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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN017-80PS,127

Name: PSMN017-80PS,127
Brand: Nexperia USA Inc.
SKU: PSMN017-80PS,127
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN017-80PS,127

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: PSMN017-80PS,127.pdf

Description:: MOSFET N-CH 80V 50A TO220AB

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Product details

Overview

PSMN017-80PS from Nexperia is a standard-level N-channel MOSFET in TO-220AB package, rated for 80 V drain-source voltage, 17 mΩ R_DS(on) at 10 A/25 °C, and 175 °C junction temperature. It delivers high efficiency in power switching roles with low conduction and switching losses, and is optimized for use with standard 10 V gate drive sources in industrial DC-DC converters and server power supplies.

For engineers reviewing the PSMN017-80PS datasheet, PSMN017-80PS pinout, PSMN017-80PS application, or PSMN017-80PS equivalent, key selection criteria include its 80 V V_DS, 50 A continuous drain current at T_mb = 25 °C, 1.0 K/W typical thermal resistance (junction-to-mounting base), avalanche energy rating of 55 mJ, and compatibility with non-isolated heatsink mounting.

Technical Context

This MOSFET employs a planar silicon process optimized for rugged standard-level operation, supporting unclamped inductive switching with 55 mJ non-repetitive avalanche energy. Its gate threshold voltage ranges from 2–4 V at 25 °C and remains functional down to 1 V at 175 °C, enabling reliable turn-on under elevated temperature conditions.

The device features low input capacitance (1573 pF) and reverse transfer capacitance (88 pF), contributing to fast switching transitions (t_d(on) = 14 ns, t_f = 8 ns) while maintaining robustness against Miller-induced shoot-through. Its source-drain diode exhibits 0.79 V forward voltage at 10 A and 25 °C, with 41 ns reverse recovery time.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage before breakdown; supports 48 V and 54 V bus systems with margin.
R_DS(on)	13.7–17 mΩ @ 10 A, 25 °C - Low on-resistance enables <1.7 W conduction loss at 10 A, reducing thermal load.
I_D	50 A @ T_mb = 25 °C - Continuous current rating assumes direct heatsink mounting; derates to 35 A at T_mb = 100 °C.
E_AS	55 mJ - Non-repetitive avalanche energy rating confirms robustness in inductive load switching without external snubbers.
R_th(j-mb)	1.0 K/W typ - Thermal resistance from junction to mounting base enables ~100 °C temperature rise per 100 W dissipation.
Q_G(tot)	26 nC - Total gate charge determines driver strength requirement; compatible with standard logic-level gate drivers.
V_GS(th)	2–4 V @ 25 °C - Threshold voltage ensures full enhancement with 5 V logic or 10 V supply, minimizing risk of partial turn-on.

Pinout & Package

PSMN017-80PS uses the TO-220AB (SOT78) plastic single-ended package with heatsink mounting and three leads. The mounting base (mb) is electrically connected to the drain terminal, requiring electrical isolation when mounted to chassis or shared heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control electrode; requires ≤20 V gate-source voltage; internal gate resistance is 1 Ω (AC).
2 (D)	Drain	Main high-side current path; electrically tied to mounting base; must be isolated from heatsink unless drain-referenced layout.
3 (S)	Source	Return path for load current; defines reference for gate drive; connects to internal body diode cathode.

Key Features

Feature	Design Value
High-temperature qualification	Rated for continuous operation up to 175 °C junction temperature-enables use in sealed industrial enclosures without forced air.
Low R_DS(on) drift with temperature	R_DS(on) increases only 2.4× from 25 °C to 175 °C (13.7 → 32.6 mΩ), preserving efficiency in thermally stressed conditions.
Standard-level gate drive compatibility	Operates fully enhanced with 10 V gate drive-eliminates need for level-shifting or dedicated gate drivers in 12 V control rails.
Integrated source-drain diode	Body diode with 41 ns t_rr and 55 nC Q_r supports synchronous rectification and freewheeling in buck and half-bridge topologies.

Applications

DC-DC Converters

Server Power Supplies

Use Scenario: Primary-side switch in 48 V input, 12 V output isolated forward or LLC resonant converters.

IC Role / Device Role / Timing Role: High-side power switch handling 20–40 A continuous current with 100 kHz–1 MHz switching frequency.

Use Value: 17 mΩ R_DS(on) minimizes conduction loss at high load; 55 mJ avalanche rating tolerates transformer leakage energy without clamping.

Use Scenario: OR-ing FET or hot-swap controller in redundant 12 V intermediate bus architectures.

IC Role / Device Role / Timing Role: Load-switching element controlling power delivery to downstream VRMs or backplane modules.

Use Value: 50 A continuous rating and 200 A pulsed capability support inrush current limiting; TO-220AB allows direct bolt-down thermal management.

Motor Control

Industrial Load Switching

Use Scenario: Half-bridge leg in 24–48 V BLDC motor drives for HVAC blowers or conveyor systems.

IC Role / Device Role / Timing Role: Low-side or high-side switching element operating with 10–20 kHz PWM and bidirectional current flow.

Use Value: Fast 8 ns fall time and low C_oss (154 pF) reduce switching loss; body diode supports regenerative braking without external diodes.

Use Scenario: Solid-state relay replacement for PLC output stages controlling solenoids, contactors, or heating elements.

IC Role / Device Role / Timing Role: Direct-load switching device interfacing with 5–24 V logic controllers and 24–80 V DC loads.

Use Value: 80 V V_DS accommodates 48 V nominal systems with surge margin; 175 °C rating ensures reliability in cabinet-mounted control panels.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP80NF55-08	80 V, 55 A, 8 mΩ @ 25 °C; higher current but larger die and higher Q_G (70 nC); TO-220FP package with insulated tab.	Requires stronger gate driver due to higher Q_G; better suited for lower-frequency, higher-current motor drives.	Select when higher peak current (>50 A) and lower R_DS(on) are prioritized over switching speed and gate drive simplicity.
IRFZ44NPBF	55 V, 49 A, 28 mΩ @ 25 °C; lower voltage rating, higher R_DS(on), and no 175 °C qualification.	Limited to 36 V bus systems; unsuitable for 48 V industrial or server applications requiring long-term thermal stability.	Acceptable only in cost-sensitive, low-voltage (<40 V), ambient-temperature-limited designs where 175 °C operation is unnecessary.

Compared with STP80NF55-08 and IRFZ44NPBF, PSMN017-80PS offers optimal balance of 80 V rating, 17 mΩ on-resistance, 175 °C qualification, and 26 nC gate charge-making it uniquely suitable for thermally demanding, medium-power industrial switching where gate drive simplicity and avalanche ruggedness are critical.

Availability

PSMN017-80PS is available at Aetrix Electronics and suitable for DC-DC converters, server power supplies, and industrial motor control applications requiring stable component supply, long-lifecycle assurance, and traceable sourcing for production ramp-up.

Supply support for PSMN017-80PS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors-including MOSFETs, diodes, ESD protection, and logic devices-with manufacturing rooted in process optimization and automotive-grade quality systems.

The PSMN series targets industrial and communications power switching, emphasizing ruggedness, thermal stability, and gate-drive compatibility for applications where long-term reliability under thermal stress is mandatory.

FAQ

Is PSMN017-80PS suitable for surface-mount assembly?

No. PSMN017-80PS uses the through-hole TO-220AB (SOT78) package with a metal mounting base designed for mechanical screw attachment to heatsinks. It lacks SMD-compatible terminals or thermal pad geometry and requires wave soldering or hand soldering with proper lead forming and torque-controlled heatsink mounting.

What is the maximum safe operating temperature for continuous use?

The absolute maximum junction temperature is 175 °C, and the device is fully characterized and qualified for continuous operation at this limit. However, sustained operation above 150 °C requires careful thermal design-R_th(j-mb) = 1.0 K/W means 100 W dissipation raises junction temperature by 100 K above mounting base temperature.

Does the mounting base require electrical isolation from the heatsink?

Yes. Pin 2 (Drain) and the mounting base are internally connected. If the heatsink is grounded or referenced to a different potential, an electrically isolating pad (e.g., mica or polymer film) and shoulder washer must be used to prevent short circuits. Isolation voltage rating must exceed system's maximum drain voltage plus safety margin.

Can PSMN017-80PS replace a logic-level MOSFET in 5 V gate drive circuits?

No. PSMN017-80PS is a standard-level MOSFET with V_GS(th) = 2–4 V and specified R_DS(on) at V_GS = 10 V. At 5 V gate drive, R_DS(on) rises significantly (≈2× or more), increasing conduction loss and thermal stress. It is not characterized or guaranteed for full enhancement below 10 V.

PSMN017-80PS,127 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 17mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 26 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1573 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 103W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

PSMN017-80PS,127 FAQ

1.How can I place an order for PSMN017-80PS,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN017-80PS,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN017-80PS,127 reliable?

The price and inventory of PSMN017-80PS,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN017-80PS,127 is usually 5 days.

3.What payment methods are accepted for PSMN017-80PS,127?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN017-80PS,127 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN017-80PS,127?

PSMN017-80PS,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN017-80PS,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN017-80PS,127?

For technical support, including PSMN017-80PS,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN017-80PS,127 requirements.

6.How does Aetrix verify that PSMN017-80PS,127 is sourced from the original manufacturer or authorized distributors?

All PSMN017-80PS,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN017-80PS,127 meets industry standards.

7.What is the process for return or replacement of PSMN017-80PS,127?

All PSMN017-80PS,127 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN017-80PS,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN017-80PS,127 part is unused and in its original packaging.

Return procedure for PSMN017-80PS,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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