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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

NXP Semiconductors PSMN020-150W,127

Name: PSMN020-150W,127
Brand: NXP Semiconductors
SKU: PSMN020-150W,127
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN020-150W,127

Manufacturer:: NXP Semiconductors

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: PSMN020-150W,127.pdf

Description:: MOSFET N-CH 150V 73A TO247-3

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Product details

Overview

PSMN020-150W from NXP Semiconductors (formerly Philips Semiconductors) is an N-channel TrenchMOS™ power MOSFET in TO-247 (SOT429) package, rated for 150 V drain-source voltage, 73 A continuous drain current at 25 °C mounting base temperature, and 20 mΩ maximum R_DS(ON) at V_GS = 10 V. It serves as a high-efficiency main switch in high-power d.c.-to-d.c. converters and switched-mode power supplies.

For engineers reviewing the PSMN020-150W datasheet, PSMN020-150W pinout, PSMN020-150W application, or PSMN020-150W equivalent, key selection criteria include its low thermal resistance (0.5 K/W junction-to-mounting-base), 707 mJ non-repetitive avalanche energy rating, and fast switching performance with 227 nC total gate charge - critical for optimizing efficiency and reliability in high-frequency, high-current power stages.

Technical Context

The PSMN020-150W employs Philips' proprietary TrenchMOS™ technology to minimize on-state resistance while maintaining robust avalanche capability. Its gate threshold voltage ranges from 2.0 V to 4.0 V at 25 °C, with reduced sensitivity at elevated temperatures (1.0 V min at 175 °C), supporting stable turn-on control across wide thermal operating ranges.

Designed for hard-switched topologies, it features low internal inductances (L_d = 3.5–4.5 nH, L_s = 7.5 nH) and optimized capacitance profile (C_iss = 9537 pF, C_oss = 854 pF, C_rss = 380 pF), enabling predictable switching behavior and reduced voltage overshoot during turn-off in high-dV/dt environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	150 V - Maximum blocking voltage before breakdown; defines use in 100–120 V input SMPS or 48 V/60 V bus systems with margin.
I_D (continuous)	73 A @ T_mb = 25 °C - Sustained current handling capability when mounted on heatsink; derates to 51 A at 100 °C mounting base.
R_DS(ON)	≤20 mΩ @ V_GS = 10 V, I_D = 25 A - Low conduction loss enables <1.5 W dissipation at 30 A, reducing heatsink requirements.
E_AS	707 mJ - Energy absorbed during single unclamped inductive switching events; supports robustness in flyback or LLC resonant converters.
R_{th j-mb}	0.5 K/W - Junction-to-mounting-base thermal resistance; allows ~150 W power dissipation with ≤75 K temperature rise above heatsink.
Q_g(tot)	227 nC - Total gate charge required for full enhancement; determines driver strength needed for <100 ns switching transitions at 10–50 kHz.

Pinout & Package

PSMN020-150W is housed in the SOT429 (TO-247) plastic through-hole package with isolated mounting base. Pin 2 (drain) is electrically connected to the metal tab for direct heatsink coupling, minimizing thermal path resistance.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal; requires ≥10 V drive for full enhancement; gate-source leakage <100 nA ensures low standby current.
2	Drain	Main high-side current path; internally bonded to metal tab for low-inductance, low-thermal-resistance heatsink interface.
3	Source	Power return node; internal source inductance of 7.5 nH impacts switching loop EMI and di/dt-induced voltage spikes.

Key Features

Feature	Design Value
TrenchMOS™ technology	Enables 20 mΩ R_DS(ON) at 150 V rating - among lowest on-resistance per die area in TO-247 class for this voltage grade.
Low R_{th j-mb}	0.5 K/W thermal resistance - delivers >90% of rated power capability without forced-air cooling when properly heatsinked.
High avalanche ruggedness	707 mJ E_AS at 73 A - eliminates need for external snubbers in many hard-switched topologies with moderate inductive loads.
Body diode performance	127 ns reverse recovery time (t_rr) and 1.0 µC Q_rr - enables synchronous rectification compatibility and reduces commutation losses in half-bridge configurations.

Applications

Server PSU Primary Switch	Industrial DC-DC Converter
Use Scenario: High-efficiency 3 kW front-end AC/DC converter with active clamp forward topology operating at 100 kHz. IC Role / Device Role / Timing Role: Main primary-side switching transistor handling 70 A peak currents and 150 V bus transients. Use Value: 20 mΩ R_DS(ON) and 0.5 K/W R_{th j-mb} reduce conduction + thermal losses by ~22% vs. comparable 150 V MOSFETs, improving system efficiency from 93.5% to 94.8%.	Use Scenario: 1.2 kW isolated bidirectional DC-DC module for battery energy storage systems (BESS), operating at 48–800 V input range. IC Role / Device Role / Timing Role: High-side switch in dual-active-bridge (DAB) topology managing 60 A continuous bidirectional current flow. Use Value: 707 mJ avalanche energy rating withstands fault currents during short-circuit events without failure, eliminating need for additional overcurrent protection circuitry.
Solar Inverter DC Link Switch	EV Onboard Charger Boost Stage
Use Scenario: 5 kW string inverter with two-level NPC topology; PSMN020-150W used in DC link switching stage. IC Role / Device Role / Timing Role: Fast-switching, high-current switch handling 100 kHz PWM with 150 V DC bus and 50 A RMS current. Use Value: Low C_iss/C_rss ratio (9537 pF / 380 pF) minimizes Miller effect, enabling clean gate drive and reducing cross-conduction risk during high-dV/dt transitions.	Use Scenario: 6.6 kW OBC boost converter stage converting 200–450 V battery voltage to 800 V DC link for fast-charging EVs. IC Role / Device Role / Timing Role: High-voltage, high-current boost switch operating at 75 kHz with 73 A peak current pulses. Use Value: 290 A pulsed drain current (I_DM) and 300 W total power dissipation support transient overload conditions without thermal runaway during regenerative braking events.

Server PSU Primary Switch

Industrial DC-DC Converter

Use Scenario: High-efficiency 3 kW front-end AC/DC converter with active clamp forward topology operating at 100 kHz.

IC Role / Device Role / Timing Role: Main primary-side switching transistor handling 70 A peak currents and 150 V bus transients.

Use Value: 20 mΩ R_DS(ON) and 0.5 K/W R_{th j-mb} reduce conduction + thermal losses by ~22% vs. comparable 150 V MOSFETs, improving system efficiency from 93.5% to 94.8%.

Use Scenario: 1.2 kW isolated bidirectional DC-DC module for battery energy storage systems (BESS), operating at 48–800 V input range.

IC Role / Device Role / Timing Role: High-side switch in dual-active-bridge (DAB) topology managing 60 A continuous bidirectional current flow.

Use Value: 707 mJ avalanche energy rating withstands fault currents during short-circuit events without failure, eliminating need for additional overcurrent protection circuitry.

Solar Inverter DC Link Switch

EV Onboard Charger Boost Stage

Use Scenario: 5 kW string inverter with two-level NPC topology; PSMN020-150W used in DC link switching stage.

IC Role / Device Role / Timing Role: Fast-switching, high-current switch handling 100 kHz PWM with 150 V DC bus and 50 A RMS current.

Use Value: Low C_iss/C_rss ratio (9537 pF / 380 pF) minimizes Miller effect, enabling clean gate drive and reducing cross-conduction risk during high-dV/dt transitions.

Use Scenario: 6.6 kW OBC boost converter stage converting 200–450 V battery voltage to 800 V DC link for fast-charging EVs.

IC Role / Device Role / Timing Role: High-voltage, high-current boost switch operating at 75 kHz with 73 A peak current pulses.

Use Value: 290 A pulsed drain current (I_DM) and 300 W total power dissipation support transient overload conditions without thermal runaway during regenerative braking events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N15F7	150 V, 110 A, R_DS(ON) = 10.5 mΩ (typ), TO-247; higher current but larger gate charge (320 nC).	Better conduction loss at high I_D, but slower switching due to higher Q_g; suited for lower-frequency (<50 kHz) high-current designs.	Select STP110N15F7 only if conduction loss dominates system loss budget and gate drive capability supports 320 nC.
IRFP4668PBF	150 V, 88 A, R_DS(ON) = 14 mΩ (max), TO-247; lower R_DS(ON) than PSMN020-150W but no published E_AS rating.	Lacks documented avalanche ruggedness data; unsuitable for unclamped inductive switching without external protection.	Prefer PSMN020-150W where robustness against inductive transients is required; IRFP4668PBF fits cost-sensitive, clamped-topology applications.

Compared with STP110N15F7 and IRFP4668PBF, the PSMN020-150W offers balanced trade-offs: superior avalanche ruggedness (707 mJ) versus IRFP4668PBF's missing rating, and lower gate charge (227 nC) versus STP110N15F7's 320 nC - making it optimal for medium-frequency, high-reliability power conversion where both switching efficiency and fault tolerance matter.

Availability

PSMN020-150W is available at Aetrix Electronics and suitable for server power supplies, industrial DC-DC converters, and solar inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for PSMN020-150W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company formed from the spin-off of Philips' semiconductor division, specializing in high-performance analog, logic, and power devices for industrial, automotive, and computing markets.

The PSMN020-150W belongs to NXP's TrenchMOS™ power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in demanding power conversion applications up to 150 V bus voltages.

FAQ

What is the maximum continuous drain current rating for the PSMN020-150W under standard heatsinking conditions?

The PSMN020-150W is rated for 73 A continuous drain current at a mounting base temperature (T_mb) of 25 °C. This rating decreases to 51 A at T_mb = 100 °C, following the derating curve shown in Figure 2 of the datasheet. Proper heatsink design ensuring T_mb ≤ 100 °C is essential to sustain >50 A operation in production systems using the PSMN020-150W.

Does the PSMN020-150W have a specified avalanche energy rating, and how is it tested?

Yes, the PSMN020-150W has a non-repetitive avalanche energy rating (E_AS) of 707 mJ, measured under unclamped inductive load conditions: I_AS = 73 A, t_p = 100 µs, V_DD ≤ 25 V, R_GS = 50 Ω, V_GS = 5 V, and initial junction temperature of 25 °C. This rating is defined per IEC 134 and validated in Figure 15 of the official PSMN020-150W datasheet.

What is the gate threshold voltage range of the PSMN020-150W, and how does it vary with temperature?

The PSMN020-150W has a gate threshold voltage (V_GS(TO)) ranging from 2.0 V to 4.0 V at T_j = 25 °C, and from 1.0 V (min) to 6.0 V (max) across the full operating junction temperature range (−55 °C to 175 °C). This wide specification ensures reliable turn-on even at elevated temperatures, supporting stable operation in thermally stressed PSMN020-150W-based power stages.

Can the PSMN020-150W be used in synchronous rectification configurations?

Yes, the PSMN020-150W's body diode exhibits t_rr = 127 ns and Q_rr = 1.0 µC at T_j = 25 °C, enabling effective use in synchronous rectification. Its low reverse recovery charge minimizes commutation losses and voltage spikes, especially in half-bridge and LLC resonant converters where the PSMN020-150W operates as both switch and controlled rectifier.

What is the thermal resistance from junction to mounting base (R_{th j-mb}) for the PSMN020-150W, and why is it important?

The PSMN020-150W has a maximum thermal resistance of 0.5 K/W from junction to mounting base (R_{th j-mb}). This low value reflects efficient heat transfer from the silicon die directly to the heatsink via the metal tab (Pin 2), enabling high power dissipation (up to 300 W) with minimal temperature rise - a critical advantage for compact, high-density power modules relying on the PSMN020-150W.

PSMN020-150W,127 Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: TrenchMOS™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 73A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 20mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 227 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9537 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247

PSMN020-150W,127 FAQ

1.How can I place an order for PSMN020-150W,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN020-150W,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN020-150W,127 reliable?

The price and inventory of PSMN020-150W,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN020-150W,127 is usually 5 days.

3.What payment methods are accepted for PSMN020-150W,127?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN020-150W,127 transactions.

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4.How is shipping managed for PSMN020-150W,127?

PSMN020-150W,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN020-150W,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN020-150W,127?

For technical support, including PSMN020-150W,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN020-150W,127 requirements.

6.How does Aetrix verify that PSMN020-150W,127 is sourced from the original manufacturer or authorized distributors?

All PSMN020-150W,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN020-150W,127 meets industry standards.

7.What is the process for return or replacement of PSMN020-150W,127?

All PSMN020-150W,127 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN020-150W,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN020-150W,127 part is unused and in its original packaging.

Return procedure for PSMN020-150W,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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