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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN017-30BL,118

Name: PSMN017-30BL,118
Brand: Nexperia USA Inc.
SKU: PSMN017-30BL,118
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN017-30BL,118

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: PSMN017-30BL,118.pdf

Description:: MOSFET N-CH 30V 32A D2PAK

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Product details

Overview

PSMN017-30BL from Nexperia is a logic-level N-channel MOSFET in D2PAK (SOT404) package, rated for 30 V V_DS, 17 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, qualified to 175 °C junction temperature, and optimized for high-efficiency load switching in server power supplies and motor control circuits.

For engineers reviewing the PSMN017-30BL datasheet, PSMN017-30BL pinout, PSMN017-30BL application, or PSMN017-30BL equivalent, this device supports logic-level gate drive (V_GS(th) = 1.3–2.15 V), delivers 32 A continuous drain current at T_mb = 25 °C, and features low Q_GD (1.94 nC) and robust avalanche energy rating (13 mJ) for reliable hard-switching operation.

Technical Context

This MOSFET employs planar silicon technology with optimized channel geometry to achieve low on-resistance while maintaining stable threshold voltage across -55 °C to 175 °C. Its R_DS(on) remains ≤23.5 mΩ up to T_j = 100 °C under V_GS = 10 V, enabling thermally robust operation in compact power stages.

The device integrates an intrinsic body diode with V_SD = 0.89–1.2 V at I_S = 10 A and T_j = 25 °C, and exhibits fast reverse recovery (t_rr = 17.3 ns, Q_r = 6.5 nC), supporting synchronous rectification and freewheeling in DC-DC converters without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; defines safe operating range in 24 V bus systems and 30 V-rated power rails.
R_DS(on) @ V_GS = 10 V, T_j = 25 °C	13.3–17 mΩ - Low conduction loss enabling <1.7 W I²R loss at 10 A, critical for high-efficiency 12–24 V load switches.
I_D continuous @ T_mb = 25 °C	32 A - Package-limited current capacity; enables single-device use in 50–100 W power stages without paralleling.
Q_GD	1.94 nC - Low gate-drain charge minimizes Miller-induced switching delay and improves controllability in high-frequency PWM (<500 kHz).
E_AS	13 mJ - Non-repetitive avalanche energy rating; allows safe operation during inductive turn-off transients in motor drives and solenoid controls.
V_GS(th)	1.3–2.15 V @ T_j = 25 °C - Logic-compatible threshold ensures full enhancement with 3.3 V or 5 V microcontroller GPIOs without level-shifting.
R_th(j-mb)	3.18–3.2 K/W - Low junction-to-mounting-base thermal resistance enables direct heatsink mounting for >30 W dissipation without thermal derating.

Pinout & Package

PSMN017-30BL uses the D2PAK (SOT404) surface-mount package with exposed mounting base electrically connected to the drain terminal. The package supports high-current PCB layouts via soldered thermal pad and accommodates mechanical heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control input for MOSFET channel; requires ≤20 V absolute max; driven directly by 3.3 V/5 V logic sources.
2 (D)	Drain	Main high-side power path terminal; internally bonded to mounting base for low-inductance, high-current routing.
3 (S)	Source	Power return node and reference for gate drive; forms common node with driver IC ground in high-side configurations.
Mounting Base	Drain (electrically tied)	Thermal and electrical interface to heatsink; must be soldered to copper pour for R_th(j-mb) ≤3.2 K/W performance.

Key Features

Feature	Design Value
Logic-level gate drive compatibility	Operates fully enhanced with 3.3 V or 5 V gate voltage, eliminating need for dedicated gate drivers in MCU-based power control.
High-temperature qualification	Rated for continuous operation up to 175 °C junction temperature, supporting sealed industrial enclosures and high-ambient server environments.
Low Q_G(tot) / Q_GD ratio	Q_G(tot) = 5.1 nC at V_GS = 4.5 V; Q_GD/Q_G(tot) ≈ 38 % - Enables fast, predictable switching with minimal shoot-through risk in half-bridge topologies.
Robust body diode	t_rr = 17.3 ns, Q_r = 6.5 nC - Supports efficient freewheeling in buck converters and reduces snubber requirements in flyback designs.
Package thermal performance	R_th(j-mb) = 3.18 K/W - Delivers >12 W usable power dissipation at ΔT = 38 °C, enabling compact thermal design without forced air.

Applications

Server Power Supplies

DC-DC Converters

Use Scenario: Primary-side synchronous rectification and secondary-side OR-ing in 12 V/48 V intermediate bus converters.

IC Role / Device Role / Timing Role: High-side N-channel switch controlling power delivery path; operates in continuous conduction mode at 200–500 kHz.

Use Value: 17 mΩ R_DS(on) reduces conduction loss by >35 % vs. comparable 25 mΩ devices, improving system efficiency by 0.8–1.2 % at 20 A output.

Use Scenario: Buck converter high-side switch in point-of-load (POL) modules for FPGA and ASIC core voltage regulation.

IC Role / Device Role / Timing Role: Fast-switching power FET with controlled dV/dt; driven by integrated gate driver with 5 V logic interface.

Use Value: Low Q_GD (1.94 nC) and 9.2 ns rise time enable clean 400 kHz switching with <5 % duty-cycle dead-time overhead.

Motor Control

Load Switching

Use Scenario: Half-bridge leg in 24 V brushed DC motor drivers for industrial actuators and HVAC blowers.

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current; subjected to inductive kickback and PWM commutation.

Use Value: 13 mJ avalanche energy rating absorbs repetitive inductive spikes without derating, eliminating need for external TVS clamping.

Use Scenario: Hot-swap and inrush current limiting for peripheral modules in telecom line cards and test equipment backplanes.

IC Role / Device Role / Timing Role: Controlled power rail enable switch with soft-start via gate resistor; handles 32 A steady-state load.

Use Value: 32 A continuous rating at T_mb = 25 °C supports single-device implementation of 400 W loads without paralleling or thermal throttling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF3708PBF	R_DS(on) = 20 mΩ @ V_GS = 10 V; Q_GD = 2.8 nC; TO-220 package; no 175 °C rating.	Higher conduction loss and slower switching; unsuitable for high-temp sealed enclosures or high-frequency POLs.	Select only if TO-220 mechanical fit is mandatory and ambient T_j stays below 125 °C.
DMN3028LSD-13	R_DS(on) = 28 mΩ @ V_GS = 4.5 V; SO-8 package; 25 A rating; lower avalanche energy (6.5 mJ).	Limited current and thermal capability; inadequate for >20 A continuous loads or inductive motor switching.	Prefer for space-constrained low-power applications where D2PAK footprint is prohibitive and peak current <15 A.

Compared with IRF3708PBF and DMN3028LSD-13, PSMN017-30BL delivers superior thermal robustness (175 °C), lower R_DS(on), and higher avalanche margin-making it the optimal choice for industrial-grade 24–30 V power stages requiring long-term reliability under thermal stress.

Availability

PSMN017-30BL is available at Aetrix Electronics and suitable for server power supplies, DC-DC converters, motor control circuits, and high-current load switching applications requiring stable component supply and long-term industrial lifecycle support.

Supply support for PSMN017-30BL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs, ESD protection, and logic ICs.

The PSMN017-30BL belongs to Nexperia's logic-level Power MOSFET product line, engineered specifically for high-efficiency, high-temperature power conversion in industrial and communications infrastructure where thermal resilience and gate-drive simplicity are critical.

FAQ

What is the maximum gate-source voltage rating for PSMN017-30BL?

The absolute maximum V_GS is ±20 V per the datasheet Limiting Values table. Operation beyond ±16 V risks permanent gate oxide damage. For reliable logic-level drive, maintain V_GS between 0 V and 10 V during normal switching, with transient overshoot limited to <15 V using appropriate gate resistor and layout practices.

Can PSMN017-30BL be used in high-side switch configurations?

Yes-it supports high-side operation when paired with a gate driver capable of providing V_GS ≥10 V referenced to the source. Its logic-level threshold allows bootstrap or isolated gate drive solutions; however, the D2PAK mounting base is electrically connected to drain, so PCB layout must isolate heatsink potential from system ground in floating configurations.

How does R_DS(on) change with temperature and gate voltage?

R_DS(on) increases with junction temperature: at V_GS = 10 V, it rises from 13.3–17 mΩ at 25 °C to 24–31.5 mΩ at 175 °C. At V_GS = 4.5 V, R_DS(on) is 18.6–23.3 mΩ at 25 °C but degrades to ≤43 mΩ at 175 °C-confirming strong gate overdrive is essential for high-temp stability.

Is the body diode suitable for synchronous rectification?

The intrinsic body diode has t_rr = 17.3 ns and Q_r = 6.5 nC at I_S = 10 A, making it viable for moderate-frequency (<300 kHz) synchronous rectification in buck converters. However, for highest efficiency above 200 kHz, an external Schottky diode or dedicated synchronous rectifier IC is recommended to minimize reverse recovery losses.

PSMN017-30BL,118 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 32A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 17mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.15V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 10.7 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 552 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 47W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

PSMN017-30BL,118 FAQ

1.How can I place an order for PSMN017-30BL,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN017-30BL,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN017-30BL,118 reliable?

The price and inventory of PSMN017-30BL,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN017-30BL,118 is usually 5 days.

3.What payment methods are accepted for PSMN017-30BL,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN017-30BL,118 transactions.

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4.How is shipping managed for PSMN017-30BL,118?

PSMN017-30BL,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN017-30BL,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN017-30BL,118?

For technical support, including PSMN017-30BL,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN017-30BL,118 requirements.

6.How does Aetrix verify that PSMN017-30BL,118 is sourced from the original manufacturer or authorized distributors?

All PSMN017-30BL,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN017-30BL,118 meets industry standards.

7.What is the process for return or replacement of PSMN017-30BL,118?

All PSMN017-30BL,118 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN017-30BL,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN017-30BL,118 part is unused and in its original packaging.

Return procedure for PSMN017-30BL,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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