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Nexperia USA Inc. PSMN028-100YS,115
- Part No.:
- PSMN028-100YS,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- SC-100, SOT-669
- Datasheet:
-
PSMN028-100YS,115.pdf
- Description:
- MOSFET N-CH 100V 42A LFPAK56
- Quantity:
- Payment:
- Shipping:
Inventory:11,165
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Product details
Overview
PSMN028-100YS from Nexperia is a standard-level N-channel MOSFET in LFPAK (SOT669) package, rated for 100 V VDS, 27.5 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C, and qualified to 175 °C junction temperature. It delivers 42 A continuous drain current at Tmb = 25 °C and supports high-efficiency switching in DC-DC converters and server power supplies.
For engineers reviewing the PSMN028-100YS datasheet, PSMN028-100YS pinout, PSMN028-100YS application, or PSMN028-100YS equivalent, this device is selected for its low gate charge (33 nC), robust avalanche energy rating (68 mJ), and thermal resistance of 0.81 K/W from junction to mounting base - critical for thermally constrained industrial and communications power designs.
Technical Context
This MOSFET employs Nexperia's Advanced TrenchMOS technology to achieve low RDS(on) and low QG, enabling fast switching with reduced conduction and switching losses. Its LFPAK package integrates a thermally enhanced mounting base directly connected to the drain, supporting high-power density layouts.
The device features a gate-source threshold voltage of 2–4 V at 25 °C, exhibits stable RDS(on) up to 175 °C (max 74.3 mΩ), and includes an integrated source-drain diode with 48.7 ns reverse recovery time and 95.7 nC recovered charge - suitable for synchronous rectification and bidirectional load control.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum blocking voltage for industrial 48 V bus and server 12 V/48 V intermediate bus applications. |
| RDS(on) | 27.5 mΩ @ VGS = 10 V, Tj = 25 °C - Enables <1.4 W conduction loss at 25 A, reducing heatsink requirements. |
| QG(tot) | 33 nC - Low total gate charge minimizes drive power and enables efficient operation with standard gate drivers. |
| ID | 42 A @ Tmb = 25 °C - Supports high-current load switching without forced air cooling in compact PCB footprints. |
| Rth(j-mb) | 0.81 K/W - Thermal resistance from junction to mounting base enables direct heatsinking for sustained 89 W power dissipation. |
| EAS | 68 mJ - Non-repetitive avalanche energy rating allows safe operation under inductive switching stress without external snubbers. |
| VSD | 0.8–1.2 V @ IS = 15 A - Forward voltage of integrated body diode supports bidirectional current flow in battery protection circuits. |
Pinout & Package
LFPAK (SOT669) is a plastic single-ended surface-mounted package with 4 leads and an exposed metal mounting base electrically connected to the drain. Its low-profile design (max height 1.3 mm) and optimized copper layout deliver superior thermal and mechanical performance versus standard SO-8.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source (S) | Three parallel source terminals reduce package inductance and improve current sharing in high-di/dt switching. |
| 4 | Gate (G) | Single gate input with 0.5–1.5 Ω internal AC gate resistance - simplifies gate driver impedance matching. |
| Mounting Base (mb) | Drain (D) | Exposed drain pad provides primary thermal path to PCB heatsink and enables >80% of total power dissipation via board conduction. |
Key Features
| Feature | Design Value |
|---|---|
| Advanced TrenchMOS process | Delivers 27.5 mΩ RDS(on) and 33 nC QG in LFPAK - enabling higher efficiency than planar MOSFETs at same voltage class. |
| LFPAK thermal architecture | 0.81 K/W Rth(j-mb) and 89 W Ptot at Tmb = 25 °C - allows >2× power density vs. SO-8 equivalents without derating. |
| 175 °C junction rating | Guaranteed operation up to 175 °C - supports reliability in sealed enclosures and high-ambient environments like telecom rectifiers. |
| Integrated source-drain diode | 48.7 ns trr and 95.7 nC Qr - enables use in synchronous buck topologies and lithium-ion battery charge/discharge paths. |
| Avalanche ruggedness | 68 mJ EAS - withstands unclamped inductive turn-off events in motor control and solenoid drivers without failure. |
Applications
| DC-to-DC Converters | Lithium-ion Battery Protection |
|---|---|
Use Scenario: Primary switch in 12 V–48 V input isolated or non-isolated buck/boost converters for telecom and industrial power supplies. IC Role / Device Role / Timing Role: High-side or low-side power switch handling up to 42 A continuous current with minimal conduction loss. Use Value: 27.5 mΩ RDS(on) and 33 nC QG reduce combined conduction and switching losses, improving full-load efficiency by ≥1.2% over comparable 100 V MOSFETs. |
Use Scenario: Charge/discharge path switch and overcurrent protection element in multi-cell Li-ion battery packs (e.g., 10–16S). IC Role / Device Role / Timing Role: Bidirectional load switch leveraging integrated source-drain diode and 100 V VDS margin for cell stack transients. Use Value: 48.7 ns reverse recovery time and 95.7 nC recovered charge minimize diode switching loss during discharge cycles, extending battery runtime. |
| Server Power Supplies | Motor Control |
Use Scenario: Point-of-load (POL) high-side switch in 48 V–12 V or 48 V–5 V intermediate bus converters for AI accelerators and CPU VRMs. IC Role / Device Role / Timing Role: Fast-switching power FET operating at 300–1000 kHz with low QGD/QG ratio for clean turn-off. Use Value: 10.3 nC QGD and 0.81 K/W thermal resistance enable stable operation at >90% duty cycle with <10 °C junction rise above board temperature. |
Use Scenario: Half-bridge low-side switch in 24–48 V brushed DC or BLDC motor drives for HVAC actuators and industrial automation. IC Role / Device Role / Timing Role: PWM-controlled power stage switch with avalanche capability to absorb back-EMF spikes during commutation. Use Value: 68 mJ EAS rating ensures reliable operation under 34 A inductive fault currents without snubber networks or derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PSMN1R0-100YS,115 | RDS(on) = 1.0 mΩ @ 10 V (lower), QG = 105 nC (higher), same LFPAK package and 175 °C rating. | Better conduction loss but slower switching; suited for lower-frequency, high-current applications like OR-ing. | Select when minimizing I²R loss dominates over switching loss - e.g., <200 kHz operation with >60 A average current. |
| IPB110N10N3 G | RDS(on) = 11.0 mΩ @ 10 V, TO-263 package, Rth(j-c) = 1.2 K/W, no mounting-base drain connection. | Higher thermal resistance and larger footprint; requires external heatsink for equivalent power handling. | Choose only if legacy TO-263 layout compatibility is mandatory and board-level thermal management is already established. |
Compared with PSMN028-100YS, PSMN1R0-100YS offers lower RDS(on) at the cost of higher gate drive demand, while IPB110N10N3 G trades package efficiency for standardized through-hole assembly - making the original LFPAK variant optimal for new high-density, thermally constrained designs.
Availability
PSMN028-100YS is available at Aetrix Electronics and suitable for DC-DC converters, lithium-ion battery protection circuits, and server power supplies requiring stable component supply across long production lifecycles.
Supply support for PSMN028-100YS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in MOSFETs, diodes, and ESD protection components.
This device belongs to Nexperia's standard-level TrenchMOS LFPAK portfolio, engineered for industrial and communications power systems where thermal efficiency, avalanche robustness, and package miniaturization are prioritized over ultra-low gate charge.
FAQ
What is the maximum continuous drain current for PSMN028-100YS at 100 °C mounting base temperature?
The maximum continuous drain current is 30 A at Tmb = 100 °C, as specified in Table 4 (Limiting Values). This reflects thermal derating from the 42 A rating at 25 °C due to reduced heat dissipation capacity at elevated board temperatures.
Does PSMN028-100YS have a gate resistor integrated inside the package?
Yes - the device specifies an internal AC gate resistance (RG) of 0.5–1.5 Ω at 1 MHz, measured between gate terminal and gate electrode inside the die. This value aids in damping gate oscillations and reduces need for external series gate resistors in many applications.
Can PSMN028-100YS be used in avalanche mode repeatedly?
No - its 68 mJ EAS rating applies only to non-repetitive, unclamped inductive switching events. The datasheet does not specify repetitive avalanche capability, and repeated operation in avalanche will degrade reliability and is not recommended for design-in.
Is the mounting base electrically isolated from other terminals?
No - the mounting base (mb) is internally connected to the drain terminal, as confirmed in Table 2 (Pinning information) and Figure 19 (Package outline). Designers must ensure the PCB copper area under the mounting base is routed to the drain net and insulated from source/gate planes.
PSMN028-100YS,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SC-100, SOT-669
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 27.5mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 33 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1634 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 89W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK56, Power-SO8
PSMN028-100YS,115 FAQ
1.How can I place an order for PSMN028-100YS,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PSMN028-100YS,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PSMN028-100YS,115 reliable?
The price and inventory of PSMN028-100YS,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN028-100YS,115 is usually 5 days.
3.What payment methods are accepted for PSMN028-100YS,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN028-100YS,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PSMN028-100YS,115?
PSMN028-100YS,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PSMN028-100YS,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PSMN028-100YS,115?
For technical support, including PSMN028-100YS,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN028-100YS,115 requirements.
6.How does Aetrix verify that PSMN028-100YS,115 is sourced from the original manufacturer or authorized distributors?
All PSMN028-100YS,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN028-100YS,115 meets industry standards.
7.What is the process for return or replacement of PSMN028-100YS,115?
All PSMN028-100YS,115 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN028-100YS,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PSMN028-100YS,115 part is unused and in its original packaging.
Return procedure for PSMN028-100YS,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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