8–1.1 V at 25 A and t_rr = 80 ns, suitable for synchronous rectification and freewheeling roles where body-diode conduction occurs.

Key Specifications

Pinout & Package

PSMN015-100B uses the SOT404 (D2PAK) plastic surface-mount package with an exposed metal mounting base electrically connected to the drain. Pin 2 is internally connected to the mounting base and not externally accessible; only pins 1 (Gate), 3 (Source), and the mounting base (Drain) are functional terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP110N10F7 and IRF3205PBF, PSMN015-100B offers superior thermal integration via its D2PAK mounting base, verified avalanche ruggedness, and optimized Q_G/R_DS(on) trade-off-making it the preferred choice for compact, high-reliability, high-current power stages where PCB copper acts as primary heatsink.

Availability

PSMN015-100B is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and telecom power supplies requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for PSMN015-100B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions, with leadership in automotive-qualified and industrial-grade power components.

This device belongs to the SiliconMAX standard-level TrenchMOS family, engineered specifically for high-efficiency, high-current switching in computing, communications, and industrial power conversion systems.

FAQ

What is the maximum continuous drain current for PSMN015-100B at 100 °C mounting base temperature?

The maximum continuous drain current is 60.8 A at T_mb = 100 °C, as specified in Table 4 (Limiting Values) under V_GS = 10 V condition. This reflects thermal derating due to reduced heat transfer efficiency at elevated mounting base temperatures, and must be applied in thermal design calculations alongside R_th(j-mb) = 0.5 K/W.

Is the mounting base electrically isolated from the drain terminal?

No-the mounting base is electrically connected to the drain (Pin 2), as confirmed in Table 2 (Pinning Information) and Figure 14 (Package Outline). This direct connection provides the primary thermal and current path, and requires careful PCB layout to ensure proper grounding or high-voltage isolation depending on circuit topology.

Does PSMN015-100B support gate drive voltages below 10 V?

Yes-V_GS(th) ranges from 1 V to 4.4 V across temperature, enabling partial enhancement at 5 V. However, R_DS(on) rises significantly below 10 V (e.g., ~32.4 mΩ at 175 °C and 10 V); full-rated performance requires ≥10 V gate drive to maintain low conduction loss and thermal stability.

Can PSMN015-100B be used in synchronous rectification configurations?

Yes-the integrated source-drain diode has V_SD = 0.8–1.1 V at 25 A and t_rr = 80 ns, making it suitable for low-frequency synchronous rectification. For high-frequency (>300 kHz) operation, external MOSFET control is recommended to avoid body-diode conduction and associated reverse recovery losses.