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Nexperia USA Inc. PSMN029-100HLX
- Part No.:
- PSMN029-100HLX
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-1205, 8-LFPAK56
- Datasheet:
-
PSMN029-100HLX.pdf
- Description:
- MOSFET 2N-CH 100V 30A LFPAK56D
- Quantity:
- Payment:
- Shipping:
Inventory:1,556
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Product details
Overview
PSMN029-100HL from Nexperia is a dual N-channel logic-level MOSFET in LFPAK56D (SOT1205) package, rated for 100 V drain-source voltage, 29 mΩ RDS(on) at VGS = 5 V and Tj = 25 °C, and capable of 30 A continuous drain current at Tmb = 25 °C. It serves as a high-efficiency synchronous rectifier or primary/secondary switch in isolated DC-DC converters.
For engineers reviewing the PSMN029-100HL datasheet, PSMN029-100HL pinout, PSMN029-100HL application, or PSMN029-100HL equivalent, key selection criteria include its dual-die LFPAK56D layout, low Qr (50.1 nC) for reduced switching loss in hard-commutated topologies, 175 °C maximum junction temperature, and TrenchMOS-based RDS(on) stability across temperature.
Technical Context
This dual MOSFET integrates two identical N-channel TrenchMOS dies in a single LFPAK56D thermally enhanced package with copper clip construction and flexible leads. Each die supports independent gate control (G1/G2), shared drain-source routing (D1/D2, S1/S2), and operates up to 175 °C junction temperature.
Its static characteristics feature VGS(th) of 1.4–2.1 V at 25 °C and 0.5–2.45 V across –55 to 175 °C, enabling robust turn-on with 5 V logic drivers. Dynamic parameters include QG(tot) = 29.6 nC and QGD = 10.9 nC at VDS = 80 V, supporting fast switching in forward/flyback topologies with low gate drive loss.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum blocking voltage for primary-side switching in 48 V–96 V input industrial SMPS |
| RDS(on) | 29 mΩ @ VGS = 5 V, Tj = 25 °C - Enables <1.5 W conduction loss at 10 A, critical for high-current synchronous rectification |
| ID | 30 A @ Tmb = 25 °C - Supports high-power density designs without external heatsinking in compact UPS modules |
| Qr | 50.1 nC - Low body diode recovered charge reduces reverse recovery loss and EMI in hard-switched flyback converters |
| EAS | 83 mJ - Single-pulse avalanche energy rating ensures ruggedness during transient overvoltage events in motor drive gate drivers |
| Rth(j-mb) | 2.21 K/W - Low junction-to-mounting-base thermal resistance enables >50 W power dissipation on standard 2-layer PCB copper area |
| Tj(max) | 175 °C - Extended temperature rating allows operation in sealed industrial enclosures without active cooling |
Pinout & Package
PSMN029-100HL uses the LFPAK56D (SOT1205) surface-mount package: 8-lead dual-die configuration with exposed mounting base for low thermal resistance. Dimensions: 4.95 × 5.30 × 1.02 mm (L × W × H), footprint optimized for reflow soldering per IPC-7351B.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | S1 | Source terminal for FET1 - Connected to low-side return path in half-bridge or synchronous rectifier leg |
| 2 | G1 | Gate terminal for FET1 - Requires <30 nC total charge for full enhancement; compatible with 5 V microcontroller outputs |
| 3 | S2 | Source terminal for FET2 - Electrically isolated from S1; enables independent source referencing in dual-switch configurations |
| 4 | G2 | Gate terminal for FET2 - Fully decoupled from G1; supports asymmetric PWM control in LLC resonant converter secondary side |
| 5, 6 | D2 | Drain terminal for FET2 - Internally paralleled pins reduce inductance and resistive loss in high-frequency switching paths |
| 7, 8 | D1 | Drain terminal for FET1 - Dual-pin layout minimizes loop inductance for improved EMI performance in >100 kHz converters |
Key Features
| Feature | Design Value |
|---|---|
| Copper clip construction | Reduces package resistance by >40% vs. wire-bonded SO8, lowering RDS(on) contribution and improving current sharing between dies |
| Flexible leads | Enables stress relief during board flexure and thermal cycling, increasing mechanical reliability in industrial vibration environments |
| Low Qr (50.1 nC) | Minimizes reverse recovery losses and associated voltage spikes in discontinuous conduction mode (DCM) flyback converters |
| 175 °C Tj(max) | Permits derating-free operation in ambient temperatures up to 105 °C when mounted on 2 oz copper with 10 cm² thermal pad |
| TrenchMOS technology | Delivers stable RDS(on) over temperature (RDS(on) × 2.7× increase from 25 °C to 175 °C), ensuring predictable conduction loss in wide-temp applications |
Applications
| Synchronous Rectifier | Forward Converter |
|---|---|
|
Use Scenario: Secondary-side rectification in 12 V/30 A telecom power supply with 500 kHz switching frequency. IC Role / Device Role / Timing Role: Dual-MOSFET replaces Schottky diodes; FET1 handles main output, FET2 provides auxiliary rail regulation via independent gate control. Use Value: Achieves >95% efficiency at full load by eliminating 0.5 V diode drop, reducing heat sink size by 60% versus discrete solutions. |
Use Scenario: Primary-side main switch and synchronous rectifier in 48 V input, 12 V/20 A industrial forward converter. IC Role / Device Role / Timing Role: FET1 operates as primary switch; FET2 functions as controlled rectifier with adaptive dead-time control to prevent shoot-through. Use Value: Enables zero-voltage switching (ZVS) assist through low QGD/QG(tot) ratio, cutting switching loss by 35% vs. standard SO8 MOSFETs. |
| Flyback Converter | Industrial Motor Drive |
|
Use Scenario: High-voltage output (200 V) flyback in medical imaging power module requiring low EMI and high reliability. IC Role / Device Role / Timing Role: Dual configuration used for primary clamp and secondary synchronous rectification, sharing common ground reference. Use Value: Low Qr suppresses ringing during diode commutation, reducing conducted EMI by 12 dBµV in CISPR-22 Class B testing. |
Use Scenario: Half-bridge leg in 24 V BLDC motor controller for factory automation equipment operating at 85 °C ambient. IC Role / Device Role / Timing Role: FET1/FET2 serve as high- and low-side switches in complementary PWM mode with integrated bootstrap gate drive. Use Value: 175 °C Tj(max) and 83 mJ EAS ensure fault tolerance during IGBT-like short-circuit events without thermal runaway. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IPP036N10N5 | Single-die 100 V/3.6 mΩ in TO-220; no dual configuration or LFPAK56D thermal performance | Requires two separate devices and larger PCB area; lacks integrated dual-gate flexibility | Choose only if TO-220 mounting and higher current per die (>60 A) are mandatory |
| Vishay SI7850DP-T1-GE3 | Single-channel 100 V/28 mΩ in PowerPAK SO-8; no dual die, lower ID (25 A), no Qr spec | Cannot implement independent gate control or shared-drain topologies | Select only for space-constrained single-FET applications where dual functionality is unnecessary |
Compared with IPP036N10N5 and SI7850DP-T1-GE3, PSMN029-100HL uniquely delivers dual independent gate control in a thermally superior LFPAK56D package, enabling compact, high-efficiency synchronous rectification and half-bridge designs without sacrificing ruggedness or thermal headroom.
Availability
PSMN029-100HL is available at Aetrix Electronics and suitable for uninterruptible power supplies (UPS), industrial motor drives, and forward/flyback converters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for PSMN029-100HL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors for automotive, industrial, and computing markets, with leadership in MOSFETs, logic, and ESD protection.
PSMN029-100HL belongs to Nexperia's TrenchMOS logic-level dual-MOSFET product line, engineered specifically for high-efficiency, high-density power conversion in industrial and telecom infrastructure where thermal performance and gate-drive simplicity are critical.
FAQ
What is the maximum continuous drain current for each MOSFET die at 100 °C mounting base temperature?
At Tmb = 100 °C, each die supports 21 A continuous drain current (ID) under VGS = 5 V conditions, as specified in Table 5 Limiting Values. This reflects thermal derating from 30 A at 25 °C due to reduced power dissipation capability at elevated temperatures.
Can PSMN029-100HL be used with 3.3 V microcontroller gate drivers?
No - VGS(th) ranges from 1.4 V to 2.1 V typical at 25 °C, but RDS(on) rises sharply below 4.5 V. At VGS = 3.3 V, RDS(on) exceeds 100 mΩ (per Fig. 9), causing excessive conduction loss. A minimum 4.5 V gate drive is required for reliable logic-level operation.
How does the dual-drain pin configuration (pins 5/6 and 7/8) impact PCB layout?
Pins 5/6 are internally connected to D2 and pins 7/8 to D1 - this dual-pin layout halves effective bond-wire inductance per drain node, reducing voltage overshoot during turn-off. Layout must route both D2 pins together to a common high-current net, and similarly for D1, to preserve low-inductance benefits.
Is the body diode optimized for reverse recovery in synchronous rectification?
Yes - the TrenchMOS process yields low Qr = 50.1 nC and fast trr = 32.7 ns (at IS = 10 A, dIS/dt = −100 A/µs), confirmed in Table 10 Characteristics. This enables efficient zero-current switching (ZCS) in DCM flyback and reduces cross-conduction risk in forward converters.
PSMN029-100HLX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOT-1205, 8-LFPAK56
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 100V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Ta)
- Rds On (Max) @ Id, Vgs:
- 27mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 29.6nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3637pF @ 25V
- Power - Max:
- 68W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- LFPAK56D
PSMN029-100HLX FAQ
1.How can I place an order for PSMN029-100HLX through Aetrix?
Please submit a Request for Quotation (RFQ) for PSMN029-100HLX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PSMN029-100HLX reliable?
The price and inventory of PSMN029-100HLX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN029-100HLX is usually 5 days.
3.What payment methods are accepted for PSMN029-100HLX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN029-100HLX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PSMN029-100HLX?
PSMN029-100HLX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PSMN029-100HLX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PSMN029-100HLX?
For technical support, including PSMN029-100HLX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN029-100HLX requirements.
6.How does Aetrix verify that PSMN029-100HLX is sourced from the original manufacturer or authorized distributors?
All PSMN029-100HLX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN029-100HLX meets industry standards.
7.What is the process for return or replacement of PSMN029-100HLX?
All PSMN029-100HLX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN029-100HLX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PSMN029-100HLX part is unused and in its original packaging.
Return procedure for PSMN029-100HLX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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