Nexperia USA Inc. PSMN026-80YS,115

Overview

PSMN026-80YS from Nexperia is a standard-level N-channel MOSFET in LFPAK (SOT669) package, rated for 80 V V_DS, 27.5 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and qualified to 175 °C junction temperature. It delivers high efficiency in switching power converters and supports robust load switching in industrial and server power supplies.

For engineers reviewing the PSMN026-80YS datasheet, PSMN026-80YS pinout, PSMN026-80YS application, or PSMN026-80YS equivalent, key selection criteria include its 34 A continuous drain current at T_mb = 25 °C, 1.4 K/W typical thermal resistance (junction-to-mounting base), and avalanche ruggedness of 32 mJ - critical for reliability in unclamped inductive switching.

Technical Context

This MOSFET employs Nexperia's Advanced TrenchMOS technology to achieve low R_DS(on) and low gate charge (Q_G(tot) = 20 nC typ), enabling fast switching with reduced conduction and switching losses. Its LFPAK package integrates a thermally enhanced mounting base directly connected to the drain, optimizing heat transfer to the PCB.

The device features a gate-source threshold voltage (V_GS(th)) ranging from 2 V to 4 V at 25 °C, ensuring stable turn-on under standard logic-level drive, and exhibits low output capacitance (C_oss = 120 pF) and reverse transfer capacitance (C_rss = 70 pF) at V_DS = 40 V - supporting high-frequency operation in DC-DC converters.

Key Specifications

Pinout & Package

PSMN026-80YS uses the SOT669 (LFPAK) plastic surface-mount package - a 4-lead single-ended package with an exposed mounting base electrically connected to the drain terminal for superior thermal and electrical performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with PSMN026-80YS, PSMN020-80YS trades marginal R_DS(on) improvement for increased gate drive demand, while IRF7470PBF sacrifices thermal performance and package-level integration - making PSMN026-80YS the optimal balance of power density, ruggedness, and drive simplicity in new designs.

Availability

PSMN026-80YS is available at Aetrix Electronics and suitable for DC-DC converters, lithium-ion battery protection circuits, and server power supplies requiring stable component supply and long-term industrial lifecycle support.

Supply support for PSMN026-80YS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in MOSFETs, ESD protection, and automotive-qualified components.

This part belongs to Nexperia's standard-level TrenchMOS LFPAK portfolio, engineered for industrial and computing power management where thermal efficiency, avalanche robustness, and surface-mount manufacturability are critical.

FAQ

What is the maximum continuous drain current for PSMN026-80YS at 100 °C mounting base temperature?

The maximum continuous drain current is 24 A at T_mb = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating due to reduced heat dissipation capacity at elevated board temperatures, and must be verified against actual PCB copper area and airflow conditions.

Does PSMN026-80YS have an integrated body diode, and what are its key parameters?

Yes, it includes a source-drain body diode with forward voltage V_SD = 0.8–1.2 V at I_S = 5 A and T_j = 25 °C, reverse recovery time t_rr = 36 ns, and recovered charge Q_r = 52 nC. These values support moderate-frequency freewheeling in synchronous rectification but are not optimized for high-frequency ZVS operation.

Can PSMN026-80YS be driven directly by a 3.3 V microcontroller GPIO without a level shifter?

No - its V_GS(th) minimum is 1 V, but full enhancement requires ≥4.5 V for low R_DS(on). At 3.3 V, R_DS(on) rises above 100 mΩ, increasing conduction loss significantly. A gate driver or level-shifting circuit is required for reliable 27.5 mΩ performance.

What is the significance of the mounting base being electrically connected to the drain terminal?

The mounting base serves as the primary drain connection, enabling direct thermal coupling to the PCB copper pour while eliminating bond wire inductance. This reduces switching losses, improves avalanche energy handling, and simplifies layout - but requires careful isolation of the drain net from other circuit potentials on the board.