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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN016-100PS,127

Name: PSMN016-100PS,127
Brand: Nexperia USA Inc.
SKU: PSMN016-100PS,127
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN016-100PS,127

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: PSMN016-100PS,127.pdf

Description:: MOSFET N-CH 100V 57A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PSMN016-100PS from Nexperia is a standard-level N-channel MOSFET in TO-220AB (SOT78) package, rated for 100 V V_DS, 16 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and qualified to 175 °C junction temperature. It delivers 57 A continuous drain current at T_mb = 25 °C and supports high-efficiency DC-to-DC converters and server power supplies.

For engineers reviewing the PSMN016-100PS datasheet, PSMN016-100PS pinout, PSMN016-100PS application, or PSMN016-100PS equivalent, this device is selected for its low conduction loss, standard gate drive compatibility (V_GS(th) = 2–4 V), and robust avalanche energy rating of 101 mJ - critical for load switching and motor control reliability.

Technical Context

This MOSFET employs planar silicon technology with an integrated body diode optimized for fast recovery (t_rr = 54 ns) and low Q_r = 126 nC. Its gate charge profile shows Q_G(tot) = 49 nC and Q_GD = 15 nC at V_DS = 50 V, enabling efficient hard-switching operation in synchronous rectification and PWM stages.

The device features a thermally enhanced TO-220AB package with mounting base electrically connected to the drain, achieving R_th(j-mb) = 0.56 K/W typical. Its V_GS(th) shifts predictably from 2 V at 25 °C to 1 V at 175 °C, supporting stable gate control across industrial temperature ranges.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - maximum blocking voltage for 48 V input bus designs and 12 V/24 V industrial systems
R_DS(on)	13–16 mΩ @ V_GS = 10 V, T_j = 25 °C - enables <1.5 W conduction loss at 30 A, reducing heatsink requirements
I_D	57 A @ T_mb = 25 °C - supports high-current load switching without parallel devices in mid-power applications
E_AS	101 mJ non-repetitive avalanche energy - withstands unclamped inductive turn-off events in motor drives and solenoid controls
Q_G(tot)	49 nC - determines gate driver power requirement and switching speed in 100–500 kHz SMPS designs
t_r/t_f	23 ns / 18 ns - minimizes switching transition losses and EMI generation in high-frequency converters
V_SD	0.8–1.2 V @ I_S = 15 A - defines forward voltage drop and power loss of internal body diode during freewheeling

Pinout & Package

TO-220AB (SOT78) plastic single-ended package with heatsink mounting base; 3 leads; mounting base electrically tied to drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Standard-level control input requiring ≥10 V for full enhancement; threshold range 2–4 V at 25 °C
2 (D)	Drain	Main high-side or low-side power path; electrically connected to mounting base for thermal and electrical integration
3 (S)	Source	Power return node; referenced for gate drive; forms common node with body diode cathode

Key Features

Feature	Design Value
Low R_DS(on)	13 mΩ typ. at 25 °C enables <0.5 W conduction loss at 20 A, reducing thermal design margin
High-temperature qualification	Rated for 175 °C junction operation - supports sealed enclosures and high-ambient industrial environments
Standard gate drive compatibility	V_GS(th) = 2–4 V allows direct interface with 5 V or 3.3 V microcontrollers without level-shifting circuitry
Avalanche ruggedness	101 mJ E_AS ensures reliable operation under inductive load transients without external snubbers
Fast body diode	t_rr = 54 ns and Q_r = 126 nC reduce reverse recovery losses in synchronous buck and half-bridge topologies

Applications

DC-to-DC Converters

Server Power Supplies

Use Scenario: Primary-side switch in isolated 48 V–12 V intermediate bus converters operating at 200–300 kHz.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET performing hard-switched PWM power transfer.

Use Value: Low Q_G and R_DS(on) minimize combined conduction and switching losses, improving efficiency by >1.2% at 50 A output.

Use Scenario: OR-ing FET in redundant 12 V server backplane power distribution.

IC Role / Device Role / Timing Role: Load switch controlling power path between two hot-swap controllers.

Use Value: 100 V rating and 101 mJ avalanche capability prevent failure during bus fault conditions and hot-plug transients.

Motor Control

Load Switching

Use Scenario: Half-bridge low-side switch in 24 V brushed DC motor drivers for industrial actuators.

IC Role / Device Role / Timing Role: PWM-controlled power stage delivering up to 40 A peak current per phase.

Use Value: Fast t_f = 18 ns and low C_oss = 189 pF reduce shoot-through risk and improve PWM fidelity at 20 kHz.

Use Scenario: High-current system power enable switch in programmable logic controller (PLC) I/O modules.

IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relays handling 30 A resistive loads.

Use Value: TO-220AB mounting base enables direct heatsink attachment, sustaining 40 A continuous current at T_mb ≤ 100 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N10F7	100 V, 110 A, R_DS(on) = 7.5 mΩ @ 10 V but requires higher gate charge (Q_G = 72 nC); TO-220FP package with insulated tab	Better conduction loss at high current but slower switching; suited for lower-frequency (<100 kHz), high-current motor drives	Select when minimizing I²R loss dominates over switching loss and insulation from heatsink is required
IRF540NPBF	100 V, 33 A, R_DS(on) = 44 mΩ @ 10 V, Q_G = 63 nC; legacy planar process, no avalanche rating specified	Higher on-resistance increases conduction loss by ~2.7×; lacks documented E_AS - unsuitable for inductive switching	Only consider for cost-sensitive, low-current (<15 A), non-avalanche-critical applications with relaxed thermal constraints

Compared with STP110N10F7 and IRF540NPBF, PSMN016-100PS offers balanced performance: lower gate charge than IRF540NPBF for faster switching, and superior avalanche ruggedness versus both - making it optimal for industrial DC-DC and motor control where reliability under transient stress is mandatory.

Availability

PSMN016-100PS is available at Aetrix Electronics and suitable for DC-to-DC converters, server power supplies, and motor control systems requiring stable component supply, long-term industrial lifecycle support, and traceable sourcing.

Supply support for PSMN016-100PS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs.

This part belongs to Nexperia's standard-level logic-compatible MOSFET product line, engineered for cost-effective, thermally robust power switching in industrial, communications, and computing infrastructure.

FAQ

Is PSMN016-100PS suitable for use with 3.3 V microcontroller gate drive?

No - PSMN016-100PS is a standard-level MOSFET requiring ≥10 V V_GS for full enhancement. At 3.3 V, R_DS(on) exceeds 200 mΩ, causing excessive conduction loss. A gate driver IC or level shifter is required for 3.3 V logic compatibility.

What is the thermal resistance from junction to mounting base, and how does it impact heatsink selection?

R_th(j-mb) is 0.56 K/W typical. With P_tot = 148 W at T_mb = 25 °C, a 1.5 K/W heatsink keeps T_j ≤ 125 °C at 50 W dissipation. Mounting base must be electrically isolated if connected to non-drain potentials, as it is internally tied to drain.

Does PSMN016-100PS have a specified avalanche SOA, and how is it tested?

Yes - E_AS = 101 mJ is specified for unclamped inductive switching with V_GS = 10 V, T_j(init) = 25 °C, I_D = 60 A, V_sup ≤ 100 V, and R_GS = 50 Ω. This rating validates single-pulse ruggedness in motor commutation and relay driving, not repetitive operation.

Can the internal body diode be used for synchronous rectification in a buck converter?

Yes - the body diode has t_rr = 54 ns and Q_r = 126 nC, enabling use in low-frequency (<100 kHz) synchronous rectification. However, for >200 kHz operation, an external Schottky diode or dedicated synchronous MOSFET is preferred to minimize recovery losses.

PSMN016-100PS,127 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 57A (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 16mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 49 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2404 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 148W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

PSMN016-100PS,127 FAQ

1.How can I place an order for PSMN016-100PS,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN016-100PS,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN016-100PS,127 reliable?

The price and inventory of PSMN016-100PS,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN016-100PS,127 is usually 5 days.

3.What payment methods are accepted for PSMN016-100PS,127?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN016-100PS,127 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN016-100PS,127?

PSMN016-100PS,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN016-100PS,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN016-100PS,127?

For technical support, including PSMN016-100PS,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN016-100PS,127 requirements.

6.How does Aetrix verify that PSMN016-100PS,127 is sourced from the original manufacturer or authorized distributors?

All PSMN016-100PS,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN016-100PS,127 meets industry standards.

7.What is the process for return or replacement of PSMN016-100PS,127?

All PSMN016-100PS,127 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN016-100PS,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN016-100PS,127 part is unused and in its original packaging.

Return procedure for PSMN016-100PS,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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