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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN030-150B,118

Name: PSMN030-150B,118
Brand: Nexperia USA Inc.
SKU: PSMN030-150B,118
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN030-150B,118

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: PSMN030-150B,118.pdf

Description:: MOSFET N-CH 150V 55.5A D2PAK

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Product details

Overview

PSMN030-150B,118 from Nexperia is a standard-level N-channel TrenchMOS power MOSFET in D2PAK (SOT404) package, rated for 150 V V_DS, 55.5 A continuous drain current at T_mb = 25 °C, and 250 W total power dissipation. It delivers 24 mΩ typical R_DS(on) at V_GS = 10 V and ID = 25 A, T_j = 25 °C, enabling high-efficiency switching in DC-DC converters and industrial SMPS.

For engineers reviewing the PSMN030-150B,118 datasheet, PSMN030-150B,118 pinout, PSMN030-150B,118 application, or PSMN030-150B,118 equivalent, key selection criteria include thermal resistance (R_th(j-mb) = 0.6 K/W), fast switching (Q_GD = 38–50 nC), avalanche ruggedness (E_AS = 300 mJ), and gate charge profile for optimized gate driver design.

Technical Context

This MOSFET uses TrenchMOS technology to achieve low on-resistance and fast switching with minimal gate charge. Its silicon structure supports stable operation up to T_j = 175 °C and features an integrated source-drain diode with 109 ns reverse recovery time and 610 nC recovered charge.

The device operates as a unidirectional high-side or low-side switch in hard-switched topologies. Its 0.6 K/W junction-to-mounting-base thermal resistance enables direct heatsink mounting via the exposed drain pad (pin 2/mb), while its 150 V rating targets mid-voltage industrial and computing power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - Maximum blocking voltage for use in 48 V–100 V bus applications with safety margin
I_D (continuous)	55.5 A at T_mb = 25 °C - Supports high-current output stages without forced air cooling
R_DS(on)	24 mΩ typ @ V_GS = 10 V, I_D = 25 A, T_j = 25 °C - Enables <1.5 W conduction loss at 25 A
Q_GD	38–50 nC - Low gate-drain charge minimizes Miller-induced switching delay and improves EMI behavior
R_th(j-mb)	0.6 K/W - Direct thermal path to heatsink allows >200 W power handling with moderate heatsink
E_AS	300 mJ (unclamped) - Withstands single-pulse inductive energy events without failure in flyback or buck-boost designs
V_GS(th)	2–4 V @ T_j = 25 °C - Compatible with standard 5 V and 10 V gate drivers; ensures clean turn-on above logic thresholds

Pinout & Package

PSMN030-150B,118 is housed in a plastic D2PAK (SOT404) surface-mount package with an exposed mounting base connected to the drain. Pin 2 is internally tied to the mounting base and not electrically accessible as a lead; only pins 1 (Gate), 3 (Source), and the metal base (Drain) form the functional terminals.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal requiring ≤100 nA leakage at ±10 V; driven by standard MOSFET gate drivers
3 (S)	Source	Reference node for gate drive; internal source inductance is 7.5 nH - impacts high-dI/dt ringing
Mounting base (mb)	Drain	Primary heat transfer path and high-current drain connection; must be soldered to copper pour or heatsink

Key Features

Feature	Design Value
Low R_DS(on) with TrenchMOS	24 mΩ typ enables <1.5 W conduction loss at 25 A, reducing thermal load in compact power stages
Optimized gate charge profile	Q_GD/Q_G(tot) ratio of ~39% ensures predictable Miller plateau timing for robust gate driver sizing
High avalanche energy rating	300 mJ non-repetitive E_AS supports reliable operation in inductive switching without snubbers
Thermal performance	0.6 K/W R_th(j-mb) allows >200 W dissipation with 50 °C temperature rise to heatsink
Fast switching	71 ns rise time and 76 ns fall time at V_DS = 75 V enable >500 kHz operation in resonant and hard-switched converters

Applications

Server VRMs

Industrial DC-DC Modules

Use Scenario: High-current, high-efficiency point-of-load regulation in 1U server motherboards with 12 V input and 0.8–1.8 V output.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converter; switches at 500–800 kHz with tight dead-time control.

Use Value: 24 mΩ R_DS(on) reduces conduction loss by >30% vs. comparable 30 mΩ MOSFETs, improving full-load efficiency by 0.8–1.2%.

Use Scenario: Primary-side switch in isolated 48 V–12 V industrial DC-DC modules used in PLC and motor drive power supplies.

IC Role / Device Role / Timing Role: High-side switch in active-clamp forward or half-bridge topology operating at 200–300 kHz.

Use Value: 300 mJ avalanche energy rating eliminates need for external clamping circuits during transformer reset transients.

Telecom Rectifiers

Computing PSU Secondary Side

Use Scenario: Output rectification in 48 V telecom rectifier modules delivering up to 100 A at 54 V nominal output.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in phase-shifted full-bridge configuration; body diode conduction minimized by precise timing.

Use Value: 109 ns t_rr and 610 nC Q_r reduce reverse recovery losses by 40% compared to standard 150 V MOSFETs with >200 ns t_rr.

Use Scenario: Secondary-side synchronous rectifier in ATX and EPS12V-compliant desktop/server PSUs with +12 V rail outputs.

IC Role / Device Role / Timing Role: Fast-turning-on rectifier controlled by dedicated SR controller; handles peak currents up to 222 A pulsed.

Use Value: 55.5 A continuous rating and 222 A pulsed ID_M support transient load steps without derating in multi-rail systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 150 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N15F7	R_DS(on) = 11.5 mΩ (lower), but Q_GD = 62 nC (higher); TO-220FP package limits thermal performance (R_th(j-c) = 1.5 K/W)	Better conduction loss but slower switching and higher thermal resistance - suited for lower-frequency, space-constrained designs	Select when conduction loss dominates and switching frequency <200 kHz; avoid in high-density, high-frequency layouts
IRF1405ZPBF	R_DS(on) = 20 mΩ (slightly lower), but E_AS = 120 mJ (less than half); TO-220 package with R_th(j-c) = 1.2 K/W	Limited avalanche capability restricts use in inductive or poorly clamped topologies; requires additional protection circuitry	Choose only for well-clamped, low-energy applications like linear regulators or simple buck converters with soft-start

Compared with STP110N15F7 and IRF1405ZPBF, PSMN030-150B,118 offers superior thermal management (0.6 K/W vs. ≥1.2 K/W), balanced switching performance (Q_GD = 38–50 nC), and robust avalanche tolerance (300 mJ), making it optimal for high-reliability, high-frequency industrial and computing power stages.

Availability

PSMN030-150B,118 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC modules, and telecom rectifiers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for PSMN030-150B,118 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in MOSFETs, ESD protection, and analog portfolio.

The SiliconMAX series targets high-efficiency power conversion in computing, communications, and industrial equipment, emphasizing low R_DS(on), fast switching, and rugged thermal design for demanding board-level applications.

FAQ

What is the maximum continuous drain current at 100 °C mounting base temperature?

The PSMN030-150B,118 supports 39 A continuous drain current at T_mb = 100 °C, per Table 4 limiting values. This reflects thermal derating due to reduced heat transfer efficiency at elevated temperatures, and must be verified against actual PCB layout and heatsink performance.

Is the mounting base electrically isolated from the drain terminal?

No - the mounting base (mb) is internally connected to the drain (pin 2), as confirmed in Table 2 pinning information and Figure 16 package outline. It must be treated as a live high-voltage node and thermally coupled to the heatsink without electrical isolation unless external insulation is applied.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No - the device has a gate-source voltage rating of ±20 V and a threshold voltage of 2–4 V at 25 °C. Standard 0 V to 10 V gate drive is sufficient for full enhancement; negative bias is not required and provides no reliability benefit for this standard-level part.

Can PSMN030-150B,118 be used in automotive applications?

No - the datasheet explicitly states this product is designed and qualified only for computing, communications, consumer, and industrial applications. It is not AEC-Q101 qualified, lacks automotive-grade screening, and carries no warranty for automotive use per Section 9.3 disclaimers.

PSMN030-150B,118 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 55.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 30mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 98 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3680 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

PSMN030-150B,118 FAQ

1.How can I place an order for PSMN030-150B,118 through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN030-150B,118 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN030-150B,118 reliable?

The price and inventory of PSMN030-150B,118 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN030-150B,118 is usually 5 days.

3.What payment methods are accepted for PSMN030-150B,118?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN030-150B,118 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN030-150B,118?

PSMN030-150B,118 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN030-150B,118 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN030-150B,118?

For technical support, including PSMN030-150B,118 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN030-150B,118 requirements.

6.How does Aetrix verify that PSMN030-150B,118 is sourced from the original manufacturer or authorized distributors?

All PSMN030-150B,118 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN030-150B,118 meets industry standards.

7.What is the process for return or replacement of PSMN030-150B,118?

All PSMN030-150B,118 units undergo pre-shipment inspection (PSI). If there is an issue with PSMN030-150B,118, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN030-150B,118 part is unused and in its original packaging.

Return procedure for PSMN030-150B,118:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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