Nexperia USA Inc. PSMN027-100BS,118

Overview

PSMN027-100BS,118 from Nexperia is a standard-level N-channel MOSFET in D2PAK (SOT404) package, rated for 100 V drain-source voltage, 26.8 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C, and qualified for continuous operation up to 175 °C junction temperature. It delivers 37 A continuous drain current at T_mb = 25 °C and supports high-efficiency load switching in server power supplies.

For engineers reviewing the PSMN027-100BS,118 datasheet, PSMN027-100BS,118 pinout, PSMN027-100BS,118 application, or PSMN027-100BS,118 equivalent, key selection criteria include its 100 V rating, 26.8 mΩ on-resistance at 25 °C, D2PAK thermal performance (R_th(j-mb) = 0.8–1.46 K/W), gate-drive compatibility with standard 10 V logic, and avalanche ruggedness of 59 mJ.

Technical Context

This MOSFET employs planar silicon technology optimized for industrial-grade reliability and low conduction loss. Its threshold voltage range (2–4 V at 25 °C) ensures robust turn-on with standard gate drivers, while its 0.92 Ω internal gate resistance and 30 nC total gate charge support efficient switching in DC-DC converters operating below 500 kHz.

The device integrates a monolithic source-drain diode with 0.8–1.2 V forward drop at 15 A and 47 ns reverse recovery time, enabling synchronous rectification and freewheeling in motor control H-bridges without external diodes. Thermal design leverages the D2PAK mounting base directly connected to drain for low-junction-to-mounting-base resistance.

Key Specifications

Pinout & Package

D2PAK (SOT404) plastic single-ended surface-mounted package with 3 leads (lead 2 cropped); mounting base electrically connected to drain and thermally coupled to PCB copper pour or heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with STP110N10F7 and IRF3205PBF, PSMN027-100BS,118 uniquely combines D2PAK's low R_th(j-mb), 100 V rating, and 175 °C qualification - making it the sole option for compact, high-temperature server and industrial DC-DC designs where thermal interface and voltage margin are non-negotiable.

Availability

PSMN027-100BS,118 is available at Aetrix Electronics and suitable for server power supplies, industrial motor control, and high-reliability DC-DC converters requiring stable component supply across multi-year production cycles.

Supply support for PSMN027-100BS,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade MOSFETs.

This part belongs to Nexperia's standard-level MOSFET product line, engineered for cost-sensitive yet thermally demanding industrial and communications equipment where 100 V rating, D2PAK thermal performance, and 175 °C operation are essential.

FAQ

What is the maximum continuous drain current at 100 °C mounting base temperature?

The PSMN027-100BS,118 delivers 26 A continuous drain current at T_mb = 100 °C and V_GS = 10 V, as specified in Table 4 Limiting Values. This derating reflects thermal constraints of the D2PAK package under natural convection; forced airflow or heatsink mounting restores full 37 A capability at 25 °C mounting base.

Does the D2PAK mounting base require electrical isolation from the heatsink?

Yes - the mounting base is electrically connected to the drain terminal (per Table 2 Pinning Information). If the heatsink is grounded or at a different potential, an isolating thermal pad (e.g., Bergquist Sil-Pad 2000) with dielectric strength ≥1 kV must be used to prevent short circuits.

Can this MOSFET be driven directly by a 3.3 V microcontroller GPIO?

No - its V_GS(th) minimum is 1 V, but full enhancement requires ≥10 V for 26.8 mΩ R_DS(on). At 3.3 V, R_DS(on) exceeds 150 mΩ (per Figure 8), causing excessive heating. A gate driver IC (e.g., TC4427) or level-shifting buffer is mandatory for reliable operation.

What is the safe operating area (SOA) limitation at 100 V drain-source voltage?

At V_DS = 100 V, the SOA curve (Figure 3) limits continuous drain current to ≤1.5 A for DC operation. For pulsed conditions (tp ≤10 µs), peak current reaches 148 A - confirming suitability for short-duration avalanche events but not steady-state 100 V switching.