Nexperia USA Inc. PSMN015-110P,127

Overview

PSMN015-110P from Nexperia is a standard-level N-channel TrenchMOS FET in TO-220AB (SOT78) package, designed for high-current switching in power conversion stages. It delivers 110 V V_DS, 12 mΩ R_DS(on) @ 10 V V_GS/25 A/25 °C, and 300 W P_tot at T_mb = 25 °C, with low Q_G (90 nC) and Q_GD (35 nC) enabling efficient hard-switching in DC-DC converters and SMPS primary-side switches.

For engineers reviewing the PSMN015-110P datasheet, PSMN015-110P pinout, PSMN015-110P application, or PSMN015-110P equivalent, key selection criteria include its 110 V blocking rating, thermal resistance R_th(j-mb) of 0.5 K/W, avalanche energy rating (320 mJ), gate threshold voltage range (2–4 V), and mounting-base–referenced thermal design requirements.

Technical Context

This device employs TrenchMOS silicon technology to achieve low R_DS(on) and optimized charge characteristics. Its gate drive requires only 10 V for full enhancement, with V_GS(th) specified from 1 V (T_j = 175 °C) to 4.4 V (T_j = −55 °C), ensuring robust turn-on across industrial temperature ranges.

The source-drain diode exhibits V_SD = 0.8–1.1 V @ 25 A and t_rr = 80 ns, supporting synchronous rectification and freewheeling in buck and half-bridge topologies. Thermal performance is defined relative to mounting base (not ambient), with R_th(j-mb) = 0.5 K/W enabling high-power operation when heatsink-mounted.

Key Specifications

Pinout & Package

PSMN015-110P uses the TO-220AB (SOT78) plastic single-ended package with heatsink mounting. The metal mounting base is electrically connected to the drain terminal, requiring isolation when mounted to shared heatsinks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP110N10F7 and IRF1404ZPBF, PSMN015-110P uniquely balances 110 V rating, 12 mΩ conduction, 0.5 K/W thermal resistance, and documented 320 mJ avalanche capability - making it optimal for 48–100 V industrial and telecom SMPS where both voltage margin and thermal density matter.

Availability

PSMN015-110P is available at Aetrix Electronics and suitable for server VRMs, industrial SMPS, telecom DC-DC converters, and EV onboard charger auxiliary power supplies requiring stable component supply and long-term manufacturability.

Supply support for PSMN015-110P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs, ESD protection, and logic ICs.

This part belongs to the SiliconMAX standard-level TrenchMOS family, engineered for cost-sensitive yet thermally demanding computing, communications, and industrial power conversion applications where robustness and consistent parametric performance are essential.

FAQ

Is PSMN015-110P suitable for synchronous rectification in a 48 V input buck converter?

Yes. With R_DS(on) = 12 mΩ @ 10 V V_GS and V_SD = 0.8 V, it reduces conduction loss versus Schottky diodes while supporting gate drive from standard bootstrap controllers. Its 110 V rating provides ample margin for 48 V bus transients up to 80 V, and low Q_GD ensures clean turn-off in high-frequency operation.

What is the maximum continuous drain current at 100 °C mounting base temperature?

Per Figure 1 in the datasheet, the normalized I_D derating factor at T_mb = 100 °C is ~81%. Since rated I_D = 75 A at T_mb = 25 °C, the maximum continuous drain current at 100 °C mounting base is approximately 60.8 A - confirmed in Table 4 under "Limiting values".

Does the mounting base require electrical isolation when used with a common heatsink?

Yes. Pin 2 (Drain) is internally connected to the metal mounting base per Table 2 and Figure 14. If multiple devices share a heatsink, each PSMN015-110P must be mounted using an electrically isolating pad or shoulder washer to prevent shorted drain nodes - especially critical in half-bridge or multi-phase configurations.

How does the gate threshold voltage change over temperature, and what impact does this have on drive design?

V_GS(th) decreases from 4.4 V at −55 °C to 1 V at 175 °C (Table 6). This wide range means gate drive must ensure ≥4 V over temperature to guarantee turn-on at cold start, while avoiding excessive V_GS (>15 V) at high temperature to limit gate oxide stress. A 10–12 V regulated gate drive is recommended for robust operation.