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Nexperia USA Inc. PSMN017-30PL,127

Part No.:
PSMN017-30PL,127
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixPSMN017-30PL,127.pdf
Description:
MOSFET N-CH 30V 32A TO220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:208

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Product details

Overview

PSMN017-30PL from Nexperia is a logic-level N-channel MOSFET in TO-220AB package, rated for 30 V VDS, 17 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C, and qualified to 175 °C junction temperature. It delivers 32 A continuous drain current at Tmb = 25 °C and supports high-efficiency load switching in industrial power supplies and motor control circuits.

For engineers reviewing the PSMN017-30PL datasheet, PSMN017-30PL pinout, PSMN017-30PL application, or PSMN017-30PL equivalent, this device is selected for its low gate-threshold compatibility (VGS(th) = 1.3–2.15 V), robust avalanche energy rating (13 mJ), and thermal resistance of 3.24 K/W from junction to mounting base - critical for thermally constrained board-level designs.

Technical Context

This MOSFET employs planar silicon technology with optimized channel geometry to achieve low RDS(on) while maintaining stable threshold voltage across -55 °C to 175 °C. Its gate charge profile (QG(tot) = 5.1 nC at VGS = 4.5 V) enables fast switching with minimal drive loss in DC-DC converters operating up to several hundred kHz.

The integrated source-drain diode exhibits 0.89–1.2 V forward voltage at 10 A and 25 °C, with 17.3 ns reverse recovery time and 6.5 nC recovered charge - suitable for synchronous rectification and freewheeling in non-isolated topologies where body diode conduction occurs.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 30 V - Maximum blocking voltage before avalanche onset; defines use in ≤24 V systems with margin.
RDS(on) 13.4 mΩ (typ) at VGS = 10 V, Tj = 25 °C - Enables <1 W conduction loss at 20 A, reducing heatsink requirements.
VGS(th) 1.7 V (typ) - Ensures full enhancement with 3.3 V or 5 V logic-level drivers without level-shifting circuitry.
QG(tot) 5.1 nC at VGS = 4.5 V - Supports efficient gate driving with low-power controllers; reduces switching loss in high-frequency operation.
EAS 13 mJ (unclamped) - Provides single-pulse avalanche ruggedness during inductive turn-off transients in motor drives.
Rth(j-mb) 3.24 K/W - Direct thermal path to heatsink enables >25 W dissipation with modest heatsink surface area.
ID 32 A (continuous, Tmb = 25 °C) - Package-limited current capacity; derates to 26.9 A at Tmb = 100 °C per Figure 1.

Pinout & Package

PSMN017-30PL uses the SOT78 (TO-220AB) plastic single-ended package with heatsink mounting and three leads. The mounting base is electrically connected to the drain terminal.

Pin/Terminal Circuit Role Design Meaning
1 Gate (G) Control input; requires ≤20 V drive; 2.03 Ω internal gate resistance limits ringing and simplifies snubber design.
2 Drain (D) Main power output node; electrically tied to mounting base - must be isolated from heatsink unless system ground reference permits.
3 Source (S) Power return path; forms common reference for gate drive; carries full load current and diode reverse recovery charge.

Key Features

Feature Design Value
Logic-level gate drive compatibility VGS(th) as low as 1.3 V ensures reliable turn-on with 3.3 V microcontrollers and PWM controllers without external level shifters.
High-temperature qualification Rated for continuous operation up to 175 °C junction temperature - supports sealed industrial enclosures and high-ambient server power supplies.
Low RDS(on) at 4.5 V 18.7 mΩ (typ) at VGS = 4.5 V enables efficient operation even with marginal gate drive voltage in noisy environments.
Avalanche-rated construction 13 mJ non-repetitive EAS allows safe handling of inductive kickback in motor control and relay driving without external clamping.
Optimized dynamic characteristics QGD/QG(tot) ratio of ~0.38 improves Miller immunity and enables stable switching in hard-switched topologies.

Applications

DC-to-DC Converters Load Switching

Use Scenario: Primary-side switch in 12 V input, 5 V/20 A buck converter for telecom infrastructure.

IC Role / Device Role / Timing Role: High-side power switch with 500 kHz PWM duty cycle; handles peak currents up to 32 A during transient loads.

Use Value: Low QG(tot) and RDS(on) reduce total switching + conduction losses to <1.8 W, enabling natural convection cooling.

Use Scenario: Hot-swap controller for redundant 24 V power rails in industrial PLC backplanes.

IC Role / Device Role / Timing Role: Inrush-current limiting switch with controlled turn-on via RC-gated gate drive.

Use Value: 175 °C rating and 152 A pulsed current capability prevent thermal shutdown during repeated hot-plug events.

Motor Control Server Power Supplies

Use Scenario: Half-bridge leg in 24 V brushed DC motor driver for HVAC actuators.

IC Role / Device Role / Timing Role: Low-side switching element in H-bridge; commutates bidirectional current up to 30 A.

Use Value: Fast 5.1 ns fall time and 17.3 ns diode trr minimize shoot-through risk and reduce dead-time overhead.

Use Scenario: OR-ing FET in redundant 12 V intermediate bus architecture for cloud server racks.

IC Role / Device Role / Timing Role: Reverse-polarity protection and current-sharing switch with active gate control.

Use Value: 32 A continuous rating and 3.24 K/W Rth(j-mb) support parallel operation with <2 °C thermal mismatch at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IRF3710PBF Higher RDS(on) (21 mΩ @ 10 V), higher QG(tot) (73 nC), TO-220 package but not 175 °C qualified. Limited to ≤150 °C ambient; unsuitable for sealed server chassis or high-temp industrial enclosures. Choose only if cost sensitivity outweighs thermal performance and avalanche robustness requirements.
STP30NF20 Higher VDS (200 V), higher RDS(on) (36 mΩ @ 10 V), lower ID (30 A), same TO-220AB package. Better for 48 V systems but less efficient in 12–24 V applications due to higher conduction loss. Select when higher voltage margin is required and efficiency at low VDS is secondary to system voltage headroom.

Compared with IRF3710PBF and STP30NF20, PSMN017-30PL offers superior thermal capability (175 °C vs. 150/175 °C), lower gate charge (5.1 nC vs. 73/35 nC), and tighter RDS(on) tolerance - making it optimal for high-density, high-efficiency 24 V industrial power stages where thermal management and switching speed are critical.

Availability

PSMN017-30PL is available at Aetrix Electronics and suitable for DC-to-DC converters, load switching, motor control, and server power supplies requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for PSMN017-30PL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs.

This part belongs to Nexperia's logic-level Power MOSFET product line, engineered for high-efficiency power conversion in industrial, communications, and computing equipment where thermal resilience and gate-drive simplicity are essential.

FAQ

Is PSMN017-30PL suitable for 3.3 V microcontroller gate drive?

Yes. With a typical gate threshold voltage of 1.7 V and guaranteed turn-on at VGS ≥ 2.5 V, PSMN017-30PL fully enhances using standard 3.3 V GPIO outputs. Its RDS(on) remains 18.7 mΩ (typ) at VGS = 4.5 V, ensuring low conduction loss without external level shifting.

What is the maximum continuous drain current at 100 °C mounting base temperature?

At Tmb = 100 °C, the continuous drain current is 26.9 A (per Table 4 Limiting Values). This derating reflects thermal constraints of the TO-220AB package; actual usable current depends on heatsink thermal resistance and ambient airflow.

Does the mounting base require electrical isolation from the heatsink?

Yes. Pin 2 (Drain) and the mounting base are internally connected. If the drain node is not at system ground potential, the heatsink must be electrically insulated using mica washers or silicone pads to prevent short circuits and ensure safety compliance.

How does its avalanche ruggedness compare to standard industrial MOSFETs?

With 13 mJ unclamped avalanche energy (EAS), PSMN017-30PL exceeds typical industrial MOSFETs rated at 5–8 mJ. This enables reliable operation in inductive load switching without external snubbers - verified under VGS = 10 V, ID = 32 A, and RGS = 50 Ω conditions.

PSMN017-30PL,127 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
32A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
17mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
10.7 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
552 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
45W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB

PSMN017-30PL,127 FAQ

1.How can I place an order for PSMN017-30PL,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN017-30PL,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN017-30PL,127 reliable?

The price and inventory of PSMN017-30PL,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN017-30PL,127 is usually 5 days.

3.What payment methods are accepted for PSMN017-30PL,127?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN017-30PL,127 transactions.

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4.How is shipping managed for PSMN017-30PL,127?

PSMN017-30PL,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN017-30PL,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN017-30PL,127?

For technical support, including PSMN017-30PL,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN017-30PL,127 requirements.

6.How does Aetrix verify that PSMN017-30PL,127 is sourced from the original manufacturer or authorized distributors?

All PSMN017-30PL,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN017-30PL,127 meets industry standards.

7.What is the process for return or replacement of PSMN017-30PL,127?

All PSMN017-30PL,127 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN017-30PL,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN017-30PL,127 part is unused and in its original packaging.

Return procedure for PSMN017-30PL,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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