Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN021-100YLX

Name: PSMN021-100YLX
Brand: Nexperia USA Inc.
SKU: PSMN021-100YLX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: PSMN021-100YLX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SC-100, SOT-669

Datasheet:: PSMN021-100YLX.pdf

Description:: MOSFET N-CH 100V 49A LFPAK56

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,665

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

PSMN021-100YL from Nexperia is a logic-level N-channel MOSFET with 100 V V_DS, 17.4 mΩ R_DS(on) at V_GS = 5 V and 15 A, housed in LFPAK56 (SOT669) package. It delivers high power density for synchronous rectification and battery-powered motor control, featuring avalanche rating, TrenchMOS technology, and optimized gate charge for fast switching.

For engineers reviewing the PSMN021-100YL datasheet, PSMN021-100YL pinout, PSMN021-100YL application, or PSMN021-100YL equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.4–2.1 V), thermal resistance (R_th(j-mb) = 1.02 K/W), and robust unclamped avalanche energy (80.8 mJ).

Technical Context

This MOSFET uses Nexperia's TrenchMOS process to achieve low R_DS(on) and low Q_G/Q_GD, enabling efficient operation in high-frequency DC-DC converters and USB-PD power stages. Its gate threshold voltage range (0.5–2.45 V across temperature) ensures reliable turn-on with 3.3 V or 5 V controllers.

The LFPAK56 package integrates a thermally enhanced mounting base directly connected to the drain, enabling high-power dissipation (147 W at T_mb = 25 °C) while maintaining SO8 footprint compatibility. The dual-source-pin configuration (Pins 1–3) reduces source inductance for improved switching stability.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum drain-source blocking voltage for use in 48 V industrial supplies and 36 V battery systems.
R_DS(on)	17.4 mΩ (typ) at V_GS = 5 V, I_D = 15 A, T_j = 25 °C - Enables <1.2 W conduction loss at 20 A, critical for thermal management in compact adapters.
Q_GD	13.3 nC - Low gate-drain charge minimizes Miller-induced switching delay and improves hard-switching efficiency in SMPS.
I_D	49 A continuous at T_mb = 25 °C - Supports high-current load switching in motor drivers without external heatsinking under controlled board layout.
R_th(j-mb)	1.02 K/W - Junction-to-mounting-base thermal resistance enables direct PCB copper pour cooling, reducing thermal design overhead.
E_AS	80.8 mJ (unclamped, single-pulse) - Avalanche ruggedness allows safe operation during inductive load transients without snubbers in BLDC gate drives.
V_GS(th)	1.4–2.1 V at T_j = 25 °C - Ensures full enhancement with standard 3.3 V microcontrollers and logic-level drivers.

Pinout & Package

LFPAK56 (SOT669) is a surface-mount plastic package with exposed mounting base for thermal and electrical connection to drain. Dimensions: 4.41 × 3.62 × 1.20 mm (L × W × H), lead pitch 1.27 mm.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Three parallel source terminals reduce parasitic inductance and improve current sharing in high-di/dt applications like synchronous buck converters.
4	Gate	Single gate input with low input capacitance (C_iss = 3480 pF typ) for easy driving with standard gate drivers.
Mounting Base	Drain	Exposed copper pad electrically and thermally connected to drain - must be soldered to large PCB copper area for thermal performance and EMI control.

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) ≤ 2.1 V ensures full enhancement with 3.3 V or 5 V controllers - eliminates need for level-shifting in portable designs.
Avalanche-rated, 100% tested	80.8 mJ unclamped energy handling enables robust operation in inductive switching without external protection components.
Low Q_G/Q_GD ratio	Q_GD = 13.3 nC / Q_G(tot) = 65.6 nC = 20.3% - reduces Miller plateau duration and improves switching controllability in hard-switched topologies.
TrenchMOS technology	Delivers 17.4 mΩ R_DS(on) in LFPAK56 - achieves >30% lower on-resistance than comparable SO8 MOSFETs at same voltage rating.
Thermally optimized LFPAK56	R_th(j-mb) = 1.02 K/W - enables 147 W power dissipation with minimal PCB copper, reducing board area vs. DPAK or TO-220 alternatives.

Applications

Synchronous Rectification

USB-PD Fast Charging

Use Scenario: Secondary-side switch in 65 W laptop adapter with 20 V output and 3.25 A load.

IC Role / Device Role / Timing Role: High-side synchronous rectifier replacing Schottky diode; driven by controller IC with 5 V gate output.

Use Value: Reduces conduction loss by 65% vs. 40 V Schottky, improving efficiency from 92% to 94.5% at full load.

Use Scenario: Input switch in 100 W USB-PD 3.1 EPR power delivery module supporting 28 V @ 3.5 A.

IC Role / Device Role / Timing Role: Primary-side high-side switch in buck-boost stage; operated at 200 kHz with 5 V gate drive.

Use Value: Low Q_GD and R_DS(on) minimize switching and conduction losses, enabling >96% peak efficiency at 28 V output.

Battery-Powered Motor Control

LED TV Backlight Driver

Use Scenario: Half-bridge low-side switch in cordless power tool driver with 18 V Li-ion pack and 30 A peak load.

IC Role / Device Role / Timing Role: PWM-controlled N-channel switch in H-bridge; gate driven by integrated motor driver IC.

Use Value: Avalanche rating withstands inductive kickback during abrupt brake events, eliminating need for external flyback diodes.

Use Scenario: Dimming FET in constant-current LED string driver for 65-inch LCD TV backlight (120 V bus, 1.2 A string).

IC Role / Device Role / Timing Role: High-voltage switching element in boost converter output stage; switched at 500 kHz.

Use Value: 100 V rating supports wide input range (90–130 V), while low C_oss (212 pF typ) reduces switching loss at high frequency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP036N10N5	R_DS(on) = 3.6 mΩ @ 10 V (vs. 17.4 mΩ @ 5 V); higher gate charge (Q_G = 72 nC); requires 10 V drive for optimal R_DS(on).	Better suited for fixed 10 V gate drive systems; less compatible with 3.3 V logic; higher cost per watt saved.	Select only when system uses 10 V gate drivers and demands sub-5 mΩ R_DS(on) at elevated temperature.
Vishay SIHF10N100D	TO-247 package; R_DS(on) = 100 mΩ @ 10 V; no logic-level rating (V_GS(th) = 2–4 V); higher R_th(j-c) = 1.5 K/W.	Designed for high-voltage industrial inverters; not suitable for space-constrained USB-PD or battery tools.	Consider only for legacy through-hole designs where thermal mass outweighs footprint constraints and 5 V drive is unavailable.

Compared with IPP036N10N5 and SIHF10N100D, PSMN021-100YL uniquely balances logic-level compatibility, LFPAK56 thermal performance, and cost-effective 100 V capability - making it optimal for modern compact, high-efficiency DC-DC and motor control modules.

Availability

PSMN021-100YL is available at Aetrix Electronics and suitable for synchronous rectification, USB-PD fast charging, and battery-powered motor control requiring stable component supply and long-term production continuity.

Supply support for PSMN021-100YL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, serving automotive, industrial, and consumer markets with ISO/TS 16949-certified manufacturing.

This device belongs to Nexperia's TrenchMOS logic-level power MOSFET product line, engineered specifically for high-efficiency, space-constrained power conversion in adapters, chargers, and motor drives.

FAQ

Is PSMN021-100YL suitable for 3.3 V microcontroller gate drive?

Yes. With V_GS(th) ranging from 1.4 V to 2.1 V at 25 °C and guaranteed turn-on at 3.3 V, this MOSFET fully enhances and delivers its specified R_DS(on) of 17.4 mΩ at V_GS = 5 V. At 3.3 V, R_DS(on) increases to ~32 mΩ (per Fig. 7), still sufficient for many medium-current applications.

What is the maximum continuous drain current at 100 °C mounting base temperature?

Per Figure 2 in the datasheet, the continuous drain current is derated to 35 A at T_mb = 100 °C. This value assumes proper PCB copper area (≥ 100 cm²) and still maintains safe junction temperature below 175 °C under typical forced-air conditions.

Does the mounting base require electrical isolation from the PCB ground plane?

No - the mounting base is internally connected to the drain terminal. It must be routed to the drain net and may be left floating only if the drain node is isolated. For thermal performance, it should be soldered to a dedicated copper pour tied to the drain net, not to ground unless drain is grounded in the circuit.

Can PSMN021-100YL replace older SO8 MOSFETs like IRF7470 in existing layouts?

Yes - LFPAK56 (SOT669) has identical 1.27 mm lead pitch and compatible footprint to Power-SO8, enabling drop-in replacement. However, note that Pin 4 is gate (not drain), and the mounting base is drain-connected, so PCB land pattern must match SOT669 outline (Fig. 17), not generic SO8.

PSMN021-100YLX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-100, SOT-669

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 49A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 21.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 65.6 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4640 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 147W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMN021-100YLX FAQ

1.How can I place an order for PSMN021-100YLX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN021-100YLX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN021-100YLX reliable?

The price and inventory of PSMN021-100YLX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN021-100YLX is usually 5 days.

3.What payment methods are accepted for PSMN021-100YLX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN021-100YLX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN021-100YLX?

PSMN021-100YLX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN021-100YLX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN021-100YLX?

For technical support, including PSMN021-100YLX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN021-100YLX requirements.

6.How does Aetrix verify that PSMN021-100YLX is sourced from the original manufacturer or authorized distributors?

All PSMN021-100YLX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN021-100YLX meets industry standards.

7.What is the process for return or replacement of PSMN021-100YLX?

All PSMN021-100YLX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN021-100YLX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN021-100YLX part is unused and in its original packaging.

Return procedure for PSMN021-100YLX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…