Nexperia USA Inc. PSMN027-100XS,127
- Part No.:
- PSMN027-100XS,127
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack, Isolated Tab
- Datasheet:
-
PSMN027-100XS,127.pdf
- Description:
- MOSFET N-CH 100V 23.4A TO220F
- Quantity:
- Payment:

- Shipping:

Inventory:5,850
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Product details
Overview
PSMN027-100XS from NXP Semiconductors is a standard-level N-channel MOSFET in TO-220F (SOT186A) package, rated for 100 V drain-source voltage, 23.4 A continuous drain current at Tmb = 25 °C, and 26.8 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C. It features isolated mounting base, 2500 VRMS isolation voltage, and is qualified to 175 °C junction temperature - deployed in industrial AC-DC power supplies and synchronous rectification stages.
For engineers reviewing the PSMN027-100XS datasheet, PSMN027-100XS pinout, PSMN027-100XS application, or PSMN027-100XS equivalent, key selection criteria include its isolated TO-220F thermal performance (Rth(j-mb) = 3.4 K/W), gate-drive compatibility with standard 10 V logic, and avalanche ruggedness (69 mJ unclamped).
Technical Context
This MOSFET employs planar TrenchMOS technology optimized for low conduction and switching losses in hard-switched topologies. Its gate threshold voltage (VGS(th)) ranges from 2–4 V at 25 °C and remains functional down to 1 V at 175 °C, enabling robust turn-on under high-temperature conditions.
The device integrates an intrinsic body diode with 0.82–1.2 V forward voltage at 10 A and 42 ns reverse recovery time, supporting synchronous rectification and motor control commutation. Isolation capacitance of 10 pF and 2500 VRMS isolation rating enable safe operation in grounded heatsink configurations without additional insulation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum blocking voltage in DC/AC line applications without derating up to 175 °C junction temperature. |
| RDS(on) | 26.8 mΩ @ VGS = 10 V, ID = 5 A, Tj = 25 °C - Enables <1.3 W conduction loss at 5 A, critical for high-efficiency SMPS output stages. |
| ID | 23.4 A @ Tmb = 25 °C - Sustained current capability with heatsink mounting; derates to 16.5 A at Tmb = 100 °C. |
| QG(tot) | 30 nC - Total gate charge enabling fast switching with moderate gate driver strength (e.g., 1 A peak). |
| EAS | 69 mJ - Non-repetitive avalanche energy supports robustness against inductive load transients in motor drives. |
| Ciss | 1624 pF @ VDS = 50 V - Input capacitance impacts gate drive loop stability and EMI in high-frequency converters. |
| Rth(j-mb) | 3.4 K/W - Thermal resistance from junction to isolated mounting base enables direct heatsink attachment without insulator pads. |
Pinout & Package
TO-220F (SOT186A) plastic single-ended package with isolated mounting base (pin 3), designed for heatsink mounting via one central screw hole. The package provides electrical isolation between the drain-connected mounting base and source/gate terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control terminal accepting standard 10 V logic-level drive; internal gate resistance 0.92 Ω limits ringing. |
| 2 | Drain (D) | Main power terminal connected to mounting base; electrically isolated from source and gate. |
| 3 | Source (S) | Reference node for gate drive and load return path; floating relative to heatsink. |
Key Features
| Feature | Design Value |
|---|---|
| Isolated mounting base | 2500 VRMS isolation voltage and 10 pF isolation capacitance eliminate need for thermal interface pads in grounded heatsink designs. |
| High-temperature operation | Rated for continuous operation up to 175 °C junction temperature, with RDS(on) increasing only 2.8× from 25 °C to 175 °C. |
| Low gate charge | 30 nC total gate charge and 9.5 nC gate-drain charge reduce switching losses and simplify gate driver design. |
| Avalanche-rated | 69 mJ unclamped avalanche energy ensures reliability during inductive switching events without external snubbers. |
| Standard-level gate drive | Operates fully enhanced with 10 V gate drive, compatible with common PWM controllers and optocoupler-based drivers. |
Applications
| AC-to-DC Power Supply | Server Power Supply |
|---|---|
Use Scenario: Primary-side switching in 80 PLUS Titanium-certified 1 kW server PSUs operating at 100 kHz. IC Role / Device Role / Timing Role: High-side switch in LLC resonant half-bridge, handling 23.4 A peak currents with minimal conduction loss. Use Value: 26.8 mΩ RDS(on) reduces conduction loss by 32% vs. comparable 35 mΩ devices, improving full-load efficiency by 0.4%. |
Use Scenario: Secondary-side synchronous rectifier in 48 V input/12 V output VRM modules. IC Role / Device Role / Timing Role: Low-side synchronous rectifier controlled by dedicated SR controller, replacing Schottky diodes. Use Value: 0.82 V body diode forward voltage and 42 ns trr minimize reverse recovery loss, enabling >95% conversion efficiency at 50 A load. |
| Motor Control | Synchronous Rectification |
Use Scenario: Half-bridge leg in 3-phase BLDC inverter for HVAC compressors (200–500 W range). IC Role / Device Role / Timing Role: Low-side switch with gate driven by bootstrap IC; handles 16.5 A continuous current at 100 °C board temperature. Use Value: 3.4 K/W Rth(j-mb) allows direct heatsink mounting, reducing thermal interface resistance by 0.8 K/W versus insulated packages. |
Use Scenario: Output rectification in telecom DC-DC brick (48 V input, 5 V/30 A output). IC Role / Device Role / Timing Role: N-channel MOSFET configured as active rectifier, synchronized to primary-side switching waveform. Use Value: 23.4 A continuous current rating and 93.6 A pulsed capability support transient overload without thermal runaway. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP11NK100ZFP | 100 V, 11 A, 0.45 Ω RDS(on), TO-220FP package with non-isolated drain tab. | Lacks isolation; requires insulating pad for heatsink mounting; lower current rating limits use in >15 A designs. | Select only when isolation is unnecessary and cost is prioritized over thermal performance. |
| IRF840PBF | 500 V, 8 A, 0.85 Ω RDS(on), TO-220 package with non-isolated drain. | Higher voltage rating but significantly higher on-resistance and lower current; unsuitable for high-efficiency 100 V systems. | Use only in legacy 500 V flyback designs where isolation is handled externally and efficiency is secondary. |
Compared with STP11NK100ZFP and IRF840PBF, PSMN027-100XS delivers 3.5× lower RDS(on) and integrated isolation - enabling simpler thermal design and higher power density in 100 V industrial power stages.
Availability
PSMN027-100XS is available at Aetrix Electronics and suitable for AC-to-DC power supply equipment, motor control inverters, and server power supplies requiring stable component supply across multi-year production cycles.
Supply support for PSMN027-100XS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in high-performance analog, logic, and power MOSFET solutions for industrial and communications infrastructure.
This device belongs to NXP's TrenchMOS family, engineered specifically for high-efficiency, high-reliability power conversion in industrial-grade equipment operating up to 175 °C ambient.
FAQ
Is PSMN027-100XS suitable for automotive applications?
No. This part is not AEC-Q101 qualified and lacks automotive-specific testing or qualification. Its datasheet explicitly states it is intended for industrial, communications, and domestic equipment - not automotive safety-critical systems. Use only in non-automotive environments per NXP's legal disclaimers.
What is the maximum allowable mounting base temperature?
The absolute maximum mounting base temperature is not directly specified, but the device supports continuous operation with Tj ≤ 175 °C. Given Rth(j-mb) = 3.4 K/W, sustained Tmb above 120 °C risks exceeding Tj limit under full load - design margin recommends limiting Tmb to ≤100 °C for reliable long-term operation.
Can PSMN027-100XS be used with 5 V gate drive?
No. Its gate threshold voltage (VGS(th)) is 2–4 V typical at 25 °C, but RDS(on) rises sharply below VGS = 10 V. At VGS = 5 V, RDS(on) exceeds 120 mΩ - causing excessive conduction loss. It is explicitly designed for standard-level (10 V) gate drive, not logic-level operation.
Does the isolated mounting base require thermal compound?
Yes. Although the mounting base is electrically isolated, thermal interface material (e.g., silicone grease or phase-change pad) is required between the TO-220F base and heatsink to minimize thermal resistance. The 3.4 K/W Rth(j-mb) rating assumes optimal thermal contact - omitting compound increases effective Rth by ≥1.5 K/W.
PSMN027-100XS,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- TO-220-3 Full Pack, Isolated Tab
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 23.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 26.8mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 30 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1624 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 41.1W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220F
PSMN027-100XS,127 FAQ
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6.How does Aetrix verify that PSMN027-100XS,127 is sourced from the original manufacturer or authorized distributors?
All PSMN027-100XS,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN027-100XS,127 meets industry standards.
7.What is the process for return or replacement of PSMN027-100XS,127?
All PSMN027-100XS,127 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN027-100XS,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PSMN027-100XS,127 part is unused and in its original packaging.
Return procedure for PSMN027-100XS,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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