Nexperia USA Inc. PSMN015-100P,127

Overview

PSMN015-100P from Nexperia is a standard-level N-channel TrenchMOS FET in TO-220AB (SOT78) package, designed for high-current switching in power conversion stages. It delivers 100 V V_DS, 12 mΩ R_DS(on) @ 10 V V_GS/25 A/25 °C, 75 A continuous drain current at T_mb = 25 °C, and rated avalanche energy of 320 mJ - enabling robust operation in DC-DC converters and SMPS primary-side switches.

For engineers reviewing the PSMN015-100P datasheet, PSMN015-100P pinout, PSMN015-100P application, or PSMN015-100P equivalent, key selection criteria include its low R_DS(on) thermal stability up to 175 °C junction, 0.5 K/W R_th(j-mb), gate charge profile (Q_G(tot) = 90 nC), and avalanche ruggedness validation under unclamped inductive switching.

Technical Context

This device employs TrenchMOS silicon technology to achieve low conduction loss and stable threshold voltage (V_GS(th) = 2–4 V at 25 °C) across temperature. Its gate drive requires 10 V for full enhancement, with Q_GD = 35 nC and Q_GS = 20 nC supporting fast, controllable switching in hard-switched topologies.

The integrated source-drain diode exhibits V_SD = 0.8–1.1 V @ 25 A and t_rr = 80 ns, enabling synchronous rectification support in buck converters. Thermal design centers on mounting-base cooling, with R_th(j-mb) = 0.5 K/W and P_tot = 300 W @ T_mb = 25 °C.

Key Specifications

Pinout & Package

Package: TO-220AB (SOT78), plastic single-ended package with heatsink-mounted metal base electrically connected to drain. Mounting base provides primary thermal path and mechanical anchoring via one hole.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP75NF75 and IRF540NPBF, PSMN015-100P uniquely combines 100 V rating, 12 mΩ R_DS(on), and validated avalanche ruggedness in a thermally optimized TO-220AB package - making it the only choice for high-reliability, high-density 48–60 V industrial SMPS where thermal management and fault tolerance are co-constrained.

Availability

PSMN015-100P is available at Aetrix Electronics and suitable for server VRM power stages, industrial 48 V DC-DC converters, and telecom AC-DC front-ends requiring stable component supply and long-lifecycle availability.

Supply support for PSMN015-100P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection.

This device belongs to the SiliconMAX standard-level TrenchMOS family, engineered specifically for high-efficiency, high-current power conversion in computing, communications, and industrial infrastructure - emphasizing thermal robustness and avalanche survivability over ultra-low gate charge.

FAQ

What is the maximum continuous drain current at 100 °C mounting base temperature?

The PSMN015-100P supports 60.8 A continuous drain current at T_mb = 100 °C, as specified in Table 4 (Limiting Values). This derating reflects thermal resistance from junction to mounting base (0.5 K/W) and ensures safe operation within the 175 °C maximum junction temperature limit under sustained load.

Is the mounting base electrically isolated from the drain terminal?

No - the mounting base is internally connected to the drain terminal, as confirmed in Table 2 (Pinning Information) and Figure 14 (Package Outline). This configuration requires electrical isolation between heatsink and system ground when used in high-side or floating configurations, typically achieved using insulating thermal pads or ceramic washers.

Does this MOSFET require a gate resistor for safe operation in hard-switched circuits?

Yes - a gate resistor (typically 5.6 Ω, per Figure 11 test condition) is required to control dV/dt and prevent oscillation during turn-on/turn-off. The 90 nC total gate charge and 35 nC gate-drain charge necessitate controlled slew rate to avoid cross-conduction in bridge topologies and minimize EMI generation.

Can PSMN015-100P replace older NXP PSMN015-100B variants in existing designs?

Yes - PSMN015-100P supersedes PSMN015-100B (per Table 7 Revision History) with identical electrical specifications, pinout, and package. The revision updates document formatting and legal text but retains all performance parameters, thermal characteristics, and avalanche ratings defined in the original product specification.