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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN019-100YLX

Name: PSMN019-100YLX
Brand: Nexperia USA Inc.
SKU: PSMN019-100YLX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN019-100YLX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PSMN019-100YLX.pdf

Description:: MOSFET N-CH 100V 56A LFPAK56

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Product details

Overview

PSMN019-100YL from Nexperia is a logic-level N-channel MOSFET with 100 V V_DS, 19 mΩ R_DS(on) at V_GS = 5 V and 15 A, housed in LFPAK56 (SOT669) package. It delivers high power density for synchronous rectification, USB-PD chargers, and battery-powered motor control where low gate drive voltage and avalanche ruggedness are critical.

For engineers reviewing the PSMN019-100YL datasheet, PSMN019-100YL pinout, PSMN019-100YL application, or PSMN019-100YL equivalent, key selection criteria include logic-level gate compatibility (V_GS(th) typ. 1.7 V), 94.1 mJ unclamped avalanche energy, 0.9 K/W R_th(j-mb), and LFPAK56 thermal performance under T_mb-limited conditions.

Technical Context

This MOSFET employs TrenchMOS technology to achieve low R_DS(on) and low Q_G (39 nC total gate charge), enabling efficient switching in high-frequency DC-DC converters. Its gate threshold voltage ranges from 0.5 V (T_j = 175 °C) to 2.45 V (T_j = −55 °C), ensuring robust turn-on across industrial temperature extremes.

The device integrates an avalanche-rated body diode with 38 ns reverse recovery time and 56 nC recovered charge, supporting reliable operation in inductive load switching. Mounting base (mb) is electrically connected to drain, requiring isolation-aware PCB layout for thermal and electrical integrity.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum drain-source blocking voltage; supports 48 V bus systems with 2× safety margin.
R_DS(on)	14.6 mΩ typ. @ V_GS = 5 V, I_D = 15 A, T_j = 25 °C - Enables <1.2 W conduction loss at 30 A continuous current with proper heatsinking.
I_D	56 A @ T_mb = 25 °C - Continuous drain current rating referenced to mounting base temperature, not case or ambient.
E_AS	94.1 mJ - Single-pulse unclamped avalanche energy; allows safe operation during inductive switching transients without external snubbers.
R_th(j-mb)	0.9 K/W - Thermal resistance from junction to mounting base; enables >150 W power dissipation with 135 K ΔT to board copper.
Q_G(tot)	39 nC - Total gate charge at V_GS = 10 V; determines driver strength requirement for <100 ns switching transitions.
C_iss	3814 pF typ. - Input capacitance at V_DS = 25 V; impacts gate drive loop stability and EMI filtering design.

Pinout & Package

LFPAK56 (SOT669) is a surface-mount plastic package with exposed mounting base for enhanced thermal transfer. The drain is internally connected to the mounting base (mb), while pins 1–3 are source terminals and pin 4 is gate.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source leads reduce bond wire inductance and improve current sharing in high-di/dt applications.
4	Gate (G)	Single gate input with low input capacitance (C_iss = 3814 pF); compatible with standard 5 V logic drivers.
mb	Mounting Base / Drain (D)	Electrically tied to drain; must be soldered to large copper pour for thermal management and electrical connection.

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) max 2.1 V at 25 °C ensures full enhancement with 3.3 V or 5 V microcontroller outputs.
Avalanche ruggedness	100 % production-tested for 94.1 mJ single-pulse energy-eliminates need for external clamping in motor drive flyback paths.
Low R_DS(on) × Q_G figure of merit	14.6 mΩ × 39 nC = 570 mΩ·nC-optimizes trade-off between conduction and switching losses in 100–500 kHz SMPS designs.
LFPAK56 thermal performance	0.9 K/W R_th(j-mb) enables 167 W P_tot at T_mb = 25 °C-exceeds SO-8 by >3× power density for same footprint.
Body diode recovery	t_rr = 38 ns, Q_r = 56 nC-reduces reverse recovery losses and EMI in synchronous rectifier configurations.

Applications

USB-PD Fast Charging

Synchronous Rectification

Use Scenario: 20 V/5 A USB Power Delivery adapter with secondary-side synchronous rectification.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch replacing Schottky diode in LLC resonant converter output stage.

Use Value: Reduces conduction loss by >60 % vs. 40 V Schottky, enabling >95 % efficiency at full load with V_GS = 5 V gate drive from controller.

Use Scenario: 12 V/30 A telecom power supply using active clamp forward topology.

IC Role / Device Role / Timing Role: Primary-side high-side switch with integrated avalanche capability for clamp energy recycling.

Use Value: Withstands 94.1 mJ unclamped avalanche events during clamp capacitor discharge, eliminating need for external Zener clamping.

Battery-Powered Motor Control

LED TV Backlight Driver

Use Scenario: 24 V cordless power tool H-bridge with PWM-driven brushed DC motor.

IC Role / Device Role / Timing Role: Low-side FET in half-bridge configuration, switched at 20 kHz with 5 V gate drive.

Use Value: 14.6 mΩ R_DS(on) limits I²R loss to <1.3 W at 30 A peak, reducing heatsink size by 40 % versus TO-252 alternatives.

Use Scenario: 48 V constant-current LED backlight driver for 55″ LCD TV with dimming via PWM.

IC Role / Device Role / Timing Role: High-side current sink switch controlling LED string current in buck-derived topology.

Use Value: Avalanche rating and 100 V V_DS safely absorb inductive kickback from LED string during fast PWM turn-off (t_f = 34.3 ns).

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP040N10N5	R_DS(on) = 4.0 mΩ @ 10 V, but requires 10 V gate drive; V_GS(th) min 2.2 V - not logic-level compatible.	Higher efficiency in 12 V systems with dedicated 10 V gate driver; unsuitable for 3.3 V MCU direct drive.	Select only if gate drive voltage ≥8 V is available and R_DS(on) reduction justifies higher cost and non-drop-in layout change.
Vishay SIHF10N100D	TO-247 package; R_DS(on) = 100 mΩ @ 10 V; no avalanche rating specified; R_th(j-c) = 1.0 K/W.	Larger footprint and lower power density; lacks production-tested avalanche ruggedness for motor control.	Use only for legacy through-hole designs where LFPAK56 reflow is unavailable; avoid in new USB-PD or synchronous rectifier designs.

Compared with IPP040N10N5 and SIHF10N100D, PSMN019-100YL uniquely combines logic-level drive (≤5 V), industry-leading power density in LFPAK56, and 100 % tested avalanche capability-making it the optimal choice for space-constrained, MCU-driven, inductive-load applications where reliability and thermal headroom are critical.

Availability

PSMN019-100YL is available at Aetrix Electronics and suitable for USB-PD fast charging adapters, synchronous rectification in telecom power supplies, and battery-powered motor control systems requiring stable component supply across multi-year production cycles.

Supply support for PSMN019-100YL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs.

The PSMN019-100YL belongs to Nexperia's TrenchMOS logic-level power MOSFET product line, engineered specifically for high-efficiency, thermally constrained power conversion in consumer, computing, and industrial equipment.

FAQ

Is PSMN019-100YL suitable for 3.3 V microcontroller gate drive?

Yes. With V_GS(th) typ. 1.7 V and max 2.1 V at 25 °C, the device fully enhances at 3.3 V gate voltage, delivering R_DS(on) ≤ 25 mΩ (per datasheet Fig. 7). This enables direct drive from common 3.3 V MCUs without level-shifting circuitry.

What is the maximum continuous drain current at 100 °C mounting base temperature?

Per Figure 2 in the datasheet, the continuous drain current is derated to 40 A at T_mb = 100 °C. This value is defined under steady-state thermal conditions with proper PCB copper area and is not ambient-temperature referenced.

Does the mounting base require electrical isolation from PCB ground?

Yes. The mounting base is internally connected to the drain terminal. If the drain node is at high voltage (e.g., 100 V bus), the mounting base must be isolated from PCB ground using non-conductive thermal interface material and insulated copper pour, unless system architecture intentionally references drain to ground.

How does its avalanche rating compare to standard SO-8 MOSFETs?

PSMN019-100YL is 100 % production-tested for 94.1 mJ unclamped avalanche energy-exceeding typical SO-8 MOSFETs (e.g., IRF7470: ~15 mJ). This is enabled by TrenchMOS cell design and LFPAK56's superior thermal coupling, allowing safe operation in motor commutation and inductive switching without external protection.

PSMN019-100YLX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 56A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 18mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 72.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5085 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 167W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMN019-100YLX FAQ

1.How can I place an order for PSMN019-100YLX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN019-100YLX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN019-100YLX reliable?

The price and inventory of PSMN019-100YLX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN019-100YLX is usually 5 days.

3.What payment methods are accepted for PSMN019-100YLX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN019-100YLX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN019-100YLX?

PSMN019-100YLX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN019-100YLX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN019-100YLX?

For technical support, including PSMN019-100YLX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN019-100YLX requirements.

6.How does Aetrix verify that PSMN019-100YLX is sourced from the original manufacturer or authorized distributors?

All PSMN019-100YLX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN019-100YLX meets industry standards.

7.What is the process for return or replacement of PSMN019-100YLX?

All PSMN019-100YLX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN019-100YLX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN019-100YLX part is unused and in its original packaging.

Return procedure for PSMN019-100YLX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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