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Nexperia USA Inc. PSMN015-100YSFX

Part No.:
PSMN015-100YSFX
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
SC-100, SOT-669
Datasheet:
AetrixPSMN015-100YSFX.pdf
Description:
NEXTPOWER 80/100V MOSFETS
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,413

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Product details

Overview

PSMN015-100YSFX from Nexperia is a 100 V, 15.5 mΩ N-channel MOSFET in LFPAK56 (SOT669) package, designed for high-efficiency switching in industrial and consumer power stages. It delivers 55 A continuous drain current at Tmb = 25 °C, features low QG × RDS(on) figure-of-merit (24 nC × 15.5 mΩ), and is fully avalanche-rated (62.7 mJ EAS) with 100% tested ruggedness - deployed as primary-side switch in 48 V DC-DC converters.

For engineers reviewing the PSMN015-100YSFX datasheet, PSMN015-100YSFX pinout, PSMN015-100YSFX application, or PSMN015-100YSFX equivalent, key selection criteria include RDS(on) at 100 °C (24.6 mΩ), gate charge (24 nC typ), thermal resistance to mounting base (1.3 K/W), and wave-solderable LFPAK56 footprint compatibility.

Technical Context

This NextPower MOSFET uses a trench-gate superjunction structure optimized for low conduction and switching losses. Its 100 V VDS rating supports 48 V bus architectures with margin, while the 175 °C rated junction enables operation in thermally constrained environments like USB-PD adapters and BLDC motor drives.

The device integrates a robust body diode with 21 nC recovered charge (Qr) and 30 ns reverse recovery time (trr), enabling reliable synchronous rectification in flyback and resonant topologies without external Schottky assistance.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 100 V - Supports 48 V input systems with ≥2× voltage margin against transients.
RDS(on) @ 100 °C 24.6 mΩ max - Enables <1.2 W conduction loss at 10 A, critical for thermally limited PCB layouts.
QG(tot) 24 nC typ - Reduces gate drive power and allows use of lower-current drivers in high-frequency SMPS.
EAS 62.7 mJ - Withstands unclamped inductive switching events without failure, eliminating need for snubbers.
Rth(j-mb) 1.3 K/W - Delivers >80% of rated 105 W power dissipation via direct mounting base thermal path.
tr/tf 8.7 ns / 9.6 ns - Minimizes switching transition losses in 500 kHz–1 MHz DC-DC designs.
Qr 21 nC - Low recovered charge reduces diode-induced voltage spikes and EMI in synchronous rectifiers.

Pinout & Package

LFPAK56 (SOT669) is a copper-clip, single-ended surface-mount package with enhanced thermal and electrical performance over standard SO-8. It features an exposed mounting base connected to drain, enabling low-inductance, high-current routing and direct heatsinking.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3 Source (S) Three parallel source terminals reduce package inductance and improve current sharing in high-di/dt switching.
4 Gate (G) Single gate terminal with 1.9 Ω typical gate resistance - balances switching speed and ringing control.
Mounting Base (mb) Drain (D) Exposed copper pad electrically and thermally connected to drain - serves as primary heat path and high-current drain node.

Key Features

Feature Design Value
Low Qrr 21 nC - Reduces voltage overshoot and EMI during diode commutation in synchronous rectifier mode.
Wave-solderable LFPAK56 Rated for 260 °C peak soldering temperature - compatible with standard lead-free reflow and wave processes without reliability risk.
Avalanche energy rating 62.7 mJ (unclamped) - Eliminates need for external clamping circuits in inductive load switching applications.
175 °C junction rating Qualified per AEC-Q101 stress tests - supports operation in sealed enclosures and high-ambient industrial environments.
Ha-free & RoHS compliant No halogenated flame retardants - meets IEC 61249-2-21 and IPC-4101D requirements for green electronics manufacturing.

Applications

AC-DC Synchronous Rectifier 48 V Primary-Side DC-DC Switch

Use Scenario: Secondary-side rectification in 65 W laptop adapters using QR flyback topology.

IC Role / Device Role / Timing Role: N-channel MOSFET replacing Schottky diode, driven by controller's SR signal with adaptive timing.

Use Value: Achieves >1.2% efficiency gain at full load vs. 40 V Schottky, enabled by 15.5 mΩ RDS(on) and 21 nC Qr.

Use Scenario: High-density 48 V–12 V isolated DC-DC converter for server power distribution.

IC Role / Device Role / Timing Role: Primary-side high-side switch in active-clamp forward or LLC resonant topology.

Use Value: Supports 500 kHz operation with 24 nC QG and 9.6 ns tf, reducing transformer size and improving power density.

BLDC Motor Control USB-PD Fast-Charge Adapter

Use Scenario: 3-phase inverter stage in 250 W e-bike controller operating at 48 V bus.

IC Role / Device Role / Timing Role: Low-side switch in 6-step commutation, handling 30 A RMS phase current.

Use Value: 1.3 K/W Rth(j-mb) enables direct heatsink mounting on aluminum PCB, maintaining Tj < 130 °C at full load.

Use Scenario: Compact 100 W GaN-assisted USB-PD 3.1 adapter with dual-output capability.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side GaN+Si hybrid architecture.

Use Value: 30 ns trr and low Qr prevent shoot-through during fast polarity reversal, enabling >95% peak efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
Infineon IPP040N10N5 RDS(on) = 4.0 mΩ @ 25 °C (lower), but QG = 42 nC (higher); TO-220FP package. Higher conduction efficiency at low current, but larger footprint and poorer thermal resistance (Rth(j-c) = 2.5 K/W). Prefer when board space permits and thermal design uses heatsinks; avoid in ultra-thin adapters.
Vishay SIHF150N10E RDS(on) = 15.0 mΩ @ 25 °C, but only rated to 150 °C Tj; D²PAK package. Lacks 175 °C qualification and avalanche testing; higher Rth(j-mb) (2.1 K/W) limits power density. Acceptable for cost-sensitive consumer products with derated ambient, not recommended for industrial duty cycles.

Compared with IPP040N10N5 and SIHF150N10E, PSMN015-100YSFX offers optimal balance of low RDS(on), moderate QG, industry-leading thermal performance in compact LFPAK56, and full 175 °C/avalanche qualification - making it preferred for space-constrained, high-reliability 48 V power conversion.

Availability

PSMN015-100YSFX is available at Aetrix Electronics and suitable for AC-DC adapters, 48 V DC-DC converters, and BLDC motor drives requiring stable component supply across production lifecycles.

Supply support for PSMN015-100YSFX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance logic, discrete, and MOSFET solutions with emphasis on reliability and manufacturability.

This device belongs to the NextPower series - engineered specifically for high-frequency, high-efficiency power conversion in industrial, computing, and consumer applications where thermal density and ruggedness are critical.

FAQ

What is the maximum continuous drain current for PSMN015-100YSFX at 100 °C mounting base temperature?

At Tmb = 100 °C, the continuous drain current is 39 A, as specified in Table 5 (Limiting Values). This value accounts for thermal derating due to reduced heat transfer efficiency at elevated board temperatures and is validated under VGS = 10 V conditions.

Does PSMN015-100YSFX require a gate resistor for safe operation in hard-switched topologies?

Yes - a gate resistor of 5 Ω is used in the datasheet's switching time characterization (Fig. 14–15). For hard-switched applications, a 3–10 Ω external resistor is recommended to dampen ringing, limit peak gate current, and ensure controlled dV/dt during turn-on/turn-off transitions.

Can PSMN015-100YSFX be used in place of a Schottky diode for synchronous rectification?

Yes - its low RDS(on) (15.5 mΩ), fast body diode (trr = 30 ns), and low Qr (21 nC) make it suitable for synchronous rectification in flyback and resonant converters. Gate drive must be precisely timed to avoid cross-conduction, typically using a dedicated SR controller.

Is the LFPAK56 package of PSMN015-100YSFX compatible with standard SO-8 footprints?

No - LFPAK56 (SOT669) has a unique 4-terminal layout with three source pins and an exposed drain mounting base. It requires the specific footprint shown in Figure 20 (reflow) or Figure 21 (wave), not a standard SO-8 land pattern. Misalignment causes solder joint voiding and thermal failure.

PSMN015-100YSFX Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
SC-100, SOT-669
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
55A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
7V, 10V
Rds On (Max) @ Id, Vgs:
15mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
36 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2234 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
105W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
LFPAK56, Power-SO8

PSMN015-100YSFX FAQ

1.How can I place an order for PSMN015-100YSFX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN015-100YSFX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN015-100YSFX reliable?

The price and inventory of PSMN015-100YSFX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN015-100YSFX is usually 5 days.

3.What payment methods are accepted for PSMN015-100YSFX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN015-100YSFX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN015-100YSFX?

PSMN015-100YSFX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN015-100YSFX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN015-100YSFX?

For technical support, including PSMN015-100YSFX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN015-100YSFX requirements.

6.How does Aetrix verify that PSMN015-100YSFX is sourced from the original manufacturer or authorized distributors?

All PSMN015-100YSFX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN015-100YSFX meets industry standards.

7.What is the process for return or replacement of PSMN015-100YSFX?

All PSMN015-100YSFX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN015-100YSFX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN015-100YSFX part is unused and in its original packaging.

Return procedure for PSMN015-100YSFX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

PSMN015-100YSFX Tags

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