Nexperia USA Inc. PSMN016-100YS,115

Overview

PSMN016-100YS from Nexperia is a standard-level N-channel MOSFET in LFPAK (SOT669) package, rated for 100 V drain-source voltage, 16.3 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and qualified to 175 °C junction temperature. It delivers 51 A continuous drain current at T_mb = 25 °C and supports high-efficiency switching in power converters and load-switching applications.

For engineers reviewing the PSMN016-100YS datasheet, PSMN016-100YS pinout, PSMN016-100YS application, or PSMN016-100YS equivalent, key selection criteria include its 100 V rating, low 16.3 mΩ on-resistance, thermal robustness to 175 °C, LFPAK package thermal resistance of 0.54 K/W (typ), and gate charge profile optimized for fast switching with Q_G(tot) = 54 nC.

Technical Context

This MOSFET employs Nexperia's Advanced TrenchMOS technology to achieve low R_DS(on) and low gate charge simultaneously-enabling high efficiency in hard-switched DC-DC converters and motor control stages. Its LFPAK package integrates a thermally enhanced mounting base directly connected to the drain, enabling efficient heat transfer to PCB copper planes.

The device features a gate threshold voltage of 2–4 V (typ), avalanche ruggedness of 87 mJ (unclamped), and exhibits stable R_DS(on) over temperature (29.3 mΩ at T_j = 100 °C). Its C_iss = 2744 pF and Q_GD = 16 nC support predictable turn-on/turn-off timing in synchronous rectification and half-bridge topologies.

Key Specifications

Pinout & Package

PSMN016-100YS uses the SOT669 (LFPAK; Power-SO8) plastic surface-mount package with 4 leads and an exposed mounting base electrically connected to the drain terminal. The package provides superior thermal performance versus standard SO-8, with R_th(j-mb) as low as 0.54 K/W (typ).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Compared with PSMN020-100YS,115, the PSMN016-100YS offers lower conduction loss at the expense of slightly higher gate drive demand; versus IPB180N10N3 G, it trades peak current capacity and absolute R_DS(on) for superior power density, faster switching, and smaller PCB footprint in LFPAK.

Availability

PSMN016-100YS is available at Aetrix Electronics and suitable for DC-DC converters, lithium-ion battery protection circuits, and industrial load switching applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for PSMN016-100YS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic components, with leadership in MOSFETs, ESD protection, and logic ICs for industrial and automotive markets.

This part belongs to Nexperia's standard-level TrenchMOS portfolio, engineered for cost-effective, thermally robust switching in industrial power supplies, battery management, and motor control-prioritizing balance between R_DS(on), Q_G, and ruggedness over ultra-low R_DS(on) or ultra-high-speed specs.

FAQ

What is the maximum continuous drain current for PSMN016-100YS at 100 °C mounting base temperature?

The maximum continuous drain current is 36 A at T_mb = 100 °C and V_GS = 10 V, per the Absolute Maximum Ratings table. This derating reflects thermal limits imposed by the LFPAK package's ability to dissipate power at elevated ambient or board temperatures.

Does PSMN016-100YS have an integrated body diode, and what are its key parameters?

Yes-it features a built-in source-drain diode with forward voltage V_SD = 0.8–1.2 V at I_S = 15 A and T_j = 25 °C, reverse recovery time t_rr = 56 ns, and recovered charge Q_r = 131 nC. These values support moderate-frequency freewheeling in synchronous rectifiers and half-bridge configurations.

Can PSMN016-100YS be used in avalanche mode, and what is its rated energy?

Yes-the device is specified for unclamped inductive switching with E_AS = 87 mJ at V_GS = 10 V, T_j(init) = 25 °C, I_D = 51 A, V_sup ≤ 100 V, and R_GS = 50 Ω. This rating applies to single-pulse conditions only and does not imply repetitive avalanche capability.

What is the recommended PCB layout practice for the mounting base of PSMN016-100YS?

The mounting base (drain-connected copper pad) must be soldered to a minimum 200 mm² continuous copper area on the PCB's inner or outer layer, with ≥4 thermal vias (0.3 mm diameter, filled or plated) connecting to internal ground/power planes. This ensures effective heat transfer and maintains R_th(j-mb) near the 0.54 K/W typ value.