Nexperia USA Inc. PSMN015-100YLX

Overview

PSMN015-100YL from Nexperia is a logic-level N-channel MOSFET in LFPAK56 (SOT669) package, rated for 100 V V_DS, 15 mΩ R_DS(on) at V_GS = 5 V and 20 A, with 195 W total power dissipation at T_mb = 25 °C. It serves as a high-efficiency power switch in low-voltage synchronous rectification and battery-powered motor control circuits.

For engineers reviewing the PSMN015-100YL datasheet, PSMN015-100YL pinout, PSMN015-100YL application, or PSMN015-100YL equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) typ. 1.7 V), avalanche ruggedness (110 mJ), thermal resistance (R_th(j-mb) = 0.77 K/W), and LFPAK56 mounting base–drain connection for enhanced heatsinking.

Technical Context

This MOSFET employs TrenchMOS technology to achieve low on-resistance and low gate charge (Q_G(tot) = 45.8 nC at V_GS = 10 V), enabling fast switching in high-frequency DC-DC converters. Its gate threshold voltage (V_GS(th)) ranges from 0.5 V to 2.45 V across temperature, ensuring reliable turn-on with 3.3 V or 5 V logic controllers.

The device integrates an intrinsic body diode with V_SD = 0.8–1.2 V at I_S = 20 A and t_rr = 44 ns, supporting efficient freewheeling in half-bridge and synchronous buck topologies. Mounting base (mb) is internally connected to drain, enabling direct PCB copper pour thermal coupling without isolation constraints.

Key Specifications

Pinout & Package

LFPAK56 (SOT669) is a surface-mount plastic package with exposed mounting base for direct thermal interface. The package features four terminals plus integral drain-connected metal base for low-inductance, high-power-density layout.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with IRL1404ZPBF and DMN6016LFG-7, PSMN015-100YL uniquely balances 100 V rating, logic-level drive, LFPAK56 thermal performance, and avalanche ruggedness-making it optimal for high-density, high-reliability 24–48 V industrial and consumer power stages.

Availability

PSMN015-100YL is available at Aetrix Electronics and suitable for USB-PD fast charging, battery-powered motor control, and LED TV backlight driver designs requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for PSMN015-100YL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs, ESD protection, and logic ICs.

This part belongs to Nexperia's LFPAK logic-level MOSFET product line, engineered specifically for high-efficiency, high-power-density switching in consumer, industrial, and computing power supplies where thermal performance and gate-drive simplicity are critical.

FAQ

Is PSMN015-100YL suitable for 3.3 V microcontroller gate drive?

Yes. With V_GS(th) ranging from 1.4 V (min) to 2.1 V (max) at 25 °C and guaranteed turn-on at V_GS = 4.5 V, the device fully enhances under 3.3 V logic when derated for temperature. At T_j = 125 °C, V_GS(th) drops to ~1.0 V, further ensuring robust operation with 3.3 V drivers in typical ambient conditions.

What is the maximum continuous drain current at 100 °C mounting base temperature?

Per Figure 2 of the datasheet, the continuous drain current is 49 A at T_mb = 100 °C. This reflects thermal derating due to reduced heat transfer efficiency at elevated board temperatures, and assumes proper PCB copper area (≥1000 mm² 2 oz Cu) under the mounting base.

Does the mounting base require electrical isolation from PCB ground?

No. The mounting base is internally connected to the drain terminal. It must be soldered directly to a non-isolated copper pour tied to the drain net. Isolating the base creates thermal bottlenecks and violates the thermal design intent; no insulating thermal pads or sil-pad materials should be used.

Can PSMN015-100YL replace a standard SO-8 MOSFET in existing layouts?

No. LFPAK56 (SOT669) has different pad geometry, larger body size (6.2 × 5.8 mm vs. SO-8's 4.9 × 6.0 mm), and a bottom-mounted drain pad requiring dedicated land pattern per Figure 17. Direct replacement would cause solder joint failure and thermal runaway; redesign of footprint and thermal vias is mandatory.