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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN015-60PS,127

Name: PSMN015-60PS,127
Brand: Nexperia USA Inc.
SKU: PSMN015-60PS,127
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN015-60PS,127

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: PSMN015-60PS,127.pdf

Description:: MOSFET N-CH 60V 50A TO220AB

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Product details

Overview

PSMN015-60PS from Nexperia is a standard-level N-channel MOSFET in TO-220AB (SOT78) package, rated for 60 V drain-source voltage, 14.8 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and 175 °C maximum junction temperature. It delivers 50 A continuous drain current at T_mb = 25 °C and supports high-efficiency load switching in industrial power supplies and motor control circuits.

For engineers reviewing the PSMN015-60PS datasheet, PSMN015-60PS pinout, PSMN015-60PS application, or PSMN015-60PS equivalent, key selection criteria include its 14.8 mΩ on-resistance at 10 V gate drive, 20.9 nC total gate charge, 1.74 K/W junction-to-mounting-base thermal resistance, and suitability for non-automotive 60 V DC-DC and server power applications requiring stable conduction and avalanche ruggedness.

Technical Context

This MOSFET employs planar silicon technology with optimized channel geometry to achieve low R_DS(on) while maintaining robust safe operating area (SOA) up to 201 A peak pulsed current. Its gate threshold voltage ranges from 1 V at 175 °C to 4.8 V at –55 °C, enabling reliable turn-on across wide temperature extremes without overdrive.

The device features an integrated source-drain diode with 31 ns reverse recovery time and 28.5 nC recovered charge, supporting synchronous rectification and freewheeling in hard-switched topologies. Avalanche energy rating of 44 mJ (unclamped, V_sup ≤60 V) confirms ruggedness under inductive switching stress.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage compatible with 48 V nominal bus systems and transient-tolerant 60 V rail designs.
R_DS(on)	14.8 mΩ @ V_GS = 10 V, T_j = 25 °C - Enables <1.5 W conduction loss at 40 A, critical for thermally constrained power stages.
I_D	50 A @ T_mb = 25 °C - Supports high-current load switching without external heatsink in moderate ambient conditions.
Q_G(tot)	20.9 nC - Determines gate driver power requirement and switching speed; enables ~100 kHz operation with 4.7 Ω external gate resistor.
R_th(j-mb)	1.74 K/W - Allows direct mounting to heatsink; yields ~87 °C junction rise above base at 50 A continuous conduction.
E_AS	44 mJ unclamped - Withstands single-event inductive energy spikes common in motor drive and relay snubbing applications.
V_GS(th)	2–4 V @ T_j = 25 °C - Ensures clean turn-on with standard 5 V or 10 V logic-level gate drivers without risk of partial enhancement.

Pinout & Package

PSMN015-60PS uses the TO-220AB (SOT78) plastic single-ended package with heatsink mounting and three leads. The mounting base (mb) is electrically connected to the drain terminal, enabling low-inductance thermal path and simplified heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control electrode accepting 10 V standard-level drive; 1.3 Ω internal gate resistance limits ringing during fast switching.
2 (D)	Drain	Main high-side power terminal; electrically tied to mounting base for direct heatsink coupling and minimized thermal resistance.
3 (S)	Source	Power return node and reference for gate drive; isolated from mounting base to enable low-side or high-side configurations.

Key Features

Feature	Design Value
Low R_DS(on) at 10 V drive	14.8 mΩ enables <1.5 W conduction loss at 40 A, reducing thermal design burden in compact power modules.
175 °C junction rating	Supports operation in high-ambient environments such as enclosed industrial enclosures or server chassis without derating.
Integrated source-drain diode	31 ns t_rr and 28.5 nC Q_r allow use in freewheeling paths without external Schottky, simplifying BOM in DC-DC converters.
Avalanche-rated	44 mJ E_AS ensures reliability in inductive load switching where voltage overshoot exceeds V_DS rating.

Applications

DC-to-DC Converters

Load Switching

Use Scenario: Primary-side switch in 48 V input, 12 V output isolated forward converter for telecom infrastructure.

IC Role / Device Role / Timing Role: High-side power switch handling 30–50 A continuous current with 100 kHz PWM duty cycling.

Use Value: 14.8 mΩ R_DS(on) minimizes conduction loss; 20.9 nC Q_G allows efficient gate drive with low-power controller ICs.

Use Scenario: Hot-swap protection circuit in industrial PLC backplane supplying 24 V/20 A to field I/O modules.

IC Role / Device Role / Timing Role: Low-side load switch controlling power delivery with controlled inrush and fault isolation.

Use Value: 175 °C T_j rating ensures stability during sustained overload; 50 A I_D headroom accommodates surge currents.

Motor Control

Server Power Supplies

Use Scenario: Half-bridge leg in 24 V brushed DC motor driver for HVAC actuators in building automation.

IC Role / Device Role / Timing Role: Synchronous rectifier and PWM-controlled power switch in H-bridge topology.

Use Value: Integrated source-drain diode with 31 ns t_rr reduces body-diode conduction loss and EMI during dead-time transitions.

Use Scenario: Secondary-side synchronous rectifier in 48 V to 12 V intermediate bus converter for AI accelerator racks.

IC Role / Device Role / Timing Role: High-current, low-loss rectifying switch replacing Schottky diodes in LLC resonant topology.

Use Value: 1.74 K/W R_th(j-mb) enables direct heatsink mounting, eliminating thermal interface layers and improving long-term reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFZ44NPBF	R_DS(on) = 28 mΩ @ 10 V, higher Q_G = 67 nC, lower I_D = 49 A, same TO-220AB package	Higher conduction and switching losses limit efficiency in high-frequency, high-current DC-DC converters	Select when cost sensitivity outweighs efficiency requirements and thermal margin is ample.
STP60NF06	R_DS(on) = 18 mΩ @ 10 V, Q_G = 65 nC, T_j = 175 °C, TO-220FP package (isolated tab)	Higher R_DS(on) and gate charge reduce efficiency; isolated tab avoids need for insulating pad but increases R_th(j-a)	Prefer when electrical isolation between drain and heatsink is mandatory and 14.8 mΩ performance is not required.

Compared with IRFZ44NPBF and STP60NF06, PSMN015-60PS offers the lowest R_DS(on) and gate charge in TO-220AB, delivering superior thermal performance and switching efficiency-critical for space-constrained, high-reliability industrial and server power designs.

Availability

PSMN015-60PS is available at Aetrix Electronics and suitable for DC-to-DC converters, motor control drives, and server power supplies requiring stable component supply, long-lifecycle support, and traceable sourcing for industrial OEM programs.

Supply support for PSMN015-60PS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs, ESD protection, and logic solutions.

This part belongs to Nexperia's standard-level power MOSFET product line, engineered for cost-sensitive yet thermally demanding industrial, communications, and computing power applications-not automotive use.

FAQ

Is PSMN015-60PS qualified for automotive applications?

No. PSMN015-60PS is explicitly designated as non-automotive qualified in Nexperia's documentation. It lacks AEC-Q101 qualification, automotive-specific testing, and guaranteed extended temperature operation beyond 175 °C junction. Use only in industrial, computing, or communications equipment.

What is the thermal resistance from junction to ambient for PSMN015-60PS?

The datasheet specifies R_th(j-a) = 60 K/W in vertical free-air configuration. However, this value assumes no heatsink-practical designs must use the mounting base (drain-connected) for heatsinking. The relevant parameter is R_th(j-mb) = 1.74 K/W, which governs thermal performance when mounted to a heatsink.

Can PSMN015-60PS be driven directly by a 3.3 V microcontroller GPIO?

No. Its gate threshold voltage range is 2–4 V at 25 °C, and it requires 10 V for full enhancement to achieve 14.8 mΩ R_DS(on). A 3.3 V signal results in high R_DS(on) (>100 mΩ), excessive heating, and unreliable switching. A level-shifting gate driver or dedicated MOSFET driver IC is required.

Does the mounting base require electrical isolation from the heatsink?

Yes. Since the mounting base is internally connected to the drain terminal, direct metal-to-metal contact with the heatsink creates a drain-to-heatsink short. An electrically isolating thermal pad or mica washer with appropriate dielectric strength (≥60 V) must be used unless the heatsink is floating or referenced to drain potential.

PSMN015-60PS,127 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 14.8mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 20.9 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1220 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 86W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

PSMN015-60PS,127 FAQ

1.How can I place an order for PSMN015-60PS,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN015-60PS,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN015-60PS,127 reliable?

The price and inventory of PSMN015-60PS,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN015-60PS,127 is usually 5 days.

3.What payment methods are accepted for PSMN015-60PS,127?

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4.How is shipping managed for PSMN015-60PS,127?

PSMN015-60PS,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN015-60PS,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN015-60PS,127?

For technical support, including PSMN015-60PS,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN015-60PS,127 requirements.

6.How does Aetrix verify that PSMN015-60PS,127 is sourced from the original manufacturer or authorized distributors?

All PSMN015-60PS,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN015-60PS,127 meets industry standards.

7.What is the process for return or replacement of PSMN015-60PS,127?

All PSMN015-60PS,127 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN015-60PS,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN015-60PS,127 part is unused and in its original packaging.

Return procedure for PSMN015-60PS,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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