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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN018-100PSFQ

Name: PSMN018-100PSFQ
Brand: Nexperia USA Inc.
SKU: PSMN018-100PSFQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN018-100PSFQ

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: PSMN018-100PSFQ.pdf

Description:: MOSFET N-CH 100V 53A TO220AB

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Product details

Overview

PSMN018-100PSF from Nexperia is a 100 V, 18 mΩ N-channel enhancement-mode MOSFET in TO-220AB (SOT78) package, optimized for high-efficiency switching in industrial and consumer power stages. It delivers 53 A continuous drain current at T_mb = 25 °C, features low Q_G × R_DS(on) figure-of-merit (21.4 nC × 14.9 mΩ), and is 100% avalanche tested to 109 mJ for rugged operation in hard-switching topologies like half-bridge motor drives.

For engineers reviewing the PSMN018-100PSF datasheet, PSMN018-100PSF pinout, PSMN018-100PSF application, or PSMN018-100PSF equivalent, key selection criteria include its 1.22 K/W junction-to-mounting-base thermal resistance, fast 40 ns reverse recovery time, and gate threshold voltage of 3.2 V (typ) with -7.1 mV/K temperature coefficient-critical for stable gate drive design across -55 °C to 175 °C operating range.

Technical Context

This NextPower MOSFET employs a trench-gate superjunction structure enabling low R_DS(on) while maintaining robust 100 V breakdown voltage (V_(BR)DSS ≥ 100 V at 25 °C). Its gate charge profile shows 4.2 nC Q_GD and 10.9 nC Q_GS, supporting fast turn-on/turn-off with minimal Miller-induced oscillation in high-frequency DC-DC converters.

The integrated body diode exhibits low Q_rr (46 nC) and fast t_rr (40 ns) under dI_S/dt = -100 A/µs conditions, reducing switching losses in synchronous rectification. Thermal performance is defined by R_th(j-mb) = 1.22 K/W, enabling 111 W total power dissipation at T_mb = 25 °C with heatsink mounting.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for use in 48 V–80 V bus systems with safety margin
R_DS(on) @ 10 V, 25 °C	14.9 mΩ - Enables ≤ 11.2 W conduction loss at 30 A, critical for thermal management
I_D (continuous)	53 A @ T_mb = 25 °C - Supports high-current motor phases and UPS inverters without parallel devices
Q_G(tot)	21.4 nC - Low gate drive energy reduces controller IC loading and EMI in 100–500 kHz SMPS
t_rr	40 ns - Minimizes dead-time losses and shoot-through risk in synchronous buck converters
E_AS	109 mJ - Withstands unclamped inductive switching events in flyback and resonant LLC designs
R_th(j-mb)	1.22 K/W - Allows direct heatsink mounting for compact thermal solutions without thermal interface pads

Pinout & Package

TO-220AB (SOT78) plastic single-ended package with heatsink-mounted base; 3 leads on 2.54 mm pitch; 15.6 mm × 10 mm × 4.4 mm body; mounting base electrically connected to drain.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal requiring ≥ 10 V for full enhancement; gate-source threshold is 3.2 V (typ)
2 (D)	Drain	Main high-side switching node; internally bonded to mounting base for low-inductance heatsinking
3 (S)	Source	Power return path and reference for gate drive; isolated from mounting base
Mounting base (mb)	Drain connection	Provides low-thermal-resistance path to heatsink and serves as drain terminal extension

Key Features

Feature	Design Value
Optimized fast switching	Q_GD/Q_G(tot) ratio of 0.20 enables clean voltage transitions with minimal Miller plateau duration
Low body diode Q_rr	46 nC recovered charge reduces reverse recovery losses in synchronous rectifiers and half-bridges
Avalanche ruggedness	100% tested E_AS = 109 mJ ensures reliability in inductive load switching without external snubbers
High-temperature rating	Rated for continuous operation up to T_j = 175 °C, supporting sealed industrial enclosures
RoHS & halogen-free	Compliant with environmental regulations for consumer and industrial end-equipment certification

Applications

Brushed & BLDC Motor Control

UPS & Solar Inverter

Use Scenario: Full-bridge H-bridge driver for 24–48 V DC motors in power tools and HVAC blowers.

IC Role / Device Role / Timing Role: High-side and low-side switch handling bidirectional current up to 53 A peak with <40 ns diode recovery.

Use Value: Eliminates need for external freewheeling diodes and reduces system size by 30% versus discrete diode + MOSFET solutions.

Use Scenario: DC-link switching stage in 1–3 kVA uninterruptible power supplies and string inverters.

IC Role / Device Role / Timing Role: 100 V-rated power switch managing battery-to-bus conversion with 109 mJ avalanche energy tolerance.

Use Value: Survives grid transients and battery overvoltage events without derating, extending field lifetime beyond 10 years.

Synchronous Rectification

Battery Protection Circuit

Use Scenario: Secondary-side switch in 65–100 W AC-DC adapters and telecom DC-DC modules.

IC Role / Device Role / Timing Role: Replaces Schottky diode in forward/flyback converters, controlled by synchronous rectifier driver.

Use Value: Cuts conduction losses by 45% vs. 40 V Schottky, improving efficiency from 89% to 93% at full load.

Use Scenario: Charge/discharge FET in lithium-ion battery packs for e-bikes and portable medical devices.

IC Role / Device Role / Timing Role: Bidirectional current switch with low R_DS(on) (14.9 mΩ) minimizing voltage drop during 30 A discharge pulses.

Use Value: Reduces thermal rise to <15 K at 25 A, enabling compact PCB layout without forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP100N10F7	R_DS(on) = 11.5 mΩ @ 10 V but higher Q_G = 32 nC; 100 V rating; TO-220FP package (isolated tab)	Higher conduction loss margin but slower switching; better suited for lower-frequency (<100 kHz) UPS where thermal mass dominates	Select when lower R_DS(on) outweighs gate drive complexity and EMI concerns
IRF540NPBF	R_DS(on) = 44 mΩ @ 10 V; 100 V rating; TO-220AB; no avalanche rating or Q_rr spec	Lacks avalanche testing and fast body diode; unsuitable for hard-switched or resonant topologies	Only consider for cost-sensitive, low-frequency linear or switching applications with soft switching

Compared with STP100N10F7 and IRF540NPBF, PSMN018-100PSF offers superior switching efficiency (21.4 nC Q_G) and guaranteed avalanche ruggedness (109 mJ), making it optimal for high-frequency, high-reliability industrial power stages where both conduction and switching losses must be minimized.

Availability

PSMN018-100PSF is available at Aetrix Electronics and suitable for brushed motor control, UPS inverters, and synchronous rectification requiring stable component supply across industrial production cycles.

Supply support for PSMN018-100PSF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability logic, discrete, and MOSFET solutions, serving automotive, industrial, and consumer markets with ISO/TS 16949-certified manufacturing.

This device belongs to the NextPower series-a family of 100 V trench-MOSFETs engineered specifically for high-efficiency, high-ruggedness switching in industrial motor drives and renewable energy inverters.

FAQ

What is the maximum continuous drain current for PSMN018-100PSF at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is derated to 37 A per the datasheet's Fig. 2. This reflects thermal limitations of the TO-220AB package under real-world heatsink conditions, not electrical degradation. The device maintains full 100 V V_DS rating and 14.9 mΩ R_DS(on) up to 175 °C junction temperature.

Does PSMN018-100PSF require negative gate voltage for safe turn-off in half-bridge configurations?

No. The device has a gate threshold voltage of 2–4 V and is fully enhanced at V_GS = 10 V. Turn-off is reliably achieved at V_GS = 0 V; applying -5 V is unnecessary and not specified in the datasheet. Its strong gate oxide withstands ±20 V V_GS limits without degradation.

How does the body diode performance compare to standard silicon diodes in flyback applications?

The integrated body diode achieves t_rr = 40 ns and Q_r = 46 nC-comparable to fast recovery diodes rated for 100 V/30 A. This enables zero-voltage switching in quasi-resonant flyback converters without external diode replacement, reducing BOM count and PCB area while maintaining low EMI.

Is PSMN018-100PSF suitable for automotive applications?

No. The datasheet explicitly states this is a non-automotive qualified product. It lacks AEC-Q101 qualification, automotive-grade screening, and extended temperature validation beyond 175 °C junction. For automotive use, Nexperia's Automotive Qualified NextPower series (e.g., PSMN1R0-100PSF) must be selected instead.

PSMN018-100PSFQ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 53A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7V, 10V

Rds On (Max) @ Id, Vgs:: 18mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 21.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1482 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 111W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

PSMN018-100PSFQ FAQ

1.How can I place an order for PSMN018-100PSFQ through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN018-100PSFQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN018-100PSFQ reliable?

The price and inventory of PSMN018-100PSFQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN018-100PSFQ is usually 5 days.

3.What payment methods are accepted for PSMN018-100PSFQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN018-100PSFQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN018-100PSFQ?

PSMN018-100PSFQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN018-100PSFQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN018-100PSFQ?

For technical support, including PSMN018-100PSFQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN018-100PSFQ requirements.

6.How does Aetrix verify that PSMN018-100PSFQ is sourced from the original manufacturer or authorized distributors?

All PSMN018-100PSFQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN018-100PSFQ meets industry standards.

7.What is the process for return or replacement of PSMN018-100PSFQ?

All PSMN018-100PSFQ units undergo pre-shipment inspection (PSI). If there is an issue with PSMN018-100PSFQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN018-100PSFQ part is unused and in its original packaging.

Return procedure for PSMN018-100PSFQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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